List of Semiconductor Manufacturing Equipment products
- classification:Semiconductor Manufacturing Equipment
1081~1110 item / All 5047 items
Reduce the workload from handling heavy objects! Here are five case studies that solved customer challenges! We are also accepting free consultations and tests tailored to your work!
- Other conveying machines
Presentation of explanatory materials on JIS and ISO standards. We propose suitable safety barriers from a rich product series! Free rental of demo kits.
- Other safety and hygiene products
Minimizes scattering with a unique spiral structure, achieving sharp edges and a masking-free coating.
- Coater
Simultaneously smooth out tiny bumps and remove relatively large bumps to achieve a glossy finish!
- Wafer processing/polishing equipment
A fiber-type device that radiates laser light over a wide area has appeared!
- Oxidation/Diffusion Device
Electronic Patent Technology Trend Survey Report on Thermal Management of SiC/GaN High-Temperature Semiconductors
- Other semiconductor manufacturing equipment
Supports liquids up to 100,000 CPS! We have a proven track record of spraying various products such as syringes and catheters.
- Coater
- Filling and bottling machines
- Other pumps
Easily replace with a cable swap for signals! Display the plasma display on an LCD display!
- Other semiconductor manufacturing equipment
A spin sheet device that can obtain high-quality substrates at a low cost.
- Other semiconductor manufacturing equipment
It is possible to select an optimal acceleration based on the viscosity of the resist coating agent! We also pay attention to maintainability.
- Photomask
Of course, the airflow control inside the chamber, along with the excellent maintainability of the resist spin coat unit.
- Photomask
Consistent processing of photolithography is possible.
- Photomask
Practical application of ultrasonic ultrasonic technology mounted on a spin sheet device!
- Semiconductor inspection/test equipment
Significant reduction in footprint and purchase costs, increased throughput, and substantial improvement in substrate quality.
- Other semiconductor manufacturing equipment
It is a long-selling model with cumulative sales of over 200 units in the series.
- Other semiconductor manufacturing equipment
During scanning, uniformity improvement through peripheral speed control is also possible! We have received numerous uses and have a wealth of experience compared to conventional methods.
- Etching Equipment
We will introduce the new model of the automatic scrub cleaning device for mass production, as well as the photo mask cleaning device with a cumulative total of over 200 units in the series.
- Other semiconductor manufacturing equipment
I want to shave, but I don't want to shave too much! If you have such concerns, our unique abrasive material, which combines moderate softness with strong resilience, will solve your problem!
- Wafer processing/polishing equipment
Explanation of various wheels! We also answer questions by application【Free Q&A collection】.
- Hand polishing and filing
- Other abrasives
- Wafer processing/polishing equipment
Easily achieve communication tests for 1553 signals! DBT300 Network Tester
- Tester
It is a high-performance vacuum deposition source that can be used as a high-temperature heating cell for vacuum applications, with an organic deposition source up to 800°C and a metal deposition sour...
- Evaporation Equipment
- Heating device
- Electric furnace
★☆★☆【MiniLab-026】Small Thin Film Experimental Device for R&D Development★☆★☆
This is a flexible thin film experimental device for R&D that eliminates waste by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug & Play feel, achieving compact size, space-saving design, simple operation, and high cost performance. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. There is also a glove box storage type available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many more options available. *Please first contact us with your required specifications, and we will configure the system to meet your needs.
<30W Low power - Etching control precision 10mW Achieving damage-free and delicate etching processing.
- Etching Equipment
★☆★☆【MiniLab-026】Small Thin Film Experimental Device for R&D Development★☆★☆
This is a flexible thin film experimental device for R&D that eliminates waste by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug & Play feel, achieving compact size, space-saving design, simple operation, and high cost performance. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. There is also a glove box storage type available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many more options available. *Please first contact us with your required specifications, and we will configure the system to meet your needs.
◉ Short time: Easily conduct graphene synthesis experiments in just 30 minutes per batch. ◉ High-precision temperature and pressure control. ◉ Sophisticated software.
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Introduction of various experimental devices for research and development in semiconductors, electronic devices, fuel cells, displays, and thin film experiments.
- Sputtering Equipment
- Evaporation Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Composite thin film experimental device nanoPVD-ST15A capable of mixed installation of vacuum deposition (metal and organic deposition sources) and sputtering cathodes.
- Sputtering Equipment
- Evaporation Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely supports various purposes from research and development to small-scale production.
- Annealing furnace
- Heating device
- Electric furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely accommodates various purposes from research and development to small-scale production.
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Low-cost minimum necessary configuration (manual control) applicable as tubular furnace, diffusion furnace, and thermal CVD.
- Oxidation/Diffusion Device
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Compact, space-saving, energy-efficient! High-performance ultra-high temperature experimental furnace for R&D.
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
CVD, PVD (evaporation, sputtering, etc.) high vacuum, ultra-high temperature plate heater for wafer and small chip heating with excellent uniformity and reproducibility.
- Other semiconductor manufacturing equipment
- Annealing furnace
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
High-temperature crucible heating heater for vacuum use. A versatile heater unit that can be used as an organic deposition source at 800°C and a metal deposition source at 1500°C.
- Evaporation Equipment
- Heating device
- Electric furnace
★☆★☆【MiniLab-026】Small Thin Film Experimental Device for R&D Development★☆★☆
This is a flexible thin film experimental device for R&D that eliminates waste by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug & Play feel, achieving compact size, space-saving design, simple operation, and high cost performance. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. There is also a glove box storage type available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many more options available. *Please first contact us with your required specifications, and we will configure the system to meet your needs.
An ultra-high temperature substrate heating stage that allows for substrate elevation, rotation, and RF/DC substrate bias all in one device! 'All-In-One' component.
- Sputtering Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.