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Analytical Equipment Product List and Ranking from 260 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated: Aggregation Period:Oct 14, 2026~Nov 10, 2026
This ranking is based on the number of page views on our site.

Analytical Equipment Manufacturer, Suppliers and Company Rankings

Last Updated: Aggregation Period:Oct 14, 2026~Nov 10, 2026
This ranking is based on the number of page views on our site.

  1. 一般財団法人材料科学技術振興財団 MST Tokyo//Testing, Analysis and Measurement
  2. FOSS JAPAN Co., Ltd. Tokyo//Testing, Analysis and Measurement
  3. サーモフィッシャーサイエンティフィック株式会社/Thermo Fisher Scientific K.K. Tokyo//Testing, Analysis and Measurement
  4. 4 ビーエルテック Tokyo//Testing, Analysis and Measurement
  5. 5 アナリティクイエナジャパン Kanagawa//Testing, Analysis and Measurement

Analytical Equipment Product ranking

Last Updated: Aggregation Period:Oct 14, 2026~Nov 10, 2026
This ranking is based on the number of page views on our site.

  1. ARL iSpark Plus Solid Emission Spectroscopy Analyzer (OES) サーモフィッシャーサイエンティフィック株式会社/Thermo Fisher Scientific K.K.
  2. ICP emission spectrometry device "iCAP PRO series" サーモフィッシャーサイエンティフィック株式会社/Thermo Fisher Scientific K.K.
  3. Sake FT-IR component analysis device "OenoFoss2" FOSS JAPAN Co., Ltd.
  4. 4 Alcohol analysis device for sake Alcolyzer3001 SAKE
  5. 5 Seawater Nutrient Measurement Device Quattro ビーエルテック

Analytical Equipment Product List

781~810 item / All 1253 items

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[Analysis Case] Component Identification of Foreign Substances Considering Thermal History

Proposal for the use of standard samples with aligned thermal history.

Polymeric materials such as polypropylene (PP) react with oxygen and moisture in the atmosphere when heated, causing changes in their molecular structure. Therefore, when foreign substances or contaminants may be present in polymeric materials, it is necessary to use standard materials processed in the same environment as the measurement sample for comparison data. To investigate how the PP standard material changes due to heat treatment (200°C for 30 minutes), FT-IR and TOF-SIMS measurements were conducted.

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[Analysis Case] Heating Degradation Test of Lithium-Ion Secondary Batteries

Samples after thermal degradation can be evaluated using LC/MS/MS, TOF-SIMS, TEM+EDX, etc.

The development of lithium-ion secondary batteries faces challenges such as improving performance, extending lifespan, and enhancing reliability. To address these challenges, it is important to understand the degradation mechanisms of the batteries. In this study, we conducted a heating degradation test to evaluate the degradation mechanisms caused by temperature. After the heating degradation test, we assessed samples that showed significant capacity reduction using LC/MS/MS for the electrolyte, TOF-SIMS for the anode surface, and FIB-TEM+EDX for the cross-section of the anode.

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[Analysis Case] Degradation Component Analysis of Electrolyte in Lithium-Ion Secondary Batteries

Structural estimation of degradation components by LC/MS/MS analysis.

A comparison of the electrolyte of lithium-ion secondary batteries composed of organic solvents and supporting salts containing Li before and after degradation was conducted using LC/MS analysis. As a result, components believed to be reaction products of LiPF6 and the electrolyte were detected. Furthermore, by analyzing characteristic components after degradation using LC/MS/MS, it was possible to estimate the components that are thought to have been generated by the degradation test.

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[Analysis Case] Qualitative Analysis of Organic EL Layer

Suppression of component alteration through measurement surface finishing under atmosphere control.

We conducted qualitative analysis of the components by measuring the surface under controlled conditions, minimizing alterations due to processing, on a commercially available digital audio player equipped with an organic EL display.

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[Analysis Case] Distribution Evaluation of Chitosan by TOF-SIMS

Visualization of pharmaceutical components using TOF-SIMS.

