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diode Product List and Ranking from 26 Manufacturers, Suppliers and Companies

Last Updated: Aggregation Period:Jul 23, 2025~Aug 19, 2025
This ranking is based on the number of page views on our site.

diode Manufacturer, Suppliers and Company Rankings

Last Updated: Aggregation Period:Jul 23, 2025~Aug 19, 2025
This ranking is based on the number of page views on our site.

  1. MHIパワーエンジニアリング Hyogo//Industrial Machinery 高砂事業部
  2. null/null
  3. null/null
  4. 4 鞍山雷盛電子 China//Electronic Components and Semiconductors
  5. 5 オプトロンサイエンス Tokyo//Optical Instruments

diode Product ranking

Last Updated: Aggregation Period:Jul 23, 2025~Aug 19, 2025
This ranking is based on the number of page views on our site.

  1. Boundary control data diode for IoT in factories and medical operations OWCD. MHIパワーエンジニアリング 高砂事業部
  2. Reverse current prevention diode DKA40AA220
  3. High Voltage Resistance Backflow Prevention Diode DKA40BA300
  4. Production control, data diode for factory monitoring IoT OWCD3i MHIパワーエンジニアリング 高砂事業部
  5. 5 Nanoplus GmbH Fabry-Pérot Laser Diode

diode Product List

16~30 item / All 637 items

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1000-2600nm photodiode "1000-2600"

Optimal for gas sensing! A photodiode with a wavelength range of 1000-2660nm.

The 1000-2600nm photodiode "1000-2600" is a photodiode with a wavelength range of 1000-2660nm. The light receiving area is 1-3mm, and the package is TO-5. It is used for gas sensing. 【Features】 ■ Spectral response range: 1000-2600nm (typ) ■ Peak sensitivity wavelength: 1880nm (typ) ■ Responsivity: 0.9A/W (max) ■ Reverse voltage: 2V (max) ■ Dark current: 1.9mA *For more details, please download the catalog or contact us. *The catalog is available in English.

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BWT Beijing Co., Ltd. Laser Diode Comprehensive Catalog

We offer high-quality fiber-coupled laser diodes!

BWT Beijing is a joint venture between the United States and China. Utilizing American quality control and Chinese production capabilities, we manufacture fiber-coupled LDs in Beijing, China. Our LDs not only cover a wide wavelength range from 405 to 9XX nm but also come with full support for LD power supplies. Since March 2009, we have been expanding sales in the Japanese market through a distribution agreement with our company, Broadband Co., Ltd. BWT Beijing produces high-efficiency, high-stability, and excellent beam quality diode lasers using our unique fiber optic coupling technology. For laser excitation applications, we offer feedback isolation (>45dB) that blocks return light in the 1040-1100 nm range. By providing high quality at reasonable prices, we contribute to the revitalization of the market. For more details, please download the catalog or contact us. Please note that the catalog is in English.

  • Optical Measuring Instruments
  • Laser Components
  • Lighting for image processing

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InGaAs VIS/NIR photodiode

GPD Corporation is a global company that manufactures power and high-speed germanium transistors, diodes, and infrared photodetectors.

■Aperture: 0.3mm to 5mm ■Wavelength: 0.5 to 1.7μm ■Linear operation ■Low dark current, high sensitivity ■Fiber pigtail (single mode/multi mode) ■Package: TO-46, TO-18, TO-5, TO-8

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Two-color sandwich photodiode

Two-Color Sandwich PD

■On InGaAs: Si (1.7, 2.05, 2.2, 2.6μm) ■Effective diameter of the upper light receiving part: 2.0mm or 5.0mm ■Effective diameter of the lower light receiving part: 1mm, 2.0mm or 3.0mm ■On InGaAs (1.7, 2.05, 2.2, 2.6μm): InGaAs (1.7μm) ■Effective diameter of the lower light receiving part: 1mm or 2.0mm ■Standard package: TO-5, TO-8

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4-segment InGaAs photodiode

InGaAS Quadrant PD

■Wavelength range: 800nm to 1700nm ■Effective diameter: 0.5 / 1.0 / 1.5 / 2.0 / 3.0mm ■High sensitivity ■High shunt resistance ■Low dark current ■Low capacitance for high segment bandwidth ■Standard package: TO-5, TO-18

