テルモセラ・ジャパン List of Products and Services

**Flexible System** The MiniLab thin film experimental device series allows for easy construction of a compact device configuration without waste, even as a customized product, by incorporating suitable components (such as deposition sources and stages) and control modules according to the required deposition methods and materials from a wide range of options. By configuring the device with a modular control unit in a Plug&Play manner, the application range expands, enabling various thin film process experiments. The MiniLab series is a high cost-performance system that caters to a wide range of applications from research and development to small-scale production. **Small Footprint & Space Saving** - Single Rack Type (MiniLab-026): 590(W) x 590(D)mm - Dual Rack Type (MiniLab-060): 1200(W) x 590(D)mm - Triple Rack Type (MiniLab-125): 1770(W) x 755(D)mm **Excellent Operability & Intuitive Operation Screen** Windows PC or 7” touch panel. Easy operation that does not require advanced skills, while ensuring maximum safety.

This is a flexible R&D thin film experimental device that achieves minimal waste, compact size, simple operation, and high cost performance by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug&Play feel. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 4, organic materials x4), and it can also be equipped with a substrate heating stage for annealing and plasma etching. A glove box storage type is also available (*specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Maximum substrate size: Φ6 inch ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 sources) ◉ Organic evaporation source: 1cc or 5cc ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Dry etching ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous deposition from 2 sources, HiPIMS, automatic thin film controller, custom substrate holder, substrate rotation/lifting, substrate heating, and many other options available. *Please first contact us with your required specifications, and we will configure the system to meet your needs.

Compact/Space-saving, High-spec Thin Film Experiment Equipment Can be combined with the following deposition sources: - Resistance heating deposition source x up to 4 - Organic deposition source x up to 4 - Electron beam deposition - 2-inch magnetron sputtering cathode x 4 - Plasma etching: Can be installed in either the main chamber or the load lock chamber 【Small Footprint & Space-saving】 - Dual rack type (MiniLab-060): 1200(W) x 590(D)mm 【Excellent Operability & Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation regardless of skill level, with maximum safety considerations.

The ML-080, composed of a D-type box chamber with a volume of 80 liters and dimensions of 400(W)x400(D)x570(H)mm, features a higher chamber compared to the 060 model, resulting in a longer TS distance adjustment range and improved film uniformity during deposition on large-diameter substrates. It is an optimal model for vacuum deposition and is a higher-end version of the ML-060, which can also accommodate a load lock mechanism. Like the 060, it is compact yet supports a wide range of applications including resistance heating deposition (for metals, insulators, and organic materials), EB deposition, RF/DC/Pulse DC compatible magnetron sputtering, RIE plasma etching, and annealing. - Maximum substrate size: Φ10 inch - Resistance heating deposition sources: up to 4 sources - Organic deposition sources: up to 4 sources - Magnetron sputtering cathodes: 4 sources - Electron beam deposition - Substrate heating stage (standard 500℃, max 1000℃) - *Plasma etching / <30W soft etching *Plasma etching can be installed in both the main chamber and the load lock chamber.

MiniLab-080 is a glove box model designed to accommodate an 80ℓ large volume chamber within a glove box bench. It features a slide-open and close chamber that maximizes the use of the workbench, and a rear-opening door designed with maintenance in mind. Samples processed can be consistently handled in a controlled environment inside the glove box without exposure to the atmosphere or moisture. For specifications of the GB model, please refer to the gas purification unit. - Maximum substrate size: Φ10 inch - Resistance heating evaporation source x up to 4 sources - Organic evaporation source x up to 4 sources - Magnetron sputtering cathode x 4 sources - Electron beam evaporation - Substrate heating stage (standard 500℃, Max 1000℃) - Plasma etching / <30W soft etching

Continuous multilayer film, simultaneous film formation (2-6 element simultaneous film formation: RF, DC can be freely switched from HMI) High-power RF, DC power supplies, and pulse DC power supplies can be flexibly configured with multi-cathodes using our unique 'Plasma Switching Relay' module, allowing for versatile applications. High-temperature substrate heating stage (double jacket water-cooled) options: -1) Max 600℃ (lamp heating) -2) Max 1000℃ (C/C composite) -3) Max 1000℃ (SIC coating) Reverse sputtering stage in load lock: -1) 300W, or -2) Soft-Etching (<30W) System main control: 'IntelliDep' control system Windows PC (or TP HMI) interface All operations are centrally managed from a single HMI screen.

