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Photodiode Product List and Ranking from 14 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
This ranking is based on the number of page views on our site.

Photodiode Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
This ranking is based on the number of page views on our site.

  1. オプトロンサイエンス Tokyo//Optical Instruments
  2. 丸文 Tokyo//Trading company/Wholesale
  3. オー工ステンプ Kanagawa//Electronic Components and Semiconductors
  4. 4 null/null
  5. 4 コーデンシ Kyoto//Electronic Components and Semiconductors
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Photodiode Product ranking

Last Updated： Aggregation Period:Jul 23, 2025～Aug 19, 2025
This ranking is based on the number of page views on our site.

  1. High-speed InGaAs photodiode オプトロンサイエンス
  2. Photodiode X100-7 (for semiconductor radiation detector) 丸文
  3. Germanium Photodiode (Ge Photodiode) オプトロンサイエンス
  4. 1000-2600nm photodiode "1000-2600" 【光通信機器/サイエンス/衛星　輸入商社】アイウェーヴ 東京本社
  5. 4 4-segment InGaAs photodiode オプトロンサイエンス

Photodiode Product List

31～45 item / All 45 items

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Si photodiode (TO package) (Si PD)

Si photodiode (TO package) (Si PD)

◆Driven under reverse bias conditions ◆Large diameter, square shapes also available ◆Low dark current ◆Silicon PIN photodiode ◆Peak wavelength approximately 940nm

■Spectral detection range: 400nm to 1100nm LD-PD has implemented an inspection system compliant with MIL-I-45208, and adheres to Telcordia test requirements (TA-NWT-00093) and MIL-STD-883 test methods. 【Parameters: Typical values, Symbols, Test conditions】 ● Round shape φ0.2 to φ8.0mm Detector size (mm): φ0.2, φ0.5, φ1, φ2, φ4, φ5, φ8 Response wavelength range (nm): 400 – 1100・λ Responsivity (A/W): 0.40, 0.45, 0.5, 0.5, 0.5, 0.5, 0.55・Re・VR=15V, λ=900nm Response time (nS): 2, 5, 6, 8, 15, 15, 25tr・VR=15V, RL=50Ω Dark current (nA): 1, 2, 3, 5, 12, 40, 60・ID・VR=15V Reverse voltage (V): 100・VB・IR=10μA Capacitance (pF): 0.8, 1.2, 2.0, 6, 20, 30, 70・Cj・f=1MHz, VR=15V Operating voltage (V): 0 to 15・VR Socket: Coaxial/TO-46/TO-5/TO-8 Saturation optical power: 0.3w/cm2

  • Other optical parts
  • Other physicochemical equipment
  • Other measurement, recording and measuring instruments

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SPO2 (arterial blood oxygen saturation) to photodiode (PD)

SPO2 (arterial blood oxygen saturation) to photodiode (PD)

■Wide active area ■High sensitivity ■Strong durability ■Wide angle ■Chip on PCB

◆Medical Sensors◆Various Optical Sensors◆Four Selectable Patterns This is a photodiode for receiving light to measure SPO2 (arterial blood oxygen saturation). These photodiodes are incorporated into and used in smartphones, smartwatches, and medical devices. SJ SYSTEM is a specialized manufacturer of technology for measuring SPO2 (arterial blood oxygen saturation) with pulse oximeters, and it manufactures and sells LED modules, PD modules, and reflection modules for SPO2. These products are used in the healthcare field and are utilized in smartphones and smartwatches.

  • Other optical parts
  • Other physicochemical equipment

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InGaAs large active area photodiode

InGaAs large active area photodiode

◆Large active area ◆Ideal for confirming beam movement, etc. ◆Sensor applications

The FCI-InGaAs-QXXX series is an InGaAs photodiode with a large active area. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide products with excellent reliability and cost performance, utilizing efficient manufacturing know-how to meet the requirements of mass production.

  • Other optical parts
  • Other physicochemical equipment
  • Other measurement, recording and measuring instruments

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Si position sensor photodiode

Si position sensor photodiode

◆1D or 2D active area effect ◆Compatible with active area size and packaging ◆Position sensing

Segmented, the lateral effect PSD is available in one-dimensional or two-dimensional active areas. The size and packaging of the active area can be adapted to fit a wide range of applications. Since the lateral effect PSD is most suitable for measuring large lateral displacements, segmented detectors are typically used in beam null applications. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products based on efficient manufacturing know-how that meets the requirements of mass production.

  • Other optical parts
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InGaAs large-diameter photodiode

InGaAs large-diameter photodiode

◆Large diameter active area size ◆Wavelength range: 1100-1620nm ◆IR sensitivity detector

The FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm, and 3mm are part of OSI Optoelectronics' IR sensitive detectors that have excellent responsiveness from 1100nm to 1620nm (also with weak signal sensitivity). OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying photodetectors as an OEM for over 30 years. Based on years of experience, they provide reliable and cost-effective products based on efficient manufacturing know-how that meets the requirements for mass production.