Chitosan is used in a wide range of fields such as medicine, food, cosmetics, and clothing due to its antibacterial and moisturizing properties. Some cotton swabs, which are everyday items, contain chitosan to provide antibacterial effects. Therefore, we evaluated the chitosan contained in cotton swabs using TOF-SIMS, which allows for visualization through mapping and component assessment through spectral measurement.

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[Analysis Case] Depth Direction Analysis of Polyimide Components

Evaluation of the depth direction of surface modification layers of polymers, resins, and films using TOF-SIMS is possible.

Polyimide is a material that is used in various fields, including electronic components, due to its high heat resistance and excellent electrical insulation properties. Since surface modification can enhance adhesion to other materials, it is important to understand the state of the modified layer. In this study, TOF-SIMS measurements were conducted under sputtering conditions that minimize the degradation of organic components, allowing for the evaluation of polyimide components in the depth direction. Using GCIB (Ar cluster) for sputtering enables the measurement of the targeted organic components in the depth direction. *GCIB: Gas Cluster Ion Beam

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[Analysis Case] Investigation of the Causes of Wettability Changes Due to Plasma Treatment

Evaluation of the top surface of modified layers of polymers, resins, and films using TOF-SIMS is possible.

On the surface of cell culture dishes, treatments are performed to convert hydrophobic plastic surfaces to hydrophilic ones in order to enhance cell adhesion. In this study, the surfaces of dishes that underwent hydrophilic treatment were evaluated using XPS and TOF-SIMS, revealing an increase in OH and CHO groups. By conducting quantitative evaluations with XPS and qualitative evaluations with TOF-SIMS, it is possible to capture how the surface has changed.

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[Analysis Case] Quantification of Interstitial Atom Concentration in Silicon Single Crystals

Quantitative analysis of interstitial oxygen and carbon concentration non-destructively using infrared absorption method.

It is possible to non-destructively determine the interstitial oxygen and carbon atom concentrations in silicon single crystals using FT-IR analysis. The concentrations are calculated from the peak heights of the absorption due to interstitial oxygen or carbon in the spectra measured by the transmission method. The calculation method is standardized by the Japan Electronics and Information Technology Industries Association (JEITA). Below are examples of calculated interstitial oxygen atom concentrations.

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[Analysis Case] Evaluation of Film-Forming Component Encroachment on the Back Surface of the Wafer

Quantitative evaluation of metal components is possible near the bevel area.

In semiconductor device manufacturing, it is necessary to remove metals remaining on the backside of the wafer from the perspective of improving yield, and it is important to quantitatively understand the amount of metal components remaining. To investigate the concentration distribution of metals remaining on the backside within a range of 500 µm from the bevel area, we conducted evaluations using TOF-SIMS. TOF-SIMS has the spatial resolution to detect metal components only near the bevel area, and by using standard samples with known concentrations, it is possible to quantitatively calculate the concentrations.

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Analysis Case: Evaluation of Crystallinity in Polymer Materials

It is possible to evaluate the change in crystallinity while increasing the temperature.

Plastic consists of a crystalline portion where polymer chains are arranged in an orderly manner and an amorphous portion where polymer chains are randomly present. The mechanical strength, density, and thermal properties of crystalline plastics are greatly influenced by the degree of crystallinity, making it important to understand this degree. In this study, we investigated the changes in crystallinity of polypropylene films, which are crystalline plastics, by conducting XRD measurements while increasing the temperature.

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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS

It is possible to evaluate the depth distribution of B, Al, N, P, and As in SiC with high sensitivity.

SiC is used as a power device material due to its physical properties, but unlike Si, the diffusion of dopants after thermal treatment following ion implantation is difficult. Therefore, it is necessary to control the distribution in the depth direction through multi-step ion implantation. SIMS analysis can evaluate impurity concentrations in the depth direction with high sensitivity (below ppm), making it suitable for assessing the distribution of dopant elements in SiC. It is also possible to evaluate the distribution of light elements (such as H, C, O, F, etc.). Please contact us regarding any elements you would like to evaluate.

