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Analysis(si) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Sep 03, 2025～Sep 30, 2025
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Analysis Product List

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[Analysis Case] Analysis of H termination on Si surface

[Analysis Case] Analysis of H termination on Si surface

Qualitative and relative comparison of SiH and states on the Si surface due to differences in processing.

We compared the states of the Si surface after HF treatment and after ozone treatment. In the positive ion spectrum, the peak intensity of Si was different. The weaker Si intensity after HF treatment is due to Si being metallic, while the stronger Si intensity after UV-ozone cleaning and in the As Received state is due to Si being oxide-based. From the negative ion spectrum, fragment ions reflecting the surface state were detected: SiF, SiH, and Six series after HF treatment, and SiO2 series after UV-ozone cleaning and in the As Received state.

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  • Contract Analysis

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Evaluation of semiconductor insulating films using STEM/EDS.

Evaluation of semiconductor insulating films using STEM/EDS.

STEM-EDS observation can confirm the shape and layer structure of the insulating film between semiconductor Poly-Si (polysilicon) and can be applied to investigate the causes of semiconductor defects.

In STEM (Scanning Transmission Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy), information regarding the composition of the sample (contrast images reflecting atomic numbers) can be obtained by scanning a finely focused electron beam over the sample. Additionally, the following features are available: - Observation of changes in diffraction contrast by varying the angle of incidence of the electron beam - Determination of whether the observation target is crystalline - Acquisition of information on crystal defects (dislocations, twins, etc.) within the crystal In this case, we introduce "Evaluation of Semiconductor Insulating Films using STEM-EDS." This case yielded no issues, but abnormal detection is also possible. Please take a moment to read the PDF materials. Furthermore, in addition to this STEM, our company excels in identifying defective areas by performing 3D reconstruction on specific regions of the sample in combination with FIB. We would be happy to provide a demonstration, so please feel free to reach out to us. Seiko Future Creation Official Website https://www.seiko-sfc.co.jp/ *Other materials are also available. If you request them through the inquiry button, we will send them to you.

  • Semiconductor inspection/test equipment
  • Contract Analysis
  • Other semiconductors

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OBIRCH analysis of SiC devices using short-wavelength lasers.

OBIRCH analysis of SiC devices using short-wavelength lasers.

Since semiconductors have different physical properties, new methods are required for failure analysis!

Our company conducts OBIRCH analysis of SiC devices using short-wavelength lasers. SiC is a power device with less energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In the backside OBIRCH analysis of SiC-SBD using short-wavelength lasers, localized melting damage was induced in the SiC Schottky barrier diode, resulting in the generation of pseudo-leaks. Locations of pseudo-leaks that could not be confirmed in the IR-OBIRCH analysis were clearly observed in the GL-OBIRCH analysis. *For more details, please refer to the PDF materials or feel free to contact us.

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  • Analysis Services
  • Contract Analysis

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Backside light emission analysis of SiC devices

Backside light emission analysis of SiC devices

Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device with less energy loss compared to conventional Si semiconductors and is attracting attention. However, due to its different physical properties from Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, destruction of the SiO2 film and damage to the SiC crystal were noted. *For more details, please refer to the PDF document or feel free to contact us.

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  • Analysis Services
  • Contract Analysis

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Power semiconductor analysis service

Power semiconductor analysis service

We will handle everything from the evaluation of the diffusion layer to physical analysis/chemical analysis regarding the malfunctioning part!

At Aites Co., Ltd., we offer analysis services for power semiconductors. Since our separation and independence from the Quality Assurance Department of IBM Japan's Yasu office in 1993, we have cultivated our own unique analysis and evaluation techniques. We can handle not only Si semiconductors but also the trending wide bandgap semiconductors. 【Features】 ■ OBIRCH analysis supports not only Si but also SiC and GaN devices ■ FIB processing is possible from either side ■ Visualization of the depletion layer formed at the PN junction ■ Elemental analysis such as EDS and EELS is also supported *For more details, please refer to the PDF document or feel free to contact us.

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  • Analysis Services
  • Contract Analysis
  • Semiconductor inspection/test equipment

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Business Information: TECHinsights(TM)

Business Information: TECHinsights(TM)

Optimal performance, minimal cost, and rapid response!