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InGaAs avalanche photodiode

InGaAs Avalanche PD

■ Aperture: 80μm to 350μm ■ Sensitivity wavelength range: 900nm to 1650nm ■ Linear operation ■ Low dark current for high sensitivity ■ Low capacitance for high speed ■ High reliability fiber pigtail (single mode/multi mode) ■ Package: Sub-mount with ball lens, TO-46

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Large-diameter InGaAs photodiode

Large Area InGaAs PD

■Aperture: 0.5mm to 5mm ■Cut-off wavelength: 1.7μm ■High-sensitivity shunt resistor ■Various lens options available: biconvex lens, plano-convex lens, ball lens ■Optical filters: density and bandpass filters ■Package: TO-46, TO-18, TO-5, TO-8

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GaAs PIN photodiode (PIN-PD)

GaAs PIN photodiode (TO-46 Can/ROSA compatible) optimal for VCSEL optical communication.

■Supports up to 25Gbps ■Available in SC/LC receptacle compatible ROSA or TO46-CAN package ■With ball lens or dome lens / with TIA

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Super Luminescent Diode (SLED)

QPhotonics supplies a wide range of optical semiconductor devices in the 200 to 1700 nm range.

■Wavelength: Superluminescent Diode (SLED) from 650 to 1660 nm ■Spatial output / Fiber output

  • Laser Components

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Si solderable chip photodiode

◆Sensitivity range: 400nm to 1100nm ◆Solderable chip photodiode ◆Solar cells, etc. ◆Photoconductive (solar cell) solderable chip

■Large effective diameter ■Abundant sizes ■High shunt resistance ■With leads or without leads Large active area photodetectors or detectors provide a low-cost approach for applications that require them to be considered "disposable." They can be used with soldered leads or as standalone bare dies. The sensitivity range is from 400nm to 1100nm.

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InGaAs high-speed photodiode

◆High-speed 70μm InGaAs photodetector◆Combining a sealed TIA and detector in a TO-46 package

The FCI-H155/622M-InGaAs-70 series is a high-speed 70μm InGaAs photodetector equipped with a wide-range transimpedance amplifier. By combining a sealed TIA and detector in a 4-pin TO-46 package, it provides ideal conditions for high-speed signal detection and amplification. 【Model Name: Active Area (Diameter)・Responsivity 1310nm・Responsivity 1550nm・Dark Current・Capacitance・Rise Time・Reverse Voltage】 ●FCI-InGaAs-70: 70 μm・0.9 A/W・0.95 A/W・0.03 nA, Vr=5.0V・1.5 pF, Vr=5.0V・0.2 ns, Vr=5.0V・20 V, max ●FCI-InGaAs-120: 120 μm・0.9 A/W・0.95 A/W・0.05 nA, Vr=5.0V・2 pF, Vr=5.0V・0.3 ns, Vr=5.0V・20 V, max ●FCI-InGaAs-300: 300 μm・0.9 A/W・0.95 A/W・0.3 nA, Vr=5.0V・10 pF, Vr=5.0V・1.5 ns, Vr=5.0V・15 V, max

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Nd-YAG optimized photodiode

◆Nd:YAG sensitivity High voltage resistance ◆Large effective diameter ◆High-speed sensitivity ◆High precision ◆Low capacitance, low noise, and high-speed operation are possible

◆For position detection of YAG laser output light ◆Photodiode optimized for high sensitivity at 1060nm ◆Operates at a high reverse bias voltage (200 volts) OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products using efficient manufacturing know-how that meets the requirements for mass production.

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Ultraviolet + Visible Light Wavelength Photodiode

◆Package with quartz or ultraviolet-transmitting glass window ◆Increased performance at high speeds due to low dark current and low capacitance with reverse bias

◆Wavelength sensitivity ranges from 200nm to 1100nm Packaged with quartz or ultraviolet transmitting glass windows, these detectors have a wavelength sensitivity from 200nm to 1100nm. They can enhance performance at high speeds due to low dark current and low capacitance with reverse bias. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products using efficient manufacturing know-how that meets the requirements of mass production.

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