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analysis Product List and Ranking from 179 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated： Aggregation Period:Jan 14, 2026～Feb 10, 2026
This ranking is based on the number of page views on our site.

analysis Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Jan 14, 2026～Feb 10, 2026
This ranking is based on the number of page views on our site.

  1. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  2. ビーエルテック Tokyo//Testing, Analysis and Measurement
  3. 西進商事 Hyogo//Industrial Machinery
  4. 4 同仁グローカル Kumamoto//others
  5. 5 クラスターテクノロジー 本社 Osaka//Resin/Plastic
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Last Updated： Aggregation Period:Jan 14, 2026～Feb 10, 2026
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  1. Certified single-element and mixed standard solutions for ICP-AES/ICP-MS wet analysis. 西進商事
  2. "J106S・J116S" (EP) low linear expansion, low shrinkage rate, composite material クラスターテクノロジー 本社
  3. Simple screening test for residual antibiotics in milk: "Charm DIP Test" フォス･ジャパン
  4. 4 Epoxy resin insulator クラスターテクノロジー 本社
  5. 5 Shaking culture device TVS062CA アドバンテック東洋

analysis Product List

331～360 item / All 641 items

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Analysis of trace metal elements in liquid crystals

Analysis of trace metal elements in liquid crystals

Depending on the panel size, it is possible to analyze using different ICP-AES/MS devices!

We will introduce a case where ICP measurement was conducted using panels before and after reliability testing, along with quantification. The liquid crystal molecules in an LCD are oriented within the panel, and the display is controlled by changes in the orientation state of the liquid crystal due to voltage. When ionic substances, such as metal elements, are present inside the panel, the liquid crystal does not operate correctly, leading to display defects. Ionic substances are known to increase due to contamination during manufacturing or long-term use, making it important to quantify and understand them as part of panel quality. Metal ions can be quantitatively analyzed using ICP analysis, and depending on the differences in pretreatment methods and detection sensitivity, ICP-AES and ICP-MS are used selectively. [Analysis Content] ■ Comparison of metal element content using ICP-AES analysis ■ Comparison of metal element content using ICP-MS analysis *For more details, please refer to the PDF document or feel free to contact us.

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Observation of CMOS image sensor cross-section by mechanical polishing.

Observation of CMOS image sensor cross-section by mechanical polishing.

Due to the advantages and disadvantages, it is necessary to choose according to the sample form, observation range, purpose, etc.!

At our company, we created a cross-section of the CMOS image sensor component associated with VR goggles manufactured by Company A through mechanical polishing while keeping the component in its original state, and we conducted structural observations of the CMOS sensor component. During the observation of the sensor component structure and sensor surface, we removed the glass filter and observed the surface of the CMOS sensor, where it was noted that the arrangement of the color filters was in a configuration known as a Bayer filter. In addition to mechanical polishing, methods for creating cross-sections include processing with ion beams such as FIB and CP, as well as microtome methods. Consultations are free, so please feel free to contact us if you are unsure about the method for creating cross-sections. [Overview] ■ Observation of sensor component structure and sensor surface ■ Cross-section creation by mechanical polishing ■ SEM observation of the sensor chip surface layer *For more details, please download the PDF or feel free to contact us.

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NMR analysis of liquid crystal compounds

NMR analysis of liquid crystal compounds

Introducing the information obtained from NMR, using 1H NMR, 13C NMR, and DEPT measurements as examples!

At Aites Co., Ltd., we conduct "NMR analysis of liquid crystal compounds." NMR is an analytical method that reveals the connections between atoms that make up a molecule, and it is used alongside mass spectrometry and infrared spectroscopy for determining the structure of compounds. In the downloadable materials, we introduce information obtained from NMR using 4-butoxy-4'-cyanobiphenyl (CAS number 52709-87-2) as an example, including 1H NMR, 13C NMR, and DEPT measurements. Please feel free to download and take a look. [Measurement Examples] ■ 1H NMR measurement ■ 13C NMR measurement and DEPT measurement ■ Other NMR measurement techniques *For more details, please download the PDF or feel free to contact us.

