Last Updated： Aggregation Period:Feb 18, 2026～Mar 17, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Feb 18, 2026～Mar 17, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Feb 18, 2026～Mar 17, 2026
This ranking is based on the number of page views on our site.
241～270 item / All 641 items
It is a high-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.
NSPB336DS is a full-color display LED manufactured by Nichia Chemical that can be selected according to the usage environment and application.
A high-power red LED chip has been integrated into a metal package!
The KL3095 parallel light red LED is a red light-emitting diode that incorporates a high-output red LED chip into a metal package. It uses a super high-output red LED (λp: 660nm) and has high performance and reliability in a TO-46 metal package. It is suitable for applications such as light sources for encoders, light sources for photo sensors, and light sources for photoelectric switches. For more details, please contact us or refer to the catalog.
It is a high-reliability LED from Nichia Chemical with a rich variety of packages and characteristics.
The NJCWL024Z-V1MT (Rce00ce) is an LED manufactured by Nichia Chemical that is suitable for general-purpose lighting where color rendering, high efficiency, and long lifespan are required.
It is a two-wavelength light-emitting diode that incorporates red and infrared light-emitting diode chips into a metal package.
KL3012 is a two-wavelength light-emitting diode that incorporates red and infrared light-emitting diode chips into a metal package. - Two-wavelength LED: red (λp: 660nm) and infrared (λp: 880nm) - High performance and high reliability in a TO-18 metal package - Narrow viewing angle (θ: ±40°) and high output It is suitable for applications such as light sources for printed pattern identification, color sensors, and paper quality detection sensors. For more details, please contact us or refer to the catalog.
Surface mount type infrared light-emitting diode
KL5101 is a surface mount type infrared light-emitting diode. 【Features】 - Electrode shape that automatically corrects position during reflow soldering - Package with resin lens - Narrow viewing angle and high output - Lead-free solder, compatible with reflow mounting It is suitable for applications such as light sources for photo sensors and light sources for photoelectric switches. For more details, please contact us or refer to the catalog.
Ideal for constant current supply for LED brightness stabilization!
A constant current diode (hereafter referred to as CRD: Current Regulative Diode) is a diode that, as its name suggests, can supply a constant current even when the voltage fluctuates. It is a component that can continuously provide a constant current across a wide voltage range from low voltages below 1V to high voltages up to 100V. It can supply a constant current to the load regardless of variations in the applied voltage, changes in load resistance, or ripple voltage. Generally, constant current circuits are complex and require multiple components. Additionally, the design is not straightforward, but a CRD can easily achieve constant current characteristics with just one component.
Even with voltage fluctuations, a constant current can be supplied! Ultra-low price diode!
A constant current diode (hereafter referred to as CRD: Current Regulative Diode) is a diode that can supply a constant current even when the voltage fluctuates, as its name suggests. It is a component that can continuously provide a constant current over a wide voltage range, from low voltages below 1V to high voltages up to 100V. It can supply a constant current to the load regardless of fluctuations in the applied voltage, changes in load resistance, or ripple voltage. Generally, constant current circuits are complex and require multiple components. Additionally, the design is not straightforward, but a CRD can easily achieve constant current characteristics with just one component.
GHz band high-frequency diode
High-frequency diodes manufactured by Massachusetts Bay Technologies in the USA, supplied as OEM from space communications to commercial use. 【Features】 ○ Not only original products, but also custom-made manufacturing is possible. ○ Design and manufacturing of equivalent products to other companies' diodes is possible. ○ Capable of responding to cost reduction and discontinuation of manufacturing. ● For other functions and details, please download the catalog.
Introducing the high-performance diode "Step Recovery Diode."
Introducing the high-performance diode "Step Recovery Diode." Massachusetts Bay Technologies in the United States designs and manufactures high-frequency discrete silicon RF semiconductors. We maintain high performance and quality as a service to end-users, supplying products to a wide range of customers, including universities, research institutes, telecommunications, as well as space communication and military applications. With 50 years of experience and achievements in the diode industry, we can also provide special diodes that cannot be manufactured elsewhere. 【Features】 ○ High Efficiency ○ High Output Power ○ Low Order Multiplication (N≦4) For more details, please contact us or download the catalog. *This catalog is in English.
