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Analysis(si) - List of Manufacturers, Suppliers, Companies and Products | IPROS GMS

Last Updated： Aggregation Period:Jan 14, 2026～Feb 10, 2026
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Analysis Product List

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[Analysis Case] Analysis of H termination on Si surface

[Analysis Case] Analysis of H termination on Si surface

Qualitative and relative comparison of SiH and states on the Si surface due to differences in processing.

We compared the states of the Si surface after HF treatment and after ozone treatment. In the positive ion spectrum, the peak intensity of Si was different. The weaker Si intensity after HF treatment is due to Si being metallic, while the stronger Si intensity after UV-ozone cleaning and in the As Received state is due to Si being oxide-based. From the negative ion spectrum, fragment ions reflecting the surface state were detected: SiF, SiH, and Six series after HF treatment, and SiO2 series after UV-ozone cleaning and in the As Received state.

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Evaluation of semiconductor insulating films using STEM/EDS.

Evaluation of semiconductor insulating films using STEM/EDS.

STEM-EDS observation can confirm the shape and layer structure of the insulating film between semiconductor Poly-Si (polysilicon) and can be applied to investigate the causes of semiconductor defects.

In STEM (Scanning Transmission Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy), information regarding the composition of the sample (contrast images reflecting atomic numbers) can be obtained by scanning a finely focused electron beam over the sample. Additionally, the following features are available: - Observation of changes in diffraction contrast by varying the angle of incidence of the electron beam - Determination of whether the observation target is crystalline - Acquisition of information on crystal defects (dislocations, twins, etc.) within the crystal In this case, we introduce "Evaluation of Semiconductor Insulating Films using STEM-EDS." This case yielded no issues, but abnormal detection is also possible. Please take a moment to read the PDF materials. Furthermore, in addition to this STEM, our company excels in identifying defective areas by performing 3D reconstruction on specific regions of the sample in combination with FIB. We would be happy to provide a demonstration, so please feel free to reach out to us. Seiko Future Creation Official Website https://www.seiko-sfc.co.jp/ *Other materials are also available. If you request them through the inquiry button, we will send them to you.

  • Semiconductor inspection/test equipment
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  • Other semiconductors
  • Analysis

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Strain analysis of Si wafers

Strain analysis of Si wafers

The X-ray rocking curve method makes it possible to detect the strain of crystals without shape changes such as warping!

We would like to introduce our "Strain Analysis of Si Wafers." In the manufacturing process of semiconductor devices, residual stress generated during the thin grinding of wafers can lead to product failures, defects, and degradation. In this instance, we will perform mechanical polishing on Si wafers to reduce the surface crystallinity and evaluate the changes in crystallinity before and after polishing using X-ray rocking curve measurements. The X-ray rocking curve method can detect the strain of crystals without shape changes such as warping. 【Technical Overview】 ■ Rocking Curve Measurement - By fixing the detector at the angle position where diffraction occurs and rotating only the sample, the angular distribution of rotation that satisfies the diffraction condition can be measured. - The peak width and intensity of the angular distribution (rocking curve) reflect the variation in the tilt of the crystal planes, serving as an evaluation index for crystallinity. - For single crystals, small strains can be evaluated through high angular resolution measurements. *For more details, please download the PDF or feel free to contact us.

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OBIRCH analysis of SiC devices using short-wavelength lasers.

OBIRCH analysis of SiC devices using short-wavelength lasers.

Since semiconductors have different physical properties, new methods are required for failure analysis!

Our company conducts OBIRCH analysis of SiC devices using short-wavelength lasers. SiC is a power device with less energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In the backside OBIRCH analysis of SiC-SBD using short-wavelength lasers, localized melting damage was induced in the SiC Schottky barrier diode, resulting in the generation of pseudo-leaks. Locations of pseudo-leaks that could not be confirmed in the IR-OBIRCH analysis were clearly observed in the GL-OBIRCH analysis. *For more details, please refer to the PDF materials or feel free to contact us.

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Backside light emission analysis of SiC devices

Backside light emission analysis of SiC devices

Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device with less energy loss compared to conventional Si semiconductors and is attracting attention. However, due to its different physical properties from Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, destruction of the SiO2 film and damage to the SiC crystal were noted. *For more details, please refer to the PDF document or feel free to contact us.