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[SSRM] Scanning Spreading Resistance Microscopy

[SSRM] Scanning Spreading Resistance Microscopy

Local resistance measurement at the nanometer level is possible.

SSRM is a method that visualizes the spreading resistance directly beneath the probe by scanning the surface of a sample with applied bias using a conductive probe and measuring the distribution of resistance values in two dimensions. When measuring silicon semiconductor devices, it is sensitive to carrier concentrations of 10^16 cm^-3 or higher, depending on spatial resolution. - Local resistance measurement at the nanometer level is possible - Effective for measuring the dopant concentration distribution in semiconductors - Cannot determine the polarity of semiconductors (p-type/n-type) - Quantitative evaluation is not possible

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[FIB] Focused Ion Beam Processing

[FIB] Focused Ion Beam Processing

FIB refers to a focused ion beam with a diameter ranging from a few nanometers to several hundred nanometers, which can be used to scan the sample surface to etch or deposit material in specific areas.

FIB refers to a focused ion beam with diameters ranging from several nanometers to several hundred nanometers, which can be used to etch specific areas (sputtering) or deposit materials such as carbon (C), tungsten (W), and platinum (Pt) onto specific regions by scanning the sample surface. Additionally, the shape of the processed sample can be recognized through SIM images, which detect secondary electrons generated by irradiating the sample with the ion beam. - Arbitrary shape processing through etching in micro-regions (several nanometers to several tens of micrometers) is possible (typical processing size: around 20 μm) - Sample preparation for SEM, SEM-STEM, and TEM imaging (cross-sections of specific areas can be produced) - Fine pattern deposition and thin film formation (C, W, Pt deposition) are possible in the range of several micrometers to several tens of micrometers - High-resolution SIM (Scanning Ion Microscope) imaging is possible (acceleration voltage 30 kV: 4 nm) - Observation of metal crystal grains (Al, Cu, etc.) is possible with SIM images.

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[Analysis Case] Evaluation of Main Components of Lithium-ion Secondary Battery Electrolyte

[Analysis Case] Evaluation of Main Components of Lithium-ion Secondary Battery Electrolyte

We will dismantle and analyze regardless of the experimental cell.

This is an example of evaluating the organic solvent components of an electrolyte using GC/MS analysis. The measurement of the electrolyte in lithium-ion secondary batteries revealed that the main components of the organic solvents are ethylene carbonate (EC) and propylene carbonate (PC). Other components detected included diethyl carbonate (DEC) and sulfur compounds, with the latter possibly originating from additives.

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[Analysis Case] Evaluation of the Distribution of Hair Care Ingredients in Hair 1

[Analysis Case] Evaluation of the Distribution of Hair Care Ingredients in Hair 1

Visualizing the penetration state of each component into the hair.

We investigated the penetration state of components under various immersion conditions by soaking unconditioned hair, specifically facial hair, in a conditioner or treatment. In the facial hair soaked in conditioner, it was observed that siloxanes penetrated to the hair cortex over time, while high fatty acids appeared to be lost. In the facial hair soaked in treatment, nitrogen-containing organic substances did not penetrate the hair cortex and were only distributed around the cuticle.

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[Analysis Case] Evaluation of Layer Structure of Organic EL Devices

[Analysis Case] Evaluation of Layer Structure of Organic EL Devices

By performing preprocessing under controlled atmosphere conditions, it is possible to analyze while preventing oxidative degradation.

This shows the results of extracting the qualitative spectra of each layer by performing cutting processing of organic EL devices under controlled atmosphere. By conducting the cutting process of the organic EL devices under atmosphere control, we were able to obtain spectra of each layer that are closer to the true state.

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[Analysis Case] Depth Profile Analysis of Impurities in Organic EL Devices Using SIMS

[Analysis Case] Depth Profile Analysis of Impurities in Organic EL Devices Using SIMS

Evaluate organic EL elements with good depth direction resolution.

