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  5. Etching Equipment
  6. Soft Etching Device [nanoETCH]

Soft Etching Device [nanoETCH]

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nanoETCH Model.ETCH5A

last updated:Oct 12, 2024

テルモセラ・ジャパン 本社
テルモセラ・ジャパン 本社
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<30W Low power - Etching control precision 10mW Achieving damage-free and delicate etching processing.

【nanoETCH】Model. ETCH5A Achieves fine and damage-free etching processing with low output RF etching at <30W (control accuracy 10mA). A jointly developed product with the graphene research group at the University of Manchester, led by Nobel Prize winners who discovered graphene in 2010.

    Etching Equipment
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Soft Etching Device [nanoETCH]

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  • Thermosera Japan nanoETCH Product Listing Page
  • Special site - Product/service details - https://pr.mono.ipros.com/thermocera/product/

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**Features and Main Applications** • 2D (Transition Metal Chalcogenides, Graphene exfoliation after material transfer): Surface modification cleaning • Removal of polymer resists such as PMMA and PPA • Surface modification and etching on substrates prone to damage, such as Teflon substrates • h-BN sidewall etching (*'Fluorine Gas Supply Module' option, requires SF6 gas system) • SiO2 etching (*'Fluorine Gas Supply Module' option, requires CHF3 gas system) **Specifications** ◉ Compatible substrates: Up to Φ6 inches ◉ Easy operation with 7" touch panel and PLC automatic sequence ◉ APC automatic pressure control ◉ Up to 3 gas systems (Ar, O2 standard included) *N2 or fluorine gas system can be added ◉ Included PC software: Automatic etching recipe creation, saving, and data logging **Dimensions and Utilities** Dimensions: 750 (W) x 500 (D) x 400 (H) mm Power supply: 200V single phase 15A Process gas: 0.17Mpa 99.99% recommended Vent gas: 34-41kpa Cooling water: 1L/min, 400kpa, 18-20℃ Compressed air: 413-550Kpa

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Applications/Examples of results

2D applications such as graphene and TMDC Resist removal such as PPA and PPMA Damage-free etching on substrates like Teflon, etc.

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nanoPVD_Dimensions: 804(W) x 570(D) x 600(H)mm Body weight: approximately 70kg

◇◆◇ nanoPVD-S10A Magnetron Sputtering Device ◇◆◇

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This is a research and development RF/DC magnetron sputtering device. Despite its high performance and multifunctionality, it fits into limited laboratory space with a compact size and easy operation via a 7-inch front touch panel. ● Achievable pressure: 5x10^-5 Pa (*fastest 30 minutes to 1x10^-4 Pa!) ● Film uniformity: ±3% ● Various options: up/down rotation, heater, cathode for magnetic materials, and more ● 3-source cathode + 3 MFC systems, with additional RF/DC power supply, allowing for versatile applications such as multilayer films and simultaneous deposition. - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: 2" (up to 3 sources) or 1" (1 source) ◉ 2" cathode x up to 3 sources ◉ Easy operation via touch panel with PLC automatic program control ◉ High-precision APC process control with MFC ◉ Up to 3 MFC systems ◉ USB port for Windows PC connection, capable of creating and saving recipes for up to 1000 layers and 50 films. Live data logging on PC. ◉ Vacuum system: TMP + RP (*dry pump option) ◉ Substrate rotation, vertical lift, and heating (Max 500℃) ◉ Quartz crystal film thickness monitor/controller

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Product image of ANNEAL wafer annealing equipment.

Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates

  • Product news

Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

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☆★☆【nanoETCH】Soft Etching Device☆★☆

  • Product news

<30W Low Power Control for Damage-Free Etching Achieves delicate etching processes with an output control precision of 10mW. A jointly developed product with the graphene research group at the University of Manchester, led by Nobel Prize winners who discovered graphene in 2010. 【Features】 • 2D (Transition Metal Chalcogenides, graphene delamination after material transfer): Surface modification cleaning • Removal of polymer resists such as PMMA and PPA • Surface modification and etching on substrates prone to damage, such as Teflon substrates • h-BN sidewall etching (*Option for "Fluorine Gas Supply Module," requires SF6 gas system) • SiO2 etching (*Option for "Fluorine Gas Supply Module," requires CHF3 gas system) 【Specifications】 ◉ Compatible substrates: Up to Φ6 inches ◉ Easy operation with a 7" touch panel and PLC automatic sequencing ◉ Automatic pressure control (APC) ◉ One Ar gas line (standard) + up to three additional lines for N2 and O2 ◉ Connects to a Windows PC with a USB port for automatic etching recipe creation and storage. Data logging on PC.

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Product image of Mini-BENCH-prism

◉Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Experimental Furnace Max 2000℃

  • Product news

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-automatic control A higher model of the tabletop Mini-BENCH with semi-automatic control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-automatic control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Planar heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Various sample heating experiments, such as ultra-high temperature heating of small samples and new material research and development, can be easily performed with simple operations. The main unit is compact yet can be used for research and development in various fields.

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テルモセラ・ジャパン

テルモセラ・ジャパン 本社

Industrial Electrical Equipment

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【Endless possibility_thermal engineering...】 Our company sells vacuum thin film devices for semiconductor and electronic device fundamental research, ultra-high temperature heaters for CVD substrate heating, experimental furnaces, temperature measurement equipment, and more. To meet the endless demand for "heat," which is indispensable in any era, and to respond to various requests in the field of fundamental technology development, we aim to introduce the latest equipment and contribute to research and development in Japan.

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