List of CVD Equipment products
- classification：CVD Equipment
1～45 item / All 281 items
For those who have isolators. Achieving high chemical resistance and workability. Low cost and short delivery times are also possible for glove box and isolator gloves.
- Work gloves
Notice of participation in 'INTERPHEX Week Tokyo' from May 20 (Wednesday) to May 22 (Friday), 2026.
Ito Corporation will be exhibiting at "INTERPHEX Week Tokyo" held at Makuhari Messe. This exhibition is the largest in Japan, showcasing a wide range of products and services related to the research and manufacturing of pharmaceuticals, cosmetics, and regenerative medicine from 25 countries and regions around the world. Pharmaceutical and cosmetic manufacturers, as well as regenerative medicine companies, will be attending from all over the globe. We will be showcasing "Gloves for Glove Boxes/Isolators" manufactured by Tron Power. We look forward to your visit.
Chemical reactions caused by dilute gases can also be considered!
- CVD Equipment
- Wafer
- Other semiconductors
Features of "DSMC-Neutrals"!
- Vacuum Equipment
- Vacuum pump
- CVD Equipment
A compact multi-thin film device that incorporates sputtering, deposition, electron beam (EB), and annealing thin film modules in a 60-liter volume chamber, suitable for various applications.
- Sputtering Equipment
- Evaporation Equipment
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Total support for the installation and maintenance of semiconductor manufacturing equipment, from precision equipment installation compatible with clean rooms! Additional information.
- CVD Equipment
- Etching Equipment
- Resist Device
Compact multi-film device that incorporates sputtering, deposition, EB, and annealing thin film modules in a 60L volume chamber, suitable for various applications.
- Sputtering Equipment
- Evaporation Equipment
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Film formation speed up & high adhesion! DLC coating equipment with low introduction costs and maintenance expenses.
- Plasma Generator
- CVD Equipment
- Plasma surface treatment equipment
Achieving excellent film thickness distribution and reproducibility! Multi-chamber specifications and various custom-made options are also available.
- CVD Equipment
Controllable extensive membrane properties! Significant particle reduction and improved productivity.
- CVD Equipment
A porous silicon formation device that further applies conventional anodic oxidation equipment. Porous silicon wafers are formed depending on the chemical solution used and the current density.
- CVD Equipment
Delta Seal (HNV HELICOFLEX(R) DELTA) achieves ultra-high vacuum! [Standardized for JIS V-groove flanges]
- Sealing
- CVD Equipment
- Etching Equipment
[Standardized for JIS V Groove Flange] Low Tightening Pressure Y 'Ultra High Vacuum Delta Seal' for Semiconductor Field
The Delta Seal (HNV HELICOFLEX(R) DELTA) has two delta-shaped protrusions on the contact side of the cross-section. The delta-shaped protrusions are designed to collapse and disappear during the compression of the outer casing when the flange groove is assembled. The design tightening pressure of the Delta Seal is lower compared to the Helicoflex seal, allowing for replacement with elastomer O-rings. Leak rate: *For circular shapes, 10⁻¹² Pa·m³/sec. (10⁻¹¹ atm·cm³/sec.) *Depends on the quality of the installation side. 【Features】 ■Two delta-shaped protrusions on the contact side of the cross-section ■Achieves ultra-high vacuum ■Has excellent elasticity and can be used at high temperatures ■Can be replaced with elastomer O-rings *For more details, please refer to the PDF document or feel free to contact us.
![[For the semiconductor industry] Re...](https://image.mono.ipros.com/public/product/image/884/2000678489/IPROS85630803233748329893.png?w=280&h=280){kind=small}
No need to change the size or number of existing bolts? A must-see for those struggling with "wanting to eliminate gas permeation and gas release from vacuum rubber O-rings" in semiconductor manufactu...
- Sealing
- CVD Equipment
- Electron beam lithography equipment
If you want to eliminate gas permeation and gas release with a vacuum rubber O-ring, replace it with a spring-energized C-ring! 'Delta Beta HNRV'
The Delta Beta HNRV is originally designed with a low tightening pressure (Y) HELICOFLEX Delta seal combined with a specially processed internal spring, achieving replacement of rubber O-rings and improved performance. This metal seal is recommended for those who have concerns such as "wanting to eliminate gas permeation and gas release from rubber O-rings" and "unable to change the number or size of bolts on existing flanges." 【Features】 ■ Mainly for ultra-high vacuum use ■ Even lower design tightening pressure than before ■ Can be exchanged with elastomer O-rings ■ Two delta-shaped protrusions on the contact side of the cross-section It does not guarantee compatibility with existing flanges. Specifications for existing flanges are required. *For more details, please download the PDF or feel free to contact us.
UHP/UHV, ultra-high purity, ultra-high vacuum, advanced metal sealing solutions for ultra-low temperature.
- Sealing
- CVD Equipment
- Etching Equipment
Sales of aluminum frames up to 5800 mm are possible! Additionally, we also accept "assembled products" such as exterior booths! Compatibility with other companies is also available.
- Other assembly machines
- CVD Equipment
- aluminum
Proposed simplifications for harness processing, introduced software for harness inspection, and achieved mass production!
- CVD Equipment
Improvement of gas usage efficiency with a low-capacity chamber! Achievements in providing support for mass production.
- CVD Equipment
Replace with elastomer seals! Introducing our metal seals.
