Last Updated： Aggregation Period:Jan 14, 2026～Feb 10, 2026
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Last Updated： Aggregation Period:Jan 14, 2026～Feb 10, 2026
This ranking is based on the number of page views on our site.
Last Updated： Aggregation Period:Jan 14, 2026～Feb 10, 2026
This ranking is based on the number of page views on our site.
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Contributing to the improvement of customer productivity through the automation of analysis - BL Tech Online Exhibition
Contributing to the improvement of customer productivity through the automation of analysis. BL Tech is currently holding an online exhibition.
【Technical Data Presentation】Collaboration on Metal Analysis in Environmental and Wastewater Samples! ～Automation Equipment for Sample Preparation in Environmental Analysis and ICP/MS Measurement (AATM)～
The pretreatment methods for factory wastewater, environmental water, groundwater, etc., use substances such as nitric acid, as specified in factory wastewater testing methods and standards set by the Ministry of the Environment. However, the analytical procedures are complicated and require significant effort for decomposition, and care must be taken to avoid splashes of nitric acid reagents on the skin and eyes, as well as exposure to acidic gas emissions. To ensure the safety of analysts, improve work efficiency, and eliminate human error, our company introduces a device capable of automating the entire process from pretreatment to measurement in environmental analysis, wastewater analysis, and soil analysis. <Some introduction examples> ■ Inorganic analysis of wastewater using ICP/MS ■ Inorganic analysis of environmental water (river water, seawater) using ICP/MS ■ Inorganic analysis of soil (content/leaching) using ICP/MS ■ Inorganic analysis of groundwater and drinking water using ICP/MS *For detailed specifications, please download the PDF. Feel free to contact us.
Diverse sample environments such as gas filling and UHV! Hard and soft collaboration with the synchrotron beamline is possible.
The "STXM" is a compact and rigidly designed scanning transmission X-ray microscope for synchrotron radiation. It features a combination of detection methods such as transmission, fluorescence, and electron yield. Utilizing a zone plate, it boasts a high spatial resolution of 20 to 100 nm. We customize and develop user-friendly data acquisition software according to our customers' needs. 【Features】 ■ High spatial resolution using a zone plate ■ Position stability of less than 5 nm ■ Compact and rigid design ■ Combination measurement of detectors ■ User-friendly data acquisition software ■ Hardware and software integration with synchrotron beamlines *For more details, please refer to the PDF document or feel free to contact us.
Changes in crystal orientation and crystal grain size can be analyzed! We introduce the EBSD (Electron Backscatter Diffraction) method.
The EBSD method is a technique for analyzing the distribution of crystal grains, microstructure, and crystal phase distribution by calculating the crystal orientation of patterns continuously captured based on the information of the crystal structure of the sample. Materials with a crystalline structure, such as metals and ceramics, are thought to be composed of numerous crystal lattices like cubic ones, and this analytical method examines the orientation of these lattices (crystal orientation). Various maps are used, including IQ maps (Image Quality Maps), IPF maps, GROD maps, and pole figures. 【Features】 ■ The EBSD method is a technique for analyzing the distribution of crystal grains, microstructure, and crystal phase distribution. ■ Uses the TSL Solutions OIM7.0 crystal orientation analysis device. ■ Analyzes the orientation of the crystal lattice (crystal orientation). ■ Changes in crystal orientation and grain size due to different processing conditions (such as rolling and extrusion) can be analyzed. *For more details, please refer to the PDF document or feel free to contact us.
Distinguish and identify compounds with similar structures! You can obtain information such as the number of protons and structural characteristics.
At Aites Co., Ltd., we conduct 1H NMR analysis of phthalate esters. NMR analysis and GCMS analysis are effective for distinguishing and identifying compounds with similar structures. In this analysis, we can obtain information about the number of protons from the integral values, structural features such as functional groups from the chemical shifts, and the positional relationships with surrounding protons from the coupling patterns and coupling constants. *For more details, please refer to the PDF document or feel free to contact us.
Distinguish compounds with similar molecular structures through NMR analysis, elucidating the binding positions of side chains and substituents, as well as branching structures!
At Aites Co., Ltd., we conduct 1H NMR analysis of phthalate esters. NMR analysis is an effective method for distinguishing compounds with similar molecular structures and elucidating structures such as the bonding positions of side chains and substituents, as well as branching structures. In organic synthesis and polymer synthesis, it is an essential analysis to confirm whether the desired molecular structure has been obtained. The characteristic effects and efficacy of pharmaceuticals, supplements, food, and fibers are influenced by the positions of substituents in the molecular group and the molecular structure. Our skilled team will provide in-depth organic molecular structure analysis. *For more details, please refer to the PDF document or feel free to contact us.
