イオンテクノセンター List of Products and Services

PBII is suitable for carbon film for pre-annealing of SiC, RTA is for annealing.

• Other semiconductors
• Prototype Services
• EMS

Customer's request "How much energy and dose should be used to achieve the desired depth and concentration?" And "What depth distribution of dopant ions will be given at the specified energy and dose." , We can provide a simulation. (This service presupposes a request for ion implantation.)

• Other semiconductors
• EMS
• Prototype Services

We can perform ion implantation processing under various conditions according to customer requirements, with a wide variety of samples from chips to 12-inch wafers. The implantation conditions range from 10 to 8,000 KeV, from room temperature to high-temperature heating (600 ° C), and about 60 types of ionic species can be handled.

• Prototype Services
• Other semiconductors
• EMS

We will introduce the evaluation of the crystallinity, film thickness structure, hydrogen content, density, and hardness of DLC (Diamond-Like Carbon).

• Contract Analysis

We provide support for research and development through various methods such as observation of fine semiconductor shapes, evaluation of crystallinity, measurement of impurity concentration, hardness measurement, and failure analysis.

• Contract Analysis

Our company is capable of producing high-precision thin film samples for TEM observation and achieving clear sub-nanometer order structural observations through advanced TEM observation techniques.

• Contract Analysis

We can perform optimal carbon film deposition for SiC as a pre-treatment using PBII, annealing treatment using RTA, and pre- and post-annealing treatments in our company.

• Other semiconductors
• Prototype Services
• EMS

We can provide simulations in response to customer requests such as "What should the energy and dosage be to achieve the desired depth and concentration?" and "What will the depth distribution of the dopant ions be with the specified energy and dosage?" (This service is based on requests for ion implantation.)

• Other semiconductors
• EMS
• Prototype Services

In compound semiconductors such as SiC (silicon carbide) and GaN (gallium nitride), high-temperature ion implantation and high-temperature annealing for dopant activation are required for device fabrication. Our company responds to requests for high-temperature ion implantation and high-temperature annealing. Additionally, due to the high temperatures during annealing, surface protection with a cap film before annealing is necessary. Our company not only provides high-temperature annealing but also meets the needs for carbon cap film deposition using PBII (Plasma Based Ion Implantation). [Contents] High-temperature ion implantation Cap film deposition High-temperature annealing treatment *For more details, please download the PDF or contact us.

• Other semiconductors
• EMS
• Prototype Services

We take pride in our top-level technology and equipment for ion implantation at room temperature, as well as high-temperature ion implantation, which only a few companies in the world can handle. Our company can perform implantation processing under various conditions tailored to customer requests, ranging from chip fragments to 300 mm (12-inch) diameter wafers. Implantation conditions can range from 10 to 8,000 KeV, from room temperature to high-temperature heating (600°C), and we can accommodate approximately 60 types of ion species.

• Prototype Services
• Other semiconductors
• EMS

The Ion Tech Center provides ion implantation services for advanced materials. In the materials, we present frequently asked questions about ion implantation and analysis in a Q&A format. We answer various questions, starting with "What is ion implantation?" as well as "What is amorphous?" and "How is the confidentiality of information regarding samples maintained?" among others. 【Content (excerpt)】 ■Q. What is ion implantation? ■Q. Please tell me about the size and types of samples and wafers that can undergo ion implantation. ■Q. Can I confirm the ion implantation in person? ■Q. What is amorphous? ■Q. How is the confidentiality of information regarding samples maintained? *For more details, please refer to the PDF document or feel free to contact us.

