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diode Product List and Ranking from 63 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated： Aggregation Period:May 06, 2026～Jun 02, 2026
This ranking is based on the number of page views on our site.

diode Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:May 06, 2026～Jun 02, 2026
This ranking is based on the number of page views on our site.

  1. 鞍山雷盛電子 China//Electronic Components and Semiconductors
  2. オーエン Saitama//Electronic Components and Semiconductors
  3. 新光電子 Tokyo//Electronic Components and Semiconductors
  4. 4 オプトロンサイエンス Tokyo//Optical Instruments
  5. 5 ライテック Kyoto//Other manufacturing
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diode Product ranking

Last Updated： Aggregation Period:May 06, 2026～Jun 02, 2026
This ranking is based on the number of page views on our site.

  1. Background of Data Diode Product Development and Introduction Image リョウセイ
  2. OWCD for boundary-restricted data diodes in IoT, production management, and healthcare operations. MHIパワーエンジニアリング 高砂事業部
  3. [Free Giveaway] LRC Diode Catalog Toki Commercial Co., Ltd.
  4. Reverse current prevention diode DKA40AA220
  5. 4 What is Comchip Technology? ライテック

diode Product List

241～270 item / All 617 items

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Constant Current Diode (CRD) S Series

Constant Current Diode (CRD) S Series

Even with voltage fluctuations, a constant current can be supplied! Ultra-low price diode!

A constant current diode (hereafter referred to as CRD: Current Regulative Diode) is a diode that can supply a constant current even when the voltage fluctuates, as its name suggests. It is a component that can continuously provide a constant current over a wide voltage range, from low voltages below 1V to high voltages up to 100V. It can supply a constant current to the load regardless of fluctuations in the applied voltage, changes in load resistance, or ripple voltage. Generally, constant current circuits are complex and require multiple components. Additionally, the design is not straightforward, but a CRD can easily achieve constant current characteristics with just one component.

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GHz band high-frequency diode

GHz band high-frequency diode

GHz band high-frequency diode

High-frequency diodes manufactured by Massachusetts Bay Technologies in the USA, supplied as OEM from space communications to commercial use. 【Features】 ○ Not only original products, but also custom-made manufacturing is possible. ○ Design and manufacturing of equivalent products to other companies' diodes is possible. ○ Capable of responding to cost reduction and discontinuation of manufacturing. ● For other functions and details, please download the catalog.

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High-performance diode "Step Recovery Diode"

High-performance diode "Step Recovery Diode"

Introducing the high-performance diode "Step Recovery Diode."

Introducing the high-performance diode "Step Recovery Diode." Massachusetts Bay Technologies in the United States designs and manufactures high-frequency discrete silicon RF semiconductors. We maintain high performance and quality as a service to end-users, supplying products to a wide range of customers, including universities, research institutes, telecommunications, as well as space communication and military applications. With 50 years of experience and achievements in the diode industry, we can also provide special diodes that cannot be manufactured elsewhere. 【Features】 ○ High Efficiency ○ High Output Power ○ Low Order Multiplication (N≦4) For more details, please contact us or download the catalog. *This catalog is in English.

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High-performance diode "Pin Diode"

High-performance diode "Pin Diode"

Introducing the high-performance diode "Pin Diode."

Introducing the high-performance diode "Pin Diode." Massachusetts Bay Technologies in the United States designs and manufactures high-frequency discrete silicon RF semiconductors. We maintain high performance and quality as a service to end-users, supplying products to a wide range of customers, including universities, research institutes, telecommunications, as well as space communication and military applications. With 50 years of experience and achievements in the diode industry, we can also provide special diodes that cannot be manufactured elsewhere. 【Specifications】 ○Storage Temperature: -65°C to +175°C ○Operation Temperature: -65°C to +150°C ○Power Dissipation: 250 mW ○Beam Terminal Strength: 　Planar- 4 grams minimum / Mesa- 6 grams minimum For more details, please contact us or download the catalog. *This catalog is in English.

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High-performance diode "Schottky mixer diode"

High-performance diode "Schottky mixer diode"

Introducing the high-performance diode "Schottky Mixer Diode."

