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analysis(tem) - List of Manufacturers, Suppliers, Companies and Products

Last Updated: Aggregation Period:Sep 03, 2025~Sep 30, 2025
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analysis Product List

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Technical Information Magazine 201905-01 Crystal Orientation Analysis with High Spatial Resolution

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** Using the TEM-based crystal orientation analysis system "ASTAR," it is possible to achieve higher spatial resolution than that of SEM-based EBSD (with spatial resolution of various EBSD methods being around tens of nanometers, while the ACOM-TEM method using ASTAR achieves 2 to 5 nm). Additionally, it is characterized by the ability to identify a greater variety of crystal structures. By obtaining crystal orientation maps, crystal phase maps, and grain size distributions that are difficult to acquire through conventional TEM analysis, quantitative interpretation becomes possible. Furthermore, since measurements can be taken in the same field of view as TEM observations, it allows for complex analyses combined with (S)TEM-EDX/EELS and the use of in-situ TEM. **Table of Contents** 1. Introduction 2. ACOM-TEM Method Using ASTAR 3. Examples of Analysis Using ASTAR 4. Conclusion

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Analysis of electronic components and materials using TEM.

TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.

TEM can perform not only high-magnification observation but also elemental analysis using EDS and EELS, as well as analysis of crystal structure, surface orientation, lattice constants, and more through electron diffraction.

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  • Other semiconductors
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Technical Information Magazine 201904-02 Cellulose Nanofiber Structural Analysis

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** In the research and development of CNF, the use of electron microscopy for observation has become a necessary evaluation across almost all material fields and research phases. Particularly for observing CNF dispersed in polymers using TEM, it is essential to employ the technique of "electron staining," which has been crucial for preparing TEM samples of polymer materials. In this presentation, we will introduce examples of morphological observations of composite materials using CNF, as well as observation cases of the CNF itself, structural analysis examples such as crystallinity measured by 13C solid-state NMR, and examples of compositional sugar analysis using acid hydrolysis HPLC-fluorescence detection. **Table of Contents** 1. Introduction 2. Overview of Morphological Observation 3. Observation Cases of CNF and CNF/Polymer 4. Evaluation of CNF Crystallinity 5. Compositional Sugar Analysis of CNF (HPLC-Fluorescence Detection) 6. Conclusion

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Structural analysis of nanomaterials

We offer contract services for structural analysis and morphological observation at the nanoscale.

We offer contract services for structural analysis and morphological observation of nanomaterials such as nanotubes using TEM, SEM, and EDS in the nanoscale region.

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Destructive analysis (material analysis, fracture surface analysis, FIB, TEM, etc.)

We will conduct failure analysis of electronic components and observe and analyze the failure locations through material analysis.

Experts in various components such as semiconductors, cables and connectors, printed circuit boards, display devices like LCDs, power units, batteries, AC adapters, and memory will conduct failure analysis. - Perform semiconductor package resin opening, and estimate causes through observations using optical microscopes, emission microscopes, and scanning electron microscopy (SEM) with mechanical polishing. - From the perspective of material analysis, estimate causes through processing and observation using focused ion beam processing observation equipment (FIB-SEM), and observation using transmission electron microscopy (TEM) for material condition, foreign matter identification, surface/break analysis, etc. *For more details, please refer to the PDF document or feel free to contact us.*

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Failure analysis of power devices

We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for analysis - Backside polishing - We accommodate various sample forms. Si chip size: 200um to 15mm square ■ Defective area identification - Backside IR-OBIRCH analysis and backside emission analysis - IR-OBIRCH analysis: Supports up to 100mA/10V and 100uA/25V Emission analysis: Supports up to 2kV * We address a wide range of defect characteristics such as low-resistance shorts, micro leaks, and high voltage breakdown failures. ■ Pinpoint cross-sectional observation of leak areas - SEM/TEM - We select SEM or TEM observation based on the predicted defects and can conduct physical observation and elemental analysis of leak defect areas with precision.

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  • Transistor
  • Analytical Equipment and Devices

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【Case Analysis】Corneal Epithelium (Cross-section)

Analyze at ×1,500! By observing at high magnification, you can also observe cell adhesion states and more!

We would like to introduce a case study of the analysis of "Corneal Epithelium (Cross-section)" conducted by our company. By observing cross-sections with TEM, it is possible to examine everything from corneal epithelial cells to the endothelium. High magnification observation allows for the examination of cell adhesion states and more. 【Analysis Overview】 ■ Analysis Target: Corneal Epithelium (Cross-section) ■ Cross-section observation using TEM ■ Capable of observing from corneal epithelial cells to the endothelium ■ High magnification observation allows for examination of cell adhesion states and more *For more details, please refer to the PDF document or feel free to contact us.

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Panasonic ReRAM 8-bit microcontroller structural analysis

Panasonic ReRAM-equipped MN101LR05D 8-bit microcontroller

The MN101LR05D is a low-power 8-bit single-chip microcontroller developed for portable healthcare, security devices, and sensor processing. The MN101LR05D features a CPU core with a 10MHz 8-bit AM13L, 64KB of ReRAM capacity, and 4KB of SRAM capacity. The MR101LR05D is the world's first mass-produced practical example of ReRAM (Resistive RAM), and it is expected to be widely utilized as a successor technology to existing non-volatile memory. The MN101LR05D is manufactured using a 180nm CMOS process with four layers of AI metallization. The ReRAM cell of this metal oxide is formed between stack W vias connecting metal 3 to metal 4. The results of the report are based on data from scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray analysis (TEM-EDS), electron energy loss spectroscopy (TEM-EEKS), and spreading resistance measurement (SRP).

