一般財団法人材料科学技術振興財団　MST List of Products and Services

EMS is a method that quickly identifies the location of faults by detecting weak light emissions caused by abnormal operation of semiconductor devices. It is also referred to as EMMS, PEM, or EMI. - Only transparent materials can be evaluated in the measurement wavelength range (from the visible to near-infrared region). - It is possible to capture internal defects such as cracks, crystal defects, oxide film breakdown due to ESD, and shorts caused by Al spikes with low damage.

OBIRCH is a method that utilizes the change in resistance caused by the heat generated at defect locations when light is applied, allowing for the identification of abnormal areas. - It can identify the locations of voids and deposits within wiring and vias. - It can identify abnormal contact resistance. - It can identify short circuits in wiring. - It visualizes the DC current path. - It is capable of detecting micro-leaks in gate oxide films.

- The IR-OBIRCH function is also included, allowing for further narrowing down of the fault location after identifying the heat generation area through IR-OBIRCH measurement. - By detecting infrared, it is possible to non-destructively identify fault locations without the need for opening the package through etching or removing electrodes. - By using lock-in signals, it is possible to identify heat generation areas with high S/N, enabling cross-sectional analysis such as Slice & View.

C-SAM is also known as SAT: Scanning Acoustic Tomography. - It is effective for confirming the "bonding state of electrodes" and "adhesion of bonded wafers," which are difficult to verify with X-ray CT observations. - In addition to reflected waves, transmission waves can also be acquired.

- It is possible to evaluate the chemical bonding states focusing on specific elements in the sample (especially light elements such as B, C, N, O). - The spectral shape reflects the partial density of states of the targeted elements in the valence band. - Evaluation of the band structure is also possible through simultaneous measurement with X-ray absorption spectroscopy (XAS). - Since information from the bulk is obtained, it is less affected by the influence of the surface region within a few nanometers. - Evaluation can be performed without being affected by charging effects, even for insulators. - The detection limit is low (<1 atomic%), allowing for the evaluation of trace components.

By irradiating the sample with X-rays, a two-dimensional transmission image of the internal structure of the sample is obtained. Additionally, X-ray CT (Computed Tomography) images are constructed from continuous imaging data obtained by rotating the sample. - Non-destructive, allowing for the examination of the internal structure and defect shapes of the sample. - Capable of constructing 3D images and cross-sectional images at arbitrary locations. - The X-ray energy can be set between 30 kV and 160 kV, making it suitable for a wide range of materials from organic substances to electronic components. - With a dedicated stage, X-ray CT measurements of the sample can be performed under tensile/compressive or cooling/heating conditions. This document introduces application examples, principles, and data examples. For more details, please download the document or contact us.

We provide suitable analysis menus for essential components of EVs, including onboard batteries and devices.

It is also possible to apply voltage to the sample, measure the temperature profile in the chamber, and conduct sampling evaluations during the specified cycle.

- We accommodate tests not only in accordance with standards but also tests tailored to your requests, even if they fall outside the standards. - We have a variety of fixtures for gripping and securing. Additionally, we can also handle the creation of custom fixtures.

We evaluate the effects of vibrations and durability on electronic components, electronic devices, and other products during use or transportation.

We evaluate the impact of shocks that electronic components, electronic devices, and other products experience during use or when dropped, as well as their durability.

1. Temperature and Humidity Cycle Test By repeatedly applying temperature differences between high and low temperatures, the resistance to temperature changes and humidity is evaluated in a short time. 2. Condensation Test Humidity is controlled during high-temperature exposure to evaluate the effects of condensation that occurs due to repeated high-temperature and high-humidity environments.

We evaluate and determine the sealing performance of sealed conditions for hollow structure components and the like.

It is compatible with both leaded and lead-free solder.

Bake, perform moisture absorption pre-treatment to reproduce storage conditions, and after reflow, check for the occurrence of delamination or cracks.

- Temperature gradient control of up to 15°C/min based on sample temperature is possible. - Complies with standard tests JESD22-A104E and IEC60749-25. - Accurate standard testing of sample temperature lamp plate at 15°C/min or below (-40 to 125°C) is possible.

By applying shock or vibration to the sample and detecting the sound generated when tiny foreign objects within the hollow structure collide with the walls, it is possible to prevent issues such as shorts before they occur.

- MM (Machine Model) test: A test that simulates damage caused by the discharge of static electricity accumulated in metals and other materials. - HBM (Human Body Model) test: A test that simulates damage caused by the discharge of static electricity accumulated in the human body. - CDM (Charged Device Model) test: A test that simulates damage caused by the discharge of static electricity occurring when a charged conductor comes into contact with terminals of different potentials. - Latch-up test*: Evaluates the resistance to the phenomenon of latch-up, where excessive current continues to flow in devices with a parasitic thyristor structure. *Corresponds to pulse current injection method and power supply overvoltage method.

Impurities from components of the film formation device, target materials, and plating solutions can contaminate the device and have adverse effects, making the qualitative assessment of impurities on surfaces, within films, and at interfaces important. TOF-SIMS can sensitively evaluate unknown elements present on surfaces, within films, and at interfaces in a single measurement due to the following three characteristics: 1. For metallic elements, ions from m/z 1 to 800 can be detected simultaneously in one measurement. 2. Detection sensitivity of a few ppm can be achieved (varies depending on materials and ions). 3. The use of a sputter gun allows for the evaluation of depth distribution.

In situ X-ray CT measurements allow for internal structure analysis under conditions where a load (tension or compression) is applied to the sample. In this document, in situ X-ray CT measurements were conducted using an aluminum plate as the sample, both in its normal state and in an extended state. We calculated the tensile stress applied to the sample and monitored the internal structural changes under each stress condition. By combining in situ X-ray CT measurements with image analysis technology, it is possible to evaluate under actual usage conditions, which was previously difficult, and assess the impact of stress on the product.