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[Analysis Case] Evaluation of Silicon (Si) Oxide Film State

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

In depth-direction analysis of molecular information obtained by TOF-SIMS, (1) the depth resolution is good, (2) it is possible to distinguish the chemical states of inorganic materials such as oxides, nitrides, fluorides, carbides, alloys, and metals, (3) evaluation of trace states is possible, (4) monitoring of OH is possible, (5) relative comparisons between samples (film thickness, composition) are possible, and (6) image analysis allows for a visual capture of the distribution of states at the surface level of a few nanometers. We will summarize the results of natural oxide films and oxide films. Measurement method: TOF-SIMS Product field: LSI, memory Analysis purpose: evaluation of chemical bonding states, evaluation of composition distribution, thickness of corrosion layers For more details, please download the materials or contact us.

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[Analysis Case] Distribution and State Evaluation of OH on Aluminum (Al) Surface

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

The presence of OH and fluoride on the surface of aluminum electrodes is one of the causes of electrode corrosion, and investigating the state of the aluminum surface is essential for identifying the causes of defects. TOF-SIMS excels in depth resolution at the very surface and can measure depth distribution with high sensitivity while monitoring the state of inorganic substances. By evaluating the depth distribution along with OH, we discovered a phenomenon where OH increased without a change in the thickness of the oxide film. In this way, TOF-SIMS enables the evaluation of depth distribution of molecular information of inorganic substances that cannot be obtained through elemental analysis.

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[Analysis Case] Evaluation of Impurities in Metal Wires

Visualizing the in-plane distribution of impurities such as atmospheric components with a field equivalent to SEM.

SIMS analysis can be applied to various shapes of samples beyond wafers and substrates. In this case study, we will introduce an example of evaluating the distribution of impurities in a wire. The results of evaluating the impurity distribution in the depth direction from the side of the wire (Figure 2) indicate that the impurity profiles of H, O, F, S, and Cl vary in intensity with depth, suggesting that they are localized within the wire. The elemental mapping of the wire cross-section (Figure 3) confirmed the localization of impurities within the wire.

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[Analysis Case] Evaluation of Dopant and Carrier Concentration Distribution in Power Devices

Evaluation of activation rate is possible through composite analysis.

By comparing the impurity concentration distribution obtained from SIMS with the carrier concentration distribution from SRA, not only can we understand the activation state of the dopants, but the presence of unknown impurities and inherent structural issues are also suggested in areas that do not align. Using Profile Viewer, it is possible to overlay and analyze SIMS data and SRA data on your own. As an example, we will introduce a case where SIMS and SRA were performed on a commercially available diode chip, specifically on the central part of the surface and the outer edge (Figure 1) as well as the backside after the package was opened.

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[Analysis Case] SSDP-SIMS Analysis on SiC Substrates

It is possible to obtain the dopant concentration profile from the SiC substrate side.

In the SiC power MOSFET (Figure 1), the concentration distribution of the dopant element Al in the SiC beneath the gate pad was evaluated using SIMS from both the surface side and the backside (Figure 2). Regardless of the direction of analysis, the distribution beyond a depth of approximately 0.5 μm also matches well, suggesting that the spread of the Al concentration distribution reflects the actual elemental distribution rather than being measurement-induced. SSDP-SIMS analysis is possible even on hard substrates like SiC, which are difficult to process. Please feel free to consult us first.

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[Analysis Case] Evaluation of the Cleaning Effect of Organic Ingredients

You can measure the 300mm wafer as it is.

TOF-SIMS has the characteristics of simultaneously evaluating organic and inorganic materials, being capable of analyzing small areas with high sensitivity at the very surface, and allowing evaluation while still in the form of 300mm wafers, making it effective for residue investigations during cleaning processes. We will introduce an analysis case of the removal effect of organic contamination on Si surfaces. TOF-SIMS analysis was conducted on samples where amine-based organic materials were confirmed to be in extremely small quantities by XPS. Even in small areas, it is possible to measure components in such extremely small amounts.