  • Other optical parts
  • Other physicochemical equipment
  • Other measurement, recording and measuring instruments

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Si high-speed photodiode

Si high-speed photodiode

◆High-speed silicon photodiode ◆Peak in the 800nm wavelength range ◆Specifications for high bandwidth applications (from 100Mbps to 1.25GHz)

High-speed silicon photodiodes have a peak in the 800nm wavelength range and are designed for high bandwidth applications (from 100Mbps to 1.25GHz). There are two types of photodiodes: 100Mbps to 622Mbps and 1.25Gbps. 【100Mbps / 622Mbps Photodiode】 The large effective area high-speed silicon detector series from OSI Optoelectronics is designed for short-distance data communication. 【850nm, 1.25 Gbps Photodiode】 The large effective area high-speed silicon PIN photodiode series from OSI Optoelectronics is designed for short-distance data communication at 850nm.

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Si photodiode 'CP0174AL'

Si photodiode 'CP0174AL'

Halogen-free compatible! Si photodiode suitable for mounting in compact optical units.

The "CP0174AL" is a photodiode capable of measuring light intensity from visible light to near-infrared light (400nm to 1000nm), including lasers and LEDs. The size of the light receiving area is 0.7mm x 0.7mm, and it is halogen-free compliant. With the adoption of a compact COB-2PIN package (2.2mm x 1.22mm), it is suitable for integration into small optical units such as pico projectors. 【Features】 ■ Sensitivity: 0.26A/W @ 405nm, 0.44A/W @ 700nm ■ Light receiving area size: 0.7mm x 0.7mm ■ Compact, thin package: 2.2mm x 1.22mm x 1.0mm COB-2PIN ■ Compatible with solder reflow ■ Lead-free compliant, RoHS compliant *For more details, please refer to the PDF document or feel free to contact us.

  • Sensors

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UV-C sensor / photodiode for UV-C power monitor

UV-C sensor / photodiode for UV-C power monitor

Suitable for irradiation power monitoring of sterilization, disinfection, and germicidal treatment using UV-C light.

This is a silicon photodiode compatible with the measurement of light power in the UV-C range (200–280nm). By adopting a unique package, we have achieved low cost. 【Features】 ■ Capable of detecting UV-C light ■ Compact surface mount package 3.5x3.0mm ■ Lead-free ■ Compatible with solder reflow ■ Can be combined with optical filters to receive light other than UV-C *For more details, please feel free to contact us.

  • Transistor

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[Market Report] Global Market for Photodiodes

[Market Report] Global Market for Photodiodes

The global market for photodiodes is illuminating a bright future for sensing technology, with remarkable growth anticipated.

The global photodiode market achieved approximately 410.1 million USD in sales in 2022 and is attempting to redefine sensing technology. With a vision promising enhanced data collection and precise sensing, industry experts predict that this market will reach an estimated revenue of 840.5 million USD by 2031. This projected transformation highlights an astonishing compound annual growth rate (CAGR) of 8.3% during the forecast period from 2023 to 2031. Photodiodes, the unsung heroes of optical sensing, play a crucial role in converting light into electrical signals, enabling accurate measurements across a wide range of applications, from communication systems and industrial automation to medical devices and environmental monitoring. As the world moves towards smart solutions and data-driven insights, the role of photodiodes in capturing and interpreting optical signals will become increasingly vital. For application methods, please check the [PDF download] button or apply directly through the related links.

  • others

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Pin photodiode chip / chip-on-submount type

Pin photodiode chip / chip-on-submount type

Wavelength is 1300 to 1600 nm! Usable for measurement instruments, data communications, FTTH, and other applications.

This product is a photodiode that uses InGaAs material grown on an InP substrate by MOCVD (Metal Organic Vapor Deposition). It is a front-illuminated type that supports a wide operating wavelength range from 1300nm to 1600nm and can be easily mounted on a submount. Please feel free to contact us when you need assistance. 【Features】 ■ InGaAs material ■ Planar Zn diffusion structure ■ Light receiving area with a diameter of 70μm ■ Front-illuminated photodiode ■ High responsiveness (0.85 A/W over a wide range (1300nm to 1600nm)) *For more details, please download the PDF (English version) or feel free to contact us.

  • Laser Components

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Technical Data: Optical Detection Device

Technical Data: Optical Detection Device

Overview of light detection elements! Free technical materials available!

A photodiode (PD) is a light-receiving element that converts changes in light intensity into electrical signals (voltage, current) when light is irradiated onto the PN junction of a semiconductor. Photodiodes are classified into three types based on their characteristics and structure: PN-PD, PIN-PD, and APD. Understanding the differences in their characteristics allows for appropriate selection based on application. 【Overview of Contents】 - What is a photodiode? - Applications of photodiodes - Structure and principle of photodiodes - Equivalent circuit - Phototransistor We are offering a free explanatory document on the overview of light detection elements (photodiodes, phototransistors, and optical power supply elements)! Please download the PDF for more details. For more information about the photodiodes we handle, please feel free to contact us.

  • diode

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EDFA with TAP-PD <Wavelength: 1410-1610nm>

EDFA with TAP-PD <Wavelength: 1410-1610nm>

Ultra-flat and wideband spectral characteristics! Built-in tap and power monitor functions.

This product is a hybrid component that combines the ultra-flat spectral sensitivity of a thin-film tap with a high-sensitivity PIN photodiode for power monitoring. It utilizes a single temperature-stable device package for both functions. It can be used for signal or pump laser source power monitoring using PM fiber pigtails. 【Features】 ■ Ultra-flat and wideband spectral characteristics ■ Built-in tap and power monitor functions ■ Corning SMF-28 or polarization-maintaining fiber *For more details, please download the PDF (English version) or feel free to contact us.

  • diode

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