Introducing the high-performance diode "Pin Diode."
Introducing the high-performance diode "Pin Diode." Massachusetts Bay Technologies in the United States designs and manufactures high-frequency discrete silicon RF semiconductors. We maintain high performance and quality as a service to end-users, supplying products to a wide range of customers, including universities, research institutes, telecommunications, as well as space communication and military applications. With 50 years of experience and achievements in the diode industry, we can also provide special diodes that cannot be manufactured elsewhere. 【Specifications】 ○Storage Temperature: -65°C to +175°C ○Operation Temperature: -65°C to +150°C ○Power Dissipation: 250 mW ○Beam Terminal Strength: Planar- 4 grams minimum / Mesa- 6 grams minimum For more details, please contact us or download the catalog. *This catalog is in English.
Introducing the high-performance diode "Schottky Mixer Diode."
Introducing the high-performance diode "Schottky Mixer Diode." Massachusetts Bay Technologies in the United States designs and manufactures high-frequency discrete silicon RF semiconductors. We maintain high performance and quality as a service to end-users, supplying products to a wide range of customers, including universities, research institutions, telecommunications, as well as for space communication and military applications. With 50 years of experience and achievements in the diode industry, we can also provide special diodes that cannot be manufactured elsewhere. 【Specifications】 ○ Storage Temperature: -65°C to +175°C ○ Operation Temperature: -65°C to +150°C ○ Incident RF CW Power: 100 mW max For more details, please contact us or download the catalog. *This catalog is in English.
System maintenance is necessary, but a new idea to physically seal off the "invasion point" of ransomware...
Our products are equipped with overwhelming defense capabilities that "physically isolate" against both external intrusions and internal leaks. Even those who are not IT-savvy can handle it, making it a security solution that truly integrates "peace of mind in connectivity" and "protective mechanisms." Data diodes are top-class defense devices specialized in unidirectional communication, but we have received many inquiries about whether they can also be used for bidirectional communication. This is a testament to the high regard for their "protective power." VPNs used for remote maintenance are becoming increasingly ineffective due to the evolution of attack methods, making it difficult to balance intrusion prevention with rapid and efficient maintenance. Therefore, we strongly recommend a high-security configuration utilizing OWCD: Remote Desktop. Our application separates standard Windows communications and routes them through different paths while inserting OWCD, effectively blocking unauthorized access to the source side. This is an extremely effective method for adding "upper-layer defense" to existing environments. Furthermore, combining it with other security measures allows for multilayered defense, minimizing potential damage in case of an incident. We have received many inquiries from system integrators, and this configuration has proven results and trust. For inquiries, please visit our website at the link below ⤵.
Securing the supply chain is a headache for managers. With OWCDFile SecureLink, you can strengthen security even with partners at different levels.
DX through database integration such as ERP can lead to a situation where a virus propagates within the supply chain, causing extensive damage if one mistake is made. By effectively utilizing the data diode OWCD, which restricts communication in one direction, we can achieve micro-segmentation and mitigate damage that spreads through the network. If we add file transfers between parties, even if the security management levels and malware countermeasures differ, we can clarify the points of responsibility and create separate networks, preventing everything from coming to a halt. OWCD physically enforces one-way communication restrictions. It may seem very simple, but by ensuring that what needs to be stopped is indeed stopped, while allowing the internet to be used in various ways, we can ensure that critical systems: - Block unauthorized intrusions at the source - Block unauthorized transmissions at the receiving end It can be used for various applications, including understanding production status using ERP, IoT, and remote monitoring data collection. There are increasing examples of SIers utilizing OWCD in their proposals to clients. Please make use of it. For inquiries, please visit our website through the link below.
