Laser diodes, various types
We handle various types of laser diodes. We have many available, so please take a look.
We offer various laser diodes at low prices and short delivery times!
- Company：サンプラス
- Price：Other
diode Product List and Ranking from 40 Manufacturers, Suppliers and Companies
Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.
diode Manufacturer, Suppliers and Company Rankings
Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.
- 鞍山雷盛電子 China//Electronic Components and Semiconductors
- 新光電子 Tokyo//Electronic Components and Semiconductors
- オプトロンサイエンス Tokyo//Optical Instruments
- 4 光響 Kyoto//Optical Instruments
- 5 旭テック 大阪本社/東京支店/名古屋営業所 Osaka//Electronic Components and Semiconductors
diode Product ranking
Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.
- Reverse current prevention diode DKA40AA220 旭テック 大阪本社/東京支店/名古屋営業所
- Boundary control data diode for IoT in factories and medical operations OWCD. MHIパワーエンジニアリング 高砂事業部
- Nantong Electronics (diode manufacturer) high-voltage diode Toki Commercial Co., Ltd.
- 4 High Voltage Resistance Backflow Prevention Diode DKA40BA300 旭テック 大阪本社/東京支店/名古屋営業所
- 5 List of Discrete Constant Current Diodes (CRD) lineup
diode Product List
256～270 item / All 638 items
Displayed results
Bourns SiC Schottky Barrier Diode * Low Loss High Efficiency
It is optimal for high-voltage power applications due to its high speed and high voltage resistance, allowing for reduced losses and miniaturization. It supports 650V to 1200V and 5A to 10A.
Advanced power components are ideal for applications such as converters that require high peak forward surge capability, low forward voltage drop, reduced thermal resistance, and minimized power loss. They achieve high efficiency. SiC Schottky barrier diodes can be used in high-voltage power applications due to their ability to reduce losses and miniaturize components while maintaining high speed and high voltage resistance. ◇ Features - Low power loss, high efficiency - Low reverse leakage current - High peak forward surge current capability (IFSM) - Reduced EMI - Maximum operating TJ up to 175 °C - UL 94V-0 compliant - RoHS compliant, lead-free, halogen-free Available in multiple packages. Suitable for high-frequency switching power supplies. - TO220-2 - TO247-3 - TO252 - DFN8x8
- Company：セイワ 東京本社、関西支社、名古屋営業所、中国無錫 グループ会社 エレクトロン（長野県松本市）
- Price：Less than 10,000 yen
Wavespectrum manufactured collimated laser diode
Wavelength range from 405nm to 1650nm! High-quality collimated semiconductor laser.
We would like to introduce the "Collimated Laser Diode" manufactured by Wavespectrum Laser, which we handle. We offer high-quality collimated semiconductor lasers with single-mode and multi-mode beams. The wavelength range is from 405nm to 1650nm, and the output ranges from 5mW to 5W. Photodiodes are optional. On the other hand, using aspheric lenses allows the collimated laser diodes to have less divergence and achieve high-quality beams. 【Features】 - Equipped with single-mode and multi-mode beams - Wavelength range from 405nm to 1650nm - Output from 5mW to 5W - Achieves high-quality beams with less divergence *For more details, please download the PDF or feel free to contact us.
- Company：光響
- Price：Other
Molded PIN diode for L5204F high-frequency power switch
Switching PIN diode in a surface mount small package (2.5x1.2x0.8mm) for transmission and reception antenna switching circuits of various communication devices!
The "L5204F" is a PIN diode designed for high-frequency power switching applications such as antenna switching for various wireless communication devices. It is also suitable for RFID reader and writer applications. 【Main Features】 ○ Power switching is possible in the VHF and UHF bands ○ Low insertion loss and high isolation ○ Low forward series resistance ○ Low capacitance between terminals 〇 Rfs(typ)=0.5Ω @IF=50mA, f=100MHz 〇 Ct(typ)=0.6pF @VR=40V, f=100MHz ○ Surface mount type plastic molded package ○ RoHS compliant ● For more details, please download the catalog or contact us.
- Company：ライテック
- Price：Other
L8104 Ceramic PIN Diode for High-Frequency Power Switch
Standard ceramic package
The "L8104" is a PIN diode in a ceramic package designed for high-frequency power switching for various wireless communication equipment's transmit and receive antenna switching. 【Features】 ○ Power switching is possible in the VHF and UHF bands ○ Low insertion loss and high isolation ○ Low forward series resistance 〇 Rfs(typ)=0.5Ω @IF=50mA, f=100MHz 〇 Ct(typ)=0.8pF @VR=40V, f=100MHz 〇 Hermetic ceramic MELF package ○ RoHS compliant 〇 Lead-free ● For more details, please download the catalog or contact us.
- Company：ライテック
- Price：Other
L5208F Molded PIN Diode for High-Frequency Power Switch
Low power consumption products in mold packages.
The "L5208F" is a PIN diode designed for high-frequency power switching applications such as antenna switching for various portable wireless communication devices. It is suitable for antenna switches in the VHF/UHF bands. 【Main Features】 ○ Ideal for antenna switches in portable radios for VHF/UHF bands ○ Low forward series resistance ○ Low capacitance between terminals ○ Rfs(typ)=0.45Ω @IF=10mA, f=100MHz ○ Ct(typ)=0.6pF @VR=20V, f=100MHz ○ RoHS compliant ○ Pb-free/Halogen-free ● For more details, please download the catalog or contact us.
