List of CVD Equipment products
- classification：CVD Equipment
1～45 item / All 278 items
We provide comprehensive support from design to manufacturing and maintenance!
- Contract manufacturing
It won't break even after 1 million repetitions! A mat switch with reliable operation, high durability, and low price. Suitable for options in machine tools as well. Please consult us about delivery t...
- Sensors
Leave the latest ultrasonic cleaning to Sonosys.
- Photomask
- CMP Equipment
- CVD Equipment
The NHK program "The Wall of Truth" will feature a video of semiconductor wafer cleaning provided by our company.
We are pleased to announce that a video provided by Tick Corporation showcasing semiconductor wafer cleaning will be featured in the NHK program "The Wall of Truth." The theme for this episode is "The Truth of Water (tentative)." The program is scheduled to briefly introduce the process of cleaning wafers with pure water during semiconductor manufacturing. Our company offers cleaning and spraying technologies, including megasonic cleaning, for the semiconductor and electronic components sectors. We are truly honored that our footage will be utilized in the production of this NHK program. Broadcast schedule: September 12, 2026 (Saturday) from 8:30 PM to 8:59 PM (tentative). For more details about the program, please visit the official NHK "The Wall of Truth" page. https://www.nhk.jp/g/ts/N8JX1V6V69/ *Please note that the broadcast date and content may be subject to change.
A compact multi-thin film device that incorporates sputtering, deposition, electron beam (EB), and annealing thin film modules in a 60-liter volume chamber, suitable for various applications.
- Sputtering Equipment
- Evaporation Equipment
- CVD Equipment
Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates
Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)
CVD, PVD (evaporation, sputtering, etc.) high vacuum, ultra-high temperature plate heater for wafer and small chip heating with excellent uniformity and reproducibility.
- Other semiconductor manufacturing equipment
- Annealing furnace
- CVD Equipment
Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates
Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)
![[Nanofurnace] BWS-NANO Thermal CVD ...](https://image.mono.ipros.com/public/product/image/0d0/2000191194/IPROS99314670218218380543.jpeg?w=280&h=280){kind=small}
Hot Wall Type Thermal CVD Equipment: A compact, high-performance CVD device ideal for fundamental research.
- CVD Equipment
- Annealing furnace
- Heating device
Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates
Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)
◉ Short time: Easily conduct graphene synthesis experiments in just 30 minutes per batch. ◉ High-precision temperature and pressure control. ◉ Sophisticated software.
- CVD Equipment
Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates
Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)
Compact multi-film device that incorporates sputtering, deposition, EB, and annealing thin film modules in a 60L volume chamber, suitable for various applications.
- Sputtering Equipment
- Evaporation Equipment
- CVD Equipment
Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates
Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)
Plasma CVD equipment compatible with wafer sizes of Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities.
- CVD Equipment
Wafer Annealing Equipment [ANNEAL] Max 1000℃ APC Automatic Pressure Control MFC x3 System Compatible with Φ4 to 6 inch Substrates
Max 1000℃, MFC up to 3 systems, APC pressure control, compatible with substrates from 4" to a maximum of 6", high vacuum annealing device (<5 × 10-7 mbar) [ANNEAL] is a research and development annealing device capable of high-temperature heat treatment of substrates such as wafers in a stable process atmosphere. It allows high-temperature processing up to 1000℃ using a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of 3 systems, enabling firing operations with precisely adjusted process gas pressure (APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500℃ - C/C composite heater: Max 1000℃ (in vacuum, inert gas only) - SiC coating heater: Max 1000℃ (vacuum, inert gas, O2)
Mass production / NSG(SiO2)/PSG/BPSG deposition High-productivity / Continuous atmospheric pressure CVD (APCVD) system (for 12-inch wafers)
- CVD Equipment
Mass Production / NSG(SiO2)/PSG/BPSG deposition High-productivity/Continuous atmospheric pressure CVD (APCVD) system (for up to 8-inch wafers)
- CVD Equipment
4.5 generation glass substrate deposition system for rigid/flexible devices such as FPD.
