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MOSFET(低オン抵抗) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Jan 14, 2026～Feb 10, 2026
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MOSFET Product List

1～28 item / All 28 items

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ICE32S60FP 32A,600V POWER MOSFET

ICE32S60FP 32A,600V POWER MOSFET

GEN2 Series 32A, 600V achieves a low on-resistance of less than 0.1 ohm in a full package.

The ICE32S60FP from Ice Moss Technology is a TO220 Full Pak package rated for 32A and 600V. It has a low Qg, contributing to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt tolerance ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance

  • Transistor
  • MOSFET

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General-purpose N-channel MOSFET "XP23/XP26 Series"

General-purpose N-channel MOSFET "XP23/XP26 Series"

Built-in gate protection diode for electrostatic discharge protection! MOSFET compliant with EU RoHS directive.

The "XP23/XP26 Series" is a general-purpose N-channel MOSFET that achieves low on-resistance and high-speed switching characteristics. It can be used in various applications such as relay circuits and switching circuits. As an electrostatic countermeasure, it has a built-in gate protection diode. The package adopts a compact SOT-23 (TO-236) (2.9 X 2.4 X h1.15mm), contributing to the miniaturization of equipment. 【Features】 ■ Built-in gate protection diode ■ Low on-resistance ■ High-speed switching *For more details, please refer to the PDF document or feel free to contact us.

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Power Semiconductor 2000V N-Channel Power MOSFET

Power Semiconductor 2000V N-Channel Power MOSFET

High voltage power conversion system! Suitable for various power exchange systems.

The 2000V N-channel power MOSFET is a high-voltage power MOSFET for high-voltage power conversion systems. It eliminates the need for series connections of low-voltage devices, allowing for parallel operation due to its positive temperature coefficient of on-resistance, enabling the construction of cost-effective power systems. Other advantages include a reduction in the number of components that make up the gate drive circuit due to fewer devices used, leading to cost reduction, improved reliability through simpler designs, and saving PCB space, contributing to miniaturization. 【Features】 ○ High blocking voltage ○ Unique high-voltage package ○ Increased creepage distance between terminals ○ Positive temperature coefficient of on-resistance ○ Space-saving (reducing multiple series connections of devices) For more details, please contact us or download the catalog.

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ICE20N60　20A, 600V POWER MOSFET

ICE20N60　20A, 600V POWER MOSFET

★In stock! Same-day shipping available! This power MOSFET contributes to power management energy saving and has a proven track record with power supply manufacturers.

The ICE20N60 from IceMOS Technology is a TO220 package rated for 20A and 600V. 【Features】 ■ TO220 package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

  • Transistor
  • MOSFET

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ICE11N70FP 11A,700V POWER MOSFET

ICE11N70FP 11A,700V POWER MOSFET

★Please inquire about stock. This is a power MOSFET that contributes to power management and energy saving, with a proven track record in power supply manufacturers.

The ICE11N70FP from IceMOS Technology is a TO220 FullPak package rated for 11A and 700V. 【Features】 ■ TO220 FullPak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

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ICE10N60FP 10A,600V POWER MOSFET

ICE10N60FP 10A,600V POWER MOSFET

★Please inquire about stock! This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE10N60FP from IceMOS Technology is a TO220 Full Pak package rated for 10A and 600V. 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced transconductance performance

  • Transistor
  • MOSFET

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ICE15N73FP 15A,730V POWER MOSFET

ICE15N73FP 15A,730V POWER MOSFET

★Please inquire about stock. This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE15N73FP from IceMOS Technology is a TO220 FullPak package rated at 15A, 730V. 【Features】 ■ TO220 FullPak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

  • Transistor
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『CSD18541F5』

『CSD18541F5』

60-V N Channel FemtoFET MOSFET 'CSD18541F5'

The 54mΩ, 60V N-channel FemtoFET MOSFET technology 'CSD18541F5' is designed and optimized for many industrial load switch applications with space constraints, minimizing the footprint. By replacing standard small signal MOSFETs with this technology, the footprint size can be significantly reduced. 【Features】 ■ Low on-resistance ■ Extremely low Qg and Qgd ■ Ultra-small footprint: 1.53mm × 0.77mm ■ Low profile: height 0.35mm ■ RoHS compliant *For more details, please contact us.

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ICE22N60B 22A,600V POWER MOSFET

ICE22N60B 22A,600V POWER MOSFET

★Please inquire about stock. This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE22N60B from Ice Moss Technology is a 22A, 600V TO-263 (D2PAK) package. 【Features】 ■ TO263-2L (D2PAK) package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced mutual conductance performance

  • Transistor
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SiC MOSFET『FMG50AQ120N6』

SiC MOSFET『FMG50AQ120N6』

Achieves low RDS(on) to maximize the effective use of package space.