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Power semiconductor analysis service

Power semiconductor analysis service

We will handle everything from the evaluation of the diffusion layer to physical analysis/chemical analysis regarding the malfunctioning part!

At Aites Co., Ltd., we offer analysis services for power semiconductors. Since our separation and independence from the Quality Assurance Department of IBM Japan's Yasu office in 1993, we have cultivated our own unique analysis and evaluation techniques. We can handle not only Si semiconductors but also the trending wide bandgap semiconductors. 【Features】 ■ OBIRCH analysis supports not only Si but also SiC and GaN devices ■ FIB processing is possible from either side ■ Visualization of the depletion layer formed at the PN junction ■ Elemental analysis such as EDS and EELS is also supported *For more details, please refer to the PDF document or feel free to contact us.

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  • Semiconductor inspection/test equipment
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Failure analysis of power devices

Failure analysis of power devices

We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for analysis - Backside polishing - We accommodate various sample forms. Si chip size: 200um to 15mm square ■ Defective area identification - Backside IR-OBIRCH analysis and backside emission analysis - IR-OBIRCH analysis: Supports up to 100mA/10V and 100uA/25V Emission analysis: Supports up to 2kV * We address a wide range of defect characteristics such as low-resistance shorts, micro leaks, and high voltage breakdown failures. ■ Pinpoint cross-sectional observation of leak areas - SEM/TEM - We select SEM or TEM observation based on the predicted defects and can conduct physical observation and elemental analysis of leak defect areas with precision.

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  • Transistor
  • Analytical Equipment and Devices
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[Analysis Case] Structural Analysis of Amorphous SiNx Films Using Molecular Dynamics Calculations

[Analysis Case] Structural Analysis of Amorphous SiNx Films Using Molecular Dynamics Calculations

Microscopic structural analysis of amorphous films is possible through simulation.

Amorphous SiNx (a-SiNx) films exhibit significant changes in physical properties from semiconductors to insulators due to compositional variations such as the N/Si ratio, making them suitable for a wide range of applications, including gate insulating films for transistors. On the other hand, experimental methods capable of atomic-level microscopic structural analysis for materials with non-crystalline amorphous structures are limited. Therefore, creating and analyzing amorphous structures with various compositions and densities through simulation becomes an effective tool. This document presents examples of structural analysis of a-SiNx films using molecular dynamics calculations.

  • Contract Analysis
  • Memory
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Transmission line analysis

Transmission line analysis

Investigate and implement measures for causes that may lead to malfunction on the circuit board, such as SI analysis.

Printed circuit board design technology utilizing transmission line simulation and EMI suppression support tools.

  • Printed Circuit Board
  • EMC countermeasure products
  • Prototype Services
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Combinatorial characteristic analysis

Combinatorial characteristic analysis

Conducting evaluations of electrical characteristics, optical characteristics, crystallinity, and composition!

In our "Combinatorial Property Analysis," we conduct various multi-point physical analyses according to your requests, based on compositional changes. In the example shown in the image, we formed Pt electrodes on a triangular 3-component combinatorial composition gradient sample of HfO2, Y2O3, and Al2O3 on a Si substrate, and performed electrical characteristics such as C-V and I-V to evaluate the high dielectric constant layer. The composition mapping from the top shows the dielectric constant, flat band potential, and leakage current, allowing for simultaneous evaluation of 246 compositions within a single sample. Please feel free to contact us when you need our services. 【Service Details】 ■ Electrical property evaluation such as C-V, I-V, semiconductor characteristics (room temperature to 400°C) ■ Optical property evaluation including transmittance measurement and spectroscopic ellipsometry ■ Crystallinity evaluation using microbeam XRD ■ Compositional evaluation using microbeam XRF, XPS, Auger spectroscopy, etc. *For more details, please refer to the PDF document or feel free to contact us.

  • Other contract services
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Analysis of good LCD panels

Analysis of good LCD panels

Check the quality status of LCD components and products! We will analyze the structures of the LCD panels using our analytical methods and expertise!