To extend the lifespan of organic EL devices, it is essential to evaluate the degradation caused by electromigration, making it important to investigate the diffusion state of electrode metal components into the organic layer. However, whether analyzed directly from the cathode side or through the SSDP method from the anode side, the depth resolution decreases, making it difficult to assess the diffusion from the interface into the organic layer. (Note: SSDP method refers to analysis from the backside. For details on the analytical method, see section B0013.) Therefore, by using special processing to expose the cathode/organic layer interface and the organic layer/anode interface, it has become possible to evaluate the organic layer with high depth resolution.

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[Analysis Case] Comprehensive Evaluation of Lithium-Ion Secondary Battery Materials

[Analysis Case] Comprehensive Evaluation of Lithium-Ion Secondary Battery Materials

We will conduct an evaluation that combines various methods to solve the problem.

Lithium-ion secondary batteries have excellent characteristics among secondary batteries and are widely used as power sources for various portable devices. However, there are still various challenges remaining, such as increasing output, capacity, longevity, and reliability. Comprehensive evaluation of battery materials is possible using various analytical methods.

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[Analysis Case] High-Sensitivity Analysis of Light Elements in Semiconductor Substrates Using SIMS

[Analysis Case] High-Sensitivity Analysis of Light Elements in Semiconductor Substrates Using SIMS

SIMS analysis allows for the evaluation of elements such as H, C, N, O, and F down to levels below 1 ppm.

It is possible to detect H, C, N, and O in semiconductor substrates at concentrations below 1 ppm (approximately 5E16 atoms/cm3) and F at concentrations below 1 ppb (approximately 5E13 atoms/cm3) using this method. Examples of measurements in actual FZ-Si (Figure 1) and the background levels of III-V semiconductors are presented (Table 2). In addition to III-V semiconductors, standard samples have been prepared for various materials such as metal films and insulating films, enabling highly sensitive quantitative analysis. This method is ideal for bulk analysis of various materials, including semiconductor substrates, and for evaluating the contamination of gas components during semiconductor processes.

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[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide

[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide

TEM-EELS enables elemental identification and chemical state analysis in micro-regions.

Titanium dioxide (TiO2), used in electronic materials, catalytic materials, ultraviolet absorbers, and photocatalysts, exists in two forms with the same composition but different crystal structures: anatase and rutile. We conducted measurements on a polycrystalline TiO2 sample with a thickness of 20 nm, deposited on a Si substrate (Photo 1), using an electron beam probe focused down to approximately 1 nmΦ (FWHM). The EELS spectra obtained from the sample match the standard spectra of anatase TiO2 for both Ti and O (Figures 1 and 2).

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[Analysis Case] Evaluation of Composition and Impurity Distribution of ZnO Films by SIMS

[Analysis Case] Evaluation of Composition and Impurity Distribution of ZnO Films by SIMS

Visualization of in-plane distribution through imaging SIMS analysis.

The uniformity of the film composition and the distribution of impurities, which are one of the elements in device creation, were evaluated using imaging SIMS analysis. Through data processing after measurement, we can obtain planar images (Figure 1), cross-sectional images (Figure 2), depth distribution profiles at arbitrary locations (Figures 3 and 4), and line profiles. From the distribution of constituent materials and impurities, we can gain information that leads to process and film quality improvements.

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Pre-treatment and measurement under high purity atmosphere.

Pre-treatment and measurement under high purity atmosphere.

XPS: X-ray photoelectron spectroscopy, etc.

By conducting sample pretreatment, transportation, and measurement under a high-purity inert gas atmosphere, it is possible to evaluate while suppressing surface oxidation and moisture adsorption. ■Examples of Application - Semiconductor electrode materials Evaluation of peeling surfaces can be conducted while minimizing the effects of secondary contamination and oxidation. - Organic EL materials Working in an inert gas atmosphere from the moment of opening prevents material degradation. - Battery materials such as Li If processing in a N2 atmosphere is not possible for materials like Li, treatment can be performed in an Ar atmosphere as an alternative.

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Distortion evaluation using SEM equipment

Distortion evaluation using SEM equipment

EBSD: Electron Backscatter Diffraction

Measurements can be performed in bulk state without the need for thinning processes like TEM (NBD: Nano Beam Diffraction). It has the high spatial resolution characteristic of SEM and relatively high strain sensitivity. Additionally, there is a possibility of detecting local lattice strain as tensor data.

