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Analytical Equipment Product List and Ranking from 224 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated： Aggregation Period:Jun 03, 2026～Jun 30, 2026
This ranking is based on the number of page views on our site.

Analytical Equipment Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Jun 03, 2026～Jun 30, 2026
This ranking is based on the number of page views on our site.

  1. FOSS JAPAN Co., Ltd. Tokyo//Testing, Analysis and Measurement
  2. 一般財団法人材料科学技術振興財団　MST Tokyo//Testing, Analysis and Measurement
  3. サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K. Tokyo//Testing, Analysis and Measurement
  4. 4 ビーエルテック Tokyo//Testing, Analysis and Measurement
  5. 5 null/null
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Analytical Equipment Product ranking

Last Updated： Aggregation Period:Jun 03, 2026～Jun 30, 2026
This ranking is based on the number of page views on our site.

  1. Sake FT-IR component analysis device "OenoFoss2" FOSS JAPAN Co., Ltd.
  2. iCAP PRO Series ICP Emission Spectrometer サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K.
  3. Alcohol analysis device for sake Alcolyzer3001 SAKE
  4. 4 Laser Ablation ICP-MS System サーモフィッシャーサイエンティフィック株式会社／Thermo Fisher Scientific K.K.
  5. 5 Total Organic Carbon Automatic Analyzer "TOC-200 Series" 東レエンジニアリングDソリューションズ

Analytical Equipment Product List

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[Analysis Case] Evaluation of Adhesive Tape Residue

[Analysis Case] Evaluation of Adhesive Tape Residue

We will identify the surface adsorbate components using TOF-SIMS.

Residue from adhesive tape can cause poor adhesion and peeling during the manufacturing process. When residue is suspected to be the cause of defects, TOF-SIMS, which can analyze the composition and distribution of surface contaminants, is effective. We will present a case where the surface of a silicon wafer was adhered with adhesive tape and measured with TOF-SIMS after peeling it off.

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[Analysis Case] Depth Direction Analysis of TFT Wiring Intersection Using SSDP-SIMS

[Analysis Case] Depth Direction Analysis of TFT Wiring Intersection Using SSDP-SIMS

Analysis using SSDP is also possible for microdomains and glass substrates.

An example is shown where secondary ion mass spectrometry (SIMS) was used to analyze the intersection (4μm×10μm) of the data signal wiring and gate electrode wiring of a commercially available TFT LCD from the substrate side (SSDP-SIMS). By measuring from the substrate side (SSDP-SIMS), it becomes possible to provide data free from the influence of high-concentration layers or metal films on the surface side.

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[Analysis Case] Component Analysis of Hair Roots

[Analysis Case] Component Analysis of Hair Roots

Visualization of biological components such as cholesterol and fatty acids using TOF-SIMS.

The hair roots of human hair (both shed hair and pulled hair) were pressed against a Si wafer, and imaging measurements (surface analysis) were conducted on the transferred components. Shed hair shows a strong tendency for ■K and ●phospholipids to be present only at the tip of the hair root. Additionally, it is believed that the entire hair root contains ■CnHmCOOH (n=17–31) fatty acids (derived from human sebum), ●amide components derived from keratin plugs, ◆nitrogen-containing organic acids with a mass of 500–700, and ◆organic substances with a mass around 800 that are aggregated. However, the organic substances containing two COOH groups derived from human sebum, which are observed in pulled hair, show a weak tendency.

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[Analysis Case] Observation of Pigment and Dye Dispersion

[Analysis Case] Observation of Pigment and Dye Dispersion

Micron-order imaging measurement using TOF-SIMS.

We investigated the distribution of the blue pigment "Cu phthalocyanine" dispersed on the polyethylene surface. TOF-SIMS analysis allows us to capture the distribution of organic materials with a pigment size of 1μm.

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[Analysis Case] High-Sensitivity Analysis of Light Elements in Semiconductor Substrates Using SIMS

[Analysis Case] High-Sensitivity Analysis of Light Elements in Semiconductor Substrates Using SIMS

SIMS analysis allows for the evaluation of elements such as H, C, N, O, and F down to levels below 1 ppm.

