Last Updated： Aggregation Period:Aug 27, 2025～Sep 23, 2025
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We consistently carry out everything from crystal growth of single crystal sapphire to cutting, grinding and polishing, PSS processing, GaN epitaxial growth, and special processing!
In the doujin industry, we mainly provide sapphire materials using the Kyropoulos method. Our sapphire substrates are produced in domestic factories as well as through contract manufacturing with reputable overseas manufacturers.
A high-current substrate suitable for miniaturized power devices!
The "Hybrid Copper Thickness Coexistence Substrate" is a high-current substrate that allows for the coexistence of 300μm thick copper foil and 70μm thin copper foil within the same layer, enabling switching between them. It achieves a reduction in assembly processes and component count, making it suitable for power devices represented by GaN and SiC, which are becoming more compact. 【Features】 ■ Switchable between 300μm and 70μm ■ 300μm and 70μm can be interwoven ■ Combination of copper inlays is possible *For more details, please download the PDF or feel free to contact us.
With a rich lineup of copper foil thicknesses, we can accommodate current values from a few amperes to several hundred amperes!
The "High Current Substrate" is a printed circuit board that can carry large currents ranging from several tens to several hundred amperes, featuring thick copper foil. We offer "Ultra Thick Copper High Current Substrates" that use copper thicknesses of 300μm, 400μm, and 500μm, exceeding the conventional copper thickness of 105 to 240μm, as well as "Irregular Copper Thickness Coexisting Substrates" suitable for power devices represented by GaN and SiC, which are becoming more compact. 【Features】 - In the case of 300μm, coexistence with 50μm thin copper foil is possible in the same layer. - For thicknesses of 500μm or more, it is possible to draw copper foil out of the substrate from the inner or outer layers. - Exposure within the substrate is also possible. - Terminal processing, bending processing, and three-dimensional shaping of the substrate are possible. *For more details, please download the PDF or feel free to contact us.
We offer single crystal lithium niobate (LN / LiNbO3) ingots, wafers, and special processing.
Product Name: Single Crystal Lithium Niobate (LN / LiNbO3) Size: Φ2”, Φ3”, Φ4”, Φ6” Orientation: Specifiable Thickness: 250um, 350um, 500um, Specifiable Finish: Single-sided mirror, Double-sided mirror, Others Quantity: 10 pieces or more, Mass production available Manufacturing: Made in Japan, Made in China
Consistent production from crystal growth to processing in-house. High-quality crystal substrate surfaces without processing distortion.
【Optimal for Epitaxial Growth】 Oxide substrates for thin film growth have been contributing to advancements in science and technology since the 1980s, providing substrates such as SrTiO3 and sapphire for high-temperature superconducting thin films and GaN. For epitaxial growth substrates, the crystal quality, surface smoothness, flatness, and the presence or absence of crystal lattice strain at the very surface are crucial. Our company has achieved consistent in-house production from crystal growth to processing through years of technological accumulation. With our high-precision processing technology, we continue to provide high-quality crystal substrate surfaces. We always keep standard specifications in stock and deliver them within approximately 10 days after order placement. We also offer custom-made options for surface orientation, shape, and off-angle according to your needs, so we handle products with specifications not listed in our lineup. Please feel free to contact us. *For more details, please inquire or refer to our catalog.*
![[Research Material] Global Market for Gallium Nitride (GaN) Substrates](https://image.mono.ipros.com/public/product/image/934/2001463577/IPROS75731221439146869495.jpeg?w=280&h=280)
World Market for Gallium Nitride (GaN) Substrates: Sapphire on GaN, Si on GaN, SiC on GaN, GaN on GaN, Others, ...
This research report (Global Gallium Nitride (GaN) Substrates Market) investigates and analyzes the current status and outlook for the global market of gallium nitride (GaN) substrates over the next five years. It includes information on the overview of the global gallium nitride (GaN) substrates market, trends of major companies (sales, selling prices, market share), market size by segment, market size by major regions, and distribution channel analysis. The segments by type in the gallium nitride (GaN) substrates market include Sapphire on GaN, Si on GaN, SiC on GaN, GaN on GaN, and others, while the segments by application cover medical, automotive, consumer electronics, general lighting, and military/defense. The regional segments are categorized into North America, the United States, Europe, Asia-Pacific, Japan, China, India, South Korea, Southeast Asia, South America, the Middle East, and Africa to calculate the market size of gallium nitride (GaN) substrates. The report also includes the market share of major companies in the gallium nitride (GaN) substrates market, product and business overviews, and sales performance.