- Sealing
- CVD Equipment
- Semiconductor inspection/test equipment
Involved in the manufacturing of both development and mass production machines, achieving manufacturing and mass production in a short period!
- CVD Equipment
"Replace rubber O-ring to metal seal, Eliminate gas permeation and gas release." This can be possible with Delta Beta HNRV.
- Sealing
- CVD Equipment
If you want to eliminate gas permeation and gas release with a vacuum rubber O-ring, replace it with a spring-energized C-ring! 'Delta Beta HNRV'
The Delta Beta HNRV is originally designed with a low tightening pressure (Y) HELICOFLEX Delta seal combined with a specially processed internal spring, achieving replacement of rubber O-rings and improved performance. This metal seal is recommended for those who have concerns such as "wanting to eliminate gas permeation and gas release from rubber O-rings" and "unable to change the number or size of bolts on existing flanges." 【Features】 ■ Mainly for ultra-high vacuum use ■ Even lower design tightening pressure than before ■ Can be exchanged with elastomer O-rings ■ Two delta-shaped protrusions on the contact side of the cross-section It does not guarantee compatibility with existing flanges. Specifications for existing flanges are required. *For more details, please download the PDF or feel free to contact us.
Cost reduction with functional aluminum frames and a wide range of accessories [Available not only as individual items but also as "assembled products" in flat or three-dimensional configurations!]
- Other assembly machines
- CVD Equipment
We relentlessly pursue customer satisfaction and technical expertise, contributing to society. We have extensive experience in contract manufacturing for OEMs and prototype machines.
- CVD Equipment
- Wafer processing/polishing equipment
- Other semiconductor manufacturing equipment
Small quantities and wide varieties. NSG(SiO2)/PSG/BPSG deposition. Single-wafer processing atmospheric pressure CVD (APCVD) system (Compatible with 8-inch SiC wafers)
- CVD Equipment
For mass production of crystalline Si solar cells/For NSG(SiO2)/PSG/BSG deposition High productivity/Continuous atmospheric pressure CVD (APCVD) system
- CVD Equipment
For prototyping, development, and small lot production For deposition of NSG(SiO2)/BSG/PSG/BPSG Batch processing (simultaneous processing of multiple substrates) APCVD system
- CVD Equipment
A film deposition platform for semiconductor wafers and advanced packaging capable of various film deposition treatments.
- Sputtering Equipment
- Etching Equipment
- CVD Equipment
Meeting the high cleanliness standards required in the semiconductor and medical device fields. We carry out everything from precision cleaning to packaging and assembly in a consistent clean environm...
- CVD Equipment
- Sputtering Equipment
- Resist Device
We have a track record of equipment such as 'plasma CVD systems for metal containers' and 'ICP-type MOCVD systems'!
- CVD Equipment
Coating is possible up to a 3L container! It contributes to reducing logistics costs through lightweight containers.
- CVD Equipment
A simple structure with high versatility! It adopts a unique plasma control method.
- CVD Equipment
The compatible film types are DLC, amorphous SiC, etc.! Equipped with a substrate heating mechanism (maximum set temperature: 500°C).
- Plasma Generator
- CVD Equipment
4.5 generation glass substrate deposition system for rigid/flexible devices such as FPD.
- CVD Equipment
Mass production / NSG(SiO2)/PSG/BPSG deposition High-productivity / Continuous atmospheric pressure CVD (APCVD) system (for 12-inch wafers)
- CVD Equipment
Mass Production / NSG(SiO2)/PSG/BPSG deposition High-productivity/Continuous atmospheric pressure CVD (APCVD) system (for up to 8-inch wafers)
- CVD Equipment
It is an engineering plastic that boasts excellent heat resistance, low water absorption rate, and outstanding sliding properties.
- CVD Equipment
- valve
- plastic
There is a track record of growing nitride semiconductor crystals on various semiconductor substrates. Customization is also possible according to your requests.
- CVD Equipment
- LED Module
- Wafer
Explaining the benefits of aerogel products that can be used in high-temperature environments!
- CVD Equipment
◉ Short time: Easily conduct graphene synthesis experiments in just 30 minutes per batch. ◉ High-precision temperature and pressure control. ◉ Sophisticated software.
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
CVD, PVD (evaporation, sputtering, etc.) high vacuum, ultra-high temperature plate heater for wafer and small chip heating with excellent uniformity and reproducibility.
- Other semiconductor manufacturing equipment
- Annealing furnace
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Plasma CVD equipment compatible with wafer sizes of Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities.
- CVD Equipment
★☆★☆【MiniLab-026】Small Thin Film Experimental Device for R&D Development★☆★☆
This is a flexible thin film experimental device for R&D that eliminates waste by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug & Play feel, achieving compact size, space-saving design, simple operation, and high cost performance. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. There is also a glove box storage type available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many more options available. *Please first contact us with your required specifications, and we will configure the system to meet your needs.
![[Nanofurnace] BWS-NANO Thermal CVD ...](https://image.mono.ipros.com/public/product/image/0d0/2000191194/IPROS99314670218218380543.jpeg?w=280&h=280){kind=small}
Hot Wall Type Thermal CVD Equipment: A compact, high-performance CVD device ideal for fundamental research.
- CVD Equipment
- Annealing furnace
- Heating device
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.