ペガサスソフトウェア List of Products and Services

The "Neutral Particle Continuum Module (NMEM)" calculates the flow field of a mixed gas composed of multiple types of atoms and molecules (particles without charge). By solving the fundamental equations of fluid dynamics that take into account the diffusion of each neutral particle component, the flow rate and density of each component are calculated. These fundamental equations are applicable when the gas is considered as a continuum, specifically for Kn (Knudsen number; a dimensionless number that evaluates the rarity of the flow, defined as Kn = mean free path / representative length of the flow) approximately less than Kn < 0.01. 【Features】 ■ The spatial distribution of density and flow rate (flux) is obtained for each type of gas component. ■ Calculations of flow considering compressibility and viscosity can be performed. ■ Coupled calculations with plasma are possible (coupling with PHM or PIC-MCCM). *For more details, please refer to the PDF document or feel free to contact us.

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The "Neutral Particle DSMC Module (DSMCM)" is a module that uses the DSMC method (Discrete Simulation of Macroscopic Systems), which involves placing a large number of sample particles and probabilistically triggering collisions among them according to a physical model to track their behavior. It is designed to analyze the flow fields of rarefied gases within various vacuum devices. It is capable of analyzing the behavior of neutral particles (buffer gas, radical species, sputtering particles) that carry no charge within etching devices, thin film manufacturing equipment, and sputtering devices. Additionally, by specifying a new collision calculation method, it can also analyze viscous flow regions (Kn < 0.01). 【Features】 - In principle, it can analyze flow fields from free molecular flow to gas flow at atmospheric pressure. - Due to computational volume issues, it is effective for applying to low-pressure flow fields. - By specifying a new collision calculation method (U-system), calculations can be performed with cell sizes larger than the mean free path. - By coupling with PIC-MCCM or PHM, the behavior of radical species and sputtering particles can also be calculated rapidly using the test particle Monte Carlo method. *For more details, please refer to the PDF document or feel free to contact us.*

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"RGS3D" is a module that uses the DSMC method (particle model) to analyze the flow field of rarefied gases in various vacuum devices. It excels in analyzing flow fields when the Knudsen number (Kn; a dimensionless number that evaluates the rarefaction of the flow, Kn = mean free path / representative length of the flow) exceeds the application limits of the Navier-Stokes equations, specifically for Kn > 0.01. Additionally, when Kn > 1, a fast Monte Carlo method can be selected. 【Features】 ■ Analyzes the behavior of neutral particles without charge under general rarefied gas conditions ■ Enables analysis of viscous flow regions by specifying a new collision calculation method ■ Capable of analyzing structures of arbitrary shapes and spatial mesh divisions ■ Provides accurate analysis for any mixed gas ■ When collisions with walls are dominant, a fast Monte Carlo method can be selected *For more details, please refer to the PDF document or feel free to contact us.

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The "Static Magnetic Field Analysis Module (MSSM)" is a dedicated 2D static magnetic field analysis module that performs static magnetic field analysis using permanent magnets and magnetic field coils. Since the transfer of magnetic flux density distribution to the plasma analysis module can be done through the same GUI, the operation is simple. Moreover, even if the mesh division of this product differs from that in the plasma analysis, it will automatically interpolate within the plasma analysis module, so there is no need to be concerned about the mesh division in the plasma analysis. 【Features】 ■ Uses the finite element method (FEM) as the analysis technique ■ A dedicated module for 2D (Cartesian coordinates, axisymmetric) allows for fast calculations ■ The transfer of magnetic flux density distribution to the plasma analysis module can be done through the same GUI, making operation easy ■ No need to be concerned about the mesh division in the plasma analysis ■ The shape is easy to solve, requiring less memory and computation time *For more details, please refer to the PDF document or feel free to contact us.

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The "Plasma PIC Monte Carlo Collision Module (PIC-MCCM)" is a module that can analyze the behavior of non-equilibrium low-temperature plasma within devices such as plasma CVD systems, plasma etching systems, sputtering systems, and manufacturing equipment for functional thin films. It specializes in plasma analysis when the plasma density within the device is relatively low (below approximately 10^16 [#/m3]; about 10^10 [#/cc]), and it is also capable of analyzing the behavior of charged particles, such as trajectory analysis of electron beams and ion beams in electromagnetic fields. 【Features】 ■ The physical model is relatively simple. ■ There are few assumptions and approximations in the physical model brought into the simulation. ■ The calculation accuracy is high. ■ Coupling with SMCM allows for coupled simulations that take into account the effects of buffer gas and radical species. *For more details, please refer to the PDF materials or feel free to contact us.

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The "Ion Monte Carlo Simulation Module (IMCSM)" calculates the ion energy distribution and the incident energy/angle distribution at the boundary cell across the entire plasma analysis area. The current PHM calculates the plasma distribution within the device, but in the computational model, the ion energy is assumed to be uniform. However, it is often desired to determine the ion energy at the substrate/target surface. This product uses the calculation results of the PHM (spatial distribution physical quantities) to calculate the ion energy distribution across the entire plasma analysis area as well as at the substrate/target surface. 【Features】 ■ Utilizes the calculation results of the PHM (spatial distribution physical quantities) ■ Calculates the ion energy distribution across the entire plasma analysis area and at the substrate/target surface *For more details, please refer to the PDF document or feel free to contact us.