In the film formation process of 2D materials such as OLED (Organic EL), OPV (Organic Photovoltaic), OTFT (Organic Thin Film Transistor), graphene, and TMD (Transition Metal Dichalcogenides), it is necessary to handle samples in an inert gas atmosphere isolated from oxygen and moisture. The MiniLab-026/090-GB achieves a "oxygen and moisture-free" experimental environment for organic film applications by housing the PVD chamber within the GB, creating a compact and space-saving environment. 【Features】 ◉ A series of processes such as PVD film formation, spin coating, and hot plate baking can be performed seamlessly within the GB without exposing them to the outside air. ◉ Space-saving: The chamber does not protrude from the back, so it does not take up space. 【MiniLab Models】 ◉ MiniLab-026 (26ℓ volume): Metal/insulator/organic material deposition, sputtering, plasma etching, annealing ◉ MiniLab-090 (90ℓ volume): Metal/insulator/organic material deposition, EB deposition, sputtering, plasma etching, annealing * Please first contact us with your required specifications, and we will configure the system according to your needs.

【Features】 - Compatible with high vacuum - Available in sizes Φ2 inch, Φ3 inch, Φ4 inch - Adopts a clamp ring type, no bonding required - Excellent maintainability, easy target replacement - Rich options including shutters, chimney ports, gas injection, high-strength magnets for magnetic materials, etc. - Compatible with various flange sizes for connection

High-Performance RF/DC Magnetron Sputtering Equipment ● Achievable pressure: 5 x 10^-5 Pa (*1 x 10^-4 Pa in the fastest 30 minutes!) ● Sputter cathodes x 3: Automatic continuous multilayer film, simultaneous deposition from 2 sources ● Film uniformity ±3% ● Various options: Substrate rotation and elevation, substrate heating (Max 500℃), cathodes for magnetic materials, and more ◉ nanoPVD can be used for various purposes, including up to 3 sputter sources + 3 systems (MFC control), expansion of RF/DC PSU (up to 2 power supplies), continuous multilayer film, and simultaneous deposition from 2 sources (RF/DC or DC/DC only). - Insulating films - Conductive films - Compounds, etc. 【Main Features】 ◉ Compatible substrates: Up to Φ4 inch ◉ 2" cathodes x up to 3 sources ◉ 7" touch panel for easy operation with PLC automatic process control ◉ APC automatic pressure control ◉ High-precision process control with MFC ◉ 1 Ar gas system (standard) + N2, O2 expandable up to 3 systems ◉ USB port for connection to Windows PC, allowing the creation and storage of recipes for up to 1000 layers and 50 films. Data logging on PC ◉ Other various options available

High-performance organic source LTE (up to 4 sources) with excellent temperature responsiveness/stability for organic materials such as OLED, OPV, and OTFT, and a metal deposition source TE (up to 2 sources) that allows for easy exchange and maintenance. It can operate in manual mode, as well as in automatic mode for continuous multilayer film deposition and simultaneous film formation. Despite its compact size, it achieves performance comparable to that of large standalone machines without sacrificing basic performance, film quality, uniformity, or operability. Additionally, it features fully automatic control via a simple touch panel with PLC. The user-friendly HMI allows anyone to operate it intuitively without requiring complicated operating procedures. It comes with remote software "IntelliLink," which connects to a Windows PC via USB cable, enabling monitoring of the device's operating status, log saving, online/offline recipe creation and storage, and fault analysis. This compact vacuum deposition system is designed to maximize the effective use of limited development and lab space while also excelling in maintenance.

【nanoETCH】Model. ETCH5A Achieves fine and damage-free etching processing with low output RF etching at <30W (control accuracy 10mA). A jointly developed product with the graphene research group at the University of Manchester, led by Nobel Prize winners who discovered graphene in 2010.

