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diode Product List and Ranking from 65 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated： Aggregation Period:Feb 18, 2026～Mar 17, 2026
This ranking is based on the number of page views on our site.

diode Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Feb 18, 2026～Mar 17, 2026
This ranking is based on the number of page views on our site.

  1. 鞍山雷盛電子 China//Electronic Components and Semiconductors
  2. オプトロンサイエンス Tokyo//Optical Instruments
  3. null/null
  4. 4 ライテック Kyoto//Other manufacturing
  5. 5 Toki Commercial Co., Ltd. Tokyo//Trading company/Wholesale
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diode Product ranking

Last Updated： Aggregation Period:Feb 18, 2026～Mar 17, 2026
This ranking is based on the number of page views on our site.

  1. What is Comchip Technology? ライテック
  2. Nantong Electronics (diode manufacturer) high-voltage diode Toki Commercial Co., Ltd.
  3. Reverse current prevention diode DKA40AA220
  4. 4 Photodiode X100-7 (for semiconductor radiation detector) 丸文
  5. 4 Black silicon photodiode ケイエルブイ

diode Product List

211～240 item / All 641 items

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Ultra-low-capacity photodiode

Ultra-low-capacity photodiode

No need for electromagnetic shielding outside! Successfully reduced the capacity of the photodiode to less than a fraction and achieved wideband expansion.

The light-receiving system experiences a decrease in sensitivity when broadened in bandwidth, and high-sensitivity light-receiving ICs have the issue of being easily affected by external noise. We have successfully developed a new type of light-receiving element that addresses these challenges, resulting in a light-receiving IC that is both broadband and high-sensitivity while being less susceptible to external noise. Our new photodiode achieves broadband capability through an ultra-low capacitance that is less than a fraction of the limits of conventional technology, thanks to its unique structure. It can incorporate a shielding effect internally, eliminating the need for external electromagnetic shielding. 【Features】 ■ High sensitivity in a broad bandwidth ■ Parasitic capacitance is less than a fraction compared to conventional photodiodes ■ Light-receiving element unaffected by external noise *For more details, please refer to the PDF document or feel free to contact us.

  • Other semiconductors
  • diode
  • diode

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445nm laser diode

445nm laser diode

Standard products * Available for purchase online [Laser Diode]

445nm laser diode You can easily place an order from Photonicland's website. Please order through the contact form or the link page.

  • Laser Components
  • diode
  • diode

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High current bidirectional TVS diode 'PTVS1-240C-M'

High current bidirectional TVS diode 'PTVS1-240C-M'

Bidirectional high pulses of both positive and negative voltages can be absorbed! Surface mount package that does not take up implementation area.

The "PTVS1-240C-M" is a high-current bidirectional TVS diode rated for a stand-off voltage of 240V, providing bidirectional port protection. It is designed for use in high-power DC bus applications that require a current surge tolerance of 1kA (8/20μs). Compared to typical low-voltage clamp TVS diodes, it allows for a reduction in component count. The temperature coefficient is typically 0.1%/°C, resulting in a stable breakdown voltage with respect to temperature. 【Features】 ■ 1kA (＠8/20us) current tolerance ■ Breakdown voltage and clamp voltage are nearly identical ■ Surge current tolerance has a temperature derating of about 75% ■ Can absorb high pulses of both positive and negative voltages bidirectionally ■ Surface mount package that does not take up much mounting area *For more details, please download the PDF (English version) or feel free to contact us.

  • diode
  • diode

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TVS (for USB2.0 to USB4 applications)

TVS (for USB2.0 to USB4 applications)

Choosing the appropriate TVS (Transient Voltage Suppressor) protects the product from latch-up.

With the development and improvement of USB interfaces and protocols, many smart products are adopting USB Type-C as their connection interface. This allows for the support of diverse video, audio, and data transmission at higher transfer speeds. At the same time, signal transmission has become more susceptible to interference from external power surges. Therefore, the use of TVS diodes for surge protection should be more stringent. However, if users pursue only TVS devices with low clamp voltages without considering other parameters such as operating voltage, there is a risk of affecting real-time communication on the Type-C interface or, in extreme cases, causing latch-up due to EOS (electrical overload), which could damage the circuit. To achieve proper and effective transient voltage surge protection in the interfaces of electronic products with complex signal and power lines, adding TVS diodes to the interface will be the most effective protection solution.

