アイスモス・テクノロジー・ジャパン List of Products and Services

GEN1 Series Other package types are also available.

• Electron tube
• power supply
• Transistor

GEN1 Series Other package types are also available.

• Electron tube
• power supply
• Transistor

A MOSFET that is strong against avalanche with a rating of 8A, 600V. It is ideal for compact power supplies.

• Electron tube
• power supply
• Transistor

GEN1 series Other package types are also available.

• Electron tube
• power supply
• Transistor

This is a leadless package product rated for 20A, 600V, and 170mΩ.

• Electron tube
• power supply
• Transistor

Our company is a best-in-class supplier that provides MEMS technology processes, advanced technology base wafers, and SOI (silicon on insulator) and bonded silicon substrates at a high cost-effectiveness. For more details, please refer to our catalog or website. You can also check inventory information.

• Wafer

This document introduces the electrical characteristics, various circuit examples, and data of the high-voltage SJMOSFET products provided by Icemos Technology Ltd. It is suggested as reference material for engineers designing power supply products. Please take a moment to read it. 【Contents (excerpt)】 ■ Applications ■ Electrical characteristics ■ Maximum ratings ■ EAS avalanche energy ■ dv/dt resistance characteristics during reverse recovery

• Electron tube

Our GEN1 series MOSFETs have been released since 2011 and are used in various fields such as audio, industrial, and medical power supplies.

• power supply

The ICE15N73FP from IceMOS Technology is a TO220 FullPak package rated at 15A, 730V. 【Features】 ■ TO220 FullPak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

• Transistor

The ICE11N70FP from IceMOS Technology is a TO220 FullPak package rated for 11A and 700V. 【Features】 ■ TO220 FullPak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

• Transistor

The ICE25S65FP from IceMOS Technology is a TO220 Full Pak package rated for 25A and 650V. It has low Qg, contributing to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance

• Transistor

The ICE32S60FP from Ice Moss Technology is a TO220 Full Pak package rated for 32A and 600V. It has a low Qg, contributing to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt tolerance ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance

• Transistor

The ICE15S60FP from IceMOS Technology is a TO220 Full Pak package rated for 15A and 600V. It has a low Qg, contributing to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

• Transistor

The ICE8S65FP from Ice Moss Technology is an 8A, 650V TO220 Full Pak package. It has low Qg and contributes to energy savings! 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt resistance ■ High UIS characteristics ■ High peak current resistance ■ Enhanced mutual conductance performance

• Transistor

The ICE10N60FP from IceMOS Technology is a TO220 Full Pak package rated for 10A and 600V. 【Features】 ■ TO220 Full Pak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced transconductance performance

• Transistor

The ICE20N60 from IceMOS Technology is a TO220 package rated for 20A and 600V. 【Features】 ■ TO220 package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance

• Transistor

The ICE20N60B from Ice Moss Technology is a TO263-2L, D2PAK package rated for 20A and 600V. 【Features】 ■ TO263-2L (D2PAK) package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced transconductance performance

• Transistor

The ICE22N60B from Ice Moss Technology is a 22A, 600V TO-263 (D2PAK) package. 【Features】 ■ TO263-2L (D2PAK) package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current capability ■ Enhanced mutual conductance performance

• Transistor

The ICE20N60FP from Ice Moss Technology is a full-pack device rated for 20A and 600V. 【Features】 ■ TO220 Fullpak package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced mutual conductance performance * For more details, please refer to the PDF document or feel free to contact us. * An English version of the catalog is available for download.