It is possible to detect H, C, N, and O in semiconductor substrates at concentrations below 1 ppm (approximately 5E16 atoms/cm3) and F at concentrations below 1 ppb (approximately 5E13 atoms/cm3) using this method. Examples of measurements in actual FZ-Si (Figure 1) and the background levels of III-V semiconductors are presented (Table 2). In addition to III-V semiconductors, standard samples have been prepared for various materials such as metal films and insulating films, enabling highly sensitive quantitative analysis. This method is ideal for bulk analysis of various materials, including semiconductor substrates, and for evaluating the contamination of gas components during semiconductor processes.

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[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide

[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide

TEM-EELS enables elemental identification and chemical state analysis in micro-regions.

Titanium dioxide (TiO2), used in electronic materials, catalytic materials, ultraviolet absorbers, and photocatalysts, exists in two forms with the same composition but different crystal structures: anatase and rutile. We conducted measurements on a polycrystalline TiO2 sample with a thickness of 20 nm, deposited on a Si substrate (Photo 1), using an electron beam probe focused down to approximately 1 nmΦ (FWHM). The EELS spectra obtained from the sample match the standard spectra of anatase TiO2 for both Ti and O (Figures 1 and 2).

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[Analysis Case] Contamination Assessment of Si Wafer Bevel Area

[Analysis Case] Contamination Assessment of Si Wafer Bevel Area

It is possible to evaluate both metal components and organic components simultaneously.

In semiconductor device manufacturing, from the perspective of improving yield, it is necessary to enhance the cleanliness of the backside of the wafer and to remove substances that remain on the bevel area of the wafer. In this study, we conducted TOF-SIMS analysis of the bevel inclined surface to evaluate the distribution of contamination (Figure 2). Additionally, by comparing the mass spectra of the adhered substances with those of the normal area and the contamination source, we found that the adhered substances matched the metal (Cr) and organic components of the contamination source. TOF-SIMS can capture the contamination generation process in the bevel area (edge and inclined surface).

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[Analysis Case] Component Analysis of Organic EL Devices

[Analysis Case] Component Analysis of Organic EL Devices

TOF-SIMS component analysis of slope-polished organic multilayer structure samples.

We conducted TOF-SIMS analysis on an organic EL device (Figure 1) estimated to be formed from four layers of different organic compounds (or organometallic complexes) using XPS. For multilayer structural samples, depth profiling analysis using sputtering is also performed; however, in this case, we created a slope surface to expose each layer without breaking the bonds of the constituent components. Molecular weight-related ions and fragment ions presumed to be Alq3, NPD, and CuPc were obtained, confirming that TOF-SIMS analysis of the slope surface is an effective method for component analysis of organic multilayer films.

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[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS

[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS

Evaluation of dopant distribution and junctions is possible even in extremely shallow regions.

The miniaturization of devices has increased the need for evaluating the depth distribution of impurities in extremely shallow regions. To conduct an accurate assessment, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. Figure 1 shows examples of measurements of Si wafers implanted with BF2+ 1 keV, P+ 1 keV, and As+ 1 keV, using a primary ion beam energy of 250 eV to 300 eV.

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[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS

[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS

Can be evaluated with high reproducibility.

Due to the miniaturization of devices, it is necessary to evaluate the depth distribution of impurities in extremely shallow regions. To perform an accurate evaluation, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. In this study, the relative standard deviation of the surface density of B calculated from six measurements conducted over multiple days using a 1 keV oxygen ion beam on Si wafers implanted with B+ at low energy was found to be less than 3%, demonstrating that high reproducibility can be achieved in the evaluation of extremely shallow impurity distributions, similar to conventional SIMS analysis.

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[Analysis Case] Evaluation of the Depth Direction State of Stainless Steel Passive Film

[Analysis Case] Evaluation of the Depth Direction State of Stainless Steel Passive Film

Waveform analysis and evaluation of the depth distribution of bonding states by Ar sputtering.

XPS allows for the evaluation of bonding states of oxidized components (components bonded with oxygen) and metallic components (components bonded with metals). Additionally, by using argon ion sputtering, it is also possible to evaluate bonding states in the depth direction. * Regarding the passive film on the surface of stainless steel (with a thickness of several tens of nm to several hundred nm), the results of the above measurements showed that (1) there are many Fe oxidized components on the surface side, (2) Cr oxidized components exist below the Fe oxide layer, and (3) Ni oxidized components are almost nonexistent. * Since it includes changes in bonding states due to sputtering, the evaluation is primarily based on relative comparisons.

