Electron microscope Product List and Ranking from 35 Manufacturers, Suppliers and Companies

Low Voltage Electron Microscope 'LVEM25'

Nanoparticle observation is used worldwide as a screening TEM.

The "LVEM25" is a low-voltage electron microscope that provides high-contrast images from samples prepared using conventional methods. Three powerful imaging modes are available in a compact single device. Switching between modes can be easily operated via software, allowing for rapid imaging of the same area of interest in TEM, STEM, and ED modes. 【Main Technical Features】 ■ Compact design ■ No special facilities required: can be installed in various locations ■ Permanent magnet lens: no cooling needed ■ Electrostatic field emission gun: high contrast ■ Control unit and software: complete imaging control, etc. *For more details, please download the PDF or feel free to contact us.

Company：FITリーディンテックス
Price：Other

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Tabletop Low Voltage Electron Microscope 'LVEM 5'

Nano-scale on the tabletop! Equipped with four imaging modes on a single benchtop.

The "LVEM 5" is a tabletop low-voltage electron microscope that seamlessly combines four different imaging functions into a single benchtop device, eliminating the need to move samples between microscopes. Furthermore, with just a click of a button, you can image the same area of interest in TEM, SEM, and STEM modes. 【Features】 ■ High-contrast nanoscale imaging ■ Unique benchtop design ■ Simple workflow *For more details, please download the PDF or feel free to contact us.

Company：FITリーディンテックス
Price：Other

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Transmission electron microscope

The fine structure of the sample can be observed at the nanoscale using a transmission electron microscope (TEM)!

Our company is capable of producing high-precision thin film samples for TEM observation and achieving clear sub-nanometer order structural observations through advanced TEM observation techniques.

Company：イオンテクノセンター
Price：Other

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Basic Analysis Methods for Things that are Similar Yet Different

Introducing the flow from optical microscope observation with a wide range of applications to SEM observation and EDX elemental analysis!

We will introduce the flow from basic and widely applicable optical microscope observation to SEM observation and EDX elemental analysis. Observation using an optical microscope is one of the fundamental observation techniques, allowing for quick examination of general shapes and other features. Its advantage lies in the ability to obtain color information, making it effective for observing abnormalities associated with corrosion and other changes. In this document, we also provide detailed explanations of "observation using SEM" and "elemental analysis using EDX" with the help of photos and graphs. We encourage you to read it. [Contents] ■ Observation using an optical microscope ■ Observation using SEM ■ Elemental analysis using EDX *For more details, please refer to the PDF document or feel free to contact us.

Company：アイテス
Price：Other

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Comparison of cross-sectional observation images

We will introduce suitable observation methods for cross-sectional observation of chip resistors and copper wiring sections!

To assist you in selecting an observation device, we will introduce the differences in visibility between a metal microscope, W-SEM, and FE-SEM. When observing the cross-section of a chip resistor, certain areas may be difficult to observe at low magnification with a metal microscope, but with SEM observation, the greater depth of field allows for high-flatness images even at low magnification. When observing the cross-section of copper wiring, the copper-resin interface and the condition inside cracks can be observed with W-SEM, but with FE-SEM, even the crystal grains and tiny voids at the connection interface can be clearly observed. [Comparison] ■ Cross-section observation of chip resistors: Comparison of images between metal microscope and W-SEM ■ Cross-section observation of copper wiring: Comparison of images between W-SEM and FE-SEM *For more details, please download the PDF or feel free to contact us.

Company：アイテス
Price：Other

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Scanning Electron Microscopy (SEM)

High magnification observation (up to about 300,000 times) is possible.

SEM is a technique that allows for obtaining contrast based on the information from electrons emitted from a sample when an electron beam is directed at it, revealing the sample's surface roughness and compositional differences. - High magnification observation (up to about 500,000 times) is possible with simple operation. - Observation of secondary electron (SE) images, backscattered electron (BSE) images, and transmitted electron (TE) images is possible. - Observation can be conducted within an acceleration voltage range of 0.1 to 30 kV. - Samples up to 6 inches can be loaded into the device (depending on the equipment). - By combining options with SEM, various types of information can be obtained: - Elemental analysis using an EDX detector is possible. - Measurement of electron beam induced current (EBIC) allows for evaluation of the junction position and shape in semiconductors. - Crystal information can be obtained using electron backscatter diffraction (EBSD) method. - Three-dimensional structural information can be acquired through repeated FIB processing and SEM observation (Slice & View). - Cooling observation and atmosphere-controlled observation are available.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

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[Analysis Case] Observation of the Buffer Layer Interface in CIGS Thin-Film Solar Cells

Crystal structure evaluation of the Zn(S, O, OH)/CIGS junction interface using ultra-high resolution STEM.

