Last Updated： Aggregation Period:Jul 16, 2025～Aug 12, 2025
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Investigate and implement measures for causes that may lead to malfunction on the circuit board, such as SI analysis.
Printed circuit board design technology utilizing transmission line simulation and EMI suppression support tools.
Conducting evaluations of electrical characteristics, optical characteristics, crystallinity, and composition!
In our "Combinatorial Property Analysis," we conduct various multi-point physical analyses according to your requests, based on compositional changes. In the example shown in the image, we formed Pt electrodes on a triangular 3-component combinatorial composition gradient sample of HfO2, Y2O3, and Al2O3 on a Si substrate, and performed electrical characteristics such as C-V and I-V to evaluate the high dielectric constant layer. The composition mapping from the top shows the dielectric constant, flat band potential, and leakage current, allowing for simultaneous evaluation of 246 compositions within a single sample. Please feel free to contact us when you need our services. 【Service Details】 ■ Electrical property evaluation such as C-V, I-V, semiconductor characteristics (room temperature to 400°C) ■ Optical property evaluation including transmittance measurement and spectroscopic ellipsometry ■ Crystallinity evaluation using microbeam XRD ■ Compositional evaluation using microbeam XRF, XPS, Auger spectroscopy, etc. *For more details, please refer to the PDF document or feel free to contact us.
Introducing examples of countermeasures! We propose suitable designs based on trust and proven results.
Our company handles everything from single-sided boards to high-layer count boards and build-up boards, including high-difficulty board designs, and we also support transmission path and noise simulation verification. We propose optimal designs based on trust and proven results. Please feel free to consult us when you need assistance. 【Analysis (Partial)】 <SI Analysis> ■ Items: Reflection (crosstalk) / Timing / Transmission characteristics (S-parameters), etc. ■ Tools: Hyper LynxSI, SIwave <PI Analysis> ■ Items: Voltage drop (DC IR Drop) ■ Countermeasure examples: - Board wiring between the IC serving as the power supply and the IC receiving the power - Identifying layout modification areas such as adjusting power wiring width *For more details, please refer to the PDF document or feel free to contact us.
The X-ray rocking curve method makes it possible to detect the strain of crystals without shape changes such as warping!
We would like to introduce our "Strain Analysis of Si Wafers." In the manufacturing process of semiconductor devices, residual stress generated during the thin grinding of wafers can lead to product failures, defects, and degradation. In this instance, we will perform mechanical polishing on Si wafers to reduce the surface crystallinity and evaluate the changes in crystallinity before and after polishing using X-ray rocking curve measurements. The X-ray rocking curve method can detect the strain of crystals without shape changes such as warping. 【Technical Overview】 ■ Rocking Curve Measurement - By fixing the detector at the angle position where diffraction occurs and rotating only the sample, the angular distribution of rotation that satisfies the diffraction condition can be measured. - The peak width and intensity of the angular distribution (rocking curve) reflect the variation in the tilt of the crystal planes, serving as an evaluation index for crystallinity. - For single crystals, small strains can be evaluated through high angular resolution measurements. *For more details, please download the PDF or feel free to contact us.
Introducing a case where etch pits formed on SiC wafers were observed using a 3D X-ray microscope (X-ray CT)!
In order to promote the spread of power semiconductors, the development of low-defect SiC wafers is underway. X-ray CT is a method that visualizes the shape of materials in three dimensions non-destructively and allows for quantitative evaluation. In the PDF document, you can see the CT images obtained when observing the etched pits formed on SiC wafers using a 3D X-ray microscope (X-ray CT). [Overview] ■ Shape analysis of etched pits using X-ray CT *For more details, please refer to the PDF document or feel free to contact us.
