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MOSFET(抵抗) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Jan 14, 2026～Feb 10, 2026
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MOSFET Product List

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『CSD22206W』

『CSD22206W』

8V, 4.7mΩ, P-channel NexFET power MOSFET 'CSD22206W'

This -8V, 4.7mΩ, 1.5mm×1.5mm device is designed to achieve the lowest possible on-resistance and gate charge in the smallest possible footprint, while also providing excellent thermal characteristics in a very low profile. With its low on-resistance, small footprint, and low profile, this device is ideal for battery-powered applications with volume constraints. 【Features】 ■ Extremely low resistance ■ Small footprint of 1.5mm×1.5mm ■ Lead-free ■ Gate ESD protection ■ RoHS compliant *For more details, please contact us.

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[Information] Shirutoku Report No. 99 #About SiC MOSFETs

[Information] Shirutoku Report No. 99 #About SiC MOSFETs

The performance of MOSFETs is compared using a performance index called FoM! Measurement conditions vary by manufacturer.

★★Shirutoku Report: Useful Information You Should Know★★ SiC MOSFETs have the characteristic of high voltage resistance compared to Si, while also having low resistance. Leveraging this feature, many products are seen replacing high-voltage IGBTs with SiC MOSFETs. This time, I would like to talk about MOSFETs. If you want to know about SiC diodes, please refer to Shirutoku Report No. 12. 【Contents】 ■Comparison examples of Si-MOSFET, IGBT, and SiC-MOSFET ■Do not compare only based on ON resistance ■When replacing with SiC, be careful to change the drive voltage as well *For more details, please refer to the PDF document or feel free to contact us.

  • diode
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MOSFET　SupIR SMD-2

MOSFET　SupIR SMD-2

Reduce the risk of package cracking due to thermal expansion and contraction caused by temperature application after substrate mounting.

We offer a diverse range of discrete products in various package types for defense, aerospace, and space applications. Features of SupIR SMD-2 ■ Compact and lightweight ■ Temperature resistance reduced by 0.25℃ / W (compared to carrier SMD-2) *Please refer to the image ■ Reduced package resistance ■ Reduced parasitic inductance ■ Higher current rating for ID *For more details, please refer to the catalog or feel free to contact us.

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Power Semiconductor 2000V N-Channel Power MOSFET

Power Semiconductor 2000V N-Channel Power MOSFET

High voltage power conversion system! Suitable for various power exchange systems.

The 2000V N-channel power MOSFET is a high-voltage power MOSFET for high-voltage power conversion systems. It eliminates the need for series connections of low-voltage devices, allowing for parallel operation due to its positive temperature coefficient of on-resistance, enabling the construction of cost-effective power systems. Other advantages include a reduction in the number of components that make up the gate drive circuit due to fewer devices used, leading to cost reduction, improved reliability through simpler designs, and saving PCB space, contributing to miniaturization. 【Features】 ○ High blocking voltage ○ Unique high-voltage package ○ Increased creepage distance between terminals ○ Positive temperature coefficient of on-resistance ○ Space-saving (reducing multiple series connections of devices) For more details, please contact us or download the catalog.

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SiC MOSFET『FMG50AQ120N6』

SiC MOSFET『FMG50AQ120N6』

Achieves low RDS(on) to maximize the effective use of package space.

The "FMG50AQ120N6" is a SiC MOSFET in a TO-247-4L package (insulated). It achieves reduced wiring resistance and strong bonding through double-sided solder bonding. It has a built-in freewheeling diode (FWD) function, providing high noise resistance. It is suitable for industrial inverters, uninterruptible power supplies (UPS), and various switching power supplies. Please feel free to contact us if you have any inquiries. 【Features】 ■ Compact and highly reliable ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

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ICE32S60FP 32A,600V POWER MOSFET

ICE32S60FP 32A,600V POWER MOSFET

GEN2 Series 32A, 600V achieves a low on-resistance of less than 0.1 ohm in a full package.