- CVD Equipment
For mass production of crystalline Si solar cells/For NSG(SiO2)/PSG/BSG deposition High productivity/Continuous atmospheric pressure CVD (APCVD) system
- CVD Equipment
For prototyping, development, and small lot production For deposition of NSG(SiO2)/BSG/PSG/BPSG Batch processing (simultaneous processing of multiple substrates) APCVD system
- CVD Equipment
Small quantities and wide varieties. NSG(SiO2)/PSG/BPSG deposition. Single-wafer processing atmospheric pressure CVD (APCVD) system (Compatible with 8-inch SiC wafers)
- CVD Equipment
UHP/UHV, ultra-high purity, ultra-high vacuum, advanced metal sealing solutions for ultra-low temperature.
- Sealing
- CVD Equipment
- Etching Equipment
"Replace rubber O-ring to metal seal, Eliminate gas permeation and gas release." This can be possible with Delta Beta HNRV.
- Sealing
- CVD Equipment
If you want to eliminate gas permeation and gas release with a vacuum rubber O-ring, replace it with a spring-energized C-ring! 'Delta Beta HNRV'
The Delta Beta HNRV is originally designed with a low tightening pressure (Y) HELICOFLEX Delta seal combined with a specially processed internal spring, achieving replacement of rubber O-rings and improved performance. This metal seal is recommended for those who have concerns such as "wanting to eliminate gas permeation and gas release from rubber O-rings" and "unable to change the number or size of bolts on existing flanges." 【Features】 ■ Mainly for ultra-high vacuum use ■ Even lower design tightening pressure than before ■ Can be exchanged with elastomer O-rings ■ Two delta-shaped protrusions on the contact side of the cross-section It does not guarantee compatibility with existing flanges. Specifications for existing flanges are required. *For more details, please download the PDF or feel free to contact us.
Delta Seal (HNV HELICOFLEX(R) DELTA) achieves ultra-high vacuum! [Standardized for JIS V-groove flanges]
- Sealing
- CVD Equipment
- Etching Equipment
[Standardized for JIS V Groove Flange] Low Tightening Pressure Y 'Ultra High Vacuum Delta Seal' for Semiconductor Field
The Delta Seal (HNV HELICOFLEX(R) DELTA) has two delta-shaped protrusions on the contact side of the cross-section. The delta-shaped protrusions are designed to collapse and disappear during the compression of the outer casing when the flange groove is assembled. The design tightening pressure of the Delta Seal is lower compared to the Helicoflex seal, allowing for replacement with elastomer O-rings. Leak rate: *For circular shapes, 10⁻¹² Pa·m³/sec. (10⁻¹¹ atm·cm³/sec.) *Depends on the quality of the installation side. 【Features】 ■Two delta-shaped protrusions on the contact side of the cross-section ■Achieves ultra-high vacuum ■Has excellent elasticity and can be used at high temperatures ■Can be replaced with elastomer O-rings *For more details, please refer to the PDF document or feel free to contact us.
![[For the semiconductor industry] Re...](https://image.mono.ipros.com/public/product/image/884/2000678489/IPROS85630803233748329893.png?w=280&h=280){kind=small}
No need to change the size or number of existing bolts? A must-see for those struggling with "wanting to eliminate gas permeation and gas release from vacuum rubber O-rings" in semiconductor manufactu...
- Sealing
- CVD Equipment
- Electron beam lithography equipment
If you want to eliminate gas permeation and gas release with a vacuum rubber O-ring, replace it with a spring-energized C-ring! 'Delta Beta HNRV'
The Delta Beta HNRV is originally designed with a low tightening pressure (Y) HELICOFLEX Delta seal combined with a specially processed internal spring, achieving replacement of rubber O-rings and improved performance. This metal seal is recommended for those who have concerns such as "wanting to eliminate gas permeation and gas release from rubber O-rings" and "unable to change the number or size of bolts on existing flanges." 【Features】 ■ Mainly for ultra-high vacuum use ■ Even lower design tightening pressure than before ■ Can be exchanged with elastomer O-rings ■ Two delta-shaped protrusions on the contact side of the cross-section It does not guarantee compatibility with existing flanges. Specifications for existing flanges are required. *For more details, please download the PDF or feel free to contact us.