Introducing the high-performance diode "Schottky Mixer Diode." Massachusetts Bay Technologies in the United States designs and manufactures high-frequency discrete silicon RF semiconductors. We maintain high performance and quality as a service to end-users, supplying products to a wide range of customers, including universities, research institutions, telecommunications, as well as for space communication and military applications. With 50 years of experience and achievements in the diode industry, we can also provide special diodes that cannot be manufactured elsewhere. 【Specifications】 ○ Storage Temperature: -65°C to +175°C ○ Operation Temperature: -65°C to +150°C ○ Incident RF CW Power: 100 mW max For more details, please contact us or download the catalog. *This catalog is in English.

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Preventing the Syslog collection circuit from being used by malware: Conditions for Zero Trust.

Preventing the Syslog collection circuit from being used by malware: Conditions for Zero Trust.

The compatibility of Zero Trust and data diodes is outstanding! The number of adoption cases is steadily increasing. Let's make visible progress in secure measures!

Zero Trust is fundamentally about "not trusting," but since the premise is "connecting," there is the challenge of "how to connect under the premise of not connecting." This is where the data diode "OWCD" comes into play! When connecting operational technology (OT) networks, such as those in factories and power plants, to external networks (IT), the demand for "sending data securely via one-way communication" is increasing, leading to a rise in the adoption of OWCD. Today, we will discuss "secure transfer of Syslog" within this context. To realize Zero Trust, it is essential to continuously collect and analyze logs and monitoring data from each device, but if that system management information cannot be sent to infrastructure engineers, it becomes nearly impossible to conduct detailed analysis. Once breached, the consequences can be catastrophic... OWCD is perfect for a route that simply sends logs and monitoring data to SIEM. It only allows one-way flow. The adoption by infrastructure engineers is rapidly increasing. It is indispensable for support services. For system integrators, if you want to promote cybersecurity, let's effectively utilize boundary control as well. There is a video explanation linked below! Feel free to reach out for inquiries.

  • Other security
  • Firewall and intrusion prevention
  • filtering
  • diode

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[Analysis Case] SiC by SIMS

[Analysis Case] SiC by SIMS

Imaging SIMS allows for the evaluation of localized elements.

We disassembled a commercially available SiC Schottky diode and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant element Al in a 40μm square area to a depth of 0.5μm. From the data processing after the imaging SIMS measurements, we extracted the depth-wise concentration distribution of Al localized within the sample surface and present a case study comparing the concentration distributions for each pattern.

  • Contract Analysis
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Nantong Electronics (diode manufacturer) high-voltage diode

Nantong Electronics (diode manufacturer) high-voltage diode

High voltage diodes available in 3kV, 4kV, 6kV, 8kV, 10kV, 12kV, and 14kV.

The company is a diode manufacturer established in 1969 in Jiangsu Province, China, with a strong focus on high-voltage diodes and a significant track record with Japanese manufacturers. This catalog also includes company introduction, application areas, and the production process of high-voltage diodes. 【High-Voltage Diodes Offered】 ●3kV: 2CL703 ●4kV: 2CL704 ●6kV: 2CL70A ●8kV: 2CL71A ●10kV: 2CL72A ●12kV: 2CL73A ●14kV: 2Cl74A 【Contents (Partial)】 ■Company Overview ■Product Introduction ■Application Areas ■High-Voltage Diode Production Process ■Production Line *We also handle equivalent products of the DHM3 series. *For more details, please refer to the PDF document or feel free to contact us.

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Laser diodes, various types

Laser diodes, various types

We handle various types of laser diodes. We have many available, so please take a look.

We offer various laser diodes at low prices and short delivery times!

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Bourns SiC Schottky Barrier Diode * Low Loss High Efficiency

Bourns SiC Schottky Barrier Diode * Low Loss High Efficiency

It is optimal for high-voltage power applications due to its high speed and high voltage resistance, allowing for reduced losses and miniaturization. It supports 650V to 1200V and 5A to 10A.

Advanced power components are ideal for applications such as converters that require high peak forward surge capability, low forward voltage drop, reduced thermal resistance, and minimized power loss. They achieve high efficiency. SiC Schottky barrier diodes can be used in high-voltage power applications due to their ability to reduce losses and miniaturize components while maintaining high speed and high voltage resistance. ◇ Features - Low power loss, high efficiency - Low reverse leakage current - High peak forward surge current capability (IFSM) - Reduced EMI - Maximum operating TJ up to 175 °C - UL 94V-0 compliant - RoHS compliant, lead-free, halogen-free Available in multiple packages. Suitable for high-frequency switching power supplies. - TO220-2 - TO247-3 - TO252 - DFN8x8

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Tohoku University Technology: The technology to improve tunnnel diode rectification performance : T22-255

Tohoku University Technology: The technology to improve tunnnel diode rectification performance : T22-255

Introducing a nanoparticle layer into MIM tunnel diodes to significantly improve rectification performance!

