R&D cluster PVD equipment (ferromagnetic materials, alloys, dielectric film deposition)

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Confocal sputtering and vacuum deposition composite film device

last updated：Mar 09, 2026

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Multilayer film formation of sputtered films and evaporated films.

In the development of new materials for ferromagnetic and ferroelectric materials, controlling composition and crystal orientation is extremely important. This device provides a highly useful film deposition environment for exploring the physical properties of these functional materials by adopting a confocal sputtering method with up to four cathodes (sputter up/down). Additionally, it is equipped with an automatic load lock and transfer chamber, and is compatible with an electron beam evaporation source (6 kW with four crucibles), allowing for efficient co-sputtering and multi-material film deposition through PC-controlled automatic/semi-automatic operation. In particular, when depositing ferromagnetic materials, the low target utilization efficiency of ferromagnetic targets (Fe, Co, especially high-purity pure iron 3N5–4N) is known to hinder the efficiency of research and development. This device addresses this issue by employing a cathode with a very high magnetic field at the target surface, thereby improving the film deposition efficiency of ferromagnetic materials, including pure iron targets. As a result, it demonstrates high performance and flexibility as a thin film deposition device for R&D, from material exploration to prototype research.

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basic information

■ Load lock chamber ■ Stainless steel cylindrical process chamber (diameter approximately 600mm, height approximately 400mm) ■ Compatible with substrates up to 4 inches (substrate rotation mechanism [maximum 30rpm]) ■ Maximum heating temperature: 350° ■ Target diameter: up to 3 inches (ferromagnetic targets can be up to approximately 3-4mm thick, non-magnetic targets can be up to approximately 6-10mm thick) ■ T/S adjustment function: distance between target and substrate (adjustable from 50mm to 150mm) ■ Cathode tilt angle: adjustable from -45 degrees to +45 degrees ■ Each cathode is equipped with a gas injection ring considering gas flow ■ Equipped with an integrated shutter ■ Sputtering up and down film formation is possible ■ DC pulse power supply: maximum output 1000W ■ RF power supply: maximum output 750W (13.56 MHz) ■ Exhaust system: dry scroll primary pump (maximum 40m³/h), turbo molecular pump (maximum 1600 l/s)

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Applications/Examples of results

This device is equipped with a confocal sputtering system with a maximum of 4 targets, allowing for the formation of alloy thin films from a wide range of metals and high melting point materials, including ferromagnetic materials such as Fe, Co, and Ni, as well as Al, Cu, Au, Ag, Ti, W, and Cr. It enables the fabrication of multi-component films through co-sputtering. It also supports reactive sputtering for high-purity ferromagnetic films and multi-component dielectric oxides and nitrides (such as doped AlN and transparent conductive films), and is equipped with a high magnetic field cathode that allows the use of 3-4mm thick targets (with a proven record of 1.5mm pure iron). Additionally, it features high-temperature substrate heating, a substrate rotation mechanism, a 4-crucible evaporation source, DC/RF power supplies, an automatic load lock, a clean vacuum system, and PC control, enabling multifunctional thin film deposition from research and development to prototyping with a single unit.