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microscope Product List and Ranking from 41 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Sep 17, 2025～Oct 14, 2025
This ranking is based on the number of page views on our site.

microscope Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Sep 17, 2025～Oct 14, 2025
This ranking is based on the number of page views on our site.

  1. null/null
  2. フローベル Kanagawa//Optical Instruments
  3. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  4. 4 サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K. Tokyo//Testing, Analysis and Measurement
  5. 5 アズサイエンス 松本本社 Nagano//Trading company/Wholesale
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microscope Product ranking

Last Updated： Aggregation Period:Sep 17, 2025～Oct 14, 2025
This ranking is based on the number of page views on our site.

  1. White interference microscope equipped with laser microscope 'VK-X3000'
  2. Bilateral Microscope System "TOMOS Series" フローベル
  3. All-in-one fluorescence microscope 'BZ-X1000 Series'
  4. 4 All-in-one fluorescence microscope 'BZ-X800'
  5. 5 White interference microscope equipped with laser VK-X3000

microscope Product List

106～120 item / All 647 items

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Optical microscope transmission phase-shift laser interference microscope

Optical microscope transmission phase-shift laser interference microscope

Optical microscope transmission phase-shifting laser interference microscope

This is a new type of microscope positioned above conventional optical microscopes, capable of measuring refractive index distribution and thickness structure quickly and quantitatively, and visualizing it in three dimensions. 【Features】 ○ By applying laser interference methods, it can non-contact measure the refractive index and height of samples. ○ High speed… measurement time is a few seconds ○ High precision… phase measurement accuracy ±(1/150) λ, refractive index difference measurement accuracy ±0.0001, height measurement accuracy ±0.2μm ○ Spatial resolution… equivalent to optical microscopes ● For more details, please contact us or download the catalog.

  • Optical microscope

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(S)TEM (Scanning Transmission Electron Microscopy)

(S)TEM (Scanning Transmission Electron Microscopy)

Elemental analysis, state evaluation, particle size analysis, and acquisition of three-dimensional structural images at the nanoscale.

TEM (Transmission Electron Microscopy) is a method that involves irradiating a thin sample with an electron beam, imaging the electrons that have passed through or scattered from the sample, and observing it at high magnification. ■ Advantages - Enlarged images can be obtained with sub-nanometer spatial resolution, allowing for the observation and analysis of the sample's fine structure and lattice defects. - It is possible to evaluate the crystallinity of the sample and identify materials. - By fabricating samples using FIB (Focused Ion Beam), it is possible to observe specific locations within a device with pinpoint accuracy. - By combining optional features, it is also possible to analyze the composition and state of localized areas. ■ Disadvantages - It is necessary to thin the sample (in some cases, thinning may be difficult for certain samples). - It does not observe individual atoms but rather displays average information in the thickness direction of the sample (typically about 0.1 μm thick). - Sample processing and observation may lead to alteration or deformation of the sample.

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[EMS] Emission Microscopy Method

[EMS] Emission Microscopy Method

Rapid identification of the malfunctioning area.

EMS is a method that quickly identifies the location of faults by detecting weak light emissions caused by abnormal operation of semiconductor devices. It is also referred to as EMMS, PEM, or EMI. - Only transparent materials can be evaluated in the measurement wavelength range (from the visible to near-infrared region). - It is possible to capture internal defects such as cracks, crystal defects, oxide film breakdown due to ESD, and shorts caused by Al spikes with low damage.

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[SIM] Scanning Ion Microscopy Method

[SIM] Scanning Ion Microscopy Method

Observation of SIM images is possible with high resolution (accelerating voltage 30kV: 4nm).

- SIM imaging observation is possible with high resolution (accelerating voltage 30kV: 4nm). - Compared to SEM images, SIM images provide information about the extreme surface layer. - Observation of metal crystal grains is possible (e.g., Al, Cu). - The resolution is inferior to SEM images (SIM: 4nm, SEM: 0.5nm). ■Features of MST-owned equipment - Compatible with JEIDA standard wafers with a maximum sample size of 300mm in diameter. - Continuous cross-sectional SIM imaging acquisition is possible in combination with FIB (Focused Ion Beam) processing (Slice & View).