TechInsights (SI Corporation) has 15 years of experience and expertise in the investigation of innovative circuit design and process technology through TECHinsights solutions. Technological innovation brings both strategic opportunities and threats in the battle to gain market share, revenue growth, and competitive advantage. The TechInsights brand of SI Corporation provides detailed analyses of product features and the underlying technologies, as well as related market trends, to enable technology companies to establish a competitive position, assess the viability of entering new markets, and solve technical issues. 【TECHinsights(TM)】 - Competitive analysis - Process analysis - Cost analysis - Design analysis including CircuitVision reports - Smart card security analysis For more information, please contact us or download the catalog.

  • Patents

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Failure analysis of power devices

Failure analysis of power devices

We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for analysis - Backside polishing - We accommodate various sample forms. Si chip size: 200um to 15mm square ■ Defective area identification - Backside IR-OBIRCH analysis and backside emission analysis - IR-OBIRCH analysis: Supports up to 100mA/10V and 100uA/25V Emission analysis: Supports up to 2kV * We address a wide range of defect characteristics such as low-resistance shorts, micro leaks, and high voltage breakdown failures. ■ Pinpoint cross-sectional observation of leak areas - SEM/TEM - We select SEM or TEM observation based on the predicted defects and can conduct physical observation and elemental analysis of leak defect areas with precision.

  • Contract Analysis
  • Transistor
  • Analytical Equipment and Devices

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[Analysis Case] Structural Analysis of Amorphous SiNx Films Using Molecular Dynamics Calculations

[Analysis Case] Structural Analysis of Amorphous SiNx Films Using Molecular Dynamics Calculations

Microscopic structural analysis of amorphous films is possible through simulation.

Amorphous SiNx (a-SiNx) films exhibit significant changes in physical properties from semiconductors to insulators due to compositional variations such as the N/Si ratio, making them suitable for a wide range of applications, including gate insulating films for transistors. On the other hand, experimental methods capable of atomic-level microscopic structural analysis for materials with non-crystalline amorphous structures are limited. Therefore, creating and analyzing amorphous structures with various compositions and densities through simulation becomes an effective tool. This document presents examples of structural analysis of a-SiNx films using molecular dynamics calculations.

  • Contract Analysis
  • Memory

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Transmission line analysis

Transmission line analysis

Investigate and implement measures for causes that may lead to malfunction on the circuit board, such as SI analysis.

Printed circuit board design technology utilizing transmission line simulation and EMI suppression support tools.

  • Printed Circuit Board
  • EMC countermeasure products
  • Prototype Services

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Analysis of good LCD panels

Analysis of good LCD panels

Check the quality status of LCD components and products! We will analyze the structures of the LCD panels using our analytical methods and expertise!

At AITES, we conduct quality analysis of LCD components/products, confirming the quality status of products based on our expertise in LCDs. The target panels include SEG-LCD, AM-LCD (a-Si TFT / LTPS TFT), OLED for automotive, monitors, mobile devices, and more. We perform quality analysis using our analytical methods on the various structures of liquid crystal panels. 【Analysis Content (Excerpt)】 <Reliability/Lighting Tests> ■ Classification - Reliability Tests - Lighting Inspections ■ Analytical Methods - Oven Drive Tests - Visual Inspection *For more details, please refer to the PDF document or feel free to contact us.

  • Analysis Services
  • Contract Analysis

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Analysis of semiconductor diffusion layers using sMIM

Analysis of semiconductor diffusion layers using sMIM

Detect changes in concentration as changes in C! The dC/dV signal can also be obtained, which is effective for analyzing the diffusion layer.

At Aites Co., Ltd., we conduct analysis of semiconductor diffusion layers using sMIM. The Scanning Microwave Impedance Microscopy (sMIM) features a signal that has a linear correlation with dopant concentration. sMIM scans the sample by irradiating microwaves from the tip of a metal probe attached to an SPM and measures the reflected waves to obtain sMIM-C images that have a linear correlation with the concentration of the diffusion layer. The C component of Zs obtained from reflectivity consists of oxide film capacitance and depletion layer capacitance, and by utilizing the fact that the depletion layer width changes depending on impurity concentration, we detect changes in concentration as changes in C. [Application Examples] ■ sMIM-C: Visualization of diffusion layers and semi-quantitative evaluation of dopant concentration for various semiconductor devices such as Si, SiC, GaN, InP, GaAs, etc. ■ dC/dV: Evaluation of diffusion layer shape, determination of p/n polarity, visualization of depletion layers. *For more details, please refer to the PDF materials or feel free to contact us.