◉ High efficiency and high precision process control using cold wall method ◉ Rapid heating: 1100℃ in approximately 3 minutes ◉ High precision temperature control: ±1℃ ◉ High precision APC automatic pressure control system: 3 gas lines (Ar, H2, CH4) ◉ Standard recipe included for graphene production ◉ Compact size: 405(W) x 415(D) x 280(H)mm

High-temperature processing up to 1000°C is possible with a heating stage installed in a high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of three systems, allowing for firing operations at precisely adjusted process gas pressures (with the APC automatic process control system option). Additionally, there are many options available, including a front viewport, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature. - Halogen lamp heater: Max 500°C - C/C composite heater: Max 1000°C (only in vacuum or inert gas) - SiC coating heater: Max 1000°C (in vacuum, inert gas, O2)

◉ Tabletop size, space-saving: 328(W) x 220(D) x 250(H)mm (*Reference value for 2-inch chamber) ◉ Customizable heater structure: - Cylindrical heater: For sample sintering in crucibles (for solid, powder, granule, and pellet-shaped samples) - Flat heater: For sintering Φ1" to Φ6" wafers and small chips ◉ Fast heating time of approximately 15 minutes (to 1500℃), cooling from 1500℃ to 100℃ in about 40 minutes (in vacuum and gas replacement atmosphere) ◉ High specifications & high cost performance ◉ Simple structure, excellent operability Various high-temperature heating experiments for small samples in laboratories, as well as research and development of new materials, can be easily conducted with simple operations. The main unit is compact yet suitable for research and development in a wide range of fields.

◾️ Max 2000℃ ◾️ Effective heating range: Φ6 to Φ8 inch single leaf type, or batch type (multi-stage 5-sheet cassette) ◾️ Heater control: 1 zone or 2 zones (cascade control) ◾️ Heater materials: ・C/C composite: Φ6 to Φ8 inch ・PG coating high-purity graphite: Φ6 to Φ8 inch ◾️ Operating atmosphere: ・Vacuum (1x10-2Pa), inert gas (Ar, N2) ◾️ PLC semi-automatic operation ・Automatic sequence control for vacuum/purge cycle and venting ・Full automatic operation (optional) ・Touch panel operation, allowing centralized management without dispersed control. ◾️ Process pressure control ・APC control (MFC flow, or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control, or manual adjustment of float meter/needle valve ◾️ PLOT screen graph display, CSV data output

Max 2900℃ (carbon furnace), Max 2400℃ (metal furnace) - Effective heating area 70 x 70 x 100 mm Supports various applications in new material development and advanced basic technology development sectors such as semiconductors, electronic components, fuel cells, and solar cells.

◉ Graphene, carbon nanotubes ◉ ZnO nanowires ◉ Insulating films such as SiO2 Others, compatible with a wide range of applications as a hot-wall thermal CVD system.

Manual lift vertical experimental furnace for small substrates from small samples to 3-inch wafers. A low-cost version of a vertical furnace ideal for basic experiments in university and corporate research labs. 【Applications】 ◉ Heat treatment for semiconductors, solar cells, fuel cells, electronic substrates, etc. ◉ Basic experiments: simple heat treatment experiments such as vertical tubular furnaces, oxidation diffusion furnaces, LPCVD, etc.

We introduce various experimental devices for research and development fields. ◉ Mini-BENCH Ultra-High Temperature Tabletop Furnace Max 2000℃ ◉ Mini-BENCH-prism Semi-Automatic Ultra-High Temperature Furnace Max 2000℃ ◉ MiniLab-WCF Ultra-High Temperature Wafer Firing Furnace Max 2000℃ In addition, we design and manufacture custom high-temperature furnaces for research and development. Others.

High vacuum compatible with a variety of heater material options. Applicable for various vacuum thin film experiments such as PVD (sputtering, evaporation, EB, etc.), CVD, high-temperature vacuum annealing, and high-temperature sample analysis substrate stages. Custom-made solutions are available to meet various specifications. 【Features】 ● Semi-custom product. Designed and manufactured according to your requirements. ● Easy replacement of spare heater wires. ● Easy installation and maintenance (M6 stud bolts, supports). ● Compatible with RF/DC bias and substrate rotation. 【Standard Accessories】 ● Thermocouple: wire type with alumina insulating sleeve. ● Mounting stud bolts. 【Options】 ● RF (150W)/DC (1KW) bias application. ● Non-standard heater wires (Nb, Mo, Pt/Re, WRe, etc.). ● Substrate holding clips. ● Mounting brackets. ● Substrate holders. ● Tapped holes for holder installation. ● Change of top plate material (PBN, quartz, carbon, Inconel, etc.). ● Additional thermocouples for overheating protection. ● Base flange, vacuum feedthrough.