• Wafer
• Ion implantation equipment
• Other contract services

This document introduces the basics of ion implantation, including its purpose, equipment, and evaluation, through illustrations. Ion Tech Center Co., Ltd. offers contract services for the front-end processes of semiconductors, from sample production for research and development to mass production outsourcing. If you are having trouble with ion implantation, please feel free to leave it to us. [Contents] ■Basic knowledge of ion implantation

• Semiconductor inspection/test equipment
• Other semiconductors
• Other contract services

Our ion implantation service has a large number of devices, allowing us to meet a wide variety of needs. 【Features】 - Supports approximately 60 types of diverse ion species - Accommodates a wide range of sizes from small pieces to 300mm (12 inches) - Capable of handling not only semiconductors but also organic materials - Supports high-temperature implantation from room temperature to 600℃ 【Others】 - We also provide simulation for ion implantation. - Please consult us regarding processes before and after ion implantation, including high-temperature annealing. - We offer contract analysis focused on ion implantation evaluation.

• Wafer
• Ion implantation equipment

Aeon Tech Center Co., Ltd. was established as a professional group that meets the demands of the times, inheriting the business of its predecessor, the Aeon Engineering Research Institute. We conduct cutting-edge research and development, particularly focusing on technologies and equipment related to ion implantation, film formation, and analysis, aiming to become a representative creative laboratory in Japan. 【Business Activities】 ■ Contract research and development related to ion engineering ■ Processing of surface treatments for metals, ceramics, semiconductor materials, etc., using ion engineering equipment ■ Physical analysis and evaluation service business ■ Technical information provision service business ■ Support and mediation for industrial property rights such as research results and patents, utility model rights, design rights, trademark rights, etc., at universities and research institutions ■ Planning, development, manufacturing, sales of precision instruments such as measuring devices and analyzers, as well as contract work related to technical guidance and research ■ Planning, development, manufacturing, sales of electronic components and automatic control devices, as well as contract work related to technical guidance and research ■ Management consulting services *For more details, please refer to the external link or feel free to contact us.

• Contract manufacturing
• Processing Contract
• Other semiconductors

This case study collection presents the results of depth resolution measurements conducted by Ion Tech Center Co., Ltd., which provides services such as ion implantation, film formation and analysis, and research and commercialization management. Using Q-pole SIMS (ULVAC: ADEPT-1010), we employed a compound semiconductor sample of Al0.28Ga0.72As/GaAs that was deposited by molecular beam epitaxy (MBE) in 50nm increments to obtain the results of depth resolution. [Overview of Contents] ■ Results of Depth Resolution Measurements *For more details, please refer to the catalog or feel free to contact us.*

• others
• Contract measurement
• Other contract services

"Secondary Ion Mass Spectrometry" is a method for compositional analysis of all elements containing hydrogen by mass analysis of secondary ions emitted when Cs or O2 ions in the range of several keV are irradiated onto a sample. It enables highly sensitive elemental analysis and excellent depth resolution measurements using low-energy ions. [Features] - Compositional analysis of all elements containing hydrogen - Elemental analysis is possible - Measurement of depth resolution using low-energy ions is possible *For more details, please refer to the catalog or feel free to contact us.

• others
• Contract measurement
• Other contract services

This case study presents the results of analyzing a 400 LPI copper mesh (mesh spacing: 63.5 μm) using micro ESCA (Quantum-2000). By specifying the analysis area from the secondary electron image, an analysis of the copper surface in that region was conducted, resulting in a distribution of copper corresponding to the secondary electron image. Furthermore, using this data, measurements such as mesh spacing can be obtained using the length measurement function. [Publication Overview] ■ Analysis using micro ESCA *For more details, please refer to the catalog or feel free to contact us.

• others
• Contract measurement
• Other contract services

"ESCA" is an X-ray photoelectron spectroscopy device capable of narrowing the X-ray probe diameter down to 5μm. By scanning and irradiating X-rays, it generates secondary electron images (SXI: Scanning X-ray Image) that allow for the identification of measurement locations, enabling the analysis of local composition and chemical bonding states. Surface analysis is also possible. [Features] ■ Capable of narrowing the X-ray probe diameter to 5μm ■ Enables analysis of local composition *For more details, please refer to the catalog or feel free to contact us.