Replace with elastomer seals! Introducing our metal seals.
- Sealing
- CVD Equipment
- Semiconductor inspection/test equipment
Ideal for jig manufacturing! Providing aluminum frames up to 5,800mm long at a low cost.
- Other assembly machines
- CVD Equipment
- aluminum
Introducing one of the largest ultra-large DLC devices in the country!
- Processing Contract
- CVD Equipment
Simulation of vacuum exhaust and analysis of gas flow under low pressure conditions, analysis software compatible with rarefied gases (rarefied fluids).
- Contract Analysis
- Vacuum pump
- CVD Equipment
Chemical reactions caused by dilute gases can also be considered!
- CVD Equipment
- Wafer
- Other semiconductors
Features of "DSMC-Neutrals"!
- Vacuum Equipment
- Vacuum pump
- CVD Equipment
Total support for the installation and maintenance of semiconductor manufacturing equipment, from precision equipment installation compatible with clean rooms! Additional information.
- CVD Equipment
- Etching Equipment
- Resist Device
Achieving excellent film thickness distribution and reproducibility! Multi-chamber specifications and various custom-made options are also available.
- CVD Equipment
Controllable extensive membrane properties! Significant particle reduction and improved productivity.
- CVD Equipment
A porous silicon formation device that further applies conventional anodic oxidation equipment. Porous silicon wafers are formed depending on the chemical solution used and the current density.
- CVD Equipment
Sales of aluminum frames up to 5800 mm are possible! Additionally, we also accept "assembled products" such as exterior booths! Compatibility with other companies is also available.
- Other assembly machines
- CVD Equipment
- aluminum
Proposed simplifications for harness processing, introduced software for harness inspection, and achieved mass production!
- CVD Equipment
Improvement of gas usage efficiency with a low-capacity chamber! Achievements in providing support for mass production.
- CVD Equipment
Involved in the manufacturing of both development and mass production machines, achieving manufacturing and mass production in a short period!
- CVD Equipment
Cost reduction with functional aluminum frames and a wide range of accessories [Available not only as individual items but also as "assembled products" in flat or three-dimensional configurations!]
- Other assembly machines
- CVD Equipment
We relentlessly pursue customer satisfaction and technical expertise, contributing to society. We have extensive experience in contract manufacturing for OEMs and prototype machines.
- CVD Equipment
- Wafer processing/polishing equipment
- Other semiconductor manufacturing equipment
A film deposition platform for semiconductor wafers and advanced packaging capable of various film deposition treatments.
- Sputtering Equipment
- Etching Equipment
- CVD Equipment
Meeting the high cleanliness standards required in the semiconductor and medical device fields. We carry out everything from precision cleaning to packaging and assembly in a consistent clean environm...
- CVD Equipment
- Sputtering Equipment
- Resist Device
We have a track record of equipment such as 'plasma CVD systems for metal containers' and 'ICP-type MOCVD systems'!
- CVD Equipment
Coating is possible up to a 3L container! It contributes to reducing logistics costs through lightweight containers.
- CVD Equipment
A simple structure with high versatility! It adopts a unique plasma control method.
- CVD Equipment
The compatible film types are DLC, amorphous SiC, etc.! Equipped with a substrate heating mechanism (maximum set temperature: 500°C).
- Plasma Generator
- CVD Equipment
It is an engineering plastic that boasts excellent heat resistance, low water absorption rate, and outstanding sliding properties.
- CVD Equipment
- valve
- plastic
There is a track record of growing nitride semiconductor crystals on various semiconductor substrates. Customization is also possible according to your requests.
- CVD Equipment
- LED Module
- Wafer