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Laser Diode + TEC Controller (6300 Series)

Laser Diode + TEC Controller (6300 Series)

A benchtop instrument combining a 60W temperature controller and a driver with a range of 100mA to 4A.

■ Equipped with features such as photodiode, modulation input, programming PD bias, RS-232, and USB computer interface. ■ For laser sources, it is equipped with protection circuits, interlocks, and electrostatic protection.

  • Other power sources
  • diode

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Low polarization-dependent loss InGaAs photodiode

Low polarization-dependent loss InGaAs photodiode

Low PDL InGaAs Photodiode

■Effective diameter: 0.3 to 5mm ■High sensitivity ■Cut-off frequency (1.7um) ■Low polarization dependent loss (Low PDL) ■Connector compatible (FC, SC, ST, SMA)

  • Other optical parts
  • Sensors
  • diode

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Linear Array Photodiode

Linear Array Photodiode

Elements 4, 8, 12, and 16 are arranged as a linear array.

■Design with a 250um pitch to match fiber ribbons ■High-speed and low dark current support with an effective diameter of 80um ■Optical isolation of 50dB ■Compatible with O, S, C, and L bands

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InGaAs electronic cooling photodiode

InGaAs electronic cooling photodiode

InGaAs Thermoelectric Cooled PD

■Single/Dual Stage TE Cooler ■Effective diameter: 0.3mm to 5mm ■High shunt resistance ■Low dark current / low leakage current ■High sensitivity ■Cut-off wavelengths: 1.7, 1.9, 2.05, 2.2, 2.6μm ■Standard package: TO-5, TO-8, TO-66 ■Custom package with fiber pigtail and SMA receptacle

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  • diode

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Near-infrared wideband InGaAs photodiode

Near-infrared wideband InGaAs photodiode

Extended InGaAs PD

■Aperture: 0.3mm to 3mm ■Cut-off wavelengths: 1.9μm, 2.05μm, 2.2μm, 2.6μm ■High shunt resistance ■Various lens options available: biconvex lens, plano-convex lens, ball lens ■Package: TO-46, TO-18, TO-5

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Germanium Photodiode (Ge Photodiode)

Germanium Photodiode (Ge Photodiode)

GPD Corporation manufactures power and high-speed germanium transistors, diodes, and infrared photodetectors.

■Various sizes from small to large diameter: 100μm to 25mm ■Wavelength sensitivity range: 800nm to 1800nm ■High linearity: >10dBm ■Various lens options available: biconvex lenses, plano-convex lenses, and ball lenses ■Optical filters: density filters and bandpass filters ■Single and dual-stage electronic cooling available ■4-segment photodiode ■Dual-color (Si/Ge) sandwich photodiode ■Custom accessory packaging available: fiber pigtails, high-reliability pigtails, receptacles, and submounts ■Various packages: TO-46, TO-18, TO-5, TO-8, TO-9, BNC

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  • diode

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Ultraviolet Light Emitting Diode (UV-LED)

Ultraviolet Light Emitting Diode (UV-LED)

◆ UV LED (UV-LED) ◆ 308nm, 325nm, 340nm ◆ Skin treatment, resin curing, sensing

**Bare Chip** This is a high-quality bare chip manufactured with outstanding technology. There are three chip sizes available, and an option for a sub-mount specification can also be selected. - Small (500μm×500μm) bare chip, Medium (750μm×780μm) bare chip, Large (1000μm×1000μm) bare chip *Please inquire as we can also supply it with a sub-mount attached.* **To Metal Can** This is a robust high-reliability (hermetic) specification using a metal can. The diameters available are φ5mm and φ9mm, and you can choose the beam angle from 6° to 145° (full angle). **Hermetic SMD** This product features an industry-standard size SMD package of 3.5mm×3.5mm, equipped with a medium chip or a large high-power chip in the 10mW class. - Middle Power SMD (Medium: equipped with a 750μm×750μm chip), High Power SMD (Large: equipped with a 1000μm×1000μm chip)

  • Other optical parts
  • Other physicochemical equipment
  • diode

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Si photodiode (TO package) (Si PD)

Si photodiode (TO package) (Si PD)