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  • Contract Analysis
  • Other contract services

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Combinatorial characteristic analysis

Combinatorial characteristic analysis

Conducting evaluations of electrical characteristics, optical characteristics, crystallinity, and composition!

In our "Combinatorial Property Analysis," we conduct various multi-point physical analyses according to your requests, based on compositional changes. In the example shown in the image, we formed Pt electrodes on a triangular 3-component combinatorial composition gradient sample of HfO2, Y2O3, and Al2O3 on a Si substrate, and performed electrical characteristics such as C-V and I-V to evaluate the high dielectric constant layer. The composition mapping from the top shows the dielectric constant, flat band potential, and leakage current, allowing for simultaneous evaluation of 246 compositions within a single sample. Please feel free to contact us when you need our services. 【Service Details】 ■ Electrical property evaluation such as C-V, I-V, semiconductor characteristics (room temperature to 400°C) ■ Optical property evaluation including transmittance measurement and spectroscopic ellipsometry ■ Crystallinity evaluation using microbeam XRD ■ Compositional evaluation using microbeam XRF, XPS, Auger spectroscopy, etc. *For more details, please refer to the PDF document or feel free to contact us.

  • Other contract services
  • Analysis Services

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Simulation analysis

Simulation analysis

Introducing examples of countermeasures! We propose suitable designs based on trust and proven results.

Our company handles everything from single-sided boards to high-layer count boards and build-up boards, including high-difficulty board designs, and we also support transmission path and noise simulation verification. We propose optimal designs based on trust and proven results. Please feel free to consult us when you need assistance. 【Analysis (Partial)】 <SI Analysis> ■ Items: Reflection (crosstalk) / Timing / Transmission characteristics (S-parameters), etc. ■ Tools: Hyper LynxSI, SIwave <PI Analysis> ■ Items: Voltage drop (DC IR Drop) ■ Countermeasure examples: - Board wiring between the IC serving as the power supply and the IC receiving the power - Identifying layout modification areas such as adjusting power wiring width *For more details, please refer to the PDF document or feel free to contact us.

  • Circuit board design and manufacturing
  • Analysis Services

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Infineon IGBT6 Structure Analysis and Process Analysis Report

Infineon IGBT6 Structure Analysis and Process Analysis Report

Analyzing products using Infineon's TRENCHSTOP(TM) technology!

We offer the "Infineon IGBT6 (IKQ75N120CS6XKSA1) Structural Analysis Report and Process Analysis Report." This report includes a comparison of the characteristics of IGBT4 (HighSpeed3), IGBT5, and IGBT6. Please feel free to contact us if you have any requests. 【Report Contents】 ■ Structural Analysis Report - Package appearance, X-ray observation, package cross-section analysis, chip structure analysis, EDX material analysis - Electrical characteristic measurements (breakdown voltage, IC-VCE, capacitance characteristics) - Comparison of characteristics with HighSpeed3 IGBT and IGBT5 ■ Process Analysis Report - Manufacturing process flow and device characteristic analysis report based on structural analysis results *For more details, please download the PDF or feel free to contact us.

  • Other services

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[Case Study] Achieved 100% in-house production through implementation!

[Case Study] Achieved 100% in-house production through implementation!

Improving convenience and speed while significantly reducing costs! Achieved with the no-code data integration tool ASTERIA Warp and OutSystems.

Sakata Seed Corporation has been engaged in the breeding of Sakata brand varieties for over a century and also handles seedlings, gardening supplies, and agricultural materials. The company has implemented peer-to-peer file transfer tools in each system to connect its core system, which holds sales information, procurement information, and various other achievements, with files scattered across different departments. However, there are numerous new integration needs, and if each integration is carried out using file transfer tools, it becomes complicated and unmanageable, leading to increasing costs for product maintenance and system integration. Therefore, it was decided to replace the file transfer tools with EAI tools to achieve complete in-house development of integrations. [Challenges] ■ Complexity ■ High costs ■ Delays in information sharing *For more details, please refer to the PDF document or feel free to contact us.

  • Software (middle, driver, security, etc.)

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