Sputtering/Dual Chamber System [MiniLab]

Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

Max 2000℃ Φ6〜8 inch wafer dedicated high-temperature annealing device, capable of small-scale production multi-atmosphere wafer annealing device. ◾️ Max 2000℃ ◾️ Effective heating range: Φ6〜Φ8 inch single wafer type or batch type (multi-stage 5 wafer cassette) ◾️ Heater control: 1 zone or 2 zones (cascade control) ◾️ Heater materials: ・C/C composite: Φ6〜Φ8 inch ・PG coating high-purity graphite: Φ6〜Φ8 inch ◾️ Operating atmosphere: ・Vacuum (1x10-2Pa), inert gas (Ar, N2) ◾️ PLC semi-automatic operation ・Automatic sequence control for vacuum/purge cycle and venting ・Fully automatic operation (optional) ・Touch panel operation, allowing centralized management without dispersed operations. ◾️ Process pressure control ・APC control (MFC flow or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control, or manual adjustment of float meter/needle valve ◾️ PLOT screen graph display, CSV data output

Tabletop Small-Size Experimental Furnace - Space-Saving, Maximum Operating Temperature 2000℃ ◆ Equipment Configuration ◆ We will propose the desired configuration according to your budget and purpose. (A) Minimum Configuration: Chamber + Temperature Control Unit (B) Above Minimum Configuration (A) + Vacuum Exhaust System (Pump, Gauge, Valve, Vacuum Piping) ◉ Cylindrical Heater: For sintering samples in crucibles (for solid, powder, granule, and pellet-shaped samples) ◉ Flat Heater: For sintering Φ1" to Φ6" wafers and small chip samples ◆ Basic Specifications ◆ - Heater: C/C Composite (Carbon Furnace), Tungsten (Metal Furnace) - Insulation Material: Graphite Felt, Tungsten/Molybdenum - Temperature Control: Programmable Temperature Controller, C Thermocouple - Achievable Vacuum Level: 1x10-2 Pascal (*for an empty furnace) - Power Supply Specifications: AC200V 50/60HZ Three-Phase 6KVA - Cooling Water: 3L/min, 0.4Mpa 25-30℃ ◆ Control Box Specifications ◆ - Programmable Temperature Controller - DC Power Supply Unit or External Transformer Box - Current and Voltage Meters - Heater Circuit Trip Switch - Main Power Switch ◆ Options ◆ - Vacuum Exhaust System - Custom Crucibles and Others

We have completely renewed the catalog for the MiniLab series thin film experimental equipment. 【Features of the MiniLab Series】 ◉ Supports sputtering, evaporation (resistive heating, organic, EB), annealing, plasma etching, etc. ◉ Modular design allows for flexible combinations of components (source hybrid types and multi-chamber configurations are possible) ◉ Compact, space-saving design (width 1,200 x depth 560 mm) ◉ Excellent operability: intuitive interface allows for centralized management of all operations via a touch panel without dispersion. We are confident that this will be of great assistance in research and development settings. Please consider it.