◆Driven under reverse bias conditions ◆Large diameter, square shapes also available ◆Low dark current ◆Silicon PIN photodiode ◆Peak wavelength approximately 940nm

■Spectral detection range: 400nm to 1100nm LD-PD has implemented an inspection system compliant with MIL-I-45208, and adheres to Telcordia test requirements (TA-NWT-00093) and MIL-STD-883 test methods. 【Parameters: Typical values, Symbols, Test conditions】 ● Round shape φ0.2 to φ8.0mm Detector size (mm): φ0.2, φ0.5, φ1, φ2, φ4, φ5, φ8 Response wavelength range (nm): 400 – 1100・λ Responsivity (A/W): 0.40, 0.45, 0.5, 0.5, 0.5, 0.5, 0.55・Re・VR=15V, λ=900nm Response time (nS): 2, 5, 6, 8, 15, 15, 25tr・VR=15V, RL=50Ω Dark current (nA): 1, 2, 3, 5, 12, 40, 60・ID・VR=15V Reverse voltage (V): 100・VB・IR=10μA Capacitance (pF): 0.8, 1.2, 2.0, 6, 20, 30, 70・Cj・f=1MHz, VR=15V Operating voltage (V): 0 to 15・VR Socket: Coaxial/TO-46/TO-5/TO-8 Saturation optical power: 0.3w/cm2

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SPO2 (arterial blood oxygen saturation) to photodiode (PD)

SPO2 (arterial blood oxygen saturation) to photodiode (PD)

■Wide active area ■High sensitivity ■Strong durability ■Wide angle ■Chip on PCB

◆Medical Sensors◆Various Optical Sensors◆Four Selectable Patterns This is a photodiode for receiving light to measure SPO2 (arterial blood oxygen saturation). These photodiodes are incorporated into and used in smartphones, smartwatches, and medical devices. SJ SYSTEM is a specialized manufacturer of technology for measuring SPO2 (arterial blood oxygen saturation) with pulse oximeters, and it manufactures and sells LED modules, PD modules, and reflection modules for SPO2. These products are used in the healthcare field and are utilized in smartphones and smartwatches.

  • Other optical parts
  • Other physicochemical equipment
  • diode

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Silicon avalanche photodiode

Silicon avalanche photodiode

◆High-speed response ◆High bandwidth ◆Low noise ◆Low bias voltage ◆Hermetic TO package ◆Excellent sensitivity and high response device

◆Silicon Avalanche Photodiode ◆Usable with flat mirrors or ball lenses Silicon avalanche photodiodes utilize internal multiplication to achieve impact ionization gain. As a result, they are optimized series of high-response devices that exhibit excellent sensitivity. OSI offers several sizes of detectors that can be used with flat windows or ball lenses for fiber optic applications.

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InGaAs large active area photodiode

InGaAs large active area photodiode

◆Large active area ◆Ideal for confirming beam movement, etc. ◆Sensor applications

The FCI-InGaAs-QXXX series is an InGaAs photodiode with a large active area. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics, and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide products with excellent reliability and cost performance, utilizing efficient manufacturing know-how to meet the requirements of mass production.

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  • diode

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Si position sensor photodiode

Si position sensor photodiode

◆1D or 2D active area effect ◆Compatible with active area size and packaging ◆Position sensing

Segmented, the lateral effect PSD is available in one-dimensional or two-dimensional active areas. The size and packaging of the active area can be adapted to fit a wide range of applications. Since the lateral effect PSD is most suitable for measuring large lateral displacements, segmented detectors are typically used in beam null applications. OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying OEM photodetectors for over 30 years. Based on years of experience, we provide reliable and cost-effective products based on efficient manufacturing know-how that meets the requirements of mass production.

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InGaAs large-diameter photodiode

InGaAs large-diameter photodiode

◆Large diameter active area size ◆Wavelength range: 1100-1620nm ◆IR sensitivity detector

The FCI-InGaAs-XXX-X series with active area sizes of 1mm, 1.5mm, and 3mm are part of OSI Optoelectronics' IR sensitive detectors that have excellent responsiveness from 1100nm to 1620nm (also with weak signal sensitivity). OSI Optoelectronics has world-class manufacturing facilities in India and Malaysia in the field of optoelectronics and has been supplying photodetectors as an OEM for over 30 years. Based on years of experience, they provide reliable and cost-effective products based on efficient manufacturing know-how that meets the requirements for mass production.

