サムコ List of Products and Services

The "RIE-800iPC/RIE-400iPC" is an ICP etching device that boasts stability for continuous processing of 25 SiC trench-shaped wafers. It can efficiently and stably apply high RF power (over 2 kW), achieving good uniformity. Additionally, by adopting an exhaust system directly connected to the reaction chamber, it realizes a wide process window from low flow and low pressure to high flow and high pressure. 【Features】 <RIE-800iPC> ■ Supports maximum Φ8” wafers ■ Uses inductively coupled plasma for discharge ■ Equipped with a vacuum cassette chamber, excelling in process reproducibility and stability ■ Optimizes the distance between the wafer and plasma to ensure good in-plane uniformity ■ Integrates TMP (Turbo Molecular Pump) and high-frequency power supply for easy replacement *For more details, please refer to the PDF document or feel free to contact us.

• Etching Equipment

At Samco, Inc., we handle the plasma CVD equipment 'PD-270STLC/PD-2201LC'. The 'PD-270STLC' allows for excellent coverage during film formation at the top, middle, and bottom. Additionally, the 'PD-2201LC' can accommodate a wide range of customer requests, from simultaneous film formation of multiple small-diameter wafers using tray transport to highly uniform film formation through single wafer processing. 【Features】 <PD-270STLC> ■ SiN film formation using liquid precursor SN2 ■ Excellent coverage during film formation at the top, middle, and bottom *For more details, please refer to the PDF document or feel free to contact us.

• Other physicochemical equipment

The "AD-230LP" is an ALD device capable of atomic-level film thickness control. It supplies organic metal precursors and oxidizers alternately to the reaction chamber, forming a film solely through surface reactions. With a load-lock chamber, it does not expose the reaction chamber to the atmosphere, allowing for highly reproducible film formation. Additionally, by adopting a capacitively coupled plasma (CCP) method, it minimizes the volume of the reaction chamber, shortens gas purge times, and accelerates each cycle. 【Features】 - Conformal film formation at the top, middle, and bottom - Uniform layer control at the atomic monolayer level - Conformal film formation possible for high aspect ratio structures - Excellent in-plane uniformity and reproducibility, achieving a stable process - Unique reaction chamber structure suppresses particles *For more details, please refer to the PDF document or feel free to contact us.

• Other physicochemical equipment

The RIE-800BCT is a production silicon deep etching device that employs inductively coupled plasma in its discharge method. It enables high-aspect-ratio processing of over 50 and low scallop processing while maintaining a high etching rate and selectivity with resist. Additionally, by rapidly switching gases, it can reduce scallops while maintaining the etching rate. 【Features】 - Capable of deep silicon etching from nano to micro levels - Supports wafers up to 8 inches in diameter - High-aspect-ratio processing of over 50 - Low scallop processing - Extensive process library *For more details, please refer to the PDF document or feel free to contact us.

• Other processing machines

"Aqua Plasma" is a new treatment method that uses water vapor (H2O). It enables efficient and safe reduction of oxidized metals, resin bonding, hydrophilization, and decomposition of organic substances. We offer a lineup including the space-saving model "AQ-500," the large-area substrate compatible model "AQ-2000," and the magazine model "AQ-100M." 【Lineup】 ■ Space-saving model AQ-500 ■ Large-area substrate compatible model AQ-2000 ■ Φ8″ double cassette model AQ-200C ■ Magazine model AQ-100M *For more details, please refer to the PDF materials or feel free to contact us.

• Other physicochemical equipment

This document introduces examples of ICP etching for microLEDs. As part of the experiments and results, it includes the outcomes of GaN microLED mesa processing and the photoluminescence spectral data during the GaN microLED mesa processing. Please take a moment to read it. 【Contents】 ■ Experiments and Results ■ Results of GaN MicroLED Mesa Processing ■ Photoluminescence Spectral Data During GaN MicroLED Mesa Processing ■ Summary *For more details, please refer to the PDF document or feel free to contact us.

• CVD Equipment

This document introduces the groundbreaking surface treatment technology of silver and copper electrodes using Aqua Plasma. As an effect of Aqua Plasma, it includes results of compositional analysis of the oxidation depth on the surface of copper samples using ESCA with Ar beam etching. Please take a moment to read it. 【Contents】 ■ Introduction ■ Effects of Aqua Plasma ■ Surface-depth analysis results by ESCA ■ Photoresist removal rate ■ New products *For more details, please refer to the PDF document or feel free to contact us.

• CVD Equipment

This document introduces silicon processing data using the non-Bosch process. It includes results of silicon etching processed with the non-Bosch process using the RIE-800iP. Please take a moment to read it. 【Contents】 ■ Process ■ High aspect ratio Bosch process results ■ Sequential taper shape processing results ■ SEM results of silicon sidewall observation *For more details, please refer to the PDF document or feel free to contact us.

• CVD Equipment

Our company has a proven track record as a semiconductor manufacturing equipment manufacturer, providing ICP etching equipment, CVD equipment, and process technology for the production of GaN-based light-emitting devices. We also offer equipment capable of trench processing and mesa processing for 4H-SiC power devices. This document introduces the trench processing of GaN based on our past processing achievements. [Contents] ■ Introduction ■ Schematic diagram of trench MOSFET ■ Trench processing of GaN ■ Etching results ■ Conclusion *For more details, please refer to the PDF document or feel free to contact us.

• CVD Equipment

This document introduces plasma dicing of a wide variety of materials. It includes the advantages of plasma dicing and Samco's technology. Please take a moment to read it. 【Contents】 ■ Advantages of plasma dicing ■ Samco's technology ■ Processing of a wide variety of materials is possible ■ Conclusion *For more details, please refer to the PDF document or feel free to contact us.

