Epitaxial-EB deposition device
A high-temperature process of up to 900°C is possible! This product is suitable for single crystal film formation due to the epitaxial promotion mechanism.
The "Epitaxial-EB Deposition Device" is a product suitable for single crystal film formation of metal films and oxide films through an epitaxial promotion mechanism. It achieves excellent film thickness distribution and reproducibility through substrate rotation, and the maintenance of the chamber is easy. It also supports the lift-off process and reduces particles through appropriate surface treatment. Multi-chamber specifications and batch types can also be manufactured. 【Features】 ■ Oxidation-promoting gas introduction mechanism ■ Material oxidation prevention mechanism ■ Capable of high-temperature processes up to 900°C ■ Supports high vacuum processes with a load-lock system ■ Compatible with lift-off processes ■ Supports tray transport *For more details, please refer to the PDF document or feel free to contact us.
- Company:ジャパンクリエイト
- Price:Other