Ransomware damage is increasing, and the risks are also growing. If breached, only a handful succeed in preventing data leakage. Are you implementing measures to prevent theft?
Zero Trust Security: Did you know that if you don't operate it properly at all times, you could have been breached a long time ago? With "stealth cyber attacks," half of passwords are compromised, allowing intrusions to occur openly, and 80% of fraudulent signals are masked, making it difficult to notice them at the time... Once it gets to this point, the probability of a bad move failing is only a few percent, allowing for unrestricted actions. Did you know that there are actually two ways to use OWCD? One is to protect the core without allowing intrusions. The other is to avoid actual damage by "not revealing anything." There are very few cases where simply breaching a system achieves the objective. If an intruder gains access, they will scout the target's system, infiltrate critical areas, encrypt data to halt operations, extract confidential information, or continuously send malicious emails... these actions result in actual damage. For this to happen, the virus itself must communicate with an external malicious intruder and be remotely controlled. If that communication cannot occur, even if a breach happens, no actual damage has occurred yet, allowing time to detect and eliminate unknown viruses. Cybersecurity can be strengthened depending on how you use OWCD. Please consider it. For inquiries, please use the related link below.
Is there any possibility that the backup storage data could be leaked? It's also important to have a system in place that prevents data from being stolen.
Ransomware encryption and information leaks are occurring one after another. The intrusion routes are diverse, including email, web, social media, and VPN devices, and as the use of generative AI increases, so does the risk. Once breached, recovery can take days, during which business operations may come to a halt. Therefore, a multi-layered backup that combines online and offline methods is essential. Ransomware does not achieve its goals merely by infiltrating. The real damage occurs when it conducts reconnaissance internally, infiltrates critical areas, and compromises the company's credibility through data encryption or exfiltration. Attackers need to maintain communication from the point of intrusion to their location for remote control, so if this can be interrupted, it can prevent the worst-case scenario and secure time for detection and eradication. The data diode "OWCD" physically restricts communication to one direction only, allowing for this signal to be blocked. Backups are the most critical assets to protect, and when they are accessible externally, they become prime targets for attackers. By blocking unnecessary communication routes, large-scale damage can be avoided. The level of defense can be significantly enhanced depending on how the system is set up. Please consider this. For inquiries, please visit the related link below ⤵ There is also an explanatory video.
The compatibility of Zero Trust and data diodes is actually outstanding! The number of adoption cases is steadily increasing. Let's make visible progress!
Zero Trust is fundamentally about "not trusting," but there is the challenge of "how to connect to places that cannot be fully trusted." This is where the data diode "OWCD" comes into play! When connecting operational technology (OT) networks, such as those in factories and power plants, to external networks (IT), there is a growing need for "secure one-way communication to send data," leading to an increase in the adoption of OWCD. Today, we will discuss "secure transfer of Syslog" within this context. To realize Zero Trust, it is essential to continuously collect and analyze logs and monitoring data from each device. However, it is nearly impossible to constantly perform collection and analysis if we do not send the OT information, which we want to keep cleaner, to the often challenging IT side. This makes it perfect for the purpose of simply sending OT-side logs and monitoring data to the IT-side SIEM. In fact, the adoption is rapidly increasing from infrastructure engineering applications. For SIers, if you want to promote cybersecurity, let's effectively utilize boundary control to protect yourselves. There is a video explanation linked below! Feel free to reach out for inquiries.
![[Analysis Case] SiC by SIMS](https://image.mono.ipros.com/public/product/image/235/2000244338/IPROS1446214273548249992.jpg?w=280&h=280)
Imaging SIMS allows for the evaluation of localized elements.
We disassembled a commercially available SiC Schottky diode and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant element Al in a 40μm square area to a depth of 0.5μm. From the data processing after the imaging SIMS measurements, we extracted the depth-wise concentration distribution of Al localized within the sample surface and present a case study comparing the concentration distributions for each pattern.
High voltage diodes available in 3kV, 4kV, 6kV, 8kV, 10kV, 12kV, and 14kV.
