TanKeBlue 4-inch 4H-N SiC wafer

basic information

<Main Specifications> ■Material: SiC (Silicon Carbide) ■Type: 4H-N-type (Conductive Type) ■Size: 4 inches Diameter: 99.5 mm to 100.0 mm Source ■Thickness: 350 μm ±15 μm (ZMP) / 350 μm ±25 μm (Dummy) ■Off Angle: Off axis 4.0° toward <11-20> ±0.5° ■Surface Finish: Double-sided CMP Surface Roughness: Si surface Ra≤0.2 nm, C surface Ra≤1 nm ■Resistivity: 0.015 to 0.024 Ω·cm (ZMP) / 0.015 to 0.028 Ω·cm (Dummy) ■Micro-pipe Density: ≤0.1 cm⁻² (ZMP) / ≤15 cm⁻² (Dummy) ■TTV / Bow / Warp (Representative Values): ZMP Grade: ≤5 μm / ≤15 μm / ≤30 μm Dummy Grade: ≤15 μm / ≤25 μm / ≤40 μm ■Packaging Form: Single Case <Stock Information> - Dummy Grade: Thickness 350μm, Double-sided CMP, Quantity 60 pieces - ZMP Grade: Thickness 350μm, Double-sided CMP, Quantity 10 pieces *Stock may vary, please inquire for the latest status.

Price range

Delivery Time

P2

※In stock, can be shipped by the next business day.

Applications/Examples of results

4-inch SiC wafers are often considered in scenarios such as research and development, fundamental evaluations at universities and research institutions, equipment evaluations, prototype considerations, and material confirmations in small lots. Instead of immediately using large diameters with the assumption of mass production, there are cases where 4-inch wafers are chosen as a manageable size to start with process condition verification and fundamental evaluations. On the Orblynk SiC wafer sales page, "equipment evaluation" and "research and development" are explicitly mentioned as applications in the quotation template. In research and evaluation applications, it can be said that 4-inch wafers are more likely to be considered depending on the required quantity and stage of evaluation.

Detailed information

• 

  Each item is packaged in a single case, so you can order from one piece.