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[TDS] Thermal Desorption Gas Analysis Method

[TDS] Thermal Desorption Gas Analysis Method

A mass spectrometry method that allows monitoring of gases generated by vacuum heating/warming at different temperatures, with high sensitivity for detecting hydrogen and water.

TDS is a mass spectrometry method that allows monitoring of gases generated by vacuum heating/ramping at different temperatures. The TDS spectrum represents temperature on the horizontal axis and ion intensity on the vertical axis. This enables comparison of the amount of gas released and the desorption temperatures. Additionally, due to the vacuum environment, hydrogen and water can be analyzed with high sensitivity. - It is possible to understand the relationship between the gases desorbed from the sample, the pressure, and the temperature at which they are generated. - Since only the sample can be heated, the background is low, allowing for high-sensitivity analysis of low-mass molecules such as hydrogen, water, oxygen, and nitrogen. - It is possible to estimate the composition of the gases generated from the sample and perform quantitative analysis (counting the number of molecules).

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X-ray Absorption Fine Structure (XAFS)

X-ray Absorption Fine Structure (XAFS)

XAFS is a method for analyzing the absorption spectrum obtained by irradiating a substance with X-rays.

- It is possible to evaluate the local structure (interatomic distances, coordination numbers) and chemical state (valence, coordination structure) around the target elements in the sample. - Measurements can be conducted regardless of the environment (high temperature, high pressure, atmosphere). - Measurements can be performed on various sample forms (solid, liquid, gas, thin films, amorphous materials, etc.). - A wide applicable concentration range (from major component elements to trace elements). - Non-destructive measurement. - Depending on the measurement method, it is possible to conduct measurements that are sensitive to the surface as well as bulk measurements.

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[XRF] X-ray fluorescence analysis method

[XRF] X-ray fluorescence analysis method

This is a method for conducting elemental analysis and compositional analysis by detecting fluorescent X-rays generated by irradiating with X-rays and spectrally analyzing them using energy or a spectroscopic crystal.

X-ray fluorescence analysis (XRF) is a method that detects fluorescent X-rays generated by irradiated X-rays and performs elemental and compositional analysis by spectrally analyzing the energy and using a spectroscopic crystal. - The entire energy measurement range (from Na to U) can be measured simultaneously in a short time. - Suitable for the analysis of unknown samples. - Non-destructive analysis. - No pre-treatment is required except for special samples, allowing for easy analysis in the atmosphere. - Elemental analysis of large samples that cannot be moved is possible with a handheld device.

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[Analysis Case] Investigation of Causes of Peeling in Plating and Coating

[Analysis Case] Investigation of Causes of Peeling in Plating and Coating

Identification of contamination sources on the cleavage surface using TOF-SIMS.

When delamination occurs, it is important to identify the components that have worsened the adhesion at the interface. By using a peeling process to physically delaminate at the interface of interest and measuring the components present on that surface with TOF-SIMS, it is possible to investigate the cause of delamination. TOF-SIMS detects secondary ions that are ionized while maintaining the structure of organic materials, allowing us to obtain information about the origin of the components present at the delamination surface, making it effective for investigating the causes of delamination and the process. Measurement methods: TOF-SIMS, peeling, disassembly Product fields: LSI, memory, manufacturing equipment, components Analysis purposes: Evaluation of chemical bonding states, failure analysis, defect analysis For more details, please download the materials or contact us.

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[Analysis Case] Component Identification of Foreign Substances Considering Thermal History

[Analysis Case] Component Identification of Foreign Substances Considering Thermal History

Proposal for the use of standard samples with aligned thermal history.

Polymeric materials such as polypropylene (PP) react with oxygen and moisture in the atmosphere when heated, causing changes in their molecular structure. Therefore, when foreign substances or contaminants may be present in polymeric materials, it is necessary to use standard materials processed in the same environment as the measurement sample for comparison data. To investigate how the PP standard material changes due to heat treatment (200°C for 30 minutes), FT-IR and TOF-SIMS measurements were conducted.

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[Analysis Case] Heating Degradation Test of Lithium-Ion Secondary Batteries

[Analysis Case] Heating Degradation Test of Lithium-Ion Secondary Batteries

Samples after thermal degradation can be evaluated using LC/MS/MS, TOF-SIMS, TEM+EDX, etc.