By directly observing the junction interface using a Cs collector-equipped STEM device, it is possible to evaluate the crystal structure at the atomic level. In this study, we conducted HAADF-STEM imaging of the buffer layer/CIGS interface using Zn(S, O, OH) in the buffer layer of CIGS thin-film solar cells and evaluated the structure. As a result, it was suggested that the crystal structure at the junction is unclear compared to samples using CdS as the buffer layer, indicating that it is not an epitaxial junction.

Company：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Visualization of Strain at Heterojunction Interfaces in Compounds

Lattice image analysis using the FFTM method

The Fast Fourier Transform Mapping method is a technique that performs a Fourier transform on high-resolution TEM images to analyze and visualize the minute lattice distortions of crystals from the spot positions of the FFT pattern. Through FFTM analysis, it is possible to (1) analyze lattice distortions in the x and y directions of the image, (2) analyze lattice distortions in the crystal plane direction, (3) analyze the distribution of crystal plane spacing and crystal plane orientation, (4) display the data distribution as a histogram, and (5) detect distortions of 0.5% with a spatial resolution of 5 nm. An example of its application to compound heterojunction multilayer film samples is presented.

Company：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Preprocessing Technology for Specific Areas of Wafers and Chips

We will sample only the target area and produce samples without breaking the wafer.

We will extract small pieces from the wafer chip without breaking it and thin them down for high-resolution TEM observation and analysis. Furthermore, by cutting and preparing samples while leaving the areas to be analyzed, we will conduct TEM observation and analysis of the target areas from any desired direction and provide the data. Through advanced TEM sample preparation techniques, we will meet various observation, analysis, and evaluation needs.

Company：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Evaluation of the Diffusion Layer of Power Transistors (DMOSFET)

You can understand the positional relationship between the gate layer, source layer, and body layer.

We investigated the shape and positional relationship of the poly-Si gate, n-type source layer, and p-type body layer of commercially available power transistors (DMOSFETs). By overlaying AFM images, we can also understand the positional relationship with the gate.

Company：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Evaluation of pn Junction and Grain Structure of CIGS Film

Electron beam induced current method and crystal orientation analysis using SEM.

CIGS thin-film polycrystalline solar cells are expected to be low-cost next-generation solar cells. Development is underway for large-area and high-quality production. To evaluate the characteristics of the polycrystalline thin film, we conducted assessments of the pn junction using EBIC and crystal grain evaluation using EBSD on the same cross-section. We prepared a cross-section of the CIGS film and measured the open-circuit voltage (EBIC) by scanning an electron beam, visualizing the in-plane distribution of the open-circuit voltage. Additionally, by measuring EBSD on the same surface, we correlated the distribution of the open-circuit voltage with the crystal grains.

Company：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Evaluation of Crystal Grains in CIGS Film

Crystal orientation analysis using SEM.

CIGS thin-film polycrystalline solar cells are being developed as next-generation solar cells expected to achieve low cost, large area, and high quality, and crystal information is required in this process. The EBSD method allows for the evaluation of crystal grains in CIGS films. The crystal information obtained from the EBSD method mainly includes orientation and grain size.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

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[Analysis Case] Structural Observation of the Hall Side Wall ONO Film

Planar TEM observation of specific areas using the FIB method.

By using FIB technology that allows for processing at the nanoscale, it is possible to perform planar TEM observations of specific areas. This enables the confirmation of the ONO three-layer structure (silicon oxide film / silicon nitride film / silicon oxide film) of the capacitor insulating film on the sidewall of the hole, which is difficult to verify through cross-sectional observations.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

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Spherical aberration correction function

TEM: Transmission Electron Microscopy

In a STEM device equipped with a spherical aberration correction function (Cs corrector), high-resolution observation and high-sensitivity analysis at the atomic level are possible. The resolution is approximately 0.10 nm.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

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[Analysis Case] Evaluation of the Structure and Dispersion of Microparticles in Liquid

Observation of cross-sectional structure of liquid samples using cryo-SEM.