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[Problem Solving Case Study] Application Report (Vol. 41)

[Problem Solving Case Study] Application Report (Vol. 41)

Reduced thermal resistance by one-eighth and improved heat dissipation! Bypass diode for solar panels.

At Orinas Co., Ltd., we are always committed to providing "faster responses," "more accurate responses," and "excellent proposals" to meet our customers' needs, contributing to the creation of added value for our customers. In this report, we introduce case studies of problem-solving for our customers. If you are having trouble selecting electronic devices, please feel free to consult us. 【Case Study】 ■ Products adopted by the customer - A bypass diode for solar panels that reduces thermal resistance by one-eighth and improves heat dissipation. ■ Benefits for the customer - Improvement of heat generation issues. ■ Customer's product: Solar panels ■ Issues faced by the customer - High current flow, but the current products were causing significant heat generation, which was problematic. *For more details, please refer to the PDF document or feel free to contact us.

  • diode
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Laser diode

Laser diode

Laser diode

First Sensor GmbH in Germany offers laser diodes with wavelengths ranging from 635 to 905 nm, available in both single and multi-mode options. Additionally, we provide photodiodes (PD) and avalanche photodiodes (APD) suitable for each laser diode, and we can offer proposals as a set.

  • Other optical parts
  • diode
  • diode

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Infrared Light Emitting Diode KL857

Infrared Light Emitting Diode KL857

A high-power infrared light-emitting diode chip has been incorporated into a metal package!

The KL857 infrared light-emitting diode is an infrared LED that incorporates a high-output infrared LED chip into a metal package. It uses a high-output infrared LED (λp: 940nm) and has high performance and reliability in a TO-18 metal package. RoHS-compliant versions are also available. It is suitable for applications such as light sources for photo sensors and light sources for photoelectric switches. For more details, please contact us or refer to the catalog.

  • Sensors
  • diode

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Nippon Chemical Industries NCSCE17A

Nippon Chemical Industries NCSCE17A

This is a high-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.

NCSCE17A is an LED manufactured by Nichia Chemical that is suitable for general-purpose lighting requiring color rendering, high efficiency, and long lifespan.

  • Chip type LED
  • diode

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Nippon Chemical Industries NCSAE17A

Nippon Chemical Industries NCSAE17A

It is a high-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.

NCSAE17A is an LED manufactured by Nichia Chemical that is suitable for general-purpose lighting requiring color rendering, high efficiency, and long lifespan.

  • Chip type LED
  • diode

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Nippon Chemical Industries NE2B757G

Nippon Chemical Industries NE2B757G

It is a high-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.

NE2B757G is an LED manufactured by Nichia Chemical that is suitable for general-purpose lighting requiring color rendering, high efficiency, and long lifespan.

  • Chip type LED
  • diode

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Nippon A&L Chemical's NS2W266G

Nippon A&L Chemical's NS2W266G

It is a high-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.

NS2W266G is an LED for LCD backlight light sources manufactured by Nichia Chemical.

  • Chip type LED
  • diode

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Nippon Yakin Kogyo Co., Ltd. NE2R757G-P6

Nippon Yakin Kogyo Co., Ltd. NE2R757G-P6

High-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.

The NE2R757G-P6 is an LED manufactured by Nichia Chemical that is suitable for general-purpose lighting requiring color rendering, high efficiency, and long lifespan.

  • Chip type LED
  • diode

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Nippon Chemical Industries NSPR346MS

Nippon Chemical Industries NSPR346MS

It is a high-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.

NSPR346MS is a full-color display LED manufactured by Nichia Chemical that can be selected based on the usage environment and application.

  • Bullet-shaped LED
  • diode

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Nippon Chemical Industries NF2W757H-F1

Nippon Chemical Industries NF2W757H-F1

It is a high-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.

The NF2W757H-F1 is an LED manufactured by Nichia Chemical that is suitable for general-purpose lighting requiring color rendering, high efficiency, and long lifespan.

  • Chip type LED
  • diode

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Nippon Chemical Industries NJSR172C

Nippon Chemical Industries NJSR172C

This is a high-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.

NJSR172C is a highly reliable LED manufactured by Nichia Chemical that supports the high safety of vehicles.

  • Chip type LED
  • diode

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