Gallium nitride (GaN) is a very hard and mechanically stable wide-bandgap semiconductor.
Gallium nitride (GaN) is a very hard and mechanically stable wide-bandgap semiconductor. Due to its higher breakdown voltage, faster switching speed, higher thermal conductivity, and lower on-resistance, GaN-based power devices are significantly superior to silicon-based devices.
Introducing hardware development examples from Chantilly, including FPGAs.
We will assist you in bringing your requests to life, from specification development to product visualization. Even if you have questions like, "Can this be done? I still can't visualize it," that's perfectly fine. In such cases, we will gather ready-made elements, shape them, and first let you hold them so we can work together to solve the issues.
We provide custom structure MBE/MOCVD epitaxial growth on compound semiconductor epitaxial InP substrates.
We provide custom structure MOCVD epitaxial growth on GaAs substrates ranging from 2 inches to 6 inches. We offer comprehensive services for GaAs epitaxial substrates to companies, universities, and scientific research institutions, including epitaxial structure design, epitaxial materials, and testing analysis.
![Development board for Qseven module [ROM-DB7500]](https://image.mono.ipros.com/public/product/image/60e/2000513511/IPROS97028402398666720535.jpeg?w=280&h=280)
Development board for RISC Qseven module
- 24-bit LVDS panel support - 1 PCIe x1 - 1 SATA, 4 UART, 1 RJ-45, 4 USB 2.0 (with 1 OTG) - HD audio codec - Dual CAN bus - Supports VGA and HDMI output - Onboard SD card slot, SIM card slot RoHS COMPLIANT 2002
This is the original LED backlight power supply board from Kenik System.
The "KSLBC-4(D4)" is an LED backlight power supply board for SVGA and VGA LCDs manufactured by Densitron. 【Features】 - It can be easily configured with a general-purpose microcontroller for ON/OFF and brightness adjustment. - It uses devices with built-in overvoltage protection, so even if the LED is disconnected, the device is protected. - It is compact and lightweight, measuring 67×20mm.
A measuring device for locating cable faults and determining their causes! Ideal for wiring checks.
We will investigate the location of wiring troubles (disconnection or short circuit). Since it is possible to measure the installation length from the cable end, it is also effective for inventory management of wire materials. --------------------------------------------------------------------------- Koga Electronics Co., Ltd. 2-9-19 Minami-hara, Hiratsuka City, Kanagawa Prefecture TEL: 0463-34-2334 info@kogadenshi.co.jp Facebook page: http://www.facebook.com/kogadenshi
![[Hardware Development Achievements] 64ch FPIX Board](https://image.mono.ipros.com/public/product/image/96d/2000610317/IPROS15520091796991262499.png?w=280&h=280)
The created histogram is transferred to the PC via SiTCP! It has a structure with a heat-dissipating aluminum block placed at the bottom.
We assisted with KEK's FPIX project. This is a substrate developed in the measurement instrument development room to collect signals from a Si-APD chip, where the signals are sampled at 0.5 ns by an FPGA and histogrammed within the FPGA. The created histogram is transferred to a PC via SiTCP. To efficiently dissipate heat from components like the FPGA, most of the components are placed on the underside, and a heat-dissipating aluminum block is structured on the bottom. 【Overview of Achievements】 ■ Service: Hardware Development ■ Client: High Energy Accelerator Research Organization ■ Location: KEK PF *For more details, please refer to the related link page or feel free to contact us.
Through thorough discussions with our clients, we will carry out design and manufacturing that meets your requests and ensures your satisfaction. Of course, our aftercare is also comprehensive!
We mainly handle circuit board design and manufacturing, logic circuit design, and mechanical design and manufacturing. 【Development Examples】 - P-THIN-GEM A neutron detector capable of measuring two-dimensional images of materials using neutrons and TOF (Time-Of-Flight) information. - 8ch-5Gsps-Digitizer Writes analog signals to analog memory at speeds of up to 5Gsps. - BRoaD III A module that facilitates the verification of signal logic, input switching, and comparison of outputs from multiple logic circuits. - ADC-SiTCP An ADC board capable of digitizing 16-channel balanced analog inputs at 40Msps. - Acrylic chamber for moisture supply A discharge experiment case for Kinki University. An acrylic case that allows observation of discharges while supplying moisture. ★ We specialize in circuit design using FPGA (VeriLog) and the development of devices incorporating hardware TCP. *For more details, please feel free to contact us.
