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MOSFET(抵抗) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Aug 20, 2025～Sep 16, 2025
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MOSFET Product List

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『CSD22206W』

『CSD22206W』

8V, 4.7mΩ, P-channel NexFET power MOSFET 'CSD22206W'

This -8V, 4.7mΩ, 1.5mm×1.5mm device is designed to achieve the lowest possible on-resistance and gate charge in the smallest possible footprint, while also providing excellent thermal characteristics in a very low profile. With its low on-resistance, small footprint, and low profile, this device is ideal for battery-powered applications with volume constraints. 【Features】 ■ Extremely low resistance ■ Small footprint of 1.5mm×1.5mm ■ Lead-free ■ Gate ESD protection ■ RoHS compliant *For more details, please contact us.

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MOS FET Single N-Channel (ELM43400CB)

MOS FET Single N-Channel (ELM43400CB)

[Recommended] This is a high-current MOSFET with characteristics of low input capacity, low voltage operation, and low ON resistance.

The single power MOSFET series is a high-current MOSFET with characteristics of low input capacitance, low voltage drive, and low ON resistance. The single N-channel ELM43400CB is a high-current MOSFET with the same characteristics of low input capacitance, low voltage drive, and low ON resistance. Some products are ESD resistant due to protective circuits. Please check our website for more information. *For more details on the 43400CB, please refer to the catalog or feel free to contact us.

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MOS FET Single P-Channel (ELM43401CA)

MOS FET Single P-Channel (ELM43401CA)

[Recommended] This is a high-current MOSFET with characteristics of low input capacitance, low voltage drive, and low ON resistance.

The single power MOSFET series is a high-current MOSFET with characteristics of low input capacitance, low voltage drive, and low ON resistance. The single P-channel ELM43401CA is a high-current MOSFET with the same characteristics of low input capacitance, low voltage drive, and low ON resistance. Some products are ESD resistant due to protective circuits. Please check our website. *For more details on the 43401CA, please refer to the catalog or feel free to contact us.

  • Transistor

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[Data] Shirutoku Report No. 53 #Avalanche Test (2)

[Data] Shirutoku Report No. 53 #Avalanche Test (2)

Explaining the transient thermal resistance of devices using diagrams! Calculations will be performed using a MOSFET with appropriate parameters as an example.

★★Shirutoku Report: Useful Information You Should Know★★ This report is a continuation of the avalanche rating test of MOSFETs discussed in Shirutoku Report No. 52. We will explain the relationship between the device's transient thermal resistance and the losses and time during avalanche operation using diagrams and graphs. When selecting a device, comparing devices measured under different conditions is not very meaningful. It is recommended to measure in an environment as close to actual operation as possible, rather than relying solely on data sheet values. 【Contents】 ■ Transient thermal resistance of the device ■ Relationship between losses and time during avalanche operation ■ Graph of Tj and time *For more details, please refer to the PDF document or feel free to contact us.

  • Other measurement, recording and measuring instruments
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[Information] Shirutoku Report No. 99 #About SiC MOSFETs

[Information] Shirutoku Report No. 99 #About SiC MOSFETs

The performance of MOSFETs is compared using a performance index called FoM! Measurement conditions vary by manufacturer.

★★Shirutoku Report: Useful Information You Should Know★★ SiC MOSFETs have the characteristic of high voltage resistance compared to Si, while also having low resistance. Leveraging this feature, many products are seen replacing high-voltage IGBTs with SiC MOSFETs. This time, I would like to talk about MOSFETs. If you want to know about SiC diodes, please refer to Shirutoku Report No. 12. 【Contents】 ■Comparison examples of Si-MOSFET, IGBT, and SiC-MOSFET ■Do not compare only based on ON resistance ■When replacing with SiC, be careful to change the drive voltage as well *For more details, please refer to the PDF document or feel free to contact us.

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MOSFET　SupIR SMD-2

MOSFET　SupIR SMD-2

Reduce the risk of package cracking due to thermal expansion and contraction caused by temperature application after substrate mounting.

We offer a diverse range of discrete products in various package types for defense, aerospace, and space applications. Features of SupIR SMD-2 ■ Compact and lightweight ■ Temperature resistance reduced by 0.25℃ / W (compared to carrier SMD-2) *Please refer to the image ■ Reduced package resistance ■ Reduced parasitic inductance ■ Higher current rating for ID *For more details, please refer to the catalog or feel free to contact us.

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Power Semiconductor 2000V N-Channel Power MOSFET

Power Semiconductor 2000V N-Channel Power MOSFET

High voltage power conversion system! Suitable for various power exchange systems.

The 2000V N-channel power MOSFET is a high-voltage power MOSFET for high-voltage power conversion systems. It eliminates the need for series connections of low-voltage devices, allowing for parallel operation due to its positive temperature coefficient of on-resistance, enabling the construction of cost-effective power systems. Other advantages include a reduction in the number of components that make up the gate drive circuit due to fewer devices used, leading to cost reduction, improved reliability through simpler designs, and saving PCB space, contributing to miniaturization. 【Features】 ○ High blocking voltage ○ Unique high-voltage package ○ Increased creepage distance between terminals ○ Positive temperature coefficient of on-resistance ○ Space-saving (reducing multiple series connections of devices) For more details, please contact us or download the catalog.

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ICE32S60FP 32A,600V POWER MOSFET

ICE32S60FP 32A,600V POWER MOSFET

GEN2 Series 32A, 600V achieves a low on-resistance of less than 0.1 ohm in a full package.

The ICE32S60FP from Ice Moss Technology is a TO220 Full Pak package rated for 32A and 600V. It has a low Qg, contributing to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt tolerance ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance

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200V Ultra Junction X4 Class MOSFET

200V Ultra Junction X4 Class MOSFET

Heat design is simplified, allowing for higher efficiency.

The "200V Ultra Junction X4 Class MOSFET" is a low RDS(on) MOSFET suitable for high-efficiency applications. This product is available in TO-220, TO-247-3L, TO-263, and TO-268HV packages, with a nominal rated current of 60 to 220A. Please feel free to contact us if you have any requests. 【Benefits】 ■ Reduced conduction loss due to low on-resistance RDS(on) ■ Simplified thermal design due to low thermal resistance RthJC ■ High surge tolerance provided by high avalanche energy capacity EAS ■ Reduced gate driver requirements due to decreased gate charge Qg *For more details, please download the PDF or feel free to contact us.

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General-purpose N-channel MOSFET "XP23/XP26 Series"

General-purpose N-channel MOSFET "XP23/XP26 Series"

Built-in gate protection diode for electrostatic discharge protection! MOSFET compliant with EU RoHS directive.

The "XP23/XP26 Series" is a general-purpose N-channel MOSFET that achieves low on-resistance and high-speed switching characteristics. It can be used in various applications such as relay circuits and switching circuits. As an electrostatic countermeasure, it has a built-in gate protection diode. The package adopts a compact SOT-23 (TO-236) (2.9 X 2.4 X h1.15mm), contributing to the miniaturization of equipment. 【Features】 ■ Built-in gate protection diode ■ Low on-resistance ■ High-speed switching *For more details, please refer to the PDF document or feel free to contact us.

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