List of Sputtering Equipment products
- classification：Sputtering Equipment
61～75 item / All 217 items
Reduce the workload from handling heavy objects! Here are five case studies that solved customer challenges! We are also accepting free consultations and tests tailored to your work!
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Presentation of explanatory materials on JIS and ISO standards. We propose suitable safety barriers from a rich product series! Free rental of demo kits.
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Information on major suppliers! Sputtering target market and supply chain.
- Sputtering Equipment
Introduction of various experimental devices for research and development in semiconductors, electronic devices, fuel cells, displays, and thin film experiments.
- Sputtering Equipment
- Evaporation Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Composite thin film experimental device nanoPVD-ST15A capable of mixed installation of vacuum deposition (metal and organic deposition sources) and sputtering cathodes.
- Sputtering Equipment
- Evaporation Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
![[Hot Stage] Ultra High Temperature ...](https://image.mono.ipros.com/public/product/image/671/2000002653/IPROS21404174246949592221.png?w=280&h=280){kind=small}
An ultra-high temperature substrate heating stage that allows for substrate elevation, rotation, and RF/DC substrate bias all in one device! 'All-In-One' component.
- Sputtering Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
High-efficiency magnetron sputtering cathode compatible with RF, DC, and pulse DC for depositing metals and insulators without impurities. It also excels in maintainability.
- Sputtering Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device: Metal deposition, organic deposition, and sputter cathode installed in a compact frame.
- Sputtering Equipment
- Evaporation Equipment
- Annealing furnace
【MiniLab】 Evaporation/Sputtering Dual Chamber System
Two thin film experimental devices are connected by a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected via the load lock. With Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB evaporation: 7cc crucible x 6 - Resistance heating evaporation x 2 - Organic evaporation limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron cathode x 4 for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma etching stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique "soft etching" technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)
Suitable for the film formation of nanomaterials (metal nanoparticles, nanowires, nanosheets, materials for nanoelectronics)!
- Sputtering Equipment
High-end sputtering process for optical films used in aerospace engineering and medical/bio applications is possible!
- Sputtering Equipment
Ion beam sputtering equipment for research and development as well as small-scale production!
- Sputtering Equipment
DC pulse sputtering is possible (reactive sputtering of insulating films using conductive targets)!
- Sputtering Equipment
We apply hard DLC (diamond-like carbon) through sputtering, suitable for medical supplies and automotive parts! *Demo tests are currently being conducted.
- Sputtering Equipment
DLC film formation (film quality: ta-C domain, surface roughness Ra 0.16 nm, transmittance: 88%) achieved through sputtering, which has had many challenges in the past.
- Sputtering Equipment
It is a device that can be transitioned from a pilot line to a mass production line.
- Sputtering Equipment
There are five expansion slots, allowing for additional installation of sputter chambers, deposition devices, glove boxes, etc.
- Sputtering Equipment