- Company：ライテック
- Price：Other
L8104-240 high-frequency power switch ceramic PIN diode
High voltage ceramic package products
L8104-240 is a ceramic package PIN diode designed for high-frequency power switching applications such as antenna switching for various wireless communication devices. 【Main Features】 ○ Power switching is possible in the VHF and UHF bands ○ Low reverse current ○ Low insertion loss and high isolation ○ Low forward series resistance ○ Peak reverse voltage 240V 〇 Rfs(typ)=0.5Ω @IF=50mA, f=100MHz 〇 Ct(typ)=0.8pF @VR=40V, f=100MHz ● For more details, please download the catalog or contact us.
- Company：ライテック
- Price：Other
High-frequency ceramic PIN diode ideal for RF switches.
This is a silicon PIN diode designed for high-frequency power switching for the transmission and reception antenna switching of various communication devices.
The "L8107" is ideal for switching antennas in various communication devices. 【Main Features】 ○ Optimal for antenna switching in the HF-UHF band ○ Small capacitance at zero bias, with very low reverse bias dependence. ○ Low insertion loss and high isolation. ○ Low series resistance. ○ Rfs(typ)=1.2Ω @IF=50mA, f=100MHz ○ Ct(typ)=0.4pF @VR=40V, f=100MHz ○ Environmentally friendly new ceramic MELF package ○ RoHS compliant ● For more details, please download the catalog or contact us.
- Company：ライテック
- Price：Other
2CL72 Accelerating Device Diode for Electrostatic Coating
Peak repetitive reverse voltage: 10KV; average forward current: 5mA; maximum surge current: 0.5A; reverse recovery time: 100nS.
Place of Origin: Liaoning, China (Mainland) ；Brand Name: LeadSun ；Model Number: 2CL72 ；Type: Rectifier Diode； Package Type: Surface Mount； Max. Forward Voltage: 5V~500V ；Max. Reverse Voltage: 5KV~500KV； Max. Forward Current: 5mA~60A ；Max. Reverse Current: 1.0μA~200μA ；Customzied: 1KV to 500KV
- Company：鞍山雷盛電子
- Price：Other
2CL74 Accelerating Device Diode for Electrostatic Coating
Peak reverse voltage: 14KV; average forward current: 5mA; surge current: 0.5A;
Place of Origin: Liaoning, China (Mainland) ；Brand Name: LeadSun ；Model Number: 2CL74 ；Type: Rectifier Diode； Package Type: Surface Moun；t Max. Forward Voltage: 5V~500V ；Max. Reverse Voltage: 5KV~500KV ；Max. Forward Current: 5mA~60A ；Max. Reverse Current: 1.0μA~200μA ；Customzied: 1KV to 500KV
- Company：鞍山雷盛電子
- Price：Other
High Voltage Rectifier Diode CL04-12
Peak repetitive reverse voltage: 12KV; Average forward current: 450mA; Dimensions: 7.5*22mm or 4.5*15mm;
2KV High voltage current rectifier diode CL04-12 : Peak Reverse Repetitive Voltage: 12KV Average Current: 450mA Max Foward Voltage: 16V Max Forward Surge Current: 40A Leakage Current: 5.0uA Maximum Junction Temperature: 130 °C Storage Temperature: -40~+130 °C Dimension: diameter 7.5*22mm or 4.5*15mm Trr: 100nS
- Company：鞍山雷盛電子
- Price：Other
High voltage fast recovery rectifier diode 20KV/20mA
Peak reverse voltage: 20KV; Average forward current: 20mA; Surge current: 2A; Dimensions: φ3*12mm; Reverse recovery time: 100nS.
High voltage fast recovery rectifier diodes 20KV/20mA : Peak reverse repetitive voltage: 20KV Average current: 20mA Max foward voltage: 55V Max forward surge current: 2A Leakage current: 2.0uA Dimension: φ3*12mm Trr: 100nS
- Company：鞍山雷盛電子
- Price：Other
High voltage rectifier diode 2CLG10KV/25mA
Peak reverse voltage: 10KV; average forward current: 25mA; surge current: 0.5A; low leakage current: 2.0uA;
10KV high voltage rectifier diode 2CLG10KV25mA : RoHS Certification and high reliability low reverse current level fast recover time Peak reverse repetitive voltage: 10KV Max foward voltage: 23V Average forward current: 25mA Surge current: 0.5A Leakage current: 2.0uA
- Company：鞍山雷盛電子
- Price：Other
High Voltage High Frequency Rectifier Diode CL01-12D
Peak repetitive reverse voltage: 12KV; Average forward current: 350 mA; Surge current: 30A.
Place of Origin: Liaoning, China (Mainland) ；Brand Name: Leadsun ；Model Number: CL01-12D ；Type: Rectifier Diode；Package Type: Surface Mount；Max. Forward Voltage: 13V； Max. Reverse Voltage: 12KV； Max. Forward Current: 350mA； Max. Reverse Current: 2uA； small dimension: 5*9mm；Packaging Details:200 pcs in one bag, 25 bags in one carton
- Company：鞍山雷盛電子
- Price：Other