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Photoluminescence method

Photoluminescence method

PL：PhotoLuminescence

The photoluminescence method is a technique that involves irradiating a substance with light and observing the light emitted when excited electrons return to their ground state. Various information can be obtained from the resulting emission spectrum. - Samples with a bandgap of about 3.5 eV can be excited. - The mapping function allows for the acquisition of extensive information. - Measurements can be conducted down to approximately 10 K. - Generally, it is a non-destructive measurement that does not require special pretreatment.

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X-ray Absorption Fine Structure (XAFS)

X-ray Absorption Fine Structure (XAFS)

XAFS is a method for analyzing the absorption spectrum obtained by irradiating a substance with X-rays.

- It is possible to evaluate the local structure (interatomic distances, coordination numbers) and chemical state (valence, coordination structure) around the target elements in the sample. - Measurements can be conducted regardless of the environment (high temperature, high pressure, atmosphere). - Measurements can be performed on various sample forms (solid, liquid, gas, thin films, amorphous materials, etc.). - A wide applicable concentration range (from major component elements to trace elements). - Non-destructive measurement. - Depending on the measurement method, it is possible to conduct measurements that are sensitive to the surface as well as bulk measurements.

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[Analysis Case] Evaluation of the Diffusion Layer in Crystalline Si Solar Cells

[Analysis Case] Evaluation of the Diffusion Layer in Crystalline Si Solar Cells

Quantitative evaluation of dopants and evaluation of carrier distribution.

This is an example of quantitatively evaluating the dopant concentration distribution directly beneath the electrode in back contact type crystalline silicon solar cells. Additionally, by evaluating the carrier distribution, it is possible to determine the polarity of p/n and visualize the depletion layer in the cross-sectional direction.

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[Analysis Case] Evaluation of Carrier Distribution in Crystalline Si Solar Cells

[Analysis Case] Evaluation of Carrier Distribution in Crystalline Si Solar Cells

Evaluation of carrier diffusion layer uniformity in samples with surface roughness.

This is an introduction to a case where the carrier diffusion layer distribution of the surface textured part and the back surface field (BSF) part of BSF-type crystalline silicon solar cells was evaluated using SCM. In the textured part, the pn junction is formed along the surface irregularities, while in the BSF part, it can be confirmed that the carrier distribution is interrupted and uneven.

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[Analysis Case] Evaluation of Cleansing Oil's Cleaning Effectiveness

[Analysis Case] Evaluation of Cleansing Oil's Cleaning Effectiveness

Measurement examples of cleaning residues using TOF-SIMS.

The way makeup is removed varies depending on the type of cleansing oil, even with the same washing method. To investigate the cleansing effect, we evaluated the remaining components after washing lipstick with oil using TOF-SIMS. This report introduces a case where the differences in cleansing effects due to the type of cleansing oil were assessed by conducting relative comparisons of the components of the lipstick (such as pigments and oils) between samples.

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[Analysis Case] Evaluation of SiC Power MOSFET Dopants by SIMS

[Analysis Case] Evaluation of SiC Power MOSFET Dopants by SIMS

Imaging SIMS enables the evaluation of localized elements.

We disassembled a commercially available SiC power MOSFET and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant elements Al, N, and P in a 20 µm square area to a depth of 0.5 µm. We will present a case where we extracted the depth profile concentration distribution of Al, N, and P localized within the sample surface from the data processing after the imaging SIMS measurements.

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[Analysis Case] SiC by SIMS

[Analysis Case] SiC by SIMS

Imaging SIMS allows for the evaluation of localized elements.

We disassembled a commercially available SiC Schottky diode and conducted imaging SIMS measurements to evaluate the concentration distribution of the dopant element Al in a 40μm square area to a depth of 0.5μm. From the data processing after the imaging SIMS measurements, we extracted the depth-wise concentration distribution of Al localized within the sample surface and present a case study comparing the concentration distributions for each pattern.