At AITES, we conduct quality analysis of LCD components/products, confirming the quality status of products based on our expertise in LCDs. The target panels include SEG-LCD, AM-LCD (a-Si TFT / LTPS TFT), OLED for automotive, monitors, mobile devices, and more. We perform quality analysis using our analytical methods on the various structures of liquid crystal panels. 【Analysis Content (Excerpt)】 <Reliability/Lighting Tests> ■ Classification - Reliability Tests - Lighting Inspections ■ Analytical Methods - Oven Drive Tests - Visual Inspection *For more details, please refer to the PDF document or feel free to contact us.

  • Analysis Services
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Analysis of semiconductor diffusion layers using sMIM

Analysis of semiconductor diffusion layers using sMIM

Detect changes in concentration as changes in C! The dC/dV signal can also be obtained, which is effective for analyzing the diffusion layer.

At Aites Co., Ltd., we conduct analysis of semiconductor diffusion layers using sMIM. The Scanning Microwave Impedance Microscopy (sMIM) features a signal that has a linear correlation with dopant concentration. sMIM scans the sample by irradiating microwaves from the tip of a metal probe attached to an SPM and measures the reflected waves to obtain sMIM-C images that have a linear correlation with the concentration of the diffusion layer. The C component of Zs obtained from reflectivity consists of oxide film capacitance and depletion layer capacitance, and by utilizing the fact that the depletion layer width changes depending on impurity concentration, we detect changes in concentration as changes in C. [Application Examples] ■ sMIM-C: Visualization of diffusion layers and semi-quantitative evaluation of dopant concentration for various semiconductor devices such as Si, SiC, GaN, InP, GaAs, etc. ■ dC/dV: Evaluation of diffusion layer shape, determination of p/n polarity, visualization of depletion layers. *For more details, please refer to the PDF materials or feel free to contact us.

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Simulation analysis

Simulation analysis

Introducing examples of countermeasures! We propose suitable designs based on trust and proven results.

Our company handles everything from single-sided boards to high-layer count boards and build-up boards, including high-difficulty board designs, and we also support transmission path and noise simulation verification. We propose optimal designs based on trust and proven results. Please feel free to consult us when you need assistance. 【Analysis (Partial)】 <SI Analysis> ■ Items: Reflection (crosstalk) / Timing / Transmission characteristics (S-parameters), etc. ■ Tools: Hyper LynxSI, SIwave <PI Analysis> ■ Items: Voltage drop (DC IR Drop) ■ Countermeasure examples: - Board wiring between the IC serving as the power supply and the IC receiving the power - Identifying layout modification areas such as adjusting power wiring width *For more details, please refer to the PDF document or feel free to contact us.

  • Circuit board design and manufacturing
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What can be understood from first-principles calculations.

What can be understood from first-principles calculations.

We will introduce the target of analysis, the physical property information obtained, and examples of analysis.

Analysis targets (Information such as composition and crystal structure is required for calculations) ? The main analysis targets are systems with periodicity, such as crystals. ? Calculations for systems with amorphous structures, surfaces, and interfaces are also possible. Obtained physical property information ? Crystal structure parameters (lattice constants, atomic arrangements, etc.) ? Electronic structure and spin states (charge distribution, band structure, Fermi surface, magnetic moments, etc.) ? Chemical bonding states such as covalent bonds and ionic bonds ? Stable structures and defect formation energies when lattice defects such as atomic substitutions and vacancies are present ? Formation energies and atomic arrangements of surfaces and interfaces ? Information related to chemical reactions, such as activation energies and structures of intermediates ? Electronic response characteristics such as dielectric functions, electrical resistivity, and Seebeck coefficients ? Thermodynamic quantities of solids, such as specific heat ? Various spectroscopic spectra (XPS, XAFS, etc.)

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Infineon IGBT6 Structure Analysis and Process Analysis Report

Infineon IGBT6 Structure Analysis and Process Analysis Report

Analyzing products using Infineon's TRENCHSTOP(TM) technology!

We offer the "Infineon IGBT6 (IKQ75N120CS6XKSA1) Structural Analysis Report and Process Analysis Report." This report includes a comparison of the characteristics of IGBT4 (HighSpeed3), IGBT5, and IGBT6. Please feel free to contact us if you have any requests. 【Report Contents】 ■ Structural Analysis Report - Package appearance, X-ray observation, package cross-section analysis, chip structure analysis, EDX material analysis - Electrical characteristic measurements (breakdown voltage, IC-VCE, capacitance characteristics) - Comparison of characteristics with HighSpeed3 IGBT and IGBT5 ■ Process Analysis Report - Manufacturing process flow and device characteristic analysis report based on structural analysis results *For more details, please download the PDF or feel free to contact us.