This is a film deposition device and high vacuum compatible hot plate for vacuum thin film experiments, featuring a heater plate made of Inconel or BN plate, with excellent thermal radiation efficiency and superior uniformity. 【Product Lineup】 ◎ SH-IN (Inconel Plate): φ1.0 to φ6.1 inch for vacuum, O2, and active gases ◎ SH-BN (BN Plate, Mo Cover): φ2.1 to φ6.1 inch for vacuum and inert gases 【Features】 ◎ Maximum temperature 1100℃ (SH-BN), 850℃ (SH-IN) ◎ Rapid heating ◎ In-plane temperature distribution within ±2% ◎ Control accuracy and reproducibility ±1℃ ◎ Low cost ◎ Short delivery time (standard about 2 weeks *excluding flanges, rotation and vertical mechanisms, mounting brackets, etc.)

Semiconductors, electronic substrates, vacuum thin film process equipment and research and development【Ultra-high temperature substrate heating mechanism】 Compatible substrate sizes: Φ2 to 6 inches Can be used in vacuum (UHV compatible), inert gas, O2, and various process reactive gas atmospheres, etc. (Details to be discussed separately)

We will manufacture according to your requested specifications each time. This is a cylindrical heating unit that can be applied to various purposes in a high vacuum environment. We can custom-make it according to your needs, such as heating crucibles containing samples or heating metal, ceramic, and wire-shaped samples within the cylindrical heating range.

◉ Maximum operating temperature Max2000℃ ◉ Customizable heater structure: - Cylindrical heater: for sintering samples in a crucible (for solid, powder, granular, and pellet-shaped samples) - Flat heater: for sintering Φ1" to Φ6" wafers and small chip samples ◉ PLC semi-auto control All operations except for temperature adjustment are performed via a touch panel screen. No need for cumbersome valve opening/closing or pump activation; the "vacuum/purge" cycle before sintering and "vent" after sintering are performed automatically with one button. ◉ Up to 3 MFCs for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensuring safety during operation Monitoring for cooling water abnormalities, chamber temperature abnormalities, and overpressure abnormalities. Constructed from robust SUS material, the water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Dimensions: Width 603 x Depth 603 x Height 1,160mm (*installed within the rotary pump housing) Various heating experiments for small samples in laboratories, such as ultra-high temperature heating experiments and new material research and development, can be easily conducted. The main unit is compact yet suitable for research and development in a wide range of fields.

The nanoPVD-ST15A is a composite thin film experimental device that can simultaneously install a resistance heating deposition source, an organic deposition source, and a Φ2 inch magnetron sputtering cathode. It is bench-top sized and space-saving, making effective use of limited lab space. It is not a coater for microscope sample preparation; it can create high-quality thin films required for research and development applications such as electronic circuit boards, batteries, MEMS, and new material development. It is equipped with a maximum of three gas systems (process pressure APC automatic control), continuous automatic film formation (up to 20 layers), and simultaneous deposition from two sources, along with a variety of other features. Additionally, it offers options such as a substrate heating heater (up to 500°C) and a dry scroll pump. Vacuum pumping, film formation control, venting, recipe creation, as well as failure analysis and logging can all be operated via a 7" touch panel on the front, allowing for centralized management of operations. The IntelliLink software is included: it connects to a Windows PC via USB cable for remote monitoring, offline recipe creation, downloading and uploading, and log saving. It supports various applications in the development of new materials and new material development, as well as in advanced fundamental technology development sectors such as semiconductors, electronic components, fuel cells, and solar cells.

◉ Tabletop size, space-saving: 328(W) x 220(D) x 250(H) mm (*Reference value for 2-inch chamber) ◉ Customizable heater structure: - Cylindrical heater: For sample sintering in crucibles (for solid, powder, granular, and pellet-shaped samples) - Flat heater: For sintering Φ1" to Φ6" wafers and small chips ◉ Fast heating time of approximately 15 minutes (up to 1500℃), cooling from 1500℃ to 100℃ takes about 40 minutes (in vacuum and gas replacement atmosphere) ◉ High specification & high cost performance ◉ Simple configuration, excellent operability Various sample heating experiments, such as ultra-high temperature heating experiments for small samples in laboratories and new material research and development, can be easily conducted with simple operations. The main unit is compact yet suitable for research and development in various fields.