The company is a diode manufacturer established in 1969 in Jiangsu Province, China, with a strong focus on high-voltage diodes and a significant track record with Japanese manufacturers. This catalog also includes company introduction, application areas, and the production process of high-voltage diodes. 【High-Voltage Diodes Offered】 ●3kV: 2CL703 ●4kV: 2CL704 ●6kV: 2CL70A ●8kV: 2CL71A ●10kV: 2CL72A ●12kV: 2CL73A ●14kV: 2Cl74A 【Contents (Partial)】 ■Company Overview ■Product Introduction ■Application Areas ■High-Voltage Diode Production Process ■Production Line *We also handle equivalent products of the DHM3 series. *For more details, please refer to the PDF document or feel free to contact us.
We handle various types of laser diodes. We have many available, so please take a look.
We offer various laser diodes at low prices and short delivery times!
It is optimal for high-voltage power applications due to its high speed and high voltage resistance, allowing for reduced losses and miniaturization. It supports 650V to 1200V and 5A to 10A.
Advanced power components are ideal for applications such as converters that require high peak forward surge capability, low forward voltage drop, reduced thermal resistance, and minimized power loss. They achieve high efficiency. SiC Schottky barrier diodes can be used in high-voltage power applications due to their ability to reduce losses and miniaturize components while maintaining high speed and high voltage resistance. ◇ Features - Low power loss, high efficiency - Low reverse leakage current - High peak forward surge current capability (IFSM) - Reduced EMI - Maximum operating TJ up to 175 °C - UL 94V-0 compliant - RoHS compliant, lead-free, halogen-free Available in multiple packages. Suitable for high-frequency switching power supplies. - TO220-2 - TO247-3 - TO252 - DFN8x8
Introducing a nanoparticle layer into MIM tunnel diodes to significantly improve rectification performance!
・Metal/insulator/metal tunnel diodes (MIM tunnel diodes) are used when rectifying signals of frequencies in the infrared and terahertz regions. ・ However, it is difficult to improve the rectification performance because there is a trade-off between electrical resistance and asymmetry. ・ The invention has solved the above issue by introducing metallic nanoparticle layers (NPs) into the MIM tunnel diodes and changing the tunnel barrier at forward and backward biases by the effect of electric field concentration. ・ Since the invention has greatly improved rectifying performance compared to tunnel diodes without NPs,the present tunnel diodes can be expected to be used to high-frequency devices (Optical rectenna, IR, THz detector).
Wavelength range from 405nm to 1650nm! High-quality collimated semiconductor laser.
We would like to introduce the "Collimated Laser Diode" manufactured by Wavespectrum Laser, which we handle. We offer high-quality collimated semiconductor lasers with single-mode and multi-mode beams. The wavelength range is from 405nm to 1650nm, and the output ranges from 5mW to 5W. Photodiodes are optional. On the other hand, using aspheric lenses allows the collimated laser diodes to have less divergence and achieve high-quality beams. 【Features】 - Equipped with single-mode and multi-mode beams - Wavelength range from 405nm to 1650nm - Output from 5mW to 5W - Achieves high-quality beams with less divergence *For more details, please download the PDF or feel free to contact us.
Switching PIN diode in a surface mount small package (2.5x1.2x0.8mm) for transmission and reception antenna switching circuits of various communication devices!
The "L5204F" is a PIN diode designed for high-frequency power switching applications such as antenna switching for various wireless communication devices. It is also suitable for RFID reader and writer applications. 【Main Features】 ○ Power switching is possible in the VHF and UHF bands ○ Low insertion loss and high isolation ○ Low forward series resistance ○ Low capacitance between terminals 〇 Rfs(typ)=0.5Ω @IF=50mA, f=100MHz 〇 Ct(typ)=0.6pF @VR=40V, f=100MHz ○ Surface mount type plastic molded package ○ RoHS compliant ● For more details, please download the catalog or contact us.