When evaluating the particle size and structure of fine particles dispersed in a liquid, conventional methods involved drying the liquid to extract the fine particles as a powder, which were then measured using an electron microscope. However, this method was not suitable for investigating how fine particles are actually dispersed in the liquid used. Therefore, we will introduce a case where cryo-processing and SEM observation were performed to directly evaluate how fine particles are dispersed within a liquid sample.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

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[Analysis Case] Evaluation of Electrode Materials for Lithium-Ion Secondary Batteries

Cross-sectional observation using atmosphere-controlled ion polishing (IP) processing is possible.

The electrodes of lithium-ion secondary batteries are very significant constituent materials that greatly influence the performance and reliability of the battery, such as its capacity. By performing ion polishing (IP) processing on the electrode materials after charge-discharge cycle testing under controlled atmospheric conditions, we can accurately observe them while minimizing degradation due to atmospheric exposure. In this instance, we will present a case that verifies the effect of atmospheric control on the positive electrode materials of lithium-ion secondary batteries after charge-discharge cycles by comparing the results of SEM observations after IP processing.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

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[Analysis Case] Elemental Analysis of Eyeshadow Components using TEM, EDX, and EELS

Capable of nano-order morphological observation and elemental analysis.

Transmission electron microscopy (TEM) allows for morphological observation and elemental analysis on the order of μm to nm. Since eyeshadows are aggregates of solid particles, we conducted the analysis directly using TEM. After TEM observation, we performed EDX analysis on specific areas within the field of view to estimate the materials based on the constituent elements. Furthermore, it is possible to distinguish crystal types through EELS analysis.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

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[Analysis Case] Structural Evaluation of Fine Transistors

High-resolution TEM observation using Cs-corrected TEM

By using a Cs-corrected TEM device that compensates for spherical aberration, it is possible to observe the cross-sectional structure of devices with high resolution. This case presents data from high-resolution (HR)-TEM observation and EDX elemental distribution analysis of commercially available MPU transistor components. Even for fine multilayer structures like FinFETs, it is possible to clearly observe the structure and elemental distribution of the devices using a Cs-corrected TEM.

Company：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Morphological Observation and Component Analysis of Solid Polymer Fuel Cell Catalyst Materials

Evaluation of catalyst particles using SEM, STEM, and EDX.

The electrodes of fuel cells are supported by Pt particles or Pt alloy (such as PtRu) particles on carbon. Due to the fine structure of these catalyst particles, which are on the order of a few nanometers, SEM and TEM analyses are used for morphological observation and compositional analysis. In addition to evaluations in the initial state, degradation after current application has been reported, including modulation of alloy composition, Ru leaching, and an increase in catalyst particle size; high spatial resolution HAADF observation and EDX analysis are very effective for these evaluations. Furthermore, SEM observation allows for the confirmation of the shape of the carbon support and the state of the catalyst particles.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

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[Analysis Case] Evaluation of Crystal Defects in SiC Power Devices Using PL and TEM

High-resolution TEM observation of crystal defects detected by PL mapping.

In PL (photoluminescence) mapping, it is possible to identify the positions of crystal defects from the luminescent areas. Furthermore, by performing high-resolution STEM observation (HAADF-STEM images) at the same locations, we can capture stacking defects. In this case study, we investigated commercially available SiC power devices using PL mapping and STEM. After identifying the positions of stacking defects through PL mapping, we conducted μ-sampling at the defect edge and performed cross-sectional STEM observation.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

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[Analysis Case] Comprehensive Evaluation of CMOS Sensors

Reverse engineering of smartphone components

We will introduce a case where lenses and CMOS sensor chips were extracted from commercially available smartphones and evaluated. Depending on the purpose, we created flat and cross-sectional surfaces through polishing and FIB processing, and confirmed the layered structure and layers using TEM and SEM. Furthermore, we identified the types of films using EDX. At MST, we can handle everything from disassembly to analysis in a consistent manner.

Company：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] STEM/EDX and Image Simulation for Crystal Structure Evaluation

The evaluation of the crystal structure can be performed based on the STEM images and the results of atomic composition measurements.

By measuring the sample, it is possible to evaluate the crystal structure through the combination of results obtained and simulations. This document introduces a case study in which the crystal structure is discussed by comparing the results obtained from HAADF-STEM and EDX measurements on polycrystalline neodymium magnets with simulated images using the respective measurement conditions. The combination of measurement results and computational simulation results allows for a deeper understanding of the crystal structure.

