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  6. [Hot Stage] Ultra High Temperature Substrate Heating Stage Max 1800℃

[Hot Stage] Ultra High Temperature Substrate Heating Stage Max 1800℃

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last updated:Oct 12, 2024

テルモセラ・ジャパン 本社
テルモセラ・ジャパン 本社
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An ultra-high temperature substrate heating stage that allows for substrate elevation, rotation, and RF/DC substrate bias all in one device! 'All-In-One' component.

Semiconductors, electronic substrates, vacuum thin film process equipment and research and development【Ultra-high temperature substrate heating mechanism】 Compatible substrate sizes: Φ2 to 6 inches Can be used in vacuum (UHV compatible), inert gas, O2, and various process reactive gas atmospheres, etc. (Details to be discussed separately)

    Sputtering Equipment
Hot-Stage_2024-1.png

[Hot Stage] Ultra High Temperature Substrate Heating Stage Max 1800℃

Hot-Stage_2024-1.png
Hot-Stage_2024-1.png 4inch-hot-stage.jpg Air-side-Z-shift-50mm-stroke.jpg 2inch-hot-stage-1000C-with-1KW-bias.jpg Hot-Stage_2024-3.png
  • Thermosera Japan - Hot Stage Listing Page
  • Special site - Product/service details - https://pr.mono.ipros.com/thermocera/product/

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basic information

◉ Compatible with ultra-high vacuum, inert gas atmosphere, and various other process gas atmospheres ◉ Stage vertical movement (substrate or heater elevation, two-stage elevation for substrate & heater) ◉ Substrate rotation ◉ RF (1KW)/DC (800V) bias application (reverse sputtering) ◉ Selection of elements according to the operating environment: Graphite, CC composite, halogen lamp heater, graphite/SiC coating, graphite/PBN coating, PG coating, AlN heater ◉ Various vacuum flange connections: ICF, ISO (KF/LF), JIS (VG/VF) flanges ◉ K, C, R thermocouples included ◉ Other options: temperature control unit, Inc, graphite or SiC substrate holder

Price information

For details, please contact our company. Prices may vary depending on specifications, so feel free to contact us.

Delivery Time

Please contact us for details

※For more details, please contact us.

Applications/Examples of results

【Applications】 CVD/PVD (vacuum deposition/sputtering equipment), various high-temperature annealing applications, etc. 【Examples】 - TCVD, PECVD, sputtering and other film deposition equipment - High-temperature upgrades of existing thin film equipment heating stages, installation of additional mechanisms for up/down, rotation, and bias - Installation on new process evaluation machines and prototype machines

Detailed information

  • 4inch-hot-stage.jpg

    4-inch hot stage max 1200°C with RF bias example

  • 4inch-hot-stage-with-water-cooling.jpg

    4-inch hot stage with water cooling Installation example of 4-inch hot stage with water-cooled housing Max 1200℃ graphite element Inconel wafer holder

  • Air-side-Z-shift-50mm-stroke.jpg

    Atmospheric Side Z-axis Drive Motor Atmospheric Side Z-axis Drive Motor (50mm Stroke Example) RF Bias

  • 2inch-hot-stage-1000C-with-1KW-bias.jpg

    2inch hot stage NiCr element max1000C with bias 2inch hot stage NiCr element max1000C with bias Inconel wafer holder

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News about this product(60)

Product image of ANNEAL wafer annealing equipment.

◆ANNEAL◆ Wafer Annealing Equipment

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Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations at precisely adjusted process gas pressures (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

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Product image of ANNEAL wafer annealing equipment.

Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates

  • Product news

Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)

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High-Temperature Annealing Furnace ◉ Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Experimental Furnace Max 2000℃

  • Product news

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-auto control A higher model of the tabletop Mini-BENCH with semi-auto control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-auto control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Flat heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Ultra-high temperature heating experiments for small samples in the laboratory, as well as various sample heating experiments for new material research and development, can be easily conducted with simple operations. The main unit is compact yet can be used for research and development in various fields.

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◉Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Experimental Furnace Max 2000℃

  • Product news

◉ Maximum operating temperature Max 2000℃ ◉ PLC semi-automatic control A higher model of the tabletop Mini-BENCH with semi-automatic control Automatically controls each process of "vacuum/purge cycle," "gas replacement," and "venting" Maximum operating temperature 2000℃ Semi-automatic control ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace ◉ Effective heating range (crucible dimensions) - Planar heater heating range: Φ2 inch to Φ6 inch - Cylindrical heater heating range: Φ30 to Φ80 x Depth Max 100(H) mm ◉ Up to 3 MFC systems for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensures safety during operation Monitors abnormal cooling water, chamber temperature, and overpressure. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160 mm (*Installed inside rotary pump housing) Various sample heating experiments, such as ultra-high temperature heating of small samples and new material research and development, can be easily performed with simple operations. The main unit is compact yet can be used for research and development in various fields.

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Companynews list (60)

Company information

テルモセラ・ジャパン

テルモセラ・ジャパン 本社

Industrial Electrical Equipment

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【Endless possibility_thermal engineering...】 Our company sells vacuum thin film devices for semiconductor and electronic device fundamental research, ultra-high temperature heaters for CVD substrate heating, experimental furnaces, temperature measurement equipment, and more. To meet the endless demand for "heat," which is indispensable in any era, and to respond to various requests in the field of fundamental technology development, we aim to introduce the latest equipment and contribute to research and development in Japan.

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