Investigation of the joint condition and joining methods of crimp terminals, as well as the types of materials! Introduction to cross-sectional observation and elemental analysis using SEM/EDX.
I would like to introduce the topic of "Cross-sectional observation of copper terminals and elemental analysis using SEM/EDX." We conducted cross-section preparation of the joint area of the copper crimp terminal fixture for resistance measurement, applied chemical etching to the prepared cross-section, and observed the metal structure before and after etching. As a result, we infer that the detected elements are P (phosphorus), Ag (silver), and Cu (copper), indicating that it is a silver-containing phosphorus copper solder material. *For more details, please refer to the PDF document or feel free to contact us.*
It is possible to perform non-destructive testing from fault location identification to internal observation! High-precision identification of heat generation areas can be achieved.
Thermal analysis is a method for identifying defective areas by detecting heat generated at leak points due to applied voltage using a high-sensitivity InSb camera. By detecting the weak heat generated from shorts and leaks with a high-sensitivity InSb camera, it is possible to non-destructively identify the failure points of electronic components such as semiconductors. Furthermore, non-destructive observation can also be performed using X-ray inspection equipment. 【Features】 ■ Identifying defective areas by detecting heat generated at leak points with a high-sensitivity InSb camera ■ Analyzing samples in a non-destructive state, and also capable of analyzing electronic components that are difficult to analyze with OBIRCH or emission methods ■ Using the lock-in function to acquire phase information allows for high-precision identification of heat generation points *For more details, please refer to the PDF document or feel free to contact us.
For the evaluation of lithium-ion battery materials! Analyzing chemical bonding states using X-ray photoelectron spectroscopy.
Regarding the NMC reagent, an evaluation of the valence of metal oxides was conducted through XPS state analysis. Qualitative analysis was performed on commercially available NMC reagents, yielding values for the NiMnCo ratio that are close to the specifications of the reagent. Additionally, F and C, which are thought to originate from the binder component, were also detected. 【Analysis of NMC Reagent (Partial)】 ■ The main oxides of Ni, Mn, and Co are inferred to be NiO (Ni2+), MnO2 (Mn4+), and Co3O4 (a mixed valence of Co2+ and Co3+). ■ C, O, and F show a peak shift consistent with organic compounds thought to originate from the binder. ■ Peak assignments are inferred based on various literature and databases. *For more details, please download the PDF or feel free to contact us.
Automatic measurement of microbial growth conditions in a temperature gradient environment or constant temperature environment.
By performing shaking culture while maintaining a constant temperature environment for the culture block equipped with optical measurement functions, the growth curve of microorganisms can be obtained. 【Features】 ● Up to 6 units can be connected, allowing for the measurement of absorbance for 36 samples, and by connecting to a computer, it is possible to graphically display and save the measurement values. ○ For more details, please contact us or download the catalog.
High rigidity and long lifespan! Selectable position detection with magnetic sensors and proximity switches.
We would like to introduce the separator "VEG Series" that we handle. You can choose between position detection with a magnetic sensor or a proximity switch. It has a long lifespan and is maintenance-free for up to 10 million cycles. Additionally, we also offer the "VE Series," which improves reliability in the production process by sorting one workpiece at a time with two rods. 【Features】 <VEG Series> ■ Hardened stainless steel guide ■ Accommodates various needs ■ Long lifespan *For more details, please refer to the PDF document or feel free to contact us.
![[SIM] Scanning Ion Microscopy Method](https://image.mono.ipros.com/public/product/image/d09/387108028/IPROS2308410282720757772.jpg?w=280&h=280)
Observation of SIM images is possible with high resolution (accelerating voltage 30kV: 4nm).
- SIM imaging observation is possible with high resolution (accelerating voltage 30kV: 4nm). - Compared to SEM images, SIM images provide information about the extreme surface layer. - Observation of metal crystal grains is possible (e.g., Al, Cu). - The resolution is inferior to SEM images (SIM: 4nm, SEM: 0.5nm). ■Features of MST-owned equipment - Compatible with JEIDA standard wafers with a maximum sample size of 300mm in diameter. - Continuous cross-sectional SIM imaging acquisition is possible in combination with FIB (Focused Ion Beam) processing (Slice & View).
![[Analysis Case] Evaluation of Crystal Grains and Resistance in CIGS Thin-Film Solar Cells](https://image.mono.ipros.com/public/product/image/540/387108040/IPROS8974524134661353818.jpg?w=280&h=280)
Resistance distribution and evaluation of crystal grains and grain boundaries at the same location.
