[Analysis Case] Metal Contamination Analysis of Si Wafer Surface (B0233)
It is possible to obtain a large amount of metal element information at once through qualitative and semi-quantitative analysis!
We offer metal contamination analysis of Si wafers (B0233). The purpose of metal contamination analysis of Si wafer surfaces using ICP-MS includes not only the contamination assessment of the Si wafer itself but also the evaluation of contamination within semiconductor devices and the assessment of the working environment due to Si wafer exposure. Therefore, the analysis of Si wafer surfaces is conducted for various purposes. ICP-MS analysis allows for the highly sensitive measurement of metal contamination on Si wafer surfaces, and it is also possible to specify the evaluation area according to the purpose. [Measurement Method] ■ [ICP-MS] Inductively Coupled Plasma Mass Spectrometry *For more details, please download the PDF or feel free to contact us.
- Company:一般財団法人材料科学技術振興財団 MST
- Price:Other