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100V GaN transistor structure analysis, process analysis report

Structural and process analysis of GaN Systems' GaN power transistor "GS61008T-E01-MR"!

We provide the "Structural Analysis and Process Analysis Report for GaN Systems 100V GaN Transistor (GS61008T-E01-MR)." The structural analysis report clarifies the details of the GaN power transistor "GS61008T-E01-MR" from GaN Systems, while the process flow analysis report estimates the chip manufacturing process based on the results of the structural analysis. [Report Contents] ■ Structural Analysis Report - Package appearance, X-ray observation, chip plane analysis (wire connections, layout confirmation), chip cross-section analysis (GaN transistor, chip edge), GaN-Epi layer TEM-EDX analysis - Electrical characteristic measurements (Id-Vd, BVdss, capacitance characteristics) ■ Process Analysis Report - Extraction and estimation of manufacturing process flow, number of masks, process sequence cross-sectional diagram - Correlation analysis between electrical characteristics and device structure *For more details, please download the PDF or feel free to contact us.

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Technical Information Magazine 202001-02 Crystal Structure Analysis of Gallium Oxide

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** Gallium oxide (Ga2O3) is attracting attention as a next-generation power semiconductor material, and research has been actively conducted in recent years. Optimizing process technology is essential for improving the reliability and characteristics of semiconductor devices, making the evaluation methods crucial. This paper presents examples of crystal structure analysis necessary for assessing the quality of epitaxial films, as well as the analysis of impurities, defects, and carrier concentration in the ion implantation process, which significantly impacts device characteristics. **Table of Contents** 1. Introduction 2. Crystal structure analysis using cross-sectional TEM and planar STEM 3. Evaluation of the ion implantation process 4. Conclusion

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[Analysis Case] Local Crystal Structure Analysis of IGZO Film

Continuous evaluation of crystallinity and orientation using electron diffraction.

IGZO films are materials that are being researched and developed as TFT materials for displays. The presence or absence of crystalline structure in the thin film may affect the TFT characteristics and reliability, necessitating local crystalline evaluation within the device. We will introduce a case where the crystalline structure in IGZO films was continuously evaluated using electron diffraction measurements from TEM.

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[Case Analysis] Wide-field Observation of Renal Glomeruli

Analyzed with ×1,000 TEM! There is a spherical glomerulus in the center that filters urine from blood.

We would like to introduce a case study of the analysis of the "renal glomerulus" conducted by our company. The kidneys are organs that produce urine from blood. In the center of this diagram is a spherical glomerulus that filters urine from blood, and surrounding it are the renal tubules that reabsorb necessary components from the filtrate. [Analysis Overview] ■ Analysis Subject: Renal Glomerulus ■ The kidneys are organs that produce urine from blood ■ There is a spherical glomerulus in the center that filters urine from blood ■ There are renal tubules that reabsorb necessary components from the filtrate *For more details, please refer to the PDF document or feel free to contact us.

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[Case Study] Observation of Triadenovirus using Negative Staining Method

Analyzed with TEM at ×100,000! It is said to be a major pathogenic virus of the common cold, a spherical particle with a diameter of about 80 nm!

We would like to introduce a case study of the analysis of "triadenovirus" conducted by our company. Adenovirus is said to be a major pathogenic virus for colds and is a spherical particle with a diameter of approximately 80 nm. Using negative staining methods, the surface spikes can be observed. 【Analysis Overview】 ■ Analysis Subject: Triadenovirus ■ Adenovirus is a major pathogenic virus for colds ■ Spherical particle with a diameter of approximately 80 nm ■ Surface spikes can be observed using negative staining methods *For more details, please refer to the PDF document or feel free to contact us.

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Backside light emission analysis of SiC devices

Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device with less energy loss compared to conventional Si semiconductors and is attracting attention. However, due to its different physical properties from Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, destruction of the SiO2 film and damage to the SiC crystal were noted. *For more details, please refer to the PDF document or feel free to contact us.

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  • Analysis Services
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IC failure analysis

By combining various methods suitable for failure modes, we can consistently address everything from the identification of defective nodes to physical analysis.

We would like to introduce Aites Inc.'s "Defect Analysis of ICs." Our company provides a comprehensive approach to ICs by combining methods suitable for various defect modes, from identifying defective nodes to physical analysis. We offer various analysis techniques, including "Light Emission Analysis/OBIRCH Analysis," which allows layout verification using a Layout Viewer, as well as "Layer Delamination/Sample Processing," "PVC Analysis," "Diffusion Layer Etching," and "sMIM Analysis." 【Methods】 ■ Light Emission Analysis/OBIRCH Analysis ■ Layer Delamination/Sample Processing ■ Microprobe ■ PVC Analysis ■ EBAC Analysis ■ Physical Analysis (FIB-SEM, TEM) *For more details, please refer to the PDF document or feel free to contact us.

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  • Other analyses
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  • Analysis Services

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