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[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

Capable of evaluating the composition of the main elemental components of GaN-based LEDs in the depth direction.

In general, the quantification of major elements with concentrations exceeding a certain percentage in SIMS is considered to be low. However, by using the M Cs+ (M: element of interest) detection mode with Cs+ as the primary ion, it is possible to determine the compositional distribution of major element elements in the depth direction. An example of depth compositional evaluation for Al, Ga, and In in GaN-based LED structures is presented.

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[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

It is possible to obtain the impurity profile in the GaN-based LED structure from the backside.

In GaN-based LEDs, it is said that the diffusion of the dopant element Mg into the active layer leads to a decrease in luminous efficiency. This document presents a case study where SIMS analysis was conducted on GaN-based LED structural samples from both the surface side and the sapphire substrate side (back side) to evaluate the depth profile of Mg concentration.

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[Analysis Case] Concentration Analysis of Harmful Components in Food

Evaluation of melamine concentration in infant formula milk powder

The large-scale pet food recall incident in 2007 and the melamine-contaminated milk powder incident in 2008 led to the detection of melamine in dairy products, livestock feed, and other foods, prompting nationwide measures to address the issue. MST has established a method for extracting and recovering melamine from food with high precision, and quantifying it using LC/MS/MS analysis. Below are the LC/MS/MS analysis results. We hope this helps alleviate your concerns about food safety.

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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS 2

Measurements will be taken according to the analysis conditions suited to the purpose.

This paper presents examples of evaluating the depth concentration distribution of the dopant elements N, Al, and P in commercially available SiC power MOSFETs using multiple analysis modes. Depending on the analysis objectives, it is possible to measure multiple elements simultaneously without measuring each element separately under optimal conditions. Examples are provided for cases of simultaneous multi-element measurement and measurements focused on each individual element.

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[Analysis Case] Ginseng - LC/MS/MS Analysis of Herbal Components

Simultaneous analysis of six types of ginsenosides (Rb1, Rc, Rd, Re, Rg1, Rg3)

The main component of Korean ginseng, which is widely used as a herbal medicine, is a saponin called ginsenoside. Ginsenosides are classified based on the way sugars are attached, and currently, about 30 types have been discovered. In this case, we will introduce an example of analyzing ginsenosides using LC/MS/MS. With LC/MS/MS, we confirmed that the double filtering effect of MRM allows for the separation of peaks from six structurally similar compounds, enabling simultaneous qualitative and quantitative analysis.

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[Analysis Case] LC/MS/MS Analysis of Non-Specified Antioxidant (TBHQ)

Achieving quantitative analysis of TBHQ in low concentration food with a high recovery rate.

TBHQ (tert-Butylhydroquinone) is a compound used as an antioxidant in foods in countries such as the United States and China. However, in Japan, the import and sale of foods containing TBHQ is not permitted. As a result, imported foods may contain TBHQ, and if detected domestically, measures such as voluntary recalls are taken. This document presents examples of adding 0.1 ppm of TBHQ to various foods and measuring it using LC/MS/MS. In all cases, TBHQ was analyzed with a recovery rate of over 80%. We hope this will help ensure the safety and security of imported foods and raw materials.

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[Analysis Case] Evaluation of Ti Diffusion into IGZO Film

Measurement avoiding the influence of high concentration layers using SSDP-SIMS.

IGZO films are materials that are being researched and developed as TFT materials for displays. There are concerns that the diffusion of metal elements into the IGZO film may degrade the TFT characteristics, so it is necessary to accurately measure the metal concentration within the film for evaluating the device characteristics and reliability using IGZO films. We will introduce a case where the Ti concentration in the IGZO film was evaluated from the opposite side of the metal electrode using SSDP-SIMS.

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[Analysis Case] Analysis of Microscopic Contaminants on Wafer Surface

Composition analysis of 30nm size is possible without processing.