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[Analysis Case] Evaluation of the Diffusion Layer Structure of Bipolar Transistors

[Analysis Case] Evaluation of the Diffusion Layer Structure of Bipolar Transistors

Clearly observable structure of the diffusion layer including pn junction determination.

It is possible to observe in detail from an overview of the NPN bipolar transistors within commercially available LSI to an enlarged view of the emitter section. This is an example where a cross-section passing through the center of the emitter electrode was exposed, and AFM observation and SCM measurement were conducted. By overlaying the AFM image, the positional relationship with the wiring becomes clear.

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[Analysis Case] Evaluation of Specific Crystalline Grains in CIGS Thin-Film Solar Cells

[Analysis Case] Evaluation of Specific Crystalline Grains in CIGS Thin-Film Solar Cells

Observation of orthogonal cross-sections at locations with characteristics identified in EBIC measurements of arbitrary cross-sections.

Insights into the relationship between electrical properties and crystals can be obtained through EBIC and EBSD, but the depth of information differs. For areas where electrical properties were characteristic in the EBIC distribution measurement, we created cross-sectional samples and conducted STEM imaging in the depth direction. Additionally, we measured electron diffraction for each crystal grain. This further clarified the relationship between electrical properties and crystal grains and grain boundaries. By performing STEM observation and electron diffraction measurements, it is possible to obtain localized information about specific crystal grains.

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[Analysis Case] Evaluation of the Mixed State of the Active Layer in Organic Thin-Film Solar Cells

[Analysis Case] Evaluation of the Mixed State of the Active Layer in Organic Thin-Film Solar Cells

Evaluation of the distribution state of organic materials using low-energy STEM observation and EELS measurement.

By using low-energy STEM observation and STEM-EELS surface analysis, we evaluated the mixed state of the active layer in bulk heterojunction solar cells. For the evaluation, samples were prepared with only the active layer deposited on ITO. The contrast in the low-energy STEM image (Photo 1) corresponds to the elemental distribution of S and C in the STEM-EELS images (Photos 2 and 3), confirming that it reflects the bulk heterostructure. Additionally, a bias in the distribution of S was observed, suggesting that P3HT is segregated towards the surface side.

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[Analysis Case] Observation of Heterojunction Interface in CIGS Thin-Film Solar Cells

[Analysis Case] Observation of Heterojunction Interface in CIGS Thin-Film Solar Cells

Evaluation of the crystal structure of the high-resistance layer at the CdS/CIGS junction interface using ultra-high-resolution STEM.

We directly observed the CdS/CIGS heterojunction interface using a Cs-corrected STEM device. TEM images, high-resolution HAADF-STEM images, and simulations using first-principles calculations confirmed that CIGS and CdS are heteroepitaxially joined.

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[Analysis Case] Resistance Evaluation of Heterojunction Interface in CIGS Solar Cells

[Analysis Case] Resistance Evaluation of Heterojunction Interface in CIGS Solar Cells

Evaluation of local resistance distribution using scanning spreading resistance microscopy (SSRM) under vacuum.

The heterojunction interface of ZnO/CdS/CIGS in CIGS thin-film solar cells was analyzed using the SSRM method, and the local resistance distribution was measured. By conducting measurements in a vacuum environment, we were able to remove adsorbed water from the measurement surface and achieve high spatial resolution. The measurement results indicate that we can measure the resistance values of each layer with nanometer-level spatial resolution. The resistance values of each layer differ by several orders of magnitude, indicating differences in carrier concentration. It was found that the CIGS layer has a higher resistance than the i-ZnO layer, and that CdS has an even higher resistance than these layers.

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[Analysis Case] Cross-Section Observation of Organic Thin-Film Solar Cells

[Analysis Case] Cross-Section Observation of Organic Thin-Film Solar Cells

Using low acceleration voltage STEM, slight density differences in organic films can be observed.

In bulk heterojunction solar cells using mixed films of p-type and n-type materials, it is necessary to appropriately control the mixing state of the materials within the film for high efficiency. In films with low density (such as organic films), it is difficult to achieve contrast using a dedicated TEM machine at high acceleration voltages (several hundred kV) due to the high transmission of the electron beam. On the other hand, in STEM imaging at low acceleration voltages, where slight differences in density are reflected, the mixing state within the film can be clearly observed.