◉ Maximum operating temperature Max2000℃ ◉ Customizable heater structure: - Cylindrical heater: for sintering samples inside a crucible (for solid, powder, granule, and pellet-shaped samples) - Flat heater: for sintering Φ1" to Φ6" wafers and small chip samples ◉ PLC semi-auto control All operations except temperature adjustment are performed via a touch panel screen. No need for cumbersome valve opening/closing or pump activation; the "vacuum/purge" cycle before sintering and "vent" after sintering are automatically sequenced with one button. ◉ Up to 3 MFCs for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensuring safety during operation Monitoring for cooling water abnormalities, chamber temperature abnormalities, and overpressure abnormalities. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160mm (*installed inside rotary pump housing) Various sample heating experiments, such as ultra-high temperature heating of small samples in laboratories and new material research and development, can be easily conducted. The main unit is compact yet can be used for research and development in various fields.

◾️ Max 2000℃ ◾️ Effective heating range: Φ6 to Φ8 inch single leaf type, or batch type (multi-stage 5-sheet cassette) ◾️ Heater control: 1 zone or 2 zones (cascade control) ◾️ Heater material: ・C/C composite: Φ6 to Φ8 inch ・PG coated high purity graphite: Φ6 to Φ8 inch ◾️ Operating atmosphere: ・Vacuum (1x10-2 Pa), inert gas (Ar, N2) ◾️ PLC semi-automatic operation ・Automatic sequence control for vacuum/purge cycle and venting ・Fully automatic operation (optional) ・Touch panel operation, allowing centralized management without dispersed operations. ◾️ Process pressure control ・APC control (MFC flow, or automatic opening adjustment valve PID loop control) ・Maximum 3 systems of MFC flow automatic control, or manual adjustment of float meter/needle valve ◾️ PLOT screen graph display, CSV data output

High-temperature processing up to 1000°C is possible with the heating stage installed in the high vacuum water-cooled SUS chamber. A heat shield is installed inside the chamber to ensure safety through interlock. The mass flow controller can be expanded to a maximum of three systems, allowing for firing operations at precisely adjusted process gas pressures (with the APC automatic process control system option). Additionally, there are many options available, including a front view port, dry scroll pump, special substrate holder, and additional thermocouples. The heating stage inside the chamber has three variations depending on the process gas atmosphere and treatment temperature: - Halogen lamp heater: Max 500°C - C/C composite heater: Max 1000°C (only in vacuum or inert gas) - SiC coating heater: Max 1000°C (in vacuum, inert gas, O2)

Continuous multilayer film, simultaneous film formation (2-6 elements simultaneous film formation: RF, DC can be freely switched from HMI) High-power RF, DC power supplies, and pulse DC power supplies can be flexibly configured for multi-cathode using our unique 'Plasma Switching Relay' module, allowing for various applications. High-temperature substrate heating stage (double jacket water-cooled) options: -1) Max 600℃ (lamp heating) -2) Max 1000℃ (C/C composite) -3) Max 1000℃ (SIC coating) Reverse sputtering stage inside the load lock: -1) 300W, or -2) Soft-Etching (<30W) System main control: 'IntelliDep' control system Windows PC (or TP HMI) interface All operations are centrally managed from a single HMI screen.

**Flexible System** The MiniLab thin film experimental device series allows for easy construction of a compact system without waste, even as a customized product, by incorporating suitable components (such as deposition sources and stages) and control modules according to the required deposition methods and materials from a wide range of options. By configuring the device with a modular control unit in a Plug&Play manner, the application range expands, enabling various thin film process experiments. The MiniLab series is a high-cost performance system that caters to a wide range of applications from research and development to small-scale production. **Small Footprint & Space-Saving** - Single Rack Type (MiniLab-026): 590(W) x 590(D)mm - Dual Rack Type (MiniLab-060): 1200(W) x 590(D)mm - Triple Rack Type (MiniLab-125): 1770(W) x 755(D)mm **Excellent Operability & Intuitive Operation Screen** Windows PC or 7” touch panel. Easy operation that does not require advanced skills, while ensuring maximum safety.