The development of lithium-ion secondary batteries faces challenges such as improving performance, extending lifespan, and enhancing reliability. To address these challenges, it is important to understand the degradation mechanisms of the batteries. In this study, we conducted a heating degradation test to evaluate the degradation mechanisms caused by temperature. After the heating degradation test, we assessed samples that showed significant capacity reduction using LC/MS/MS for the electrolyte, TOF-SIMS for the anode surface, and FIB-TEM+EDX for the cross-section of the anode.

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[Analysis Case] Qualitative Analysis of Organic EL Layer

[Analysis Case] Qualitative Analysis of Organic EL Layer

Suppression of component alteration through measurement surface finishing under atmosphere control.

We conducted qualitative analysis of the components by measuring the surface under controlled conditions, minimizing alterations due to processing, on a commercially available digital audio player equipped with an organic EL display.

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[Analysis Case] Distribution Evaluation of Chitosan by TOF-SIMS

[Analysis Case] Distribution Evaluation of Chitosan by TOF-SIMS

Visualization of pharmaceutical components using TOF-SIMS.

Chitosan is used in a wide range of fields such as medicine, food, cosmetics, and clothing due to its antibacterial and moisturizing properties. Some cotton swabs, which are everyday items, contain chitosan to provide antibacterial effects. Therefore, we evaluated the chitosan contained in cotton swabs using TOF-SIMS, which allows for visualization through mapping and component assessment through spectral measurement.

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[Analysis Case] Investigation of the Causes of Wettability Changes Due to Plasma Treatment

[Analysis Case] Investigation of the Causes of Wettability Changes Due to Plasma Treatment

Evaluation of the top surface of modified layers of polymers, resins, and films using TOF-SIMS is possible.

On the surface of cell culture dishes, treatments are performed to convert hydrophobic plastic surfaces to hydrophilic ones in order to enhance cell adhesion. In this study, the surfaces of dishes that underwent hydrophilic treatment were evaluated using XPS and TOF-SIMS, revealing an increase in OH and CHO groups. By conducting quantitative evaluations with XPS and qualitative evaluations with TOF-SIMS, it is possible to capture how the surface has changed.

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[Analysis Case] Evaluation of Film-Forming Component Encroachment on the Back Surface of the Wafer

[Analysis Case] Evaluation of Film-Forming Component Encroachment on the Back Surface of the Wafer

Quantitative evaluation of metal components is possible near the bevel area.

In semiconductor device manufacturing, it is necessary to remove metals remaining on the backside of the wafer from the perspective of improving yield, and it is important to quantitatively understand the amount of metal components remaining. To investigate the concentration distribution of metals remaining on the backside within a range of 500 µm from the bevel area, we conducted evaluations using TOF-SIMS. TOF-SIMS has the spatial resolution to detect metal components only near the bevel area, and by using standard samples with known concentrations, it is possible to quantitatively calculate the concentrations.

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[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS

[Analysis Case] Depth Profile Analysis of Dopant Elements in SiC Using SIMS

It is possible to evaluate the depth distribution of B, Al, N, P, and As in SiC with high sensitivity.

SiC is used as a power device material due to its physical properties, but unlike Si, the diffusion of dopants after thermal treatment following ion implantation is difficult. Therefore, it is necessary to control the distribution in the depth direction through multi-step ion implantation. SIMS analysis can evaluate impurity concentrations in the depth direction with high sensitivity (below ppm), making it suitable for assessing the distribution of dopant elements in SiC. It is also possible to evaluate the distribution of light elements (such as H, C, O, F, etc.). Please contact us regarding any elements you would like to evaluate.

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[Analysis Case] Evaluation of Silicon (Si) Oxide Film State

[Analysis Case] Evaluation of Silicon (Si) Oxide Film State

It is possible to capture molecular information of inorganic substances in the depth direction using TOF-SIMS.

In depth-direction analysis of molecular information obtained by TOF-SIMS, (1) the depth resolution is good, (2) it is possible to distinguish the chemical states of inorganic materials such as oxides, nitrides, fluorides, carbides, alloys, and metals, (3) evaluation of trace states is possible, (4) monitoring of OH is possible, (5) relative comparisons between samples (film thickness, composition) are possible, and (6) image analysis allows for a visual capture of the distribution of states at the surface level of a few nanometers. We will summarize the results of natural oxide films and oxide films. Measurement method: TOF-SIMS Product field: LSI, memory Analysis purpose: evaluation of chemical bonding states, evaluation of composition distribution, thickness of corrosion layers For more details, please download the materials or contact us.