  • Other services
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[Case Study] Achieved 100% in-house production through implementation!

[Case Study] Achieved 100% in-house production through implementation!

Improving convenience and speed while significantly reducing costs! Achieved with the no-code data integration tool ASTERIA Warp and OutSystems.

Sakata Seed Corporation has been engaged in the breeding of Sakata brand varieties for over a century and also handles seedlings, gardening supplies, and agricultural materials. The company has implemented peer-to-peer file transfer tools in each system to connect its core system, which holds sales information, procurement information, and various other achievements, with files scattered across different departments. However, there are numerous new integration needs, and if each integration is carried out using file transfer tools, it becomes complicated and unmanageable, leading to increasing costs for product maintenance and system integration. Therefore, it was decided to replace the file transfer tools with EAI tools to achieve complete in-house development of integrations. [Challenges] ■ Complexity ■ High costs ■ Delays in information sharing *For more details, please refer to the PDF document or feel free to contact us.

  • Software (middle, driver, security, etc.)
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Analysis of the etch pit shape on SiC wafers

Analysis of the etch pit shape on SiC wafers

Introducing a case where etch pits formed on SiC wafers were observed using a 3D X-ray microscope (X-ray CT)!

In order to promote the spread of power semiconductors, the development of low-defect SiC wafers is underway. X-ray CT is a method that visualizes the shape of materials in three dimensions non-destructively and allows for quantitative evaluation. In the PDF document, you can see the CT images obtained when observing the etched pits formed on SiC wafers using a 3D X-ray microscope (X-ray CT). [Overview] ■ Shape analysis of etched pits using X-ray CT *For more details, please refer to the PDF document or feel free to contact us.

  • Structural Analysis
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FEMFAT Basic Module: Fatigue Strength Analysis of Variable Loads

FEMFAT Basic Module: Fatigue Strength Analysis of Variable Loads

Calculate the fatigue life and fatigue limit safety factor for repeated loads and alternating loads.

When evaluating the fatigue strength of a set of stress amplitudes, mean stress, and constant stress, FEMFAT basic is an ideal tool. With FEMFAT basic, you can calculate the fatigue life or fatigue limit safety factor of components subjected to repeated or alternating loads. It simultaneously considers various influencing factors on fatigue and analyzes joining structures such as seam welding and spot welding along with the base material, allowing for appropriate fatigue life predictions to be obtained concurrently. It comes standard with a database of over 400 materials. Additionally, when creating new material data, you can use the "Material Generator" to create the necessary material data set for FEMFAT even from limited material strength data. *For more details, please download the PDF or contact us.*

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  • Structural Analysis
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Extrusion Resin Analysis (CAE)

Extrusion Resin Analysis (CAE)

The entire process from design to the creation of a 3D flow model, flow analysis, and molding is testable!

At Axmolding, specialists handle the process, and we can take on everything from consulting for development and design to execution as a whole. Our company can test a complete flow from design to creating 3D models of flow paths, flow analysis, and actual molding. We are capable of creating 3D models of extrusion flow paths that are complex and have many curved surfaces. Additionally, we use Japanese-made software from HASL for analysis. 【Analysis Software】 ■ Materialfi - Resin calculation formula definition ■ FLATSimulator - For T-die analysis ■ SpiralSimulator - For round die analysis ■ SingleSrewSimulator - For single screw analysis ■ FlowSimulator3D - For 3D, irregular shapes, and multilayer analysis For more details, please refer to our catalog or feel free to contact us.

  • Extrusion Machine
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3D Skeleton Analysis with a Single Camera: "VisionPose Singe3D"

3D Skeleton Analysis with a Single Camera: "VisionPose Singe3D"

Compatible with Unity, iOS/iPadOS, and Android! A posture estimation AI engine that enables easy motion capture without markers.