AES analysis is a method for obtaining compositional information from the surface down to a depth of several nanometers, and it is an effective analysis for investigating the composition of contaminants and foreign substances that occur on the surface during the manufacturing process. Since it rarely detects information about the substrate or base material, it allows for a simple examination of only the abnormal areas, such as foreign substances, without preprocessing. Additionally, by conducting surface analysis, it is possible to obtain elemental distribution images. In this case study, we will present data evaluated using AES analysis regarding foreign substances present on a Si wafer.

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[Analysis Case] Fluorescent X-ray Analysis Case of Metal Materials

As a metal composition evaluation, we recommend starting with elemental screening using XRF analysis.

When conducting elemental analysis, it is possible to establish an efficient evaluation plan by first using XRF analysis to non-destructively examine the elements contained in the target before moving on to detailed analysis. In this case, we present data from XRF analysis conducted on blades for metal cutting. By performing surface analysis over a wide range on the order of millimeters, we roughly examined the distribution of metallic elements in the material and estimated the metal composition by calculating the elemental composition from the XRF point analysis results of characteristic areas. Measurement method: XRF Product field: Manufacturing equipment, parts, daily necessities Analysis purpose: Composition evaluation, identification, composition distribution evaluation, failure analysis, defect analysis For more details, please download the materials or contact us.

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[Analysis Case] Quantitative Analysis of Acrylamide in Food

Participating in the FAPAS proficiency test ensures the accuracy of analytical values.

In 2002, it was announced that acrylamide, which may have carcinogenic properties, is generated when foods high in carbohydrates are heated at temperatures above 120°C (Figure 1), attracting attention. According to the Ministry of Agriculture, Forestry and Fisheries (MAFF) website, acrylamide is found in many foods, including fried potato snacks, toast, and coffee. At MST, we participate in the proficiency testing FAPAS and confirm that the absolute value of the z-score is 2 or below (satisfactory), allowing us to accurately quantify acrylamide in food using LC/MS/MS.

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[Analysis Case] LC/MS/MS Analysis of Vitamin Supplements

Simultaneous analysis of five water-soluble vitamins (B1, B2, B6, B12, and niacin).

Water-soluble vitamins can be divided into about 10 types based on their functions in the body. For example, vitamin B1 consists of multiple components (thiamine, hydroxymethylthiazole, and its derivatives) that have the same function, and the total amount of these components determines the content. In this case, a multivitamin supplement was measured using LC/MS/MS, and qualitative analysis was conducted for each component of five types of water-soluble vitamins. By performing simultaneous analysis, it is possible to efficiently confirm the presence or absence of the target components. Analysis of other water-soluble vitamins is also possible, so please feel free to inquire.

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[Analysis Case] Analysis of Smartphone Sealants by Pyrolysis GC/MS

Analysis of UV-curable materials is possible through two-stage heating.

Using a two-stage heating method with thermal decomposition GC/MS, we analyzed the material of the sealing agent around the display of commercially available smartphones. By heating the sample at a low temperature (250°C) and measuring the gas components generated using GC/MS, we can detect residual monomers and low molecular weight additives (polymerization initiators, antioxidants). Subsequently, by heating at a high temperature (550°C), we can decompose the polymers and estimate their constituent components. This revealed that the sealing agent is made of a UV-curable material.

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[Analysis Case] Investigation of Contamination Causes on Silicon Wafers

Evaluation of contamination originating from gloves

In semiconductor device manufacturing, it is necessary to investigate what causes thin deposits that lead to defects in order to examine contamination processes. An analysis was conducted using TOF-SIMS on the deposits for which carbon was detected by EDX and quantified by XPS. When compared to the gloves used for standard samples in each process, similar trends were observed with gloves A and B. Furthermore, verification was performed by adhering the standard sample gloves to silicon wafers. As a result, it was found that they were similar to glove A. Adhering standard samples to silicon wafers for verification is an effective method.

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