神港精機 List of Products and Services

Supported by highly reliable standard hardware and a wealth of experience, Shinko Seiki has been active in many fields since launching its first machine in 1967. We provide state-of-the-art equipment that consistently leads the way with flexible and advanced software.

The "Vacuum Deposition Device for Wafer Processes" is a batch-type deposition device designed for forming electrode films on wafers up to 6 inches in size. It has a wealth of experience in mass production applications for discrete ICs, compound ICs, and MEMS devices. The device can stably form high-quality electrode films due to its film formation mechanism, which excels in film thickness uniformity, and an oil-free exhaust system that enables rapid evacuation. It boasts a high operational rate as a deposition device for mass production applications. 【Features】 ■ Highly reliable basic configuration ■ Abundant optional mechanisms - Evaporation sources, multi-beam electron guns (10kW), resistance heating evaporation sources, multi-source simultaneous deposition mechanisms - High-temperature heating (up to 550°C) = three-sided planetary dome - Substrate cleaning, ion guns, RF bombardment mechanisms - Substrate dome, three-sided planetary dome, revolution dome, high-temperature heating revolution dome *For more details, please refer to the PDF materials or feel free to contact us.

The "Vacuum Deposition Device for Research and Development" is a series of compact deposition devices suitable for universities, public research institutions, and basic experiments. We offer two models: a front-door type equipped with an electronic evaporation source as standard and a simplified experimental type based on a fully manual resistance heating source. Both models (front-door type and simplified experimental type) can be flexibly customized according to purpose and cost. We have demo units available for sample testing. 【Features】 ■ Proven hardware with flexible cost options ■ A wide range of optional features tailored to specific needs (high-temperature heating, substrate cooling, multi-source simultaneous deposition, evaporation sources for organic materials, lift-off process support) ■ Support for ionization mechanisms such as plasma electrodes and RF coils, with options for additional plasma electrodes ■ Consistent customer support from sample testing to hardware customization and post-delivery follow-up *For more details, please refer to the PDF materials or feel free to contact us.

The "Lift-off Process Compatible Vacuum Deposition System" is a dedicated deposition device designed for the lift-off process, widely used in optical devices and high-frequency communication devices such as compound semiconductors and SAW devices. Equipped with an electron gun and resistance heating electrodes as evaporation sources, it enables the formation of thick films, including high-melting-point electrode films and precious metals. It excels in the verticality of the incident angle of evaporated particles onto the substrate, and low-temperature deposition is possible due to various mechanisms that prevent temperature rise of the substrate during film formation (substrate water cooling mechanism, reflective electron trap for the electron gun, radiation light prevention measures). **Features** - Verticality of the incident angle of deposition particles onto the substrate (90°±3° at 6-inch wafers) - Low-temperature deposition (below 70°C = proven value) due to the substrate water cooling mechanism - High-speed exhaust with a large-diameter exhaust system and clean background for dense film quality - Flexible hard and soft compatibility with a rich variety of options (single wafer type = CtoC conversion, load lock conversion, composite process = load lock conversion + bonding with other process chambers) - A demo unit is permanently available for sample testing. *For more details, please refer to the PDF document or feel free to contact us.*

We offer a rapid temperature rise and fall type "horizontal annealing device" that can be processed in vacuum, oxygen atmosphere (at atmospheric pressure), and reducing atmosphere (at atmospheric pressure). It is capable of processing various substrates (wafers, ceramics, glass, mounted substrates) up to 6 inches, and has a proven track record in applications such as annealing of thin films and wafers, firing of nano metal pastes, and curing of organic materials. For those who wish to evaluate our equipment, we offer sample testing. Please contact us for details on specifications and available test contents. 【Features】 ■ Uniform heating treatment in various atmospheres (vacuum, N2, O2, H2) (up to 900°C) ■ Rapid cooling through the movement of the heating furnace body ■ Processing in a clean atmosphere using quartz tubes ■ Wide range of application support *For more details, please feel free to contact us.

Our company offers an RtoR-type "plasma treatment device" suitable for surface treatments such as cleaning and hydrophilization of flexible substrates like films and metal foils. With vacuum plasma, it is possible to select process gases and plasma modes tailored to the substrate and application, addressing processes that are difficult with atmospheric pressure plasma. We share a common basic structure with our well-established roll-to-roll sputtering equipment, aiming to improve reliability and reduce costs. It is effective for surface treatment before thin film deposition, achieving significant results in the removal of organic materials and hydrophilization. 【Features】 ■ Effective surface treatment using vacuum plasma ■ Selectable plasma modes (DC, RF / ion gun) for process optimization ■ Flexible customization options *For more details, please feel free to contact us.

Maximizing the reducing power of hydrogen to achieve high-quality thin films and substrate surfaces that are unprecedented. Ideal for thermal processing (bake and anneal) of delicate compound devices and dielectric substrates. High reliability supported by proven results and experience ensures safety. Responding from the initial stage, including testing, based on extensive achievements in enhancing the quality of electrodes and wiring films, controlling the resistance and stress of high melting point metal films, and end processing of polished wafers for special applications.

A load-lock type sputtering device based on single-sheet substrate transport, sharing the process chamber and transport mechanism with a higher-end model (multi-chamber type). Capable of meeting high-level film quality requirements for mass production and prototyping of various ICs (discrete ICs, custom ICs, compounds). Proven track record in the development of next-generation devices (ferroelectric film development, oriented nitride film formation) in both software and hardware. Achievements include AlN films for UV-LED templates, oxide films for sensors, highly uniform electrode films, thin-film heaters, ferroelectric (PZT) films, and many others.