"VisionPose Single3D" is an SDK (Software Development Kit) for a posture estimation AI engine that captures 3D coordinates with a single camera and detects human skeletal information in real-time. It allows for easy motion capture without the need for calibration. Utilizing technology that estimates 3D coordinates from 2D images, it detects skeletal information with up to 30 key points in 2D coordinates and up to 17 key points in 3D coordinates. The skeletal data obtained from the analysis can be used for commercial purposes as well as for research and development, regardless of the application or genre. ■ Features - Easily obtain 3D coordinates with a single camera - Compatible with Unity, iOS/iPadOS, and Android - No restrictions on usage, including commercial use - Comes with two immediately usable standard applications └ Real-time skeletal visualization sample app "BodyAndColor" └ Video & still image analysis app "VP Analyzer" *Excluding iOS/iPad and Android versions - Additional training is possible *Additional training is optional

  • Image analysis software
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Technical Information Magazine 201901-02 Nanometer Scale Local Structure Analysis

Technical Information Magazine 201901-02 Nanometer Scale Local Structure Analysis

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** Spectroscopic analysis techniques utilizing near-field light localized at the tips of metal chips are highly anticipated methods for analyzing chemical structures in the nanometer range. Techniques such as tip-enhanced Raman spectroscopy and near-field Raman spectroscopy are representative methods, and various studies have been conducted on their principles and applications. This paper presents examples of their application in material analysis and discusses their practicality for material characterization. **Table of Contents** 1. Introduction 2. Crystal structure analysis of CNTs using TERS 3. Stress analysis at the SiO2/SiC interface using SNOM-Raman 4. Conclusion

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FlowDesigner reverse analysis!

FlowDesigner reverse analysis!

A thermal fluid analysis tool that goes beyond the limits of trial and error.

In general thermal fluid analysis software, designers only input their design proposals as conditions to simulate airflow and temperature distribution. Therefore, if the initial design conditions do not achieve the intended design target values, the designer must repeatedly reconsider the improvement conditions themselves. To find improvement proposals that can meet the design goals, it is necessary to conduct a vast number of analyses. How can one find a design proposal that achieves the design goals within the limited design review period? FlowDesigner’s inverse analysis function is the only simulation software that provides the answer!

  • Thermo-fluid analysis
  • Analysis

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Report: Detailed Structural Analysis of Application Processor Logic

Report: Detailed Structural Analysis of Application Processor Logic

This is a detailed structural analysis of the Mediatek MT6592 octa-core (8-core).

This report is a detailed structural analysis of the Mediatek MT6592 octa-core (8-core) application processor. The MT6592 features an ARM Cortex-A7 processor and is marketed as a "true octa-core" SoC, equipped with a 4-core ARM MaliTM GPU, supporting Full HD displays, cameras up to 16 million pixels, multi-mode cellular modems, and dual-band 802.11n Wi-Fi, among other features. The MT6592 is manufactured using TSMC's HPM CMOS process with an 8-layer metal (7 Cu, 1 Al) structure, high-k metal gate (HKMG), and a gate length of 28nm. 【Features】 ○ Crystal orientation of the transistor channel <110> ○ Hafnium oxide (HfO2) material for the gate insulating film ○ Dual work function metal gate ○ nMOS (NiSi) and pMOS (NiSiGe) source/drain regions, and low-k interlayer insulating film For more details, please contact us or download the catalog.

  • Analysis Services
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Analysis service

Analysis service

The analysis lead time is as short as half a day! We offer comprehensive support for mold design, flow analysis, and mold manufacturing.

The "Analysis Service" provides comprehensive support from design assistance to analysis and manufacturing. We respond to a wide variety of needs, including proposal examination, mold concepts, rough material models, detailed design, and reverse engineering of mold components. We make predictions about flow patterns and defects using analysis data, fully utilizing the experience of skilled designers to propose optimal plans and cooling systems. Additionally, we quickly develop countermeasures based on feedback from casting results, assisting in the early launch of products. We have introduced numerous examples of our analysis services in our catalog, so please take a look via PDF download. 【Features】 ■ Comprehensive support for mold design, flow analysis, and mold manufacturing ■ Short analysis lead time (as short as half a day) *For more details, please refer to the PDF materials or feel free to contact us.

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  • Analysis Services
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