Supports small-diameter wafers (4 inches) and niche processes for compound semiconductors. Compatible with both crystal processes and wafer processes (alloying and electrode annealing).
A dedicated annealing device designed for special applications such as epitaxial layers of compound semiconductors and the annealing of polished Si wafers. After high vacuum evacuation, the atmosphere is replaced with hydrogen up to atmospheric pressure, allowing for uniform heating at high temperatures (1000°C) in a high-purity reducing atmosphere.
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basic information
A dedicated annealing device of the hot wall type with a horizontal quartz tube. It achieves clean vacuum and high-purity reduction heat treatment using a turbo molecular pump and a dry vacuum pump in an atmospheric hydrogen atmosphere. It comes standard with a quartz tube rapid cooling mechanism, enabling short cycle processing. With expanded functionality, it supports up to 6-inch wafers. In addition to hydrogen atmosphere reduction heat treatment, it can handle various modes such as high vacuum annealing and gas flow heat treatment under reduced pressure. Testing for atmospheric hydrogen annealing can be conducted with an in-house experimental machine. This annealing device is characterized by flexible hard support and meticulous assistance for niche processes.
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Applications/Examples of results
Compound semiconductor annealing Annealing of polished Si wafers Dielectric wafer annealing Electrode film and wiring film annealing
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Company information
Shinko Seiki, as a technology-driven manufacturer, leverages the numerous know-how accumulated particularly in the field of vacuum equipment to deliver innovative products that meet user needs. In recent years, the company has also been challenging cutting-edge fields such as electronics and new materials, aiming to develop truly valuable hardware and software through the advancement of distinctive technologies and their organic integration.
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