・Metal/insulator/metal tunnel diodes (MIM tunnel diodes) are used when rectifying signals of frequencies in the infrared and terahertz regions. ・ However, it is difficult to improve the rectification performance because there is a trade-off between electrical resistance and asymmetry. ・ The invention has solved the above issue by introducing metallic nanoparticle layers (NPs) into the MIM tunnel diodes and changing the tunnel barrier at forward and backward biases by the effect of electric field concentration. ・ Since the invention has greatly improved rectifying performance compared to tunnel diodes without NPs,the present tunnel diodes can be expected to be used to high-frequency devices (Optical rectenna, IR, THz detector).

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Molded PIN diode for L5204F high-frequency power switch

Molded PIN diode for L5204F high-frequency power switch

Switching PIN diode in a surface mount small package (2.5x1.2x0.8mm) for transmission and reception antenna switching circuits of various communication devices!

The "L5204F" is a PIN diode designed for high-frequency power switching applications such as antenna switching for various wireless communication devices. It is also suitable for RFID reader and writer applications. 【Main Features】 ○ Power switching is possible in the VHF and UHF bands ○ Low insertion loss and high isolation ○ Low forward series resistance ○ Low capacitance between terminals 〇 Rfs(typ)=0.5Ω @IF=50mA, f=100MHz 〇 Ct(typ)=0.6pF @VR=40V, f=100MHz ○ Surface mount type plastic molded package ○ RoHS compliant ● For more details, please download the catalog or contact us.

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L8104 Ceramic PIN Diode for High-Frequency Power Switch

L8104 Ceramic PIN Diode for High-Frequency Power Switch

Standard ceramic package

The "L8104" is a PIN diode in a ceramic package designed for high-frequency power switching for various wireless communication equipment's transmit and receive antenna switching. 【Features】 ○ Power switching is possible in the VHF and UHF bands ○ Low insertion loss and high isolation ○ Low forward series resistance 〇 Rfs(typ)=0.5Ω @IF=50mA, f=100MHz 〇 Ct(typ)=0.8pF @VR=40V, f=100MHz 〇 Hermetic ceramic MELF package ○ RoHS compliant 〇 Lead-free ● For more details, please download the catalog or contact us.

  • diode
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L5208F Molded PIN Diode for High-Frequency Power Switch

L5208F Molded PIN Diode for High-Frequency Power Switch

Low power consumption products in mold packages.

The "L5208F" is a PIN diode designed for high-frequency power switching applications such as antenna switching for various portable wireless communication devices. It is suitable for antenna switches in the VHF/UHF bands. 【Main Features】 ○ Ideal for antenna switches in portable radios for VHF/UHF bands ○ Low forward series resistance ○ Low capacitance between terminals ○ Rfs(typ)=0.45Ω @IF=10mA, f=100MHz ○ Ct(typ)=0.6pF @VR=20V, f=100MHz ○ RoHS compliant ○ Pb-free/Halogen-free ● For more details, please download the catalog or contact us.

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L8104-240 high-frequency power switch ceramic PIN diode

L8104-240 high-frequency power switch ceramic PIN diode

High voltage ceramic package products

L8104-240 is a ceramic package PIN diode designed for high-frequency power switching applications such as antenna switching for various wireless communication devices. 【Main Features】 ○ Power switching is possible in the VHF and UHF bands ○ Low reverse current ○ Low insertion loss and high isolation ○ Low forward series resistance ○ Peak reverse voltage 240V 〇 Rfs(typ)=0.5Ω @IF=50mA, f=100MHz 〇 Ct(typ)=0.8pF @VR=40V, f=100MHz ● For more details, please download the catalog or contact us.

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High-frequency ceramic PIN diode ideal for RF switches.

High-frequency ceramic PIN diode ideal for RF switches.

This is a silicon PIN diode designed for high-frequency power switching for the transmission and reception antenna switching of various communication devices.

The "L8107" is ideal for switching antennas in various communication devices. 【Main Features】 ○ Optimal for antenna switching in the HF-UHF band ○ Small capacitance at zero bias, with very low reverse bias dependence. ○ Low insertion loss and high isolation. ○ Low series resistance. ○ Rfs(typ)=1.2Ω @IF=50mA, f=100MHz ○ Ct(typ)=0.4pF @VR=40V, f=100MHz ○ Environmentally friendly new ceramic MELF package ○ RoHS compliant ● For more details, please download the catalog or contact us.

