MiniLab-WCF Ultra High Temperature Wafer Annealing Furnace Max 2000℃_Dedicated for High-Temperature Wafer Sintering (6inch to 8inch)

Max 2000℃ Φ6〜8 inch wafer dedicated high-temperature annealing device, capable of small-scale production multi-atmosphere wafer annealing device.
◾️ Max 2000℃
◾️ Effective heating range: Φ6〜Φ8 inch single wafer type or batch type (multi-stage 5 wafer cassette)
◾️ Heater control: 1 zone or 2 zones (cascade control)
◾️ Heater materials:
・C/C composite: Φ6〜Φ8 inch
・PG coating high-purity graphite: Φ6〜Φ8 inch
◾️ Operating atmosphere:
・Vacuum (1x10-2Pa), inert gas (Ar, N2)
◾️ PLC semi-automatic operation
・Automatic sequence control for vacuum/purge cycle and venting
・Fully automatic operation (optional)
・Touch panel operation, allowing centralized management without dispersed operations.
◾️ Process pressure control
・APC control (MFC flow or automatic opening adjustment valve PID loop control)
・Maximum 3 systems of MFC flow automatic control, or manual adjustment of float meter/needle valve
◾️ PLOT screen graph display, CSV data output


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A multi-atmosphere wafer annealing device capable of accommodating various process environments and small-scale production.
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