Compact/Space-saving, High-spec Thin Film Experiment Device Combination possible from the following deposition sources: - Resistance heating deposition source x up to 4 - Organic deposition source x up to 4 - Electron beam deposition - 2-inch sputtering cathode x 4 (or 3-inch x 3, 4-inch x 2) - Plasma etching: Can be installed in either the main chamber or the load lock chamber 【Small Footprint/Space-saving】 - Dual rack type (MiniLab-060): 1200(W) x 590(D)mm 【Excellent Operability/Intuitive Operation Screen】 Windows PC or 7” touch panel. Easy operation regardless of skill level, with maximum safety considerations.

The ML-080, with a volume of 80 liters and dimensions of 400(W)x400(D)x570(H)mm, is composed of a D-type box chamber. It has the same configuration as the 060 model but features a taller chamber, which extends the TS distance adjustment range and improves film uniformity during deposition on large-diameter substrates, making it an optimal model for vacuum deposition. It is a higher-end model than the ML-060, which can also accommodate a load lock mechanism. Like the 060, it is compact yet supports a wide range of applications including resistance heating deposition (for metals, insulators, and organic materials), EB deposition, RF/DC/PulseDC compatible magnetron sputtering, RIE plasma etching, CVD, and annealing. - Maximum substrate size: Φ10 inches - Resistance heating deposition sources x up to 4 sources - Organic deposition sources x up to 4 sources - Magnetron sputtering cathodes x 4 sources - Electron beam deposition - Substrate heating stage (standard 500°C, max 1000°C) - *Plasma etching / <30W soft etching - CVD (thermal CVD, PECVD) *Plasma etching can be installed in both the main chamber and the load lock chamber.

High-performance RF/DC magnetron sputtering system ● Achievable pressure: 5 x 10^-5 Pa (*1 x 10^-4 Pa in as fast as 30 minutes!) ● Sputter sources x 3: Continuous multilayer film control, simultaneous film deposition ● Film uniformity ±3% ● Various options: Up/down rotation, heater, cathode for magnetic materials, and more ◉ nanoPVD can be used for various purposes, including up to 3 sputter sources + 3 systems (MFC control), expansion of RF/DC PSU (up to 2 power supplies), continuous multilayer film, and simultaneous deposition from 2 sources (RF/DC or DC/DC only). - Insulating films - Conductive films - Compounds, and more 【Main Features】 ◉ Compatible substrates: 2" (1 to 3 sources) or 4" (1 source) ◉ 2" cathode x up to 3 sources ◉ 7" touch panel for easy operation with PLC automatic process control ◉ High-precision process control with MFC ◉ 1 Ar gas system (standard) + up to 3 additional systems for N2, O2 ◉ Connect to a Windows PC via USB port to create and save recipes for up to 1000 layers and 50 films. Data logging on PC. ◉ Other various options available.

MiniLab-080 glove box model with an 80ℓ large capacity chamber designed to be stored within a glove box bench. It features a slide-open and close chamber that maximizes the use of the workbench, and a rear-opening door designed with maintenance in mind. Samples processed can be consistently handled within a controlled environment inside the glove box without exposure to the atmosphere or moisture. For specifications of the GB gas purification unit, please refer to the GB model. ◉ Resistance heating evaporation source x up to 4 ◉ Organic evaporation source x up to 4 ◉ Magnetron sputtering cathode x 4 ◉ Electron beam evaporation ◉ Dry etching ◉ Annealing

**Flexible System** The MiniLab thin film experimental device series allows for easy construction of a compact system without waste, even as a customized product, by incorporating components (such as deposition sources and stages) and control modules tailored to the required deposition methods and materials from a wide range of options. By configuring the system with a modular control unit in a Plug&Play manner, the application range expands, enabling various thin film process experiments. The MiniLab series is a high cost-performance system that caters to a wide range of applications from research and development to small-scale production. **Small Footprint & Space-Saving** - Single Rack Type (MiniLab-026): 590(W) x 590(D)mm - Dual Rack Type (MiniLab-060): 1200(W) x 590(D)mm - Triple Rack Type (MiniLab-125): 1770(W) x 755(D)mm **Excellent Operability & Intuitive Operation Screen** Windows PC or 7” touch panel. Easy operation that does not require expertise, with maximum safety considerations.

