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Analysis(tem) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Oct 15, 2025～Nov 11, 2025
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Analysis Product List

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Technical Information Magazine 201905-01 Crystal Orientation Analysis with High Spatial Resolution

Technical Information Magazine 201905-01 Crystal Orientation Analysis with High Spatial Resolution

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** Using the TEM-based crystal orientation analysis system "ASTAR," it is possible to achieve higher spatial resolution than that of SEM-based EBSD (with spatial resolution of various EBSD methods being around tens of nanometers, while the ACOM-TEM method using ASTAR achieves 2 to 5 nm). Additionally, it is characterized by the ability to identify a greater variety of crystal structures. By obtaining crystal orientation maps, crystal phase maps, and grain size distributions that are difficult to acquire through conventional TEM analysis, quantitative interpretation becomes possible. Furthermore, since measurements can be taken in the same field of view as TEM observations, it allows for complex analyses combined with (S)TEM-EDX/EELS and the use of in-situ TEM. **Table of Contents** 1. Introduction 2. ACOM-TEM Method Using ASTAR 3. Examples of Analysis Using ASTAR 4. Conclusion

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Analysis of electronic components and materials using TEM.

Analysis of electronic components and materials using TEM.

TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.

TEM can perform not only high-magnification observation but also elemental analysis using EDS and EELS, as well as analysis of crystal structure, surface orientation, lattice constants, and more through electron diffraction.

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  • Other semiconductors
  • Other contract services

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Technical Information Magazine 201904-02 Cellulose Nanofiber Structural Analysis

Technical Information Magazine 201904-02 Cellulose Nanofiber Structural Analysis

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** In the research and development of CNF, the use of electron microscopy for observation has become a necessary evaluation across almost all material fields and research phases. Particularly for observing CNF dispersed in polymers using TEM, it is essential to employ the technique of "electron staining," which has been crucial for preparing TEM samples of polymer materials. In this presentation, we will introduce examples of morphological observations of composite materials using CNF, as well as observation cases of the CNF itself, structural analysis examples such as crystallinity measured by 13C solid-state NMR, and examples of compositional sugar analysis using acid hydrolysis HPLC-fluorescence detection. **Table of Contents** 1. Introduction 2. Overview of Morphological Observation 3. Observation Cases of CNF and CNF/Polymer 4. Evaluation of CNF Crystallinity 5. Compositional Sugar Analysis of CNF (HPLC-Fluorescence Detection) 6. Conclusion

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Structural analysis of nanomaterials

Structural analysis of nanomaterials

We offer contract services for structural analysis and morphological observation at the nanoscale.

We offer contract services for structural analysis and morphological observation of nanomaterials such as nanotubes using TEM, SEM, and EDS in the nanoscale region.

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Destructive analysis (material analysis, fracture surface analysis, FIB, TEM, etc.)

Destructive analysis (material analysis, fracture surface analysis, FIB, TEM, etc.)

We will conduct failure analysis of electronic components and observe and analyze the failure locations through material analysis.

Experts in various components such as semiconductors, cables and connectors, printed circuit boards, display devices like LCDs, power units, batteries, AC adapters, and memory will conduct failure analysis. - Perform semiconductor package resin opening, and estimate causes through observations using optical microscopes, emission microscopes, and scanning electron microscopy (SEM) with mechanical polishing. - From the perspective of material analysis, estimate causes through processing and observation using focused ion beam processing observation equipment (FIB-SEM), and observation using transmission electron microscopy (TEM) for material condition, foreign matter identification, surface/break analysis, etc. *For more details, please refer to the PDF document or feel free to contact us.*

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Surface and thin film analysis of semiconductors

Surface and thin film analysis of semiconductors

Detailed investigation of surface chemical composition, bonding states, and impurity distribution!

We would like to introduce our "Surface and Thin Film Analysis of Semiconductors." We propose effective analyses for material evaluation and failure mode identification in the process development, process management, and failure analysis of semiconductor devices. We provide detailed information that is useful for research and development, manufacturing processes, and failure analysis by examining the chemical composition, bonding states, and impurity distribution of surfaces. Please feel free to contact us when you need our services. 【Top Surface】 ■Composition: XPS ■Bonding State: XPS ■Contamination: TOF-SIMS, ICP-MS ■Roughness: AFM, SEM *For more details, please download the PDF or feel free to contact us.

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Failure analysis of power devices

Failure analysis of power devices

We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for analysis - Backside polishing - We accommodate various sample forms. Si chip size: 200um to 15mm square ■ Defective area identification - Backside IR-OBIRCH analysis and backside emission analysis - IR-OBIRCH analysis: Supports up to 100mA/10V and 100uA/25V Emission analysis: Supports up to 2kV * We address a wide range of defect characteristics such as low-resistance shorts, micro leaks, and high voltage breakdown failures. ■ Pinpoint cross-sectional observation of leak areas - SEM/TEM - We select SEM or TEM observation based on the predicted defects and can conduct physical observation and elemental analysis of leak defect areas with precision.

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  • Transistor
  • Analytical Equipment and Devices

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【Case Analysis】Corneal Epithelium (Cross-section)

【Case Analysis】Corneal Epithelium (Cross-section)

Analyze at ×1,500! By observing at high magnification, you can also observe cell adhesion states and more!

We would like to introduce a case study of the analysis of "Corneal Epithelium (Cross-section)" conducted by our company. By observing cross-sections with TEM, it is possible to examine everything from corneal epithelial cells to the endothelium. High magnification observation allows for the examination of cell adhesion states and more. 【Analysis Overview】 ■ Analysis Target: Corneal Epithelium (Cross-section) ■ Cross-section observation using TEM ■ Capable of observing from corneal epithelial cells to the endothelium ■ High magnification observation allows for examination of cell adhesion states and more *For more details, please refer to the PDF document or feel free to contact us.