• CVD Equipment

The "Aqua Plasma Cleaner" is a plasma treatment device that primarily uses water vapor. It can safely and efficiently perform surface treatments such as the reduction of metal oxide films, cleaning of organic contaminants, photoresist ashing, and hydrophilization. It can be applied to the reduction, modification, and cleaning of silver and copper electrodes, as well as the reduction of other metal oxides, surface modification of resins, hydrophilization, and ashing. 【Features】 ■ Achieves safe reduction and cleaning of metal oxide films ■ Addition of oxygen enables faster cleaning speeds ■ Built-in automatic control system for water vapor generation and supply ■ Dedicated design reduces installation area to 60% of conventional models ■ Supports multi-stage processing (up to 3 stages) *For more details, please refer to the PDF document or feel free to contact us.

• Other cleaning machines

The reaction chamber can be equipped with multiple tiers of electrode shelves, allowing for the processing of a large number of substrates in various shapes, from small components to square substrates for FPD. Additionally, it is a plasma cleaner that can select from three processing modes (RIE mode, plasma mode, downstream mode), enabling optimal processing according to the type of substrate.

• Other cleaning machines

This device allows you to select the processing mode from RIE mode and plasma mode, enabling optimal processing according to the type of substrate. Additionally, it is a very compact tabletop plasma cleaner designed to save space and can be used in various locations.

• Other cleaning machines

The UV-300H is a cleaning device developed to efficiently perform complete dry processing of various semiconductor processes such as photoresist ashing, silicon wafer cleaning, and chrome mask cleaning through the interaction of high-concentration ozone and ultraviolet irradiation. This device enables faster processing compared to conventional UV/O3 treatment.

• Other cleaning machines

The UV-300 is a cleaning device developed to efficiently perform complete dry processing of various semiconductor processes, such as photoresist ashing, silicon wafer cleaning, and chrome mask cleaning, through the interaction of high-concentration ozone and ultraviolet irradiation.

• Other cleaning machines

UV-1 is a research and development cleaning device designed to efficiently perform complete dry processing of various semiconductor processes, such as photoresist ashing, silicon wafer cleaning, and chrome mask cleaning, through the interaction of high-concentration ozone and ultraviolet irradiation.

• Other cleaning machines

● High selection ratio and high-precision etching are possible. ● Automatic operation and process parameter storage are possible with PLC control. ● Samples up to φ8 inches can be accommodated. ● High-speed exhaust etching is possible. ● Compact design.

• Etching Equipment

● No vacuum system is required due to atmospheric pressure operation ● Compact design ● Easy to operate and maintain ● Low cost

• Ozone Generator
• Ashing device
• Other semiconductor manufacturing equipment

● Only one-touch operation is required, with no special procedures needed. ● It has a small installation space and does not require a specific location. ● It can accommodate samples up to φ4 inches. ● Being a dedicated device, it is low-priced.

• Etching Equipment
• Ashing device
• Other semiconductor manufacturing equipment

● Despite its compact design, it can accommodate 5 pieces of 3-inch wafers, 3 pieces of 4-inch wafers, and 1 piece of 8-inch wafers. ● Up to 100-step processes are possible. ● Equipped with a load lock chamber, enabling stable processes. ● Features an interlock mechanism for various safety measures.

• CVD Equipment

● Adopts a tray cassette system. 1. Achieves high throughput by reducing transport time. 2. Supports wafers from φ2 inches to φ8 inches by changing trays. ● Adopts a vacuum cassette chamber. 1. Achieves high throughput with a single vacuum exhaust per cassette. 2. Avoids contamination effects and prevents oxidation of the wafer surface. ● Further improves the reliability of the PD-220L reaction chamber, which has a rich track record of deliveries.

• CVD Equipment

The RIE-330iPC is a multi-wafer processing etching device for compound semiconductor processes that employs an inductively coupled plasma (ICP) discharge method. 【Features】 ○ Compatible with large trays of Φ330mm Up to 27 pieces for Φ2-inch wafers, 17 pieces for Φ2.5-inch wafers, 12 pieces for Φ3-inch wafers, 7 pieces for Φ4-inch wafers, and 3 pieces for Φ6-inch wafers can be processed simultaneously. ○ By adopting the new SSTC (Symmetrical Shielded Tornado Coil) electrode as the ICP source, it enables high selectivity and excellent uniformity in etching over large areas. ○ Allows for low-damage processes at low bias (below -100V). ○ Stable etching conditions can be achieved through temperature control of the substrate stage and the inner walls of the reaction chamber. ○ A turbo molecular pump is also used in the load lock chamber, providing a more stable process.

• Etching Equipment
• Wafer processing/polishing equipment

● The adoption of a unique self-bias method enables high-speed (3000-5000 Å/min) and low-stress film deposition. (Patent pending) ● Low-temperature film deposition is possible at room temperature to about 350°C. Additionally, film deposition on plastics is feasible. ● Unique modifications in the reaction chamber help suppress particle generation. ● The LS-CVD method using liquid source TEOS allows for excellent step coverage and filling effects in film deposition. ● Arbitrary control of the refractive index is possible using liquid sources of Ge, P, and B. In addition to the standard one series, it is possible to add two more series of dopant introduction systems as options.

• CVD Equipment

● Since it is a completely dry process, it is possible to suppress the destruction of self-supporting devices due to stiction. ● No pre-treatment or post-treatment is required in the wet process. ● By intermittently flowing gas and etching, it is easy to control the etching speed and gas usage. ● Since it does not use plasma, there is no damage to the device from electric fields (electron or ion impact). ● Designed for research and development purposes, it is very compact and tabletop in design. ● As it is a dedicated machine, it is low-cost.

• Etching Equipment