• Transistor

【SOI Wafer】: (Silicon-On-Insulator) We supply SOI wafers with a device layer of thick film of 100-200mm or thin film of less than 1um. Features: ■ Covers a wide range of fields such as optical engineering surface acoustic wave filters, including silicon wafers and thermal oxide films. ■ IceMOS provides world-class product quality while continuously improving through process management based on Six Sigma statistical control methods. ■ Offers sufficiently competitive costs and flexible responses. 【Silicon-Silicon Bonding】: Low leakage, high quality, minimal warping, and low defect density! Offered as a cost-effective material. Using direct wafer bonding technology, it is possible to create silicon substrates that include various single-crystal silicon. Resistance range: 1mΩ-cm to 10kΩ-cm Features: ■ N and P-type materials, orientation direction can be arranged. ■ Low leakage, high quality, minimal warping, low defect density. ■ Thickness variation < +/-0.5um. ■ Transition levels from high concentration to low concentration can be adjusted sharply or softly.

• Wafer

The "ICE47N60W N-channel device" is a highly regarded super junction MOSFET from IceMOS. It is designed for high-performance power systems and is used in AC/DC, DC/DC, and DC/AC circuits around the world. 【Features】 ■ TO247 package ■ Low on-resistance ■ Ultra-low gate charge ■ High dv/dt withstand capability ■ High UIS characteristics ■ High peak current tolerance ■ Enhanced transconductance performance *For more details, please refer to the PDF document or feel free to contact us. *You can download the English version of the catalog.

• switch

The "Super Junction MOSFET" is our power MOSFET that utilizes high-voltage super junction technology. By combining silicon MOSFETs with MEMS process technology, we deliver world-class best-in-class performance. We have developed unique manufacturing technology using MEMS technology, and by expanding to smaller dimensions, we provide high-performance and cost-effective MOSFETs. 【Features】 ■ High voltage resistance of over 600V ■ High dv/dt resistance ■ High avalanche characteristics ■ High peak current characteristics ■ Enhanced mutual conductance characteristics, etc. *For more details, please download the PDF or contact us.

• Other electronic parts

Icemos Technology is a best-in-class supplier of MEMS and advanced engineering substrates. With over 20 years of experience, Icemos promises that all customers will receive excellent service from inquiry to product delivery, backed by exceptional manufacturing skills and the latest technological developments. Our engineering team provides technical support for innovative product development, design proposals, and special services. If existing products are not listed, we will also develop unique special products in collaboration with our customers. This is the service that sets us apart. SOI = Silicon on Insulator SiSi = Silicon Silicon bonded DSOI = Double SOI DSP = Double Sided Polished CSOI = Cavity SOI Thin SOI TSOI = Trench SOI TSV = Through-Silicon Vias Foundry services Please feel free to contact us. http://jp.icemostech.com/products.html

• Wafer

Ice Moss Technology has developed an innovative and powerful internal interconnection technology for wafers. These serve as a means to solve packaging issues related to designs such as ICs and MEMS. This internal interconnection solution makes design easier and provides a way to facilitate wafer-level packaging, such as solder bump contacts. 【Features】 ■ Suitable for substrates like CMOS ■ The internal interconnection areas are etched into the wafer, with doped polysilicon embedded ■ The wafer maintains surface metal contamination standards and flatness, with particle levels meeting industry standards ■ The wafer remains stable even when subjected to a 1200°C diffusion process *For more details, please refer to the PDF document or feel free to contact us.

• Other machine elements

Ice Moss provides dielectric separation technology that separates high-voltage sections and components on a single chip. Isolation uses thick film SOI, deep trench etching with a high aspect ratio, and embedded structures of oxide film and poly. This technology is applicable to wafer sizes of 100-150mm, with device layer thicknesses ranging from 1.5 to 100um. 【Features】 ■ Elimination of embedded layers ■ High-quality crystalline silicon layer ■ Elimination of epitaxial layers ■ Minimization of parasitic capacitors ■ Elimination of P+ isolation *For more details, please refer to the PDF document or feel free to contact us.