Company：一般財団法人材料科学技術振興財団　MST
Price：Other

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[Analysis Case] Structural Analysis of DRAM Chips using TEM and SEM

Reverse engineering of DRAM on the product's internal substrate.

We will conduct a comprehensive analysis of DRAM, a representative memory, from product level to device microstructure analysis through TEM observation. By performing appearance observation, layer analysis, and Slice & View, we will grasp the overall structure, control the FIB processing position at the nanoscale, and observe the microstructure of the memory section through TEM imaging after thin section formation.

Company：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Extraction of Active Material from Battery Cathode Material and Data Analysis

We determined the particle size of active substances from SEM images using deep learning and data analysis.

Deep learning enables the extraction of target objects from images. Additionally, by analyzing the regions corresponding to the obtained targets, information can be obtained in numerical form. In this instance, we used deep learning to extract active material particles and detect cracks in cross-sectional SEM images of battery cathode materials. Extraction is also possible for 3D data, such as Slice&View data. We extracted particles with and without cracks from the 3D data and calculated their respective particle sizes. Measurement methods: SEM, Slice&View, computational science, AI, data analysis Product fields: Solar cells, secondary batteries, fuel cells Analysis purposes: Structural evaluation, shape evaluation, failure analysis, defect analysis For more details, please download the materials or contact us.

Company：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Failure Analysis of SiC Transistor using Slice & View

Check the leak path by 3D visualization of SEM images.

For the SiC transistor, where the leak location was identified using a backside emission microscope, cross-sectional SEM observation was conducted using Slice & View. With Slice & View, it is possible to capture images of the leak location without missing it by performing cross-sectional observations at a pitch of several tens of nanometers around the leak area. By converting the SEM images into 3D, the leak path can be confirmed. Measurement method: Slice & View, EMS Product area: Power devices Analysis purpose: Failure analysis, defect analysis, product investigation For more details, please download the materials or contact us.

Company：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Component Analysis of Leakage Areas in SiC Power Transistors

It is possible to perform magnified observation and EDX analysis at the gate destruction location identified by Slice & View.

We conducted Slice & View on a SiC transistor where the leak location was identified using a backside emission microscope, and performed magnified observation and SEM-EDX analysis at the confirmed destruction site. Bright contrast was observed in the reflected electron images, indicating the segregation of Si and Ni. It is believed that some segregation of elements such as Si and Ni occurred due to the destruction caused by the leak. Measurement methods: Slice & View, SEM-EDX, EMS Product field: Power devices Analysis purpose: Failure analysis, defect analysis, product investigation For more details, please download the materials or contact us.

Company：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Composition Analysis of Particles on a Wafer

Shape observation and simple quantitative analysis using SEM-EDX.

Control of particles in the semiconductor wafer manufacturing process is extremely important for ensuring wafer quality. In this case study, we estimated what the particles were on a Si wafer through SEM observation, EDX analysis, and simple quantification. The SEM equipment, which has high spatial resolution in the submicron range and can scan areas of several centimeters, allows for rapid inference of what the particles on the wafer are based on shape and composition information, enabling quick identification of the generation process. Analysis linked to coordinate data from defect inspection equipment is also possible.

Company：一般財団法人材料科学技術振興財団　MST
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[Analysis Case] Composite Analysis of Specific Areas within Electronic Devices (C0572)

Non-destructive assessment of specific areas inside the device! Evaluation of detailed structure and composition information of specific areas through cross-sectional observation.

Our company offers technologies suitable for structural evaluation of electronic devices, and we propose analytical methods tailored to the observation field and objectives. In a case where we investigated specific areas of a device using X-ray CT and FIB-SEM, we first used X-ray CT to observe the internal structure of the entire sample and identify specific areas. Next, we used FIB-SEM to confirm the detailed structure of the specific structures identified on the vias. 【Measurement and Processing Methods】 ■[SEM] Scanning Electron Microscopy ■[SEM-EDX] Energy Dispersive X-ray Spectroscopy (SEM) ■X-ray CT Method ■[FIB] Focused Ion Beam Processing *For more details, please download the PDF or feel free to contact us.

Company：一般財団法人材料科学技術振興財団　MST
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Electron microscope Product List and Ranking from 35 Manufacturers, Suppliers and Companies | IPROS GMS

Electron microscope Manufacturer, Suppliers and Company Rankings

Electron microscope Product ranking