analysis(si) - メーカー・企業と製品の一覧

[Analysis Case] Analysis of H termination on Si surface

Qualitative and relative comparison of SiH and states on the Si surface due to differences in processing.

We compared the states of the Si surface after HF treatment and after ozone treatment. In the positive ion spectrum, the peak intensity of Si was different. The weaker Si intensity after HF treatment is due to Si being metallic, while the stronger Si intensity after UV-ozone cleaning and in the As Received state is due to Si being oxide-based. From the negative ion spectrum, fragment ions reflecting the surface state were detected: SiF, SiH, and Six series after HF treatment, and SiO2 series after UV-ozone cleaning and in the As Received state.

企業：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Damage Assessment of Single Crystal Si Surface

Quantitative analysis of c-Si and a-Si by state is possible using high-resolution measurement and waveform analysis.

In the semiconductor manufacturing process, ion irradiation is sometimes performed for the purpose of surface modification. It is known that irradiating the surface of single-crystal Si with ions of inert elements can cause structural damage and lead to the formation of an amorphous layer. Utilizing the fact that high-resolution XPS spectra detect c (single-crystal) Si and a (amorphous) Si with different peak shapes, we will introduce a case where this damage-derived a-Si was separated from c-Si and quantitatively evaluated.

企業：一般財団法人材料科学技術振興財団　MST
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Evaluation of metal contamination on the Si wafer surface

ICP-MS: Inductively Coupled Plasma Mass Spectrometry

The purpose of evaluating metal contamination on the surface of Si wafers using ICP-MS includes not only the contamination assessment of the Si wafers themselves but also the evaluation of contamination within semiconductor devices and the assessment of the working environment due to Si wafer exposure. Therefore, the analysis of the Si wafer surface is conducted for various purposes. ICP-MS analysis can sensitively obtain the amount of metal contamination on the surface of Si wafers, and it is also possible to specify the evaluation area according to the purpose.

企業：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Diffusion Evaluation of Ga and Al in Si Substrate using SSDP-SIMS

Measurement avoiding the influence of high concentration layers using SSDP-SIMS.

From the perspective of cost reduction, the use of high-resistance Si substrates for power devices made of GaN is expected. However, it is said that if Al and Ga diffuse to the surface of the Si substrate during high-temperature film formation, a low-resistance layer is formed, leading to leakage. Therefore, we will introduce a case where SIMS analysis was conducted to evaluate the presence or absence of Al and Ga diffusion into the Si substrate. To accurately assess trace diffusion, measurements were conducted from the Si substrate side towards the GaN layer.

企業：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Evaluation of Si Anode in Lithium-Ion Secondary Batteries

It is possible to evaluate the structure of the Si anode after charging through sample cooling.

Si is one of the candidates for high-capacity negative electrode active materials, but it is said to suffer from severe cycle degradation due to very large volume changes during charge and discharge. In this study, to confirm the state of the Si negative electrode after charging, we disassembled it under a controlled atmosphere environment and performed cooling FIB processing, followed by observing the cross-sectional shape using SEM. When observing the cross-section at room temperature, significant damage such as film contraction, roughness of the observation surface, and pore formation was observed. In contrast, by conducting the observation while cooling, we were able to suppress the alteration of the Si negative electrode and evaluate the original shape of the sample.

企業：一般財団法人材料科学技術振興財団　MST
価格：Other

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Contract measurement

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[Analysis Case] Evaluation of the Diffusion Layer in Crystalline Si Solar Cells

Quantitative evaluation of dopants and evaluation of carrier distribution.

This is an example of quantitatively evaluating the dopant concentration distribution directly beneath the electrode in back contact type crystalline silicon solar cells. Additionally, by evaluating the carrier distribution, it is possible to determine the polarity of p/n and visualize the depletion layer in the cross-sectional direction.

企業：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Low-Temperature PL Spectrum of Si After Ion Implantation Annealing Treatment

It is possible to confirm the recovery of crystallinity due to irradiation defects and annealing.

In the fabrication of Si-based semiconductor devices, various processes such as ion implantation and annealing are performed. It is considered important to confirm the degree of irradiation defects and the extent of crystallinity recovery before and after these processes in order to control the manufacturing process. Photoluminescence (PL) measurements at low temperatures are one effective means of investigating these aspects. An example of PL measurements of samples that underwent ion implantation on a Si substrate followed by annealing treatment is presented.