• Other machine elements

Ice Moss Technology supplies thin-film SOI wafers with device layers of less than 1um. With over 20 years of experience in SOI manufacturing, Ice Moss can provide products of high quality similar to thick-film SOI used in RF applications. Ice Moss's thin-film SOI wafers cover a wide range, including silicon wafers and thermal oxide films, and can be used in fields such as optical engineering surface acoustic wave filters. 【Features】 ■ Capable of covering a wide range, including optical engineering surface acoustic wave filters, with silicon wafers and thermal oxide films. ■ Through process management based on Six Sigma statistical control methods, Ice Moss continuously improves while providing world-class product quality. ■ Competitive costs and flexible responses. *For more details, please refer to the PDF document or feel free to contact us.

• Other machine elements

Ice Moss Technology is a leading supplier of thick-film SOI (Silicon-On-Insulator) wafers in the 100-200mm range, applicable to a wide range of fields including IC and MEMS applications. With over 20 years of experience in SOI manufacturing, we provide wafers with specifications that can meet the needs of various market sectors. 【Features】 ■ A highly skilled application engineering team assists in selecting parameter estimates according to requirements. ■ Offered as a perfect custom SOI solution. ■ Through process management based on Six Sigma statistical control methods, Ice Moss continuously improves while delivering world-class product quality. ■ Competitive costs and flexible responses. *For more details, please refer to the PDF materials or feel free to contact us.

• Other machine elements

We provide customers manufacturing semiconductor devices with Silicon-Silicon bonded wafers as a cost-effective alternative to traditional materials such as thick epitaxial and inverted epitaxial wafers, which have been conventionally used for power devices and PiN diodes. By using direct wafer bonding technology, it is possible to create silicon substrates that include various single crystal silicon types. The resistance range of these materials is from 1 mΩ-cm to 10 kΩ-cm. 【Features】 ■ Orientation direction can be arranged with N-type or P-type materials ■ Low leakage, high quality, minimal warping, and low defect density ■ Variation in layer thickness can be kept to +/-0.5 μm or less ■ Transition levels from high concentration to low concentration can be adjusted sharply or softly according to customer applications *For more details, please refer to the PDF document or feel free to contact us.

• Other semiconductors

Ice Moss delivers world-class DSP (Double Sided Polished) solutions based on over 20 years of experience. Our highly skilled team, with extensive experience in design and manufacturing, provides DSP solutions tailored to meet your needs. 【Features】 ■ Ice Moss's DSP wafers are excellent substrates that allow pattern transfer on both sides. ■ Ice Moss can control thickness and surface roughness with expertise and experience in products and processes, leading to an ideal bonding process. ■ We can also consider non-standard specifications. *For more details, please refer to the PDF document or feel free to contact us.

• Other machine elements

Ice Moss Technology is the leading supplier of DSOI. DSOI is widely used for ICs and MEMS, and based on over 20 years of experience in SOI manufacturing, we provide complete DSOI solutions with a range of interesting specifications that can be applied across various markets. With extensive SOI experience, our application engineers will assist you in selecting the optimal combination of parameters for processing your DSOI wafers. 【Features】 ■ With a flexible approach, Ice Moss can accommodate everything from small lots at the experimental development level to mass production. ■ Our MEMS process engineers have experience in optical, inertial, biomedical, and other MEMS fields. ■ Ice Moss can also provide additional foundry services such as MEMS, trench etching, and isolation structures. *For more details, please refer to the PDF document or feel free to contact us.

• Other machine elements

Our company is a leading supplier of 100-150mm cavity bonding SOI wafers for a wide range of MEMS applications. We provide advanced wafer bonding technology that enables the materials of your cavity specifications to be transformed into innovative products. The cavity bonding SOI wafers from Ismos feature a structure with pre-etched cavities beneath a silicon thin film, allowing customers to design these into advanced devices that meet market demands. 【Features】 ■ Advanced bonding technology ■ Reduces adhesion issues during release ■ Streamlined manufacturing flow ■ Cost-effective Cavity SOI/Si-Si solutions ■ High flexibility in structures tailored to customer applications *For more details, please refer to the PDF document or feel free to contact us.

• Other machine elements