ジャパンクリエイト List of Products and Services

The "RTA device" is a product that can handle processes from vacuum to pressurized processes (0.9 MPaG). It enables high-speed thermal oxidation, crystallization, and annealing treatment of the substrate surface. It achieves excellent substrate temperature distribution and gas flow methods. It can be used for semiconductors, as well as MEMS and electronic components. 【Features】 ■ Capable of handling processes from vacuum to pressurized processes (0.9 MPaG) ■ Enables high-speed thermal oxidation, crystallization, and annealing treatment of the substrate surface ■ Achieves excellent substrate temperature distribution and gas flow methods ■ Compatible with tray transport ■ Customizable for multi-chamber specifications and various made-to-order designs *For more details, please refer to the PDF document or feel free to contact us.

We would like to introduce the custom manufacturing achievements of Japan Create Co., Ltd. in "various vacuum devices." We have a track record that includes "annealing equipment for research and development," "batch-type plasma treatment equipment," "ultra-low temperature film deposition experimental equipment," and "exhaust gas switching equipment." We are conducting sample processing with demo units. Please feel free to contact us if you have any inquiries. 【Manufacturing Achievements (Excerpt)】 ■ Annealing equipment for research and development ■ Batch-type plasma treatment equipment ■ ZnS treatment equipment ■ Ultra-low temperature film deposition experimental equipment ■ Ultra-high vacuum chamber for analysis * For more details, please refer to the PDF materials or feel free to contact us.

The "Pressure RTA Device" is a product that can handle processes from vacuum to pressurization (0.9 MPaG). The heating source is a halogen lamp, and the heating rate can reach up to 150°C/sec, achieving excellent substrate temperature distribution and gas flow methods. This device can be used for applications such as semiconductors, MEMS, and electronic components, enabling high-speed thermal oxidation, crystallization, and annealing treatments on the substrate surface. 【Features】 ■ Reduces element loss specific to the heating process ■ Capable of handling processes from vacuum to pressurization (0.9 MPaG) ■ Enables high-speed thermal oxidation, crystallization, and annealing treatments on the substrate surface ■ Achieves excellent substrate temperature distribution and gas flow methods ■ Compatible with tray transport ■ Multi-chamber specifications can also be manufactured *For more details, please refer to the PDF document or feel free to contact us.