The "FMG50AQ120N6" is a SiC MOSFET in a TO-247-4L package (insulated). It achieves reduced wiring resistance and strong bonding through double-sided solder bonding. It has a built-in freewheeling diode (FWD) function, providing high noise resistance. It is suitable for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us if you have any inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

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ICE25S65FP 25A,650V POWER MOSFET

ICE25S65FP 25A,650V POWER MOSFET

GEN2 Series 25A, 650V TO220 FullPak Package

The ICE25S65FP from IceMOS Technology is a TO220 Full Pak package rated for 25A and 650V. It has low Qg, contributing to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance

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Sansa Electric Manufacturing Co., Ltd. SiC POWER MOSFET

Sansa Electric Manufacturing Co., Ltd. SiC POWER MOSFET

FMG50AQ170N6

The "SiC MOSFET (TO-247-4L)" manufactured by SanSha Electric Co., Ltd. is an industrial power semiconductor that incorporates a built-in freewheeling diode (FWD) function. It supports high current density. By reducing wiring resistance and achieving a strong bond through a unique terminal structure, it harnesses the performance of SiC chips that reach over four times the current density compared to conventional products. Additionally, it maximizes the effective use of package space, resulting in low RDS(on). 【Features】 ■ Suitable package that achieves an insulated structure and high heat dissipation ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

  • SiC MOSFET 画像2.png
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  • MOSFET

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ICE20N60FP 20A,600V Power MOSFET

ICE20N60FP 20A,600V Power MOSFET

★In stock! Same-day shipping available! This power MOSFET contributes to power management energy savings and has a proven track record with power supply manufacturers.

The ICE20N60FP from Ice Moss Technology is a full-pack device rated for 20A and 600V. 【Features】 ■ TO220 Fullpak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance * For more details, please refer to the PDF document or feel free to contact us. * An English version of the catalog is available for download.

  • Transistor
  • MOSFET

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Latest Power Solution Product Lineup【Cystek】

Latest Power Solution Product Lineup【Cystek】

Product introduction of power MOSFET products for power supply applications.

【BOOST MOS】 Application: Boost-type DC-DC converters, etc. Package: TO-252, TO-220FP Voltage Rating: 100V to 250V Features: Low R<sub>DS(ON)</sub>, high current capability, low Qg 【BUCK MOS】 Application: Buck-type DC-DC converters Package: TO-220FP Features: Ultra-low on-resistance (5.3mΩ and above) 【SR MOS (Synchronous Rectification MOSFET)】 Application: Efficiency improvement in rectification stages Features: High-speed switching, low Qg 【Power Saving MOS】 For ultra-low current applications (e.g., 0.033A class) Compact SOT-23 package 【Power Switch MOS】 Application: ON/OFF control for power lines Package: Various including DFN3x3, SOP-8 Features: Low on-resistance, high current control capability 【Signal Switch MOS】 For low current and low voltage switching applications Supports ultra-compact packages (such as SOT-23) 【GaN/SiC WBG Devices】 GaN HEMT and SiC SBD (Schottky Barrier Diode) High voltage products planned, such as 650V class

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Super Junction MOSFET

Super Junction MOSFET

Power MOSFET with a high voltage rating of over 600V! This device features low on-resistance and ultra-low gate charge using MEMS technology.

The "Super Junction MOSFET" is our power MOSFET that utilizes high-voltage super junction technology. By combining silicon MOSFETs with MEMS process technology, we deliver world-class best-in-class performance. We have developed unique manufacturing technology using MEMS technology, and by expanding to smaller dimensions, we provide high-performance and cost-effective MOSFETs. 【Features】 ■ High voltage resistance of over 600V ■ High dv/dt resistance ■ High avalanche characteristics ■ High peak current characteristics ■ Enhanced mutual conductance characteristics, etc. *For more details, please download the PDF or contact us.

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ICE15S60FP 15A,600V POWER MOSFET

ICE15S60FP 15A,600V POWER MOSFET

GEN2 Series 15A, 600V GEN2 Super Junction MOSFET

The ICE15S60FP from IceMOS Technology is a TO220 Full Pak package rated for 15A and 600V. It has a low Qg, contributing to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

  • Transistor
  • MOSFET

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High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

Ideal for industrial equipment at 1200V! Achieves high-speed switching and low on-resistance, significantly reducing power loss and contributing to equipment miniaturization!

Introducing Toshiba Device & Storage's 1200V SiC MOSFET for industrial equipment and high-capacity power applications. This product adopts Toshiba's second-generation chip design, which enhances the reliability of SiC MOSFETs. The gate threshold voltage is set high at 4.2V to 5.8V, reducing the risk of malfunction (false arcing). Additionally, it incorporates a low forward voltage SiC Schottky Barrier Diode (SBD), which also reduces power loss. 【Application Devices】 ■ High-output, high-efficiency large-capacity AC-DC converters for industrial equipment ■ Solar inverters ■ Large-capacity bidirectional DC-DC converters such as UPS *For more details, please download the PDF or contact us.

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ICE8S65FP 8A,650V POWER MOSFET

ICE8S65FP 8A,650V POWER MOSFET

Mass production release starting January 2023! GEN2 Super Junction MOSFET

The ICE8S65FP from Ice Moss Technology is an 8A, 650V TO220 Full Pak package. It has low Qg and contributes to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt resistance ■ High UIS characteristics ■ High peak current resistance ■ Enhanced mutual conductance performance

  • Transistor
  • MOSFET

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ICE20N60B 20A, 600V POWER MOSFET

ICE20N60B 20A, 600V POWER MOSFET

★Please inquire about stock! This is a power MOSFET that contributes to power management and energy saving, with a proven track record in power supply manufacturers.

The ICE20N60B from Ice Moss Technology is a TO263-2L, D2PAK package rated for 20A and 600V. 【Features】 ■ TO263-2L (D2PAK) package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced transconductance performance

  • Transistor
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