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MOSFET(抵抗) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Aug 20, 2025～Sep 16, 2025
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MOSFET Product List

31～45 item / All 47 items

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MOSFET R9 Series

MOSFET R9 Series

High-reliability MOSFETs (Hermetic MOSFETs) for aerospace and defense equipment, and radiation-resistant MOSFETs for space equipment.

We offer a wide variety of discrete products in different package types for defense, aerospace, and space equipment, tailored to your applications and specifications. Features of the R9 Series - Released the R9 series utilizing Super Junction Technology - Significant improvement in performance metric FoM (on-resistance RDSON × charge Qg) - Enhanced resistance to Single Event Effects (SEE) - Packages include surface mount (SMD-0.2, SMD-0.5, SMD-2) and through-hole (TO-254, TO-257), as well as support for SupIR SMD-2 *Comparison [Conventional Products] [R9 Series] - RDS(ON) = 30 (mΩ) - RDS(ON) = 18 (mΩ) - Qg = 45 (nC) - Qg = 45 (nC) - ID = 22 (A) - ID = 40 (A) *For more details, please refer to the catalog or feel free to contact us.

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ICE8S65FP 8A,650V POWER MOSFET

ICE8S65FP 8A,650V POWER MOSFET

Mass production release starting January 2023! GEN2 Super Junction MOSFET

The ICE8S65FP from Ice Moss Technology is an 8A, 650V TO220 Full Pak package. It has low Qg and contributes to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt resistance ■ High UIS characteristics ■ High peak current resistance ■ Enhanced mutual conductance performance

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SiC MOSFET『FMG50AQ120N6』

SiC MOSFET『FMG50AQ120N6』

Achieves low RDS(on) to maximize the effective use of package space.

The "FMG50AQ120N6" is a SiC MOSFET in a TO-247-4L package (insulated). It achieves reduced wiring resistance and strong bonding through double-sided solder bonding. It has a built-in freewheeling diode (FWD) function, providing high noise resistance. It is suitable for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us if you have any inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

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Sansa Electric Manufacturing Co., Ltd. SiC POWER MOSFET

Sansa Electric Manufacturing Co., Ltd. SiC POWER MOSFET

FMG50AQ170N6

The "SiC MOSFET (TO-247-4L)" manufactured by SanSha Electric Co., Ltd. is an industrial power semiconductor that incorporates a built-in freewheeling diode (FWD) function. It supports high current density. By reducing wiring resistance and achieving a strong bond through a unique terminal structure, it harnesses the performance of SiC chips that reach over four times the current density compared to conventional products. Additionally, it maximizes the effective use of package space, resulting in low RDS(on). 【Features】 ■ Suitable package that achieves an insulated structure and high heat dissipation ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

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700V Silicon Carbide MOSFET 'MSC015SMA070'

700V Silicon Carbide MOSFET 'MSC015SMA070'

Low capacitance and low gate charge! High-speed and reliable body diode.

We would like to introduce our 700V Silicon Carbide (SiC) MOSFET, the 'MSC015SMA070'. It features low capacitance and low gate charge, along with a low internal gate resistance (ESR) that enables high-speed switching. It operates stably at a junction temperature TJ(max) = 175℃ and is equipped with a highly reliable body diode and excellent avalanche resistance. Please feel free to contact us if you have any inquiries. 【Features】 ■ Low capacitance and low gate charge ■ High-speed switching due to low internal gate resistance (ESR) ■ Stable operation at high junction temperature, TJ(max) = 175℃ ■ High-speed and reliable body diode ■ Package: D3PAK, TO-247, TO-247-4L, die ■ RoHS compliant *You can download the English version of the catalog. *For more details, please feel free to contact us.

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Active clamp type MOSFET

Active clamp type MOSFET

Optimal for driving inductive loads. Freewheeling diodes can be reduced!

It has a built-in Zener diode for active clamp between the gate and drain, which protects the MOSFET from back electromotive force during motor and solenoid drive operations through active clamp operation. This eliminates the need for a freewheeling diode for regenerative back electromotive force. Additionally, it also has a built-in bias resistor, contributing to the reduction of peripheral components.

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Latest Power Solution Product Lineup【Cystek】

Latest Power Solution Product Lineup【Cystek】

Product introduction of power MOSFET products for power supply applications.

【BOOST MOS】 Application: Boost-type DC-DC converters, etc. Package: TO-252, TO-220FP Voltage Rating: 100V to 250V Features: Low R<sub>DS(ON)</sub>, high current capability, low Qg 【BUCK MOS】 Application: Buck-type DC-DC converters Package: TO-220FP Features: Ultra-low on-resistance (5.3mΩ and above) 【SR MOS (Synchronous Rectification MOSFET)】 Application: Efficiency improvement in rectification stages Features: High-speed switching, low Qg 【Power Saving MOS】 For ultra-low current applications (e.g., 0.033A class) Compact SOT-23 package 【Power Switch MOS】 Application: ON/OFF control for power lines Package: Various including DFN3x3, SOP-8 Features: Low on-resistance, high current control capability 【Signal Switch MOS】 For low current and low voltage switching applications Supports ultra-compact packages (such as SOT-23) 【GaN/SiC WBG Devices】 GaN HEMT and SiC SBD (Schottky Barrier Diode) High voltage products planned, such as 650V class

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