Wafer Annealing Furnace [MiniLab-WCF] Max 2000℃_Specialized for Ultra-High Temperature Wafer Annealing (4 inch to 8 inch)

High-Temperature Annealing Equipment for Max 2000℃ Φ6 to 8 inch Wafers, Capable of Small-Scale Production with Multi-Atmosphere Wafer Annealing System
◾️ Max 2000℃
◾️ Effective Heating Range: Φ6 to Φ8 inch single wafer type or batch type (multi-layer 5 wafer cassette)
◾️ Heater Control: 1 zone or 2 zones (cascade control)
◾️ Heater Material:
・C/C Composite: Φ6 to Φ8 inch
・PG Coating High Purity Graphite: Φ6 to Φ8 inch
◾️ Operating Atmosphere:
・Vacuum (1x10-2Pa), Inert Gas (Ar, N2)
◾️ PLC Semi-Automatic Operation
・Automatic sequence control for vacuum/purge cycle and venting
・Full automatic operation (optional)
・Touch panel operation allows centralized management without dispersed control.
◾️ Process Pressure Control
・APC Control (MFC flow or automatic opening adjustment valve PID loop control)
・Maximum 3 systems of MFC flow automatic control or manual adjustment with flow meter/needle valve
◾️ PLOT screen graph display, CSV data output


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A multi-atmosphere wafer annealing device capable of small-scale production, compatible with various process environments.
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