企業：一般財団法人材料科学技術振興財団　MST
価格：Other

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[Analysis Case] Evaluation of Carrier Distribution in Crystalline Si Solar Cells

Evaluation of carrier diffusion layer uniformity in samples with surface roughness.

This is an introduction to a case where the carrier diffusion layer distribution of the surface textured part and the back surface field (BSF) part of BSF-type crystalline silicon solar cells was evaluated using SCM. In the textured part, the pn junction is formed along the surface irregularities, while in the BSF part, it can be confirmed that the carrier distribution is interrupted and uneven.

企業：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Evaluation of Carrier Concentration Distribution in Si-IGBT Chips

SRA evaluation of field stop layers and lifetime killers.

SRA can analyze the depth profile of carrier concentration distribution over a wide range from shallow regions (a few hundred nm) to deep regions (a few hundred μm). It is also possible to evaluate the in-plane distribution of resistance values at the sample surface or at specified depths. As an example, we will introduce a case where the depth profile of carrier concentration distribution for a commercially available Si-IGBT chip was evaluated, including the entire chip, the field stop layer, and the lifetime killer, as well as the in-plane distribution of resistance values at the irradiation depth of the lifetime killer using SRA.

企業：一般財団法人材料科学技術振興財団　MST
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Analysis of trace metal elements in the environment

ICP-MS: Inductively Coupled Plasma Mass Spectrometry

Metal elements suspended in environments such as clean rooms and production lines can adhere to or contaminate products, potentially leading to a deterioration in product performance. With ICP-MS, exposure tests can be conducted on clean Si wafers, allowing for the measurement of the amount of metal elements adhered to the surface at ppt levels. Additionally, we also offer the loan of Si wafers that have been pre-cleaned.

企業：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Stress Evaluation by Raman Mapping

It is possible to confirm the stress distribution in the sample cross-section.

The peaks in the Raman spectrum of single crystal Si shift to higher wavenumbers when compressive stress is applied to the sample and shift to lower wavenumbers when tensile stress is applied. This allows us to gain insights into the stress in Si. An example is shown where the distribution of stress in the cross-section of an IGBT (Insulated Gate Bipolar Transistor) was confirmed using Raman mapping.

企業：一般財団法人材料科学技術振興財団　MST
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Wafer

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[Analysis Case] Evaluation of Contact Electrodes for SiC Power MOSFETs

Identification of the interface between contact electrodes and SiC layer, and evaluation of elemental distribution.

We will introduce an analysis case of commercially available SiC power MOSFET devices. In SiC materials, it is essential to control the materials in a system that includes not only Si but also C, which differs from the conventional manufacturing methods of Si semiconductors. In the process of forming ohmic junctions between the contact electrodes and the SiC layer, we evaluated the elemental distribution and crystal phases, including C, using EDX/EELS analysis with TEM and electron diffraction.

企業：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Evaluation of Si-based IGBT Chip Cross-section by Low-Temperature Micro Photoluminescence Analysis

It is possible to confirm the influence of the lifetime killer from the cross-sectional direction.

IGBT (Insulated Gate Bipolar Transistor) is used in various products as a power semiconductor module, ranging from home appliances to industrial equipment. Lifetime control is implemented for performance improvement in IGBTs, but this control is achieved by creating defects (lifetime killers) in the drift layer. By conducting low-temperature micro-PL analysis from the cross-section, it is possible to gain insights into lifetime killers.

企業：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Image Analysis of Micro Beer

It is possible to evaluate the distribution of micro-regions.

With the miniaturization of circuits, the design and development of micro vias for interlayer connections require an understanding of the quality of filling. TOF-SIMS is an effective method for evaluating the results, as it can simultaneously perform elemental analysis and analyze molecular information of organic and inorganic substances, as well as enable image analysis. This document presents a case study analyzing a sample with Cu filled in vias of approximately 0.5μm in diameter on a Si substrate. The analysis of positive ion results confirmed the distribution of Cu and Si. Measurement method: TOF-SIMS Product fields: LSI, memory, electronic components Analysis objectives: Composition distribution evaluation, failure analysis, defect analysis For more details, please download the document or contact us.

企業：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] SCM Analysis of SiC Planer Power MOS

You can visualize the diffusion layer structure of SiC devices.

In SCM, it is possible to identify the p/n polarity of semiconductors and visualize the shape of the diffusion layer. This method has been utilized for Si devices, but it can also be applied to SiC devices in areas where the carrier concentration is sufficiently high. This document presents the results of SCM analysis conducted on a cross-section of a SiC Planar Power MOS.

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analysis(si) - メーカー・企業と製品の一覧

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