The ICE32S60FP from Ice Moss Technology is a TO220 Full Pak package rated for 32A and 600V. It has a low Qg, contributing to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt tolerance ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance

  • Transistor
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200V Ultra Junction X4 Class MOSFET

200V Ultra Junction X4 Class MOSFET

Heat design is simplified, allowing for higher efficiency.

The "200V Ultra Junction X4 Class MOSFET" is a low RDS(on) MOSFET suitable for high-efficiency applications. This product is available in TO-220, TO-247-3L, TO-263, and TO-268HV packages, with a nominal rated current of 60 to 220A. Please feel free to contact us if you have any requests. 【Benefits】 ■ Reduced conduction loss due to low on-resistance RDS(on) ■ Simplified thermal design due to low thermal resistance RthJC ■ High surge tolerance provided by high avalanche energy capacity EAS ■ Reduced gate driver requirements due to decreased gate charge Qg *For more details, please download the PDF or feel free to contact us.

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General-purpose N-channel MOSFET "XP23/XP26 Series"

General-purpose N-channel MOSFET "XP23/XP26 Series"

Built-in gate protection diode for electrostatic discharge protection! MOSFET compliant with EU RoHS directive.

The "XP23/XP26 Series" is a general-purpose N-channel MOSFET that achieves low on-resistance and high-speed switching characteristics. It can be used in various applications such as relay circuits and switching circuits. As an electrostatic countermeasure, it has a built-in gate protection diode. The package adopts a compact SOT-23 (TO-236) (2.9 X 2.4 X h1.15mm), contributing to the miniaturization of equipment. 【Features】 ■ Built-in gate protection diode ■ Low on-resistance ■ High-speed switching *For more details, please refer to the PDF document or feel free to contact us.

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Sansa Electric Manufacturing Co., Ltd. SiC POWER MOSFET

Sansa Electric Manufacturing Co., Ltd. SiC POWER MOSFET

FMG50AQ170N6

The "SiC MOSFET (TO-247-4L)" manufactured by SanSha Electric Co., Ltd. is an industrial power semiconductor that incorporates a built-in freewheeling diode (FWD) function. It supports high current density. By reducing wiring resistance and achieving a strong bond through a unique terminal structure, it harnesses the performance of SiC chips that reach over four times the current density compared to conventional products. Additionally, it maximizes the effective use of package space, resulting in low RDS(on). 【Features】 ■ Suitable package that achieves an insulated structure and high heat dissipation ■ No external FWD required ■ High short-circuit withstand capability ■ Low on-resistance at high temperatures ■ High noise resistance *For more details, please download the PDF or feel free to contact us.

  • SiC MOSFET 画像2.png
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700V Silicon Carbide MOSFET 'MSC015SMA070'

700V Silicon Carbide MOSFET 'MSC015SMA070'

Low capacitance and low gate charge! High-speed and reliable body diode.

We would like to introduce our 700V Silicon Carbide (SiC) MOSFET, the 'MSC015SMA070'. It features low capacitance and low gate charge, along with a low internal gate resistance (ESR) that enables high-speed switching. It operates stably at a junction temperature TJ(max) = 175℃ and is equipped with a highly reliable body diode and excellent avalanche resistance. Please feel free to contact us if you have any inquiries. 【Features】 ■ Low capacitance and low gate charge ■ High-speed switching due to low internal gate resistance (ESR) ■ Stable operation at high junction temperature, TJ(max) = 175℃ ■ High-speed and reliable body diode ■ Package: D3PAK, TO-247, TO-247-4L, die ■ RoHS compliant *You can download the English version of the catalog. *For more details, please feel free to contact us.

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ICE20N60　20A, 600V POWER MOSFET

ICE20N60　20A, 600V POWER MOSFET

★In stock! Same-day shipping available! This power MOSFET contributes to power management energy saving and has a proven track record with power supply manufacturers.

