GP200 Series for Semiconductor Film Deposition
Achieving stabilization of the film formation process and improvement of yield with pressure-based MFC.
In the film deposition process of semiconductor manufacturing, even slight variations in gas flow can have a significant impact on film thickness and quality. Particularly in CVD, PVD, and ALD processes, high-precision and highly reproducible flow control is a crucial factor that influences device performance and yield. The GP200 series achieves high-precision flow measurement and excellent reproducibility through differential pressure sensors and optimized control valve design. It supports stable process control and contributes to the formation of high-quality thin films. 【Application Scenarios】 - CVD (Chemical Vapor Deposition) process - PVD (Physical Vapor Deposition) process - ALD (Atomic Layer Deposition) process 【Benefits of Implementation】 - Improved film thickness uniformity - Enhanced composition control accuracy - Yield improvement through process stabilization - Increased reproducibility of gas supply
- Company:ITWジャパン
- Price:Other