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[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

Analysis is possible after selectively removing the compound layer through preprocessing.

In SIMS analysis of layered structure samples, there is a concern that in structures where the layer of interest is located at a deep position from the sample surface, the depth resolution may degrade due to the influence of the concentration distribution of the upper layers. In such cases, it is effective to remove the upper layers through pretreatment before analysis. This document presents an example of selectively and progressively removing layers from InP/InGaAs-based SHBT (Single Heterojunction Bipolar Transistor) samples.

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[Analysis Case] Evaluation of Liquid Crystal Structure and Micelle Size of Emulsifiers by SAXS

[Analysis Case] Evaluation of Liquid Crystal Structure and Micelle Size of Emulsifiers by SAXS

Capable of structural analysis at the nanoscale and evaluation of nanoparticle size.

Emulsification technology is a fundamental technology in cosmetic development and is utilized across various cosmetics. Changes in the structure of emulsifiers are closely related to the balance of water and oil in the product, the permeability of encapsulated active ingredients, cleansing power, and changes in user experience, making its analysis very important.

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[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

[Analysis Case] Composite Evaluation of the Active Layer of SiC Power MOSFETs

Evaluate the shape of the active layer and the dopant.

We will introduce a case study evaluating the distribution of the diffusion layer in commercially available SiC power MOSFET devices. In the SiC MOSFET manufacturing process, the channel is formed through ion implantation, activation heat treatment, and epitaxial layer formation. During the active layer formation process, we understood the device structure through TEM observation and evaluated the diffusion layer distribution of the p-type/n-type cross-section and the epitaxial layer from SCM measurements, as well as the depth concentration distribution of dopant elements (N, Al, P) from SIMS measurements. Measurement methods: SIMS, SCM, TEM Product field: Power devices Analysis purpose: Trace concentration evaluation, shape evaluation, product investigation For more details, please download the materials or contact us.

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[Analysis Case] Evaluation of H Concentration in IGZO Film

[Analysis Case] Evaluation of H Concentration in IGZO Film

It is possible to evaluate the depth distribution of H in the IGZO film with high sensitivity.

IGZO films are materials that are being researched and developed as TFT materials for displays. The carrier concentration changes according to the hydrogen concentration in the IGZO film, leading to variations in electrical characteristics. Therefore, it is necessary to accurately measure the hydrogen concentration in the film for evaluating the device characteristics and reliability of devices using IGZO films. We will introduce a case study that evaluated the hydrogen concentration in IGZO films under different heating conditions using SIMS.

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[Analysis Case] Electronic Structure and Local Structure Analysis of LIB Cathode Materials

[Analysis Case] Electronic Structure and Local Structure Analysis of LIB Cathode Materials

Evaluation of valence, coordination number, and interatomic distance of cathode materials through XAFS analysis.

In recent years, as hybrid and electric vehicles have been becoming more widespread, there is a growing demand for larger and higher-performance lithium-ion secondary batteries for their power supply. To develop high-capacity positive electrode materials, it is crucial to identify the correlation between composition, structure, and electrochemical properties. By clarifying the electronic states of metal elements and their local structures in positive electrode materials through XAFS analysis using synchrotron radiation, it is possible to gain insights into the correlation between composition, structure, and electrochemical properties.

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[Analysis Case] Simultaneous Analysis of 17 Free Amino Acids

[Analysis Case] Simultaneous Analysis of 17 Free Amino Acids

High-sensitivity and selective amino acid analysis is possible using the OPA post-column method.

The OPA post-column method is a technique that reacts amino acids with the fluorescent reagent OPA after separation in a column and detects the fluorescence (Figures 1, 2). This method allows for high-sensitivity analysis compared to the ninhydrin method. The fluorescent reagent OPA selectively reacts with primary amines, making it less susceptible to interference from contaminants and enabling highly selective analysis. Proline is a secondary amino acid, but it can be converted into a primary amine by adding sodium hypochlorite to the reaction solution, allowing for measurement. This document presents a case study of simultaneous measurement of 17 amino acid components, including proline (Figure 3).

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