一般財団法人材料科学技術振興財団　MST List of Products and Services

AFM is a method that scans the surface of a sample with a fine probe and measures nanoscale surface topography in three dimensions. - It can measure a wide range of samples, from insulators to soft organic materials, including metals, semiconductors, and oxides. - By using tapping mode with low contact pressure, it is possible to minimize sample damage.

SMM scans the measurement sample using a conductive probe to observe its surface topography. Simultaneously, microwaves are irradiated from the probe to the sample, and by measuring the reflected response, it is possible to obtain signals correlated with carrier concentration, particularly in the case of semiconductors. The intensity of the SMM signal is linearly correlated with carrier concentration, which is a characteristic feature that provides high quantitativeness. - For Si devices, sensitivity is present for carrier concentrations around 10^15 to 10^20 cm^-3. - Since signals correlated linearly with carrier concentration can be obtained, quantitative evaluation (semi-quantitative) is possible under certain assumptions. - AFM images can also be acquired. - Various semiconductors such as Si, SiC, GaN, InP, and GaAs can be measured. This document introduces application examples, principles, and data examples. For more details, please download the document or contact us.

SSRM is a method that visualizes the spreading resistance directly beneath the probe by scanning the surface of a sample with applied bias using a conductive probe and measuring the distribution of resistance values in two dimensions. When measuring silicon semiconductor devices, it is sensitive to carrier concentrations of 10^16 cm^-3 or higher, depending on spatial resolution. - Local resistance measurement at the nanometer level is possible - Effective for measuring the dopant concentration distribution in semiconductors - Cannot determine the polarity of semiconductors (p-type/n-type) - Quantitative evaluation is not possible

SCM/SNDM is a method that scans the surface of semiconductors using a conductive probe to visualize the carrier distribution in two dimensions. - SCM is sensitive to carrier concentrations of approximately 10^15 to 10^20 cm^-3, while SNDM is sensitive to concentrations of about 10^14 to 10^20 cm^-3. - It is possible to identify the polarity of the semiconductor (p-type/n-type). - A signal correlated with carrier concentration can be obtained, but quantitative evaluation is not possible. - AFM images can also be acquired.

SRA is a method that involves diagonally polishing the measurement sample, making contact with two probes on the polished surface, and measuring the spreading resistance. It is also referred to as SRP (Spreading Resistance Profiling). - It is possible to determine the conductivity type (p-type/n-type). - It allows for the evaluation of carrier concentration distribution in the depth direction. - It can analyze a wide range of carrier concentrations from approximately 1E12 to 2E20 /cm3. - It is capable of measuring patterned samples larger than approximately 20μm × 100μm. - By combining SRA with SIMS for evaluation, it is possible to assess the activation rate.

- Qualitative information on the magnetic properties of the sample can be obtained. - Imaging of attraction and repulsion due to leakage magnetic fields is possible. - A signal of magnetic force proportional to the magnitude of the gradient of the leakage magnetic field can be obtained, but quantitative evaluation is not possible. - AFM images can also be obtained simultaneously.

Understanding the degradation mechanism of liquid crystal display panels is an essential theme for extending the lifespan of the panels. Among the degradation symptoms, a decrease in brightness can be attributed to various factors, including liquid crystals, alignment films, sealing materials, and TFTs. A comprehensive analysis will be conducted, incorporating surface, structure, composition, and computational science. By capturing the slight differences between good and defective products and conducting a comprehensive evaluation, we can elucidate the degradation mechanism of liquid crystal displays.

This is a thermal analysis method for measuring thermal properties (glass transition, softening temperature, melting temperature, expansion tendency) at localized areas of the sample surface. A probe in contact with the sample surface is heated, causing the temperature of the sample surface to change. In the diagram, 1. the sample expansion begins during heating, 2. the deflection changes until the transition temperature is reached, and 3. the probe's intrusion into the altered sample after the transition temperature is indicated. It is also possible to monitor the deflection during temperature changes and obtain mapping data of the transition temperature for each measurement point.

Polymers can change shape depending on environmental factors such as temperature, humidity, and solvents, and by varying the environmental conditions during evaluation, we can deepen our understanding of their physical properties. In this study, we conducted heating and cooling experiments using polycaprolactone (PCL), which is known for its biodegradability. PCL has a melting point of approximately 60°C, and we continuously observed through video how it changes from a crystalline state to an amorphous state upon heating, and how it recrystallizes upon cooling. Measurement method: AFM Product fields: Biotechnology, Pharmaceuticals, Daily Goods, Food Analysis purpose: Shape evaluation For more details, please download the materials or contact us.