• Analytical Equipment and Devices

This case study collection presents examples of depth analysis of multilayer films using the photoelectron spectroscopy device "ESCA" from Ion Tech Center Co., Ltd., which provides services such as ion implantation, film formation and analysis, and research and commercialization management. The results of analyzing a stacked film of silicon oxide and titanium oxide on a silicon substrate using ESCA (Quantum-2000) are included. [Overview of Publication] ■Analysis results of depth analysis of multilayer films using ESCA *For more details, please refer to the catalog or feel free to contact us.

• Other contract services
• Other services
• others

The main equipment includes "HR-TEM," "Q-pole type SIMS," "μESCA," and "RAMAN." We have accumulated know-how in micro and nano-level surface analysis, allowing us to provide reliable data in a short period. We also offer advice on the analysis of unknown samples. 【Observation of Micro Areas - High-Resolution Transmission Electron Microscopy (HR-TEM)】 ○ A method that irradiates a thinly processed sample with a high-speed electron beam, providing magnified images and information on crystal structures through the imaging of transmitted and scattered electrons. ○ It is suitable for evaluating the structure and crystallinity of thin films. High-resolution observation enables the examination of crystal structures. ● For more details, please download the catalog or contact us.

• Food Testing/Analysis/Measuring Equipment

The main equipment includes "HR-TEM," "Q-pole type SIMS," "μESCA," and "RAMAN." We have accumulated know-how in micro and nano-level surface analysis, allowing us to provide highly reliable data in a short period. We also offer advice on the analysis of unknown samples. 【Surface Analysis: X-ray Photoelectron Spectroscopy (ESCA/XPS)】 ○ A method that identifies elements and analyzes composition and chemical bonding states by analyzing the energy of photoelectrons emitted from the surface of a sample when irradiated with X-rays, from a depth of a few nanometers. ○ It is suitable for surface analysis of insulators and allows for depth analysis using Ar ion etching and localized analysis with a beam diameter of 10 μm. ● For more details, please download the catalog or contact us.

• Food Testing/Analysis/Measuring Equipment

The main equipment includes "HR-TEM," "Q-pole type SIMS," "μESCA," and "RAMAN." We have accumulated know-how in micro and nano-level surface analysis, allowing us to provide highly reliable data in a short period. We also offer advice on the analysis of unknown samples. 【Surface Analysis - Secondary Ion Mass Spectrometry (SIMS)】 ○ This method involves mass analysis of secondary ions emitted from the sample when irradiated with Cs or O2 ions at several keV, enabling compositional analysis of all elements containing hydrogen. ○ It allows for high-sensitivity elemental analysis and excellent depth resolution measurements using low-energy ions. ● For more details, please download the catalog or contact us.

• Food Testing/Analysis/Measuring Equipment

The "ESCA" is an X-ray photoelectron spectroscopy device capable of narrowing the X-ray probe diameter to 5μm. By scanning and irradiating X-rays, it generates secondary electron images (SXI: Scanning X-ray Image) that allow for the identification of measurement locations, enabling the analysis of local composition and chemical bonding states. Surface analysis is also possible. 【Features】 ■ Capable of narrowing the X-ray probe diameter to 5μm ■ Enables analysis of local composition *For more details, please refer to the catalog or feel free to contact us.

• others
• Spectroscopic Analysis Equipment

We present an example of analyzing a 400 LPI copper mesh (mesh spacing: 63.5 μm) using a micro ESCA (Quantum-2000). We specified the analysis area from the secondary electron image and conducted surface analysis of copper in that region, obtaining a distribution of copper corresponding to the secondary electron image. Furthermore, using this data, we can measure the mesh spacing and other dimensions with the length measurement function. In addition, while the X-ray probe diameter in conventional ESCA is about 1 mm, our ESCA can narrow the X-ray probe diameter down to 5 μm. *For more details, please refer to the PDF document or feel free to contact us.*