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2CL72 Accelerating Device Diode for Electrostatic Coating

2CL72 Accelerating Device Diode for Electrostatic Coating

Peak repetitive reverse voltage: 10KV; average forward current: 5mA; maximum surge current: 0.5A; reverse recovery time: 100nS.

Place of Origin: Liaoning, China (Mainland) ；Brand Name: LeadSun ；Model Number: 2CL72 ；Type: Rectifier Diode； Package Type: Surface Mount； Max. Forward Voltage: 5V~500V ；Max. Reverse Voltage: 5KV~500KV； Max. Forward Current: 5mA~60A ；Max. Reverse Current: 1.0μA~200μA ；Customzied: 1KV to 500KV

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2CL74 Accelerating Device Diode for Electrostatic Coating

2CL74 Accelerating Device Diode for Electrostatic Coating

Peak reverse voltage: 14KV; average forward current: 5mA; surge current: 0.5A;

Place of Origin: Liaoning, China (Mainland) ；Brand Name: LeadSun ；Model Number: 2CL74 ；Type: Rectifier Diode； Package Type: Surface Moun；t Max. Forward Voltage: 5V~500V ；Max. Reverse Voltage: 5KV~500KV ；Max. Forward Current: 5mA~60A ；Max. Reverse Current: 1.0μA~200μA ；Customzied: 1KV to 500KV

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High Voltage Rectifier Diode CL04-12

High Voltage Rectifier Diode CL04-12

Peak repetitive reverse voltage: 12KV; Average forward current: 450mA; Dimensions: 7.5*22mm or 4.5*15mm;

2KV High voltage current rectifier diode CL04-12 : Peak Reverse Repetitive Voltage: 12KV Average Current: 450mA Max Foward Voltage: 16V Max Forward Surge Current: 40A Leakage Current: 5.0uA Maximum Junction Temperature: 130 °C Storage Temperature: -40~+130 °C Dimension: diameter 7.5*22mm or 4.5*15mm Trr: 100nS

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High voltage fast recovery rectifier diode 20KV/20mA

High voltage fast recovery rectifier diode 20KV/20mA

Peak reverse voltage: 20KV; Average forward current: 20mA; Surge current: 2A; Dimensions: φ3*12mm; Reverse recovery time: 100nS.

High voltage fast recovery rectifier diodes 20KV/20mA : Peak reverse repetitive voltage: 20KV Average current: 20mA Max foward voltage: 55V Max forward surge current: 2A Leakage current: 2.0uA Dimension: φ3*12mm Trr: 100nS

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High voltage rectifier diode 2CLG10KV/25mA

High voltage rectifier diode 2CLG10KV/25mA

Peak reverse voltage: 10KV; average forward current: 25mA; surge current: 0.5A; low leakage current: 2.0uA;

10KV high voltage rectifier diode 2CLG10KV25mA : RoHS Certification and high reliability low reverse current level fast recover time Peak reverse repetitive voltage: 10KV Max foward voltage: 23V Average forward current: 25mA Surge current: 0.5A Leakage current: 2.0uA

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High Voltage High Frequency Rectifier Diode CL01-12D

High Voltage High Frequency Rectifier Diode CL01-12D

Peak repetitive reverse voltage: 12KV; Average forward current: 350 mA; Surge current: 30A.

Place of Origin: Liaoning, China (Mainland) ；Brand Name: Leadsun ；Model Number: CL01-12D ；Type: Rectifier Diode；Package Type: Surface Mount；Max. Forward Voltage: 13V； Max. Reverse Voltage: 12KV； Max. Forward Current: 350mA； Max. Reverse Current: 2uA； small dimension: 5*9mm；Packaging Details:200 pcs in one bag, 25 bags in one carton

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High Voltage Rectifier Diode CL08-08T

High Voltage Rectifier Diode CL08-08T

Peak reverse voltage: 8KV; average forward current: 500 mA; low leakage current: 2.0uA; surge current: 30A;

Place of Origin: Liaoning, China (Mainland) ；Brand Name: Leadsun ；Model Number: CL08-08T； Type: Rectifier Diode； Package Type: Surface Mount ；Max. Forward Voltage: 16V； Max. Reverse Voltage: 8KV Max. Forward Current: 500mA ；Max. Reverse Current: 5.0uA ；fast recovery: 100nS；Packaging Details: 200 pcs in one bag, 25 bags in one carton；