High-performance organic source LTE (up to 4 sources) with excellent temperature responsiveness/stability for organic materials such as OLED, OPV, and OTFT, and a metal deposition source TE (up to 2 sources) that allows for easy exchange and maintenance. It can operate in manual mode, as well as in automatic modes for continuous multilayer film deposition and simultaneous film deposition. Despite its compact size, it achieves performance similar to that of standalone large machines without sacrificing basic performance, film quality, uniformity, or operability. Additionally, it features fully automated control via a simple touch panel with PLC. The user-friendly HMI allows anyone to operate it intuitively without requiring complicated operating procedures. It comes with remote software "IntelliLink," which connects to a Windows PC via USB cable, enabling monitoring of the device's operating status, log saving, online/offline recipe creation and saving, and fault analysis. This compact vacuum deposition system is designed to maximize the effective use of limited development and lab space while also excelling in maintenance.

This is a flexible thin film experimental device for R&D that achieves minimal waste, compact size, simple operation, and high cost performance by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug&Play feel. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 4, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and plasma etching. A glove box storage type is also available (*specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Maximum substrate size: Φ6inch ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 sources) ◉ Organic evaporation source: 1cc or 5cc ◉ Φ2inch magnetron cathode (up to 3 sources) ◉ Dry etching ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous deposition from 2 sources, HiPIMS, automatic thin film controller, custom substrate holders, substrate rotation/lifting, substrate heating, and more options available. *Please first contact us with your required specifications, and we will configure the system according to your needs.

This is a flexible thin film experimental device for R&D that achieves minimal waste, compact size, simple operation, and high cost performance by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug&Play feel. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 4, organic materials x4), and can be equipped with a substrate heating stage, allowing for the production of annealing devices and plasma etching. There is also a glove box storage type available (specifications to be discussed). A wide range of optional components that can be flexibly customized is available. ◉ Maximum substrate size: Φ6 inch ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 sources) ◉ Organic evaporation source: 1cc or 5cc ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Dry etching ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous deposition from 2 sources, HiPIMS, automatic thin film controller, custom substrate holders, substrate rotation/lifting, substrate heating, and many more options available. * Please first contact us with your required specifications, and we will configure the system according to your needs.

◉ Maximum operating temperature Max2000℃ ◉ Customizable heater structure: - Cylindrical heater: for sintering samples inside a crucible (for solid, powder, granule, and pellet-shaped samples) - Flat heater: for sintering Φ1" to Φ6" wafers and small chip samples ◉ PLC semi-auto control All operations except for temperature adjustment are performed on a touch panel screen. No need for cumbersome valve opening/closing or pump activation; the "vacuum/purge" cycle before sintering and "vent" after sintering are automatically sequenced with one button. ◉ Up to 3 MFCs for automatic flow control (or manual adjustment) ◉ APC automatic pressure control ◉ Ensuring safety during operation Monitoring for cooling water abnormalities, chamber temperature abnormalities, and overpressure abnormalities. Made of SUS, the robust water-cooled chamber can be safely used even during continuous operation at maximum temperature. ◉ Compact and space-saving Width 603 x Depth 603 x Height 1,160mm (*installed inside rotary pump housing) Various sample heating experiments, such as ultra-high temperature heating of small samples in laboratories and new material research and development, can be easily conducted. The main unit is compact yet suitable for research and development in a wide range of fields.

4 cathodes with Φ2 inch mounted Simultaneous film formation: 3-component simultaneous film formation (RF 500W or DC 850W) + HiPIMS (Pulse DC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed from the HMI screen using the plasma relay switch MFC x 3 systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coat) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Plasma etching can be installed in either the main chamber or the load lock chamber. ● Mixed specifications such as resistance heating deposition, organic material deposition, EB deposition, and PECVD can also be configured.

4 units of Φ2 inch cathodes installed Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen with the plasma relay switch 3 systems of MFC (Ar, O2, N2) for reactive sputtering Plasma etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coat) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● It is also possible to configure a mixed specification for resistance heating deposition, organic material deposition, EB deposition, etc.

Two thin film experimental devices are connected with a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected with the load lock. With Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible.

Two thin film experimental devices are connected with a load lock mechanism. Different film deposition devices (sputtering, evaporation, etc.) are seamlessly connected via the load lock. With Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible.