Last Updated： Aggregation Period:Feb 04, 2026～Mar 03, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Feb 04, 2026～Mar 03, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Feb 04, 2026～Mar 03, 2026
This ranking is based on the number of page views on our site.
151～180 item / All 641 items
Maximum forward voltage: 30V Maximum reverse voltage: 10KV Maximum forward current: 20mA Maximum reverse current: 5μA
Hot Selling QLG10KV/20mA power diode full bridge rectifier : Feature: Avalanche characteristic More sizes available vacuum molded, non-corrosive epoxy resin case Application: Electrostatic cleaning High Voltage testing equipment General purpose high voltage rectiｆier
Peak repetitive reverse voltage: 6/1.7KV Surge current: 13A Storage temperature: -40~+130 ℃ Junction temperature: 130℃
Absolute Maximum Ratings No. Item Symbol Rating D1 D2 Unit 1 Peak Repetitive Reverse Voltage Vrrm 6 1.7 KV 2 Maximum Junction Temperature Tjmax 130 °C 3 Storage Temperature Tstg -40~+130 °C Electrical Characteristics No. Item Symbol Rating D1 D2 Unit Conditions 1 Room Temperature Reverse Current Ir1 10 max 10 max uA Vr=Vrrm 2 High Temperature Reverse Current Ir2 20 max 20 max uA Vr=Vrrm, Tamb=100 °C 3 Reverse Breakdown Voltage VBR 7 min 2.1~2.8 KV Ir=100uA
Peak repetitive reverse voltage: 15KV; Average forward current: 300mA; Surge current: 30A; Storage temperature: -40 to +120 ℃; Junction temperature: 120℃
Absolute Maximum Ratings No. Item Symbol Rating Unit 1 Peak Repetitive Reverse Voltage Vrrm 15 KV 2 Maximum Junction Temperature Tjmax 120 ℃ 3 Storage Temperature Tstg -40~+120 ℃ 4 Average Forward Current Io 300 mA 5 Surge Forward Current Ifsm 30 A Electrical Characteristics No. Item Symbol Rating Unit Conditions 1 Room Temperature Reverse Current Ir1 5.0 max uA Vr=Vrrm 2 High Temperature Reverse Current Ir2 50 max uA Vr=Vrrm, Tamb=100 ℃ 3 Forward Peak Voltage Vf 24.0 V If=350mA 4 Reverse Recovery Time Trr 100 nS If=50mA, Ir=100mA
Peak reverse voltage: 15KV; Average forward current: 300mA; Surge current: 30A; Storage temperature: -40~+125 ℃; Junction temperature: 125℃
Absolute Maximum Ratings No. Item Symbol Rating Unit 1 Peak Repetitive Reverse Voltage Vrrm 15 KV 2 Maximum Junction Temperature Tjmax 125 °C 3 Storage Temperature Tstg -40~+125 °C 4 Average Forward Current Io 300 mA 5 Surge Forward Current Ifsm 30 A Electrical Characteristics No. Item Symbol Rating Unit Conditions 1 Room Temperature Reverse Current Ir1 2.0 max uA Vr=Vrrm 2 High Temperature Reverse Current Ir2 50 max uA Vr=Vrrm, Tamb=100 °C 3 Forward Peak Voltage Vf 24.0 V If=350mA 4 Reverse Recovery Time Trr 100 nS If=50mA, Ir=100mA
Peak repetitive reverse voltage: 18KV; Average forward current: 200mA; Surge current: 20A; Storage temperature: -40~+120 ℃; Junction temperature: 120℃
Absolute Maximum Ratings No. Item Symbol Rating Unit 1 Peak Repetitive Reverse Voltage Vrrm 18 KV 2 Maximum Junction Temperature Tjmax 130 ℃ 3 Storage Temperature Tstg -40~+130 ℃ 4 Average Forward Current Io 200 mA 5 Surge Forward Current Ifsm 20 A Electrical Characteristics No. Item Symbol Rating Unit Conditions 1 Room Temperature Reverse Current Ir1 5.0max uA Vr=Vrrm 2 High Temperature Reverse Current Ir2 50max uA Vr=Vrrm, Tamb=100 ℃ 3 Reverse Breakdown Voltage VZ 21min KV Ir=100uA 4 Reverse Recovery Time Trr 0.10 uS If=10mA, Ir=20mA
High voltage diode board
2CLZ150KV/0.1A Reverse peak recovery voltage (Vrrm): 150KV; Forward average current (If): 0.5A; Maximum forward peak voltage (Vfm): 240V; Maximum reverse recovery time (Trr): 50HZ/100nS;
High Voltage Diode Board
Reverse recovery voltage (Vrrm): 100KV; Forward average current (If): 1.0A; Maximum forward peak voltage (Vfm): 180V; Maximum reverse recovery time (Trr): 50HZ/100nS;
Electrostatic decontamination PCB rectifier board 60KV 100KV 8A 15A
60KV 8A 75nS 240*45*50 60KV 8A 120nS 240*45*50 100KV 15A 25nS 240*45*50
Ion accelerator PCB rectifier board 80KV 3A 5A
80KV 3A 75nS/120nS 240*45*50mm 80KV 5A 75nS/120nS 240*45*50mm
20KV 500mA
Peak reverse repetitive voltage: 20KV Average current: 500mA Max foward voltage: 45V Max forward surge current: 15A Leakage current: 2.0uA Dimension: φ4.5＊15mm Trr: 100nS
Surface mount diode
Vrrm：10KV IF(AV): 10mA IFSM: 1.0A Trr: 80nS
Surface mount diode
VRRM: 12KV IF(AV): 10mA IFSM: 1.0A Trr: 80nS
Surface mount diode
VRRM: 15KV IF(AV): 10mA IFSM: 1.0A Trr: 80nS
Surface mount diode
VRRM：5KV IF(AV): 270mA IFSM: 10A Trr: 100nS
Surface mount diode
VRRM: 5KV IF(AV): 270mA IFSM: 10A Trr: 100nS
Surface mount diode
VRRM: 8KV IF(AV): 200mA IFSM: 10A Trr: 100nS
High voltage diode
VRRM: 8KV IF(AV): 30mA IFSM: 1A Tstg: -40~+150℃ VFM: 16V Trr: 80nS Size: φ3*8mm
High voltage diode
VRRM: 30KV IF(AV): 30mA IFSM: 1A Tstg: -40~+150℃ VFM：65V Size：φ3*12mm
High voltage diode
VRRM: 20KV IF(AV): 20mA IFSM: 0.5A Tstg: -40~+150℃ VFM：45V Trr: 80nS Size：φ3*12mm
High voltage diode
VRRM: 20KV IF(AV): 50mA IFSM: 5.0A Tstg: -40~+150℃ VFM：48V Trr：100nS Size：φ3*12mm
High voltage diode 30KV 200mA 75nS
Repetitive Peak Reverse Voltage: 30KV Average Forward Current max:200mA Max. Surge Current:15A Max. Forward Voltage Drop:75V Max. Reverse Recovery Time:75nS Max. Reverse Current :2.0uA Storage Temperature Range :-40~+150 Size: 7.5*22mm
Listing of laser products from around the world handled by Luxray Co., Ltd.
The "Luxray Co., Ltd. Laser Products Comprehensive Catalog" features a range of laser products from around the world that we handle. We offer a wide variety of components powered by high-output diode lasers, covering a broad wavelength range from 630 to 2300 nm, from mount bars to complete turnkey systems. Additionally, we introduce pulse laser products. [Featured Products] ○ Semiconductor Laser Diodes ○ Ultra-Short Pulse Lasers, etc. For more details, please contact us or download the catalog.
DO-15, DO-27, DO-41, and many other axial lead types are easy to replace with stable delivery times and prices.
Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. We have compatible products such as diodes and transistors that are no longer produced domestically. Please feel free to contact us. 【Diode lineup】 ■ Rectifier diodes ■ Switching diodes ■ Bridge diodes ■ Zener diodes ■ Schottky diodes ■ Fast recovery diodes ■ TVS diodes ■ PIN diodes ■ ESD protection diodes 【About JSCJ】 Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing subcontractor (OSAT) for the back-end processes (packaging and testing) and was spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), the third largest discrete semiconductor manufacturer in the world (2017). *We will search for alternative products, so please feel free to inquire.
Introducing AEC-Q101 compliant Schottky barrier diodes from the electric vehicle hub, China.
Our company, Aquas, handles various electronic components as a major domestic distributor for JSCJ. JSCJ is focusing on expanding its lineup of AEC-Q101 compliant products in addition to transistors, MOSFETs, and diodes used in general applications. Please feel free to contact us. Example Model number: AD-1SS388 (SOD-523) *AD- without prefix indicates consumer products (non-AEC-Q101 compliant). [About JSCJ] Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a semiconductor manufacturing subcontractor (OSAT) for back-end processes (packaging and testing) and was spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest in the world (2017) in discrete semiconductor manufacturing. *Please feel free to request the latest datasheets from the manufacturer.
Introducing AEC-Q101 compliant Zener diodes from the electric vehicle hub, China.
Our company, Aquas, handles various semiconductors as a major domestic distributor for JSCJ. We have many alternatives for discrete items such as transistors and MOSFETs. Please feel free to contact us. Product example: Model number: AD-BZX84B (SOT-23) About JSCJ: Jiangsu Changjing Technology Co., Ltd. (JSCJ) was established as a contract manufacturer (OSAT) for the back-end processes (packaging and testing) of semiconductors, spun off from Jiangsu Changjiang Electronics Technology Co., Ltd. (JCET), which is the third largest in the world (2017) for discrete semiconductor manufacturing. *We can request the latest datasheets from the manufacturer, so please feel free to make a request.
Physically restrict Ethernet communication to one direction! Simple and clear security.
The "Data Diode OWCD" is a one-way communication restriction device that is effective when it is acceptable to completely block external access to internal networks, such as in cases where email and web browsing are not conducted over the line, and when it is necessary to securely restrict communication in one direction. Unlike gateways, firewalls, and routers, there is no need for logical settings to restrict communication in one direction. We also offer models equipped with send/receive PCs, so please feel free to inquire. 【Examples】 ■ Remote monitoring of thermal power plants (proven results in overseas: South Korea, Southeast Asia, Europe) ■ Critical public infrastructure ■ Offices handling a large amount of personal information ■ Design and engineering firms dealing with intellectual property ■ Departments such as factories and construction companies *For more details, please download the PDF or feel free to contact us.