In SSRM, we can obtain insights into local resistance, while in EBSD, we can gain knowledge about crystal grains and grain boundaries. By conducting SSRM measurements at the same location as the EBSD measurements, we measured the local resistance in areas that include crystal grain boundaries, which we would like to introduce.
![[Analysis Case] Observation of Crosshatch Pattern Shape](https://image.mono.ipros.com/public/product/image/91a/2000026075/IPROS3337773362352639036.jpg?w=280&h=280)
It is possible to visualize small irregularities with high vertical resolution.
A scanning white light interferometer (optical interferometer) can perform high-precision non-contact three-dimensional measurements of the surface shape of a sample with "high vertical (Z) resolution (0.1 nm) and a wide (X-Y) measurement field of view (50 μm to 4.2 mm)." An example of observing the surface shape of a Si/SiGe layered sample (crosshatch pattern) is presented. Shape evaluation with an average roughness (Ra) of approximately 1 nm is possible.
![[Analysis Case] Evaluation of the Distribution of High Fatty Acids in Hair](https://image.mono.ipros.com/public/product/image/50f/2000026077/IPROS1662053763157111612.jpg?w=280&h=280)
Visualization of the distribution of high-grade fatty acids.
Using TOF-SIMS for ion imaging analysis of hair (beard) cross-sections, we investigated the distribution of long-chain fatty acids, which are also detected as sebum. As a result, it was found that the distribution varies depending on the type of fatty acid.
![[Analysis Case] Breakdown Observation of 600V Rated SiC Diode](https://image.mono.ipros.com/public/product/image/65a/2000026081/IPROS3596296975584068307.jpg?w=280&h=280)
Consistent analysis from preprocessing to luminescence location identification.
By using a high-voltage power supply (capable of applying up to 2000V), it is possible to induce breakdown in diodes with high breakdown voltage. In this case, a SiC Schottky diode with a breakdown voltage of 600V was operated, and by applying high voltage in the reverse direction, breakdown was induced. After removing the cathode electrode through polishing, emission microscopy observations were conducted to identify the location of the breakdown current generation. Commercially available products were used for the measurements.
![[Analysis Case] Three-Dimensional Distribution Evaluation of Dopants in MEMS Using SIMS](https://image.mono.ipros.com/public/product/image/f3b/2000026091/IPROS8372370966989198260.jpg?w=280&h=280)
Imaging SIMS allows for the visualization of concentration distributions of trace elements in micro-regions.
We conducted three-dimensional imaging SIMS measurements of commercial MEMS products for B and As (measurement area: 75μm square, depth: approximately 1.5μm). After data processing, it is possible to extract surface distributions at arbitrary cross-sections and depths, depth direction distributions in arbitrary areas, and line profiles at arbitrary locations. Note: Since the sample is being excavated with an ion beam while capturing images in the depth direction, this constitutes destructive analysis.
HAADF-STEM: High-Angle Annular Dark Field Scanning Transmission Electron Microscopy
■Principle HAADF-STEM (High-angle Annular Dark Field Scanning TEM) images are obtained by scanning a finely focused electron beam across the sample and detecting the electrons that are scattered at high angles using an annular detector. ■Features Materials with a larger Z2ρ scatter more at high angles ↓ Heavy elements appear dark in STEM images and bright in HAADF-STEM images. Since contrast is obtained that is proportional to atomic number (Z), it is also referred to as Z-contrast imaging.
![[Analysis Case] Resistance Evaluation of Heterojunction Interface in CIGS Solar Cells](https://image.mono.ipros.com/public/product/image/985/2000026101/IPROS1055062992217362280.jpg?w=280&h=280)
Evaluation of local resistance distribution using scanning spreading resistance microscopy (SSRM) under vacuum.
The heterojunction interface of ZnO/CdS/CIGS in CIGS thin-film solar cells was analyzed using the SSRM method, and the local resistance distribution was measured. By conducting measurements in a vacuum environment, we were able to remove adsorbed water from the measurement surface and achieve high spatial resolution. The measurement results indicate that we can measure the resistance values of each layer with nanometer-level spatial resolution. The resistance values of each layer differ by several orders of magnitude, indicating differences in carrier concentration. It was found that the CIGS layer has a higher resistance than the i-ZnO layer, and that CdS has an even higher resistance than these layers.
![[Analysis Case] Structural Analysis of Silicon Dioxide](https://image.mono.ipros.com/public/product/image/498/2000026143/IPROS5477603110305780350.jpg?w=280&h=280)
Structural analysis of amorphous silicon dioxide (SiO2) using Raman scattering spectroscopy.