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The "Dynamic Monte Carlo Simulation Software (SASAMAL)" is a simulation code based on the Monte Carlo method using two-body collision approximation. It calculates the sputtering rate when high-energy ions are incident on an amorphous target, the angular distribution and energy distribution of sputtered atoms, the percentage of backscattering of incident particles, their angular distribution and energy distribution, and the penetration depth of ions into the target (Depth Profile). It can be used to evaluate the ion energy dependence and incident angle dependence of sputtering rates for various materials, as well as to assess the surface modification processes of materials due to ion implantation. 【Features】 ■ Even when used alone, this product can perform calculations related to ion implantation or the sputtering phenomenon itself. ■ When combined with PIC-MCCM or DSMCM, it is possible to investigate the effects of a wide range of device parameters. ■ It can also evaluate the relationship between gas pressure in the device and sputtering rate. *For more details, please refer to the PDF materials or feel free to contact us.

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The "Sputtering Simulation Module (SPUTSM)" refers to the calculation results of the PIC-MCCM (flux, energy, and incident angle of ions incident on the target) and uses SASAMAL to calculate the emission flux, angular distribution, and energy of sputtered particles. It can utilize the data of incident ions calculated by the PIC-MCCM, which incorporates a particle method for plasma analysis, allowing for sputtering analysis with more realistic input data. Additionally, the input method is simple, requiring only the specification of a data folder for easy incorporation. 【Features】 ■ Calculates the emission flux, angular distribution, and energy of sputtered particles ■ Can use the data of incident ions calculated by the PIC-MCCM, which incorporates a particle method for plasma analysis, as input data ■ Enables sputtering analysis with more realistic input data ■ The input method is easy, requiring only the specification of a data folder for incorporation *For more details, please refer to the PDF materials or feel free to contact us.

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The "In-Sheath Monte Carlo Simulation Module (SMCSM)" calculates the energy distribution and angular distribution of ions and electrons that reach the bottom of the sheath (target surface) from the edge of the plasma sheath through the sheath. While both PIC-MCCM and PHM take time to compute, if you only want to evaluate the energy of ions at the target surface, this product can perform calculations quickly using the built-in sheath model. 【Features】 ■ Calculates the ion energy distribution on the substrate/target surface using the calculation results from PHM (such as sheath potential difference). ■ The calculation model is simple, so it does not take much time to compute. ■ By using the built-in sheath model, it is easy to estimate the ion energy distribution (IED) on the substrate in the RF discharge device. ■ By using the calculation results from PHM, the relationship between parameters such as device voltage, gas pressure, etc., and IED can be evaluated. *For more details, please refer to the PDF document or feel free to contact us.

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The "Surface Shape Simulation Module (FPSM2D)" is a module that calculates the temporal changes of the substrate and deposited film by considering various reactions on the substrate surface using the particle Monte Carlo method. It can accommodate any reactions, including PVD, plasma CVD, and etching. The incident particle information (particle flux, incident energy, and angle distribution) can be obtained from the output of the PEGASUS gas phase module and PEGASUS surface science module, or specified by the user using the input methods provided by this product. 【Features】 - Uses the particle Monte Carlo method to express shapes while considering solid layer occupancy and surface coverage through a cell method. - Does not use the sharp interfaces characteristic of the cell method; instead, it determines the incident angle from the gradient of solid layer occupancy and applies it to the angle-dependent specular reflection probability and reaction probability. - There are no limitations on the number of gas species, reaction formulas, complexes, or polymers. - Defined on a two-dimensional orthogonal mesh, but the initial shape can be given as an arbitrary shape. *For more details, please refer to the PDF materials or feel free to contact us.*

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The "Surface Shape Simulation Module (FPSM3D)" is a module that calculates the temporal changes of the substrate and deposited film by considering various reactions on the substrate surface using the particle Monte Carlo method. It does not use the sharp interfaces characteristic of the cell method, but determines the incident angle based on the gradient of the solid layer occupancy, applying it to the angle-dependent specular reflection probability and reaction probability. It can accommodate any type of reaction, including PVD, plasma CVD, and etching. 【Features】 ■ Uses the particle Monte Carlo method to express shapes considering solid layer occupancy and surface coverage through the cell method. ■ There are no restrictions on the number of gas species, reaction equations, complexes, and polymers. ■ Defined on a three-dimensional orthogonal mesh, but the initial shape can be provided as trenches or holes. ■ Incident particle information can be obtained from the output of the PEGASUS gas phase module and PEGASUS surface science module, or specified by the user using the input methods provided by this product. ■ Reaction equations are defined by the user, and the specular reflection probability and reaction probability use functions that depend on the incident angle and incident energy. *For more details, please refer to the PDF materials or feel free to contact us.

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"PEGASUS" is a simulation software for engineers involved in the development and manufacturing using vacuum technology in equipment manufacturers, material manufacturers, and device manufacturers. It consists of multiple modules with different functions, and by combining one or more modules, simulations can be performed according to customer requirements. It targets a wide range of industries and fields, including IT, space development, energy, and semiconductors. Please feel free to contact us if you have any inquiries. 【Features】 ■ Simulation software for engineers involved in the development and manufacturing using vacuum technology in equipment manufacturers, material manufacturers, and device manufacturers. ■ Capable of performing simulations related to many processes required in vacuum thin film technology. ■ Able to conduct simulations from gas phase simulations of equipment sizes to substrate surface simulations at the micron size, among others. *For more details, please download the PDF or feel free to contact us.

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