GaN-based high electron mobility transistors, known as GaN HEMTs (High Electron Mobility Transistors), utilize an AlGaN/GaN heterostructure to achieve a two-dimensional electron gas layer (2DEG), resulting in high electron mobility. They are used in applications such as fast chargers, leveraging these characteristics. This document presents the disassembly and evaluation of normally-off GaN HEMT devices. We will introduce a case study that employs a combination of analytical methods to gather comprehensive insights about the samples. Measurement methods: SIMS, TEM, SCM, SMM. Product field: Power devices. Analysis objectives: Trace concentration measurement, shape evaluation, film thickness evaluation, structural evaluation, product investigation. For more details, please download the document or contact us.

Gallium nitride (GaN), a wide bandgap semiconductor, is used in a wide range of fields such as power devices and communication/optical devices. When fabricating devices, the shape and roughness of the wafer surface significantly impact device performance. During the growth of GaN wafers, a step-terrace structure is formed on the surface due to stress effects from lattice mismatch with the supporting substrate. This document introduces a case where the step-terrace structure of the GaN substrate surface was visualized using AFM, and the terrace width, step height, surface roughness, and off-angle were evaluated. Measurement method: AFM Product fields: Power devices, electronic components, lighting Analysis purpose: Shape evaluation, structural evaluation For more details, please download the document or contact us.

- Visualization of attraction and repulsion due to the electric dipole effect of piezoelectric samples is possible. - Quantitative evaluation of the sample's expansion and contraction due to piezoelectric response is a reference value. - AFM images can also be obtained simultaneously.

This method allows for simultaneous measurement of the sample's surface roughness and mechanical property distribution, as well as infrared absorption images (functional group distribution) at selected absorption bands, by conducting measurements in conjunction with the AFM system. AFM-IR has the following features: - It enables evaluation with very high spatial resolution (on the nanoscale), allowing for spectral and imaging measurements in small areas. - Similar analyses can be performed by using the FT-IR library.

Fitting is performed using various computational models on the force curve, which is an AFM measurement technique, to obtain elastic and viscoelastic data. ? Data can be measured in micro-regions that are consistent with DMA testing machines and nanoindenters. ? Applicable to materials with various hardness ranging from 10 kPa to 100 GPa. ? Fitting is possible using elastic models (DMT, Hertz, JKR) and viscoelastic models. ? Elastic modulus and viscoelastic modulus mapping can be performed using the above models. ? Frequency dependence (0.1 to 20 kHz) can be evaluated at each analysis point. ? Measurements can be conducted with temperature changes (room temperature to 250°C).

The probe tip made of SiO2 is coated with Pd, and the probe itself acts as a resistive element. Therefore, when current flows through the probe tip, a temperature rise occurs, and when it comes into contact with the sample surface, the sample absorbs the heat from the probe. To maintain a constant probe temperature, the amount of electricity supplied to the probe is adjusted, and by plotting the changes in the supplied electricity at each measurement point, the thermal conductivity of the measurement locations (for each material) is visualized as a distribution.

Next-generation all-solid-state batteries, which are lithium-ion batteries, are expected to have high safety, high energy density, high output, and a wide operating temperature range. In recent years, research and development aimed at practical application has been actively conducted, but there are various development challenges. At MST, we propose evaluation content suitable for solving development challenges based on comprehensive analysis and evaluation of structure, composition, and electrical properties. This document introduces specific examples of development challenges for all-solid-state batteries, their evaluation content, and representative evaluation methods for each component.

The charge and discharge characteristics of lithium-ion secondary batteries are influenced by electronic conductivity. I will introduce a case where the decreased conductivity of active materials, due to degradation or blockage of conduction paths, was visualized as a resistance value distribution using SSRM. By comparing the results obtained from SSRM with the elemental distribution of Li and other elements measured by TOF-SIMS, it is possible to confirm the correlation between resistance values and elemental distribution. Additionally, it is feasible to classify conductive additives and binders based on resistance values, perform statistical processing, and quantify the mixing degree for each material.

This article introduces a case study evaluating the surface morphology, cross-sectional structure, components, composition, crystal structure, and resistance value distribution of Li(NiCoMn)O2 (NCM), which is used as a positive electrode in lithium-ion secondary batteries. Based on a comprehensive evaluation of structure, composition, and electrical properties, MST proposes assessments suitable for solving development challenges aimed at improving characteristics and enhancing reliability.