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[Analysis Case] Evaluation of Impurities in Metal Wires

[Analysis Case] Evaluation of Impurities in Metal Wires

Visualizing the in-plane distribution of impurities such as atmospheric components with a field equivalent to SEM.

SIMS analysis can be applied to various shapes of samples beyond wafers and substrates. In this case study, we will introduce an example of evaluating the distribution of impurities in a wire. The results of evaluating the impurity distribution in the depth direction from the side of the wire (Figure 2) indicate that the impurity profiles of H, O, F, S, and Cl vary in intensity with depth, suggesting that they are localized within the wire. The elemental mapping of the wire cross-section (Figure 3) confirmed the localization of impurities within the wire.

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[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

[Analysis Case] SIMS Analysis of Compound Layered Structure Samples

Analysis is possible after selectively removing the compound layer through preprocessing.

In SIMS analysis of layered structure samples, there is a concern that in structures where the layer of interest is located at a deep position from the sample surface, the depth resolution may degrade due to the influence of the concentration distribution of the upper layers. In such cases, it is effective to remove the upper layers through pretreatment before analysis. This document presents an example of selectively and progressively removing layers from InP/InGaAs-based SHBT (Single Heterojunction Bipolar Transistor) samples.

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[Analysis Case] SSDP-SIMS Analysis on SiC Substrates

[Analysis Case] SSDP-SIMS Analysis on SiC Substrates

It is possible to obtain the dopant concentration profile from the SiC substrate side.

In the SiC power MOSFET (Figure 1), the concentration distribution of the dopant element Al in the SiC beneath the gate pad was evaluated using SIMS from both the surface side and the backside (Figure 2). Regardless of the direction of analysis, the distribution beyond a depth of approximately 0.5 μm also matches well, suggesting that the spread of the Al concentration distribution reflects the actual elemental distribution rather than being measurement-induced. SSDP-SIMS analysis is possible even on hard substrates like SiC, which are difficult to process. Please feel free to consult us first.

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[Analysis Case] Evaluation of the Cleaning Effect of Organic Ingredients

[Analysis Case] Evaluation of the Cleaning Effect of Organic Ingredients

You can measure the 300mm wafer as it is.

TOF-SIMS has the characteristics of simultaneously evaluating organic and inorganic materials, being capable of analyzing small areas with high sensitivity at the very surface, and allowing evaluation while still in the form of 300mm wafers, making it effective for residue investigations during cleaning processes. We will introduce an analysis case of the removal effect of organic contamination on Si surfaces. TOF-SIMS analysis was conducted on samples where amine-based organic materials were confirmed to be in extremely small quantities by XPS. Even in small areas, it is possible to measure components in such extremely small amounts.

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[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

[Analysis Case] Composition Analysis of GaN-based LED Structures using SIMS

Capable of evaluating the composition of the main elemental components of GaN-based LEDs in the depth direction.

In general, the quantification of major elements with concentrations exceeding a certain percentage in SIMS is considered to be low. However, by using the M Cs+ (M: element of interest) detection mode with Cs+ as the primary ion, it is possible to determine the compositional distribution of major element elements in the depth direction. An example of depth compositional evaluation for Al, Ga, and In in GaN-based LED structures is presented.

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[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

[Analysis Case] SSDP-SIMS Analysis of Mg in GaN-based LED Structure

It is possible to obtain the impurity profile in the GaN-based LED structure from the backside.

In GaN-based LEDs, it is said that the diffusion of the dopant element Mg into the active layer leads to a decrease in luminous efficiency. This document presents a case study where SIMS analysis was conducted on GaN-based LED structural samples from both the surface side and the sapphire substrate side (back side) to evaluate the depth profile of Mg concentration.

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Quantification of Hydrogen Bonding States in SiN Films

Quantification of Hydrogen Bonding States in SiN Films

Quantification of Si-H and N-H in SiN films using infrared absorption method.

It is possible to determine the concentrations of Si-H and N-H in SiN films through FT-IR analysis. Although it is also possible to determine hydrogen concentration using analyses such as SIMS, this provides the total hydrogen concentration and does not allow for the separate determination of hydrogen bonded to Si and hydrogen bonded to N. In FT-IR, the Si-H stretching vibration and N-H stretching vibration have peaks at different positions, allowing us to use these peaks to determine the respective hydrogen concentrations. Below are examples of analyses that determined the concentrations of Si-H and N-H in SiN films on Si substrates.

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