The ICE20N60 from IceMOS Technology is a TO220 package rated for 20A and 600V. 【Features】 ■ TO220 package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

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ICE11N70FP 11A,700V POWER MOSFET

ICE11N70FP 11A,700V POWER MOSFET

★Please inquire about stock. This is a power MOSFET that contributes to power management and energy saving, with a proven track record in power supply manufacturers.

The ICE11N70FP from IceMOS Technology is a TO220 FullPak package rated for 11A and 700V. 【Features】 ■ TO220 FullPak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

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ICE10N60FP 10A,600V POWER MOSFET

ICE10N60FP 10A,600V POWER MOSFET

★Please inquire about stock! This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE10N60FP from IceMOS Technology is a TO220 Full Pak package rated for 10A and 600V. 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced transconductance performance

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ICE15N73FP 15A,730V POWER MOSFET

ICE15N73FP 15A,730V POWER MOSFET

★Please inquire about stock. This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE15N73FP from IceMOS Technology is a TO220 FullPak package rated at 15A, 730V. 【Features】 ■ TO220 FullPak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

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『CSD18541F5』

『CSD18541F5』

60-V N Channel FemtoFET MOSFET 'CSD18541F5'

The 54mΩ, 60V N-channel FemtoFET MOSFET technology 'CSD18541F5' is designed and optimized for many industrial load switch applications with space constraints, minimizing the footprint. By replacing standard small signal MOSFETs with this technology, the footprint size can be significantly reduced. 【Features】 ■ Low on-resistance ■ Extremely low Qg and Qgd ■ Ultra-small footprint: 1.53mm × 0.77mm ■ Low profile: height 0.35mm ■ RoHS compliant *For more details, please contact us.

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ICE22N60B 22A,600V POWER MOSFET

ICE22N60B 22A,600V POWER MOSFET

★Please inquire about stock. This is a power MOSFET that contributes to power management energy saving, with a proven track record in power supply manufacturers.

The ICE22N60B from Ice Moss Technology is a 22A, 600V TO-263 (D2PAK) package. 【Features】 ■ TO263-2L (D2PAK) package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced mutual conductance performance

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High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

High-capacity power supply with SiC MOSFET【Toshiba Device & Storage】

Ideal for industrial equipment at 1200V! Achieves high-speed switching and low on-resistance, significantly reducing power loss and contributing to equipment miniaturization!

Introducing Toshiba Device & Storage's 1200V SiC MOSFET for industrial equipment and high-capacity power applications. This product adopts Toshiba's second-generation chip design, which enhances the reliability of SiC MOSFETs. The gate threshold voltage is set high at 4.2V to 5.8V, reducing the risk of malfunction (false arcing). Additionally, it incorporates a low forward voltage SiC Schottky Barrier Diode (SBD), which also reduces power loss. 【Application Devices】 ■ High-output, high-efficiency large-capacity AC-DC converters for industrial equipment ■ Solar inverters ■ Large-capacity bidirectional DC-DC converters such as UPS *For more details, please download the PDF or contact us.

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ICE25S65FP 25A,650V POWER MOSFET

ICE25S65FP 25A,650V POWER MOSFET

GEN2 Series 25A, 650V TO220 FullPak Package

The ICE25S65FP from IceMOS Technology is a TO220 Full Pak package rated for 25A and 650V. It has low Qg, contributing to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance

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ICE20N60FP 20A,600V Power MOSFET

ICE20N60FP 20A,600V Power MOSFET

★In stock! Same-day shipping available! This power MOSFET contributes to power management energy savings and has a proven track record with power supply manufacturers.

The ICE20N60FP from Ice Moss Technology is a full-pack device rated for 20A and 600V. 【Features】 ■ TO220 Fullpak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance * For more details, please refer to the PDF document or feel free to contact us. * An English version of the catalog is available for download.

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