Silicon dioxide (SiO2) is widely used in semiconductors as an insulating film, in FPD substrate materials, optical materials, and from medical devices to jewelry; however, conducting structural analysis on glass, which is amorphous, is very challenging. Focusing on the cyclic bonding of SiO2 in glass, Raman measurements were conducted. (Figure 1) In single crystal quartz, the spectrum in the glass state is significantly different, and phonon bands due to long-range order are observed. (Figures 2, 3)
![[Analysis Case] Composition and Thickness Evaluation of Ultra-Thin SiON Films](https://image.mono.ipros.com/public/product/image/ec2/2000026145/IPROS4686018529280117826.jpg?w=280&h=280)
Estimation of film thickness using the average free path of photoelectrons.
For extremely thin films with a thickness of a few nanometers or less, such as natural oxide films on silicon wafers and silicon nitride thin films, we will measure the Si2p spectrum of the sample's surface. By performing waveform analysis on the obtained spectrum, we will determine the proportion of each bonding state and estimate the film thickness from this result and the average free path of photoelectrons (Equation 1).
FIB: Focused Ion Beam Processing
In the method for preparing thin film samples for TEM observation using FIB, high-energy Ga ions (acceleration voltage of 30 kV) are used, resulting in the formation of a damage layer on the processed surface, which causes a deterioration in the image quality of the TEM. By performing processing at a lower acceleration (2 kV) than conventional methods, the damage layer can be reduced, leading to improved image quality. By reducing the damage on the FIB processed surface through low-acceleration FIB processing, high-quality and reliable data can be obtained in TEM image observation and EELS measurements.
FIB: Focused Ion Beam Processing
It is possible to directly extract small pieces from the sample (micro-sampling) and perform FIB processing.
We will conduct contract analysis of materials and products entrusted to us by our customers. We will handle everything from pre-treatment to measurement and provide analysis data.
MST offers various materials and research contract analysis, contract evaluation, and contract assessment services. Our knowledgeable sales representatives will propose the optimal analysis plan! With assured quality and reliable support, we leave no questions unanswered for our customers. We broadly accommodate contract analysis and contract evaluation in the electronics field, including semiconductors, metals, and batteries, as well as in the life sciences field, including pharmaceuticals, cosmetics, and food. - We accept inquiries regarding analysis methods. - Please feel free to contact us for a cost estimate for analysis. - Inquiries and applications regarding analysis are accepted via phone or contact form. 【Examples of Contract Analysis Data】 ○ TEM Analysis: Observation at the atomic level ○ SIMS Analysis: Evaluation of impurity concentration ○ XRD Analysis: Identification of crystals using X-rays For more details, please download the catalog or contact us.
![[Analysis Case] PL Mapping of Multicrystalline Silicon Solar Cells](https://image.mono.ipros.com/public/product/image/f01/2000243744/IPROS10076192363919426961.jpg?w=280&h=280)
It is possible to non-destructively identify the location of defects in solar cell cells.
When light with energy greater than the bandgap of a solar cell is irradiated, carriers are generated, and some of them undergo radiative recombination. The light emitted during this process is called photoluminescence (PL). However, in areas where defects are present, carriers are trapped, resulting in reduced PL intensity. Therefore, by conducting PL mapping measurements, it is possible to non-destructively and easily identify defect locations. Below is an example of identifying defect locations through PL mapping measurements in multicrystalline silicon solar cell modules.
![[Analysis Case] Investigation of Curing Temperature and Glass Transition Temperature of Epoxy Resin](https://image.mono.ipros.com/public/product/image/6af/2000244233/IPROS17961735915081065612.jpg?w=280&h=280)
Evaluation of thermal properties by DSC (Differential Scanning Calorimetry) measurement.
For the two-component mixed epoxy resin, we investigated the curing temperature and the glass transition temperature (Tg), which is an indicator of heat resistance, using Differential Scanning Calorimetry (DSC). When measuring the resin before curing with DSC, it was confirmed that a rapid exothermic reaction began around 103°C (Figure 1). This was due to the polymerization (curing) of the resin occurring as a result of the temperature increase. Furthermore, after air cooling the cured resin to room temperature, a second DSC measurement was conducted, which confirmed a shift of the baseline towards the endothermic side due to the glass transition of the resin, with Tg being approximately 116°C (Figure 2).
![[Analysis Case] SCM Analysis of SiC Planer Power MOS](https://image.mono.ipros.com/public/product/image/189/2000244317/IPROS4496553748202685698.jpg?w=280&h=280)
You can visualize the diffusion layer structure of SiC devices.
In SCM, it is possible to identify the p/n polarity of semiconductors and visualize the shape of the diffusion layer. This method has been utilized for Si devices, but it can also be applied to SiC devices in areas where the carrier concentration is sufficiently high. This document presents the results of SCM analysis conducted on a cross-section of a SiC Planar Power MOS.