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[Analysis Case] Observation of Crystal Structure of Multicomponent Metallic Nanoparticles by TEM

[Analysis Case] Observation of Crystal Structure of Multicomponent Metallic Nanoparticles by TEM

Ultra-high resolution STEM observation of InGaZnO4 particles

The STEM device equipped with a Cs collector (spherical aberration correction function) enables ultra-high-resolution observation (resolution of 0.10 nm). The HAADF*-STEM image, which is sensitive to atomic weight, is an effective tool for directly understanding multi-component crystal structures. In this study, we evaluated micro-particles in oxide semiconductors, which can be applied to the atomic arrangement at heterogeneous material interfaces and compound interfaces, as well as grain boundary segregation assessments. *High-Angle Annular Dark-Field: Contrast is obtained that is proportional to atomic weight (Z).

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[Analysis Case] Cross-sectional Observation of TEM/SEM Organic EL and Gate Oxide Film

[Analysis Case] Cross-sectional Observation of TEM/SEM Organic EL and Gate Oxide Film

Low-acceleration STEM observation allows for contrast even in low-density membranes.

For membranes with low density, it is difficult to achieve contrast at high acceleration voltages (hundreds of kV) due to the high transmission capability of the electron beam. However, in low acceleration voltage SEM-STEM images, slight differences in density can be reflected, allowing for clear composition contrast. This can be applied to organic EL films, low-k films, gate oxide films, TEOS films, BPSG films, etc., where the differences in density, average mass, and composition are small. 1) STEM observation using SEM equipment with lower acceleration voltage compared to dedicated TEM equipment. Measurement methods: TEM, SEM Product fields: LSI, memory, display, solar cells, lighting Analysis purposes: Shape evaluation, film thickness evaluation For more details, please download the materials or contact us.

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[Slice&View] Three-Dimensional SEM Observation Method

[Slice&View] Three-Dimensional SEM Observation Method

By repeatedly performing cross-sectioning processing with FIB and observation with SEM, and reconstructing the obtained images, three-dimensional structural information can be obtained.

Using a high-resolution SEM device equipped with FIB, we can obtain three-dimensional structural information by repeatedly performing cross-sectioning (Slice) with FIB and observing (View) with SEM, and then reconstructing the acquired images. Similarly, Slice & View is also possible for SIM (Scanning Ion Microscope) images. - It is possible to observe secondary electron (SE), backscattered electron (BSE) images, and scanning ion microscope (SIM) images.

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[SMM] Scanning Microwave Microscopy Method

[SMM] Scanning Microwave Microscopy Method

Scanning Microwave Microscopy

SMM scans the measurement sample using a conductive probe to observe its surface topography. Simultaneously, microwaves are irradiated from the probe to the sample, and by measuring the reflected response, it is possible to obtain signals correlated with carrier concentration, particularly in the case of semiconductors. The intensity of the SMM signal is linearly correlated with carrier concentration, which is a characteristic feature that provides high quantitativeness. - For Si devices, sensitivity is present for carrier concentrations around 10^15 to 10^20 cm^-3. - Since signals correlated linearly with carrier concentration can be obtained, quantitative evaluation (semi-quantitative) is possible under certain assumptions. - AFM images can also be acquired. - Various semiconductors such as Si, SiC, GaN, InP, and GaAs can be measured. This document introduces application examples, principles, and data examples. For more details, please download the document or contact us.

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[Analysis Case] Observation of the Cross-Section of Tooth Enamel Prisms

[Analysis Case] Observation of the Cross-Section of Tooth Enamel Prisms

Applying FIB processing technology, the entire interface of enamel/dental adhesive is observed.

In dental caries treatment, adhesives are used to integrate the filling material used to fill the "cavity" with the tooth structure. The adhesive must have a strong bonding strength with the tooth and the ability to withstand acids and heat that may occur in the oral cavity over a long period after treatment. Observing the adhesive interface is an effective means for evaluation and consideration. By using a manufacturing method that employs FIB processing technology, we were able to achieve effective results that could not be obtained with conventional ultra-thin sections made with diamond knives, and we would like to introduce this.

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