Standard ceramic package
The "L8104" is a PIN diode in a ceramic package designed for high-frequency power switching for various wireless communication equipment's transmit and receive antenna switching. 【Features】 ○ Power switching is possible in the VHF and UHF bands ○ Low insertion loss and high isolation ○ Low forward series resistance 〇 Rfs(typ)=0.5Ω @IF=50mA, f=100MHz 〇 Ct(typ)=0.8pF @VR=40V, f=100MHz 〇 Hermetic ceramic MELF package ○ RoHS compliant 〇 Lead-free ● For more details, please download the catalog or contact us.
Low power consumption products in mold packages.
The "L5208F" is a PIN diode designed for high-frequency power switching applications such as antenna switching for various portable wireless communication devices. It is suitable for antenna switches in the VHF/UHF bands. 【Main Features】 ○ Ideal for antenna switches in portable radios for VHF/UHF bands ○ Low forward series resistance ○ Low capacitance between terminals ○ Rfs(typ)=0.45Ω @IF=10mA, f=100MHz ○ Ct(typ)=0.6pF @VR=20V, f=100MHz ○ RoHS compliant ○ Pb-free/Halogen-free ● For more details, please download the catalog or contact us.
High voltage ceramic package products
L8104-240 is a ceramic package PIN diode designed for high-frequency power switching applications such as antenna switching for various wireless communication devices. 【Main Features】 ○ Power switching is possible in the VHF and UHF bands ○ Low reverse current ○ Low insertion loss and high isolation ○ Low forward series resistance ○ Peak reverse voltage 240V 〇 Rfs(typ)=0.5Ω @IF=50mA, f=100MHz 〇 Ct(typ)=0.8pF @VR=40V, f=100MHz ● For more details, please download the catalog or contact us.
This is a silicon PIN diode designed for high-frequency power switching for the transmission and reception antenna switching of various communication devices.
The "L8107" is ideal for switching antennas in various communication devices. 【Main Features】 ○ Optimal for antenna switching in the HF-UHF band ○ Small capacitance at zero bias, with very low reverse bias dependence. ○ Low insertion loss and high isolation. ○ Low series resistance. ○ Rfs(typ)=1.2Ω @IF=50mA, f=100MHz ○ Ct(typ)=0.4pF @VR=40V, f=100MHz ○ Environmentally friendly new ceramic MELF package ○ RoHS compliant ● For more details, please download the catalog or contact us.
Peak repetitive reverse voltage: 10KV; average forward current: 5mA; maximum surge current: 0.5A; reverse recovery time: 100nS.
Place of Origin: Liaoning, China (Mainland) ；Brand Name: LeadSun ；Model Number: 2CL72 ；Type: Rectifier Diode； Package Type: Surface Mount； Max. Forward Voltage: 5V~500V ；Max. Reverse Voltage: 5KV~500KV； Max. Forward Current: 5mA~60A ；Max. Reverse Current: 1.0μA~200μA ；Customzied: 1KV to 500KV
Peak reverse voltage: 14KV; average forward current: 5mA; surge current: 0.5A;
Place of Origin: Liaoning, China (Mainland) ；Brand Name: LeadSun ；Model Number: 2CL74 ；Type: Rectifier Diode； Package Type: Surface Moun；t Max. Forward Voltage: 5V~500V ；Max. Reverse Voltage: 5KV~500KV ；Max. Forward Current: 5mA~60A ；Max. Reverse Current: 1.0μA~200μA ；Customzied: 1KV to 500KV
Peak repetitive reverse voltage: 12KV; Average forward current: 450mA; Dimensions: 7.5*22mm or 4.5*15mm;
2KV High voltage current rectifier diode CL04-12 : Peak Reverse Repetitive Voltage: 12KV Average Current: 450mA Max Foward Voltage: 16V Max Forward Surge Current: 40A Leakage Current: 5.0uA Maximum Junction Temperature: 130 °C Storage Temperature: -40~+130 °C Dimension: diameter 7.5*22mm or 4.5*15mm Trr: 100nS