• others

SIMS (Secondary Ion Mass Spectrometry) is used to accurately quantify the concentration distribution of Ge in Si(1-x)Gex films with a compositional gradient used in devices, in the depth direction. When analyzing Si(1-x)Gex films with SIMS, there are two issues that must be resolved. The first issue is that the secondary ion intensity of Ge relative to Si changes significantly with variations in the compositional ratio, so it is necessary to determine the relative sensitivity factor for each compositional ratio. The second issue is that the sputtering rate at each analysis point changes due to variations in the compositional ratio of Si and Ge, so it is necessary to establish the relationship between the compositional ratio and the sputtering rate. To solve these two issues, samples with known concentrations were analyzed at more than three points, and the RSF and sputtering rates were determined. *For more details, please refer to the PDF document or feel free to contact us.*

• others

SIMS (Secondary Ion Mass Spectrometry) is a device that irradiates the surface of a sample with a primary ion beam (O2+, Cs+) of several kV, analyzes the sputtered secondary ions by mass spectrometry, and can analyze trace impurities in the sample. Using the Q-pole SIMS (ULVAC: ADEPT-1010), we used a compound semiconductor sample of Al0.28Ga0.72As/GaAs, which was deposited by molecular beam epitaxy (MBE) in 50 nm layers, to determine the depth resolution. By optimizing the primary ion beam, we were able to enhance the depth resolution to 5 nm based on the slope of the 27Al profile at the interface between the Al0.28Ga0.72As film and the GaAs film. *For more details, please refer to the PDF document or feel free to contact us.*

• others

This report presents the results of analyzing a sample in which aluminum was injected into a SiC substrate using SIMS (ULVAC: ADEPT-1010). Due to the high insulating properties of the SiC substrate, accurate measurements cannot be made when the primary ion beam is irradiated onto the sample surface because charge accumulates. Therefore, by simultaneously irradiating a low-energy electron beam onto the area where the primary ion beam is applied, charge accumulation is suppressed, allowing for accurate measurements. Since the mass number of aluminum (27) is adjacent to that of silicon (28), which is the matrix, we were able to lower the detection limit to 6×10^15 [atoms/cm3] by optimizing the measurement conditions. *For more details, please refer to the PDF document or feel free to contact us.*

• others

This page presents the results of analyzing samples where arsenic was ion-implanted into silicon using SIMS (ULVAC: ADEPT-1010). Arsenic (75As) interferes with the matrix silicon and residual gases such as oxygen or hydrogen, forming complex molecules (e.g., 29Si30Si16O), which requires a mass resolution of 3190. In Q-pole type SIMS, the mass resolution is only around 200, making mass separation difficult. However, by measuring the complex molecular ions of silicon and arsenic, we were able to lower the detection limit to 2×10^15 [atoms/cm3]. [Implantation Conditions] ■ Energy: 700 [keV] ■ Dose: 1×10^15 [atoms/cm2] *For more details, please refer to the PDF document or feel free to contact us.

• others

Impurity analysis is important in semiconductor material development, and secondary ion mass spectrometry (SIMS), which allows for high-sensitivity analysis, is suitable for this purpose. We present the results of analyzing a sample where aluminum was ion-implanted into silicon using SIMS (ULVAC: ADEPT-1010). Since the mass number of aluminum is adjacent to that of silicon, measurement with a Q pole-type SIMS is challenging. However, by optimizing the measurement conditions, we were able to lower the detection limit to 1E16n/cm3. [Implantation Conditions] ■ Energy: 180 keV ■ Dose: 1E15n/cm2 (The dose value used is obtained from our RBS.) *For more details, please refer to the PDF document or feel free to contact us.

• others

Impurity analysis is important in material development, and secondary ion mass spectrometry (SIMS), which can perform high-sensitivity analysis, is suitable for this purpose. Here, we present the results of analyzing a sample in which boron was ion-implanted into silicon at an energy of 3 keV using SIMS (ULVAC: ADEPT-1010). It is particularly evident that the depth profile of boron can be accurately analyzed due to oxygen leakage. *For more details, please refer to the PDF document or feel free to contact us.*

• others