A AlN template on a sapphire substrate necessary for reducing the manufacturing cost of UV-LEDs is created by sputtering. An AlN film with a C-axis orientation of less than 100 arc/sec is formed by sputtering at low temperatures (below 700°C). This contributes to the cost reduction of UV-LEDs with a simple and stable process and high throughput. Sample testing is currently underway, and development for expansion into high-frequency devices is also in progress.

A top-class vacuum pump exhaust unit in the industry. Boasting a large number of deliveries over many years. By combining water-sealed vacuum pumps, oil rotary vacuum pumps, dry pumps, and mechanical boosters, we achieve new performance and value. We solve vacuum exhaust issues for a wide range of applications, including chemical processes such as drying, distillation, and degassing, metallurgical applications like degassing, hard film coating equipment, CVD equipment, and general industrial applications such as resin molding!

Actively responding to various applications and substrates that are difficult to accommodate with standard specifications. Dedicated mechanisms are prepared for many substrates, including R&D, discrete components, compounds, MEMS, packaging, assembly processes, masks, and small FPDs. Tray transport of substrates is also standard, enabling film deposition and processing of different types of substrates on the same device through atmospheric substrate handling. In addition to application-specific cathodes (wide erosion, ferromagnetic materials, oxides, reactive types), we support a wide range of applications with special substrate mechanisms (high-temperature heating, magnetic field application, cooling, etc.). Dedicated devices are individually designed based on process tests using in-house demonstration machines.

Ideal for forming high heat-resistant wear-resistant films necessary for the coating of precision lens molds. Precious metal alloys such as Pt and Ru suitable for lens mold coatings are efficiently formed using a multi-target simultaneous sputtering method with a small-diameter cathode. Additionally, films with excellent heat resistance and hardness can also be formed using a nano-multilayer structure. A special substrate holder that can rapidly heat substrates like precision lens molds, along with a dedicated load-lock mechanism, achieves improved throughput.

Application of the basic configuration of a vacuum soldering device with a proven track record. High-speed heat treatment using a heated plate for soldering. Degassing and drying of high-density mounting substrates and printed boards before film formation. Ideal for various applications such as drying ceramic materials. Effective for low-temperature baking of solar cell cells and annealing of thin films, also compatible with inline processes.

A vacuum pump with a proven track record in chemical processes (water-sealed vacuum pump and mechanical booster) has been integrated into a unit. The pump materials and peripheral equipment are optimized according to the process characteristics, gas types, and exhaust volumes of the CVD equipment. The main exhaust pump is a water-sealed vacuum pump with a liquid circulation system, using an alkaline solution for the circulating sealing liquid, achieving both the exhaust and neutralization of chlorine-based gases. This significantly reduces the load on the downstream gas treatment equipment. It is particularly effective in the exhaust system for chlorine-based gases in thermal CVD equipment for surface treatment, and is widely used in the production of tools, molds, and semiconductor jigs. It can also be applied to the exhaust of chlorine-based gases during Si epitaxial growth and etching. The main pump's water-sealed vacuum pump is also made entirely of stainless steel, providing excellent corrosion resistance in a dedicated vacuum exhaust system.

Customizing an annealing device with extensive experience in Si processes for compound semiconductor processes. Capable of high temperatures (900-1000°C) compared to hot plate types for GaAs. Proven results in the alloying of electrodes for nitride semiconductor films. Equipped with a rapid temperature rise and fall heating furnace to control the annealing of electrode films with uniform heating and optimal temperature profiles. A heat treatment device for wafer processes with a proven track record that can propose optimal equipment configurations based on production volume and processes.

Achieved SiC film formation using a PVD method that was not previously available through a newly developed arc filament-type ion plating method. Adopted a new film formation technology that enables the formation of dense SiC films with excellent wear resistance and oxidation resistance at low temperatures below 400°C. The ion plating method, using solid silicon as the starting material, realizes a simple and environmentally friendly clean process with low environmental impact. The new film formation equipment offers high control over film thickness and quality, and excels in exhaust gas treatment, maintenance, installation area, and running costs compared to CVD.

A dedicated annealing device designed for special applications such as epitaxial layers of compound semiconductors and the annealing of polished Si wafers. After high vacuum evacuation, the atmosphere is replaced with hydrogen up to atmospheric pressure, allowing for uniform heating at high temperatures (1000°C) in a high-purity reducing atmosphere.

Forming side electrodes of passive electronic components (resistors, capacitors) of the surface mount type using a dry process. A clean process that does not require waste liquid treatment. An electrode film is formed with strong adhesion only on the end faces of the components. Metal films such as Sn and Ni are formed with high throughput (also compatible with oxide film formation). We contribute to the drying and cost reduction of the production process for small electronic components, as well as stable production, through our proven hardware and unique film formation process.

Achieving a hydrogen-free DLC film (hydrogen content in the film below 1%) that is unprecedented in conventional production equipment. Utilizing a high-density plasma sputtering technology that does not use hydrogen in the film formation process, with a new type of PVD equipment (ADMS = Arc Discharge Magnetron Sputtering Device). The hydrogen-free dense DLC film reduces the sliding characteristics in Mo-added lubricants to less than 1/15 compared to conventional hydrogen-containing DLC films (from 1 to 0.06). The latest film formation process also accommodates the formation of conductive carbon thin films, expanding applications across a wide range of fields from biotechnology to new energy. The low-voltage, low-pressure plasma generated by the newly developed arc discharge magnetron cathode is applied not only for film formation but also for ion nitriding and etching of substrate surfaces, providing high-quality integrated processing from pre-treatment and substrate hardening to coating. The hydrogen-free DLC film (ADMS-CN film) produced by this device (arc discharge magnetron sputtering device) represents a new dry process that goes beyond traditional DLC (hard film formation), significantly broadening the possibilities of plasma surface treatment technology.