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2CL75 High Voltage Rectifier Diode

2CL75 High Voltage Rectifier Diode

Type: Rectifier Diode Maximum Forward Voltage: 60V Maximum Reverse Voltage: 16KV Maximum Forward Current: 5mA Maximum Reverse Current: 2.0uA

2CL75 High Voltage Rectifier Diodes 16KV : Peak reverse repetitive voltage: 16KV Max foward voltage: 60V Max forward surge current: 5.0mA Leakage current: 2.0uA Trr: 100nS

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High voltage high frequency rectifier diode 2CL15KV/550mA

High voltage high frequency rectifier diode 2CL15KV/550mA

Type: Rectifier diode Maximum forward voltage: 16V Maximum reverse voltage: 15KV Maximum forward current: 550mA Maximum reverse current: 5.0uA

high voltage high frequency rectifier diode 2CL15KV/550mA : Peak reverse repetitive voltage: 15KV Average current: 550mA Max foward voltage: 16V Max forward surge current: 45A Leakage current: 5.0uA Dimension: 7.5*22mm Trr: 100nS

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2CL2FL High Voltage Rectifier Diode

2CL2FL High Voltage Rectifier Diode

Type: Rectifier Diode Maximum Forward Voltage: 22V Maximum Reverse Voltage: 15KV Maximum Forward Current: 100mA Maximum Reverse Current: 2.0uA

2CL2FL Hot selling global market high voltage high current rectifier diode : Peak reverse repetitive voltage: 15KV Average current: 100mA Max foward voltage: 22V Max forward surge current: 10A Leakage current: 2.0uA Dimension: φ4.5*15mm Trr: 100nS

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2CL2FF High Frequency Diode High Voltage Avalanche Diode

2CL2FF High Frequency Diode High Voltage Avalanche Diode

Type: Rectifier Diode Maximum Forward Voltage: 16V Maximum Reverse Voltage: 8KV Maximum Forward Current: 100mA Maximum Reverse Current: 2.0uA

2CL2FF high frequency diode high voltage avalanche diode : Peak reverse repetitive voltage: 8KV Average current: 100mA Max foward voltage: 16V Max forward surge current: 10A Leakage current: 2.0uA Dimension: φ4.5*15mm Trr: 100nS

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CL01-09 9KV High Voltage Rectifier Diode

CL01-09 9KV High Voltage Rectifier Diode

Type: Rectifier Diode Maximum Forward Voltage: 10V Maximum Reverse Voltage: 9KV Maximum Forward Current: 350mA Maximum Reverse Current: 2uA

Top Quality CL01-09 9KV High Voltage Rectifier Diodes : Repetitive Peak Reveres (VRRM): 9KV Maximum Junction Temperature (Tjmax): 120 °C Storage Temperature(Tstg): -40~+120 °C Average Forward Current(IO): 350 mA Forward Surge Current(IFSM): 30 A

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CL08-10T High Voltage Fast Recovery Diode

CL08-10T High Voltage Fast Recovery Diode

Type: Rectifier Diode Maximum Forward Voltage: 18V Maximum Reverse Voltage: 10KV Maximum Forward Current: 500mA Maximum Reverse Current: 5.0uA

Top Quality 10KV high voltage ultra fast recovery rectifier CL08-10T : Repetitive Peak Reveres (VRRM): 10KV Maximum Junction Temperature (Tjmax): 125 °C Max foward voltage: 18V Storage Temperature(Tstg): -40~+125 °C Average Forward Current(IO): 500 mA Forward Surge Current(IFSM): 30A Leakage current: 2.0uA

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2CLG20KV/5mA High Frequency Diode

2CLG20KV/5mA High Frequency Diode

Maximum forward voltage: 5V~500V Maximum reverse voltage: 5KV~500KV Maximum forward current: 5mA~60A Maximum reverse current: 1.0μA~200μA

high frequency diode for particle accelerator 2CLG20KV/5mA for HV generator, transformer testing and electrostatic generator : Feature: Avalanche characteristic More sizes to choose vacuum molded, non-corrosive epoxy resin case Tj:-40℃——+120℃ Application: High voltage rectifier used in electrostatic cleaning High voltage generator High voltage testing equipment General purpose high voltage rectifier, voltage multiplier assembly

  • diode
  • diode

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