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Specification verification and failure analysis through reliability testing.

Specification verification and failure analysis through reliability testing.

Analysis can be performed on samples in various conditions thanks to our unique preprocessing technology!

Our company conducts consistent analysis from reliability testing to failure analysis. This allows us to confirm whether the samples meet the specifications, as well as to identify and observe the defective areas of failed samples. We propose and implement tests and analyses tailored to our customers' requests and objectives, assisting from cause investigation to problem resolution. Please feel free to contact us when you need our services. 【Analysis Flow】 ■ Specification confirmation of semiconductor devices through reliability testing ■ Identification of defective areas and observation of failure points using TEM ・ Identification of defective areas through EMS/OBIRCH analysis ・ Observation of failure points using TEM *For more details, please download the PDF or feel free to contact us.

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  • Other Testing Contract
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Technical Information Magazine 202001-02 Crystal Structure Analysis of Gallium Oxide

Technical Information Magazine 202001-02 Crystal Structure Analysis of Gallium Oxide

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** Gallium oxide (Ga2O3) is attracting attention as a next-generation power semiconductor material, and research has been actively conducted in recent years. Optimizing process technology is essential for improving the reliability and characteristics of semiconductor devices, making the evaluation methods crucial. This paper presents examples of crystal structure analysis necessary for assessing the quality of epitaxial films, as well as the analysis of impurities, defects, and carrier concentration in the ion implantation process, which significantly impacts device characteristics. **Table of Contents** 1. Introduction 2. Crystal structure analysis using cross-sectional TEM and planar STEM 3. Evaluation of the ion implantation process 4. Conclusion

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[Case Analysis] Wide-field Observation of Renal Glomeruli

[Case Analysis] Wide-field Observation of Renal Glomeruli

Analyzed with ×1,000 TEM! There is a spherical glomerulus in the center that filters urine from blood.

We would like to introduce a case study of the analysis of the "renal glomerulus" conducted by our company. The kidneys are organs that produce urine from blood. In the center of this diagram is a spherical glomerulus that filters urine from blood, and surrounding it are the renal tubules that reabsorb necessary components from the filtrate. [Analysis Overview] ■ Analysis Subject: Renal Glomerulus ■ The kidneys are organs that produce urine from blood ■ There is a spherical glomerulus in the center that filters urine from blood ■ There are renal tubules that reabsorb necessary components from the filtrate *For more details, please refer to the PDF document or feel free to contact us.

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[Case Study] Observation of Triadenovirus using Negative Staining Method

[Case Study] Observation of Triadenovirus using Negative Staining Method

Analyzed with TEM at ×100,000! It is said to be a major pathogenic virus of the common cold, a spherical particle with a diameter of about 80 nm!

We would like to introduce a case study of the analysis of "triadenovirus" conducted by our company. Adenovirus is said to be a major pathogenic virus for colds and is a spherical particle with a diameter of approximately 80 nm. Using negative staining methods, the surface spikes can be observed. 【Analysis Overview】 ■ Analysis Subject: Triadenovirus ■ Adenovirus is a major pathogenic virus for colds ■ Spherical particle with a diameter of approximately 80 nm ■ Surface spikes can be observed using negative staining methods *For more details, please refer to the PDF document or feel free to contact us.

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Backside light emission analysis of SiC devices

Backside light emission analysis of SiC devices

Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device with less energy loss compared to conventional Si semiconductors and is attracting attention. However, due to its different physical properties from Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, destruction of the SiO2 film and damage to the SiC crystal were noted. *For more details, please refer to the PDF document or feel free to contact us.

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  • Analysis Services
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IC failure analysis

IC failure analysis

By combining various methods suitable for failure modes, we can consistently address everything from the identification of defective nodes to physical analysis.

We would like to introduce Aites Inc.'s "Defect Analysis of ICs." Our company provides a comprehensive approach to ICs by combining methods suitable for various defect modes, from identifying defective nodes to physical analysis. We offer various analysis techniques, including "Light Emission Analysis/OBIRCH Analysis," which allows layout verification using a Layout Viewer, as well as "Layer Delamination/Sample Processing," "PVC Analysis," "Diffusion Layer Etching," and "sMIM Analysis." 【Methods】 ■ Light Emission Analysis/OBIRCH Analysis ■ Layer Delamination/Sample Processing ■ Microprobe ■ PVC Analysis ■ EBAC Analysis ■ Physical Analysis (FIB-SEM, TEM) *For more details, please refer to the PDF document or feel free to contact us.

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  • Other analyses
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  • Analysis Services

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[Analysis Case] Analysis of Organic EL (OLED) Emission Layer

[Analysis Case] Analysis of Organic EL (OLED) Emission Layer

Quantitative evaluation of the guest in the light-emitting layer and film thickness is possible.

Organic EL displays are advancing towards practical use by leveraging advantages such as high brightness, high-resolution color, and thinness due to their self-emission principle. In the emission layer, guest molecules are doped into host molecules to enhance the emission efficiency. In this study, we identified the emission layer materials for red pixels in organic EL display elements. Additionally, we conducted thickness evaluation of the emission layer using a newly developed step gauge and quantified the guest materials within the emission layer. This allows for qualitative and quantitative analysis of guest molecules in the emission layer, as well as evaluation of the thickness of the emission layer. Measurement methods: TOF-SIMS, TEM, XPS Product field: Displays Analysis purpose: Composition evaluation, identification, thickness evaluation For more details, please download the materials or contact us.

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  • LCD display

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