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Analysis Product List

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Technical Information Magazine 201905-01 Crystal Orientation Analysis with High Spatial Resolution

Technical Information Magazine 201905-01 Crystal Orientation Analysis with High Spatial Resolution

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** Using the TEM-based crystal orientation analysis system "ASTAR," it is possible to achieve higher spatial resolution than that of SEM-based EBSD (with spatial resolution of various EBSD methods being around tens of nanometers, while the ACOM-TEM method using ASTAR achieves 2 to 5 nm). Additionally, it is characterized by the ability to identify a greater variety of crystal structures. By obtaining crystal orientation maps, crystal phase maps, and grain size distributions that are difficult to acquire through conventional TEM analysis, quantitative interpretation becomes possible. Furthermore, since measurements can be taken in the same field of view as TEM observations, it allows for complex analyses combined with (S)TEM-EDX/EELS and the use of in-situ TEM. **Table of Contents** 1. Introduction 2. ACOM-TEM Method Using ASTAR 3. Examples of Analysis Using ASTAR 4. Conclusion

  • Contract Analysis
  • Contract measurement
  • Technical and Reference Books
  • Analysis

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Analysis of electronic components and materials using TEM.

Analysis of electronic components and materials using TEM.

TEM (Transmission Electron Microscope) meets a wide range of requirements for observing failure sites of electronic components, length measurements, elemental analysis, crystal structure analysis, and material evaluation.

TEM can perform not only high-magnification observation but also elemental analysis using EDS and EELS, as well as analysis of crystal structure, surface orientation, lattice constants, and more through electron diffraction.

  • Contract Analysis
  • Other semiconductors
  • Other contract services
  • Analysis

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Technical Information Magazine 201904-02 Cellulose Nanofiber Structural Analysis

Technical Information Magazine 201904-02 Cellulose Nanofiber Structural Analysis

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** In the research and development of CNF, the use of electron microscopy for observation has become a necessary evaluation across almost all material fields and research phases. Particularly for observing CNF dispersed in polymers using TEM, it is essential to employ the technique of "electron staining," which has been crucial for preparing TEM samples of polymer materials. In this presentation, we will introduce examples of morphological observations of composite materials using CNF, as well as observation cases of the CNF itself, structural analysis examples such as crystallinity measured by 13C solid-state NMR, and examples of compositional sugar analysis using acid hydrolysis HPLC-fluorescence detection. **Table of Contents** 1. Introduction 2. Overview of Morphological Observation 3. Observation Cases of CNF and CNF/Polymer 4. Evaluation of CNF Crystallinity 5. Compositional Sugar Analysis of CNF (HPLC-Fluorescence Detection) 6. Conclusion

  • Contract Analysis
  • Contract measurement
  • Technical and Reference Books
  • Analysis

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Structural analysis of nanomaterials

Structural analysis of nanomaterials

We offer contract services for structural analysis and morphological observation at the nanoscale.

We offer contract services for structural analysis and morphological observation of nanomaterials such as nanotubes using TEM, SEM, and EDS in the nanoscale region.

  • Contract measurement
  • Analysis

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Destructive analysis (material analysis, fracture surface analysis, FIB, TEM, etc.)

Destructive analysis (material analysis, fracture surface analysis, FIB, TEM, etc.)

We will conduct failure analysis of electronic components and observe and analyze the failure locations through material analysis.

Experts in various components such as semiconductors, cables and connectors, printed circuit boards, display devices like LCDs, power units, batteries, AC adapters, and memory will conduct failure analysis. - Perform semiconductor package resin opening, and estimate causes through observations using optical microscopes, emission microscopes, and scanning electron microscopy (SEM) with mechanical polishing. - From the perspective of material analysis, estimate causes through processing and observation using focused ion beam processing observation equipment (FIB-SEM), and observation using transmission electron microscopy (TEM) for material condition, foreign matter identification, surface/break analysis, etc. *For more details, please refer to the PDF document or feel free to contact us.*

  • Other contract services
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  • Analysis

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Surface and thin film analysis of semiconductors

Surface and thin film analysis of semiconductors

Detailed investigation of surface chemical composition, bonding states, and impurity distribution!

We would like to introduce our "Surface and Thin Film Analysis of Semiconductors." We propose effective analyses for material evaluation and failure mode identification in the process development, process management, and failure analysis of semiconductor devices. We provide detailed information that is useful for research and development, manufacturing processes, and failure analysis by examining the chemical composition, bonding states, and impurity distribution of surfaces. Please feel free to contact us when you need our services. 【Top Surface】 ■Composition: XPS ■Bonding State: XPS ■Contamination: TOF-SIMS, ICP-MS ■Roughness: AFM, SEM *For more details, please download the PDF or feel free to contact us.

  • Contract Analysis
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Failure analysis of power devices

Failure analysis of power devices

We will identify and observe the defective areas of power devices such as diodes, MOS-FETs, and IGBTs.

We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for analysis - Backside polishing - We accommodate various sample forms. Si chip size: 200um to 15mm square ■ Defective area identification - Backside IR-OBIRCH analysis and backside emission analysis - IR-OBIRCH analysis: Supports up to 100mA/10V and 100uA/25V Emission analysis: Supports up to 2kV * We address a wide range of defect characteristics such as low-resistance shorts, micro leaks, and high voltage breakdown failures. ■ Pinpoint cross-sectional observation of leak areas - SEM/TEM - We select SEM or TEM observation based on the predicted defects and can conduct physical observation and elemental analysis of leak defect areas with precision.

  • Contract Analysis
  • Transistor
  • Analytical Equipment and Devices
  • Analysis

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【Case Analysis】Corneal Epithelium (Cross-section)

【Case Analysis】Corneal Epithelium (Cross-section)

Analyze at ×1,500! By observing at high magnification, you can also observe cell adhesion states and more!

We would like to introduce a case study of the analysis of "Corneal Epithelium (Cross-section)" conducted by our company. By observing cross-sections with TEM, it is possible to examine everything from corneal epithelial cells to the endothelium. High magnification observation allows for the examination of cell adhesion states and more. 【Analysis Overview】 ■ Analysis Target: Corneal Epithelium (Cross-section) ■ Cross-section observation using TEM ■ Capable of observing from corneal epithelial cells to the endothelium ■ High magnification observation allows for examination of cell adhesion states and more *For more details, please refer to the PDF document or feel free to contact us.

  • Contract Analysis
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100V GaN transistor structure analysis, process analysis report

100V GaN transistor structure analysis, process analysis report

Structural and process analysis of GaN Systems' GaN power transistor "GS61008T-E01-MR"!

We provide the "Structural Analysis and Process Analysis Report for GaN Systems 100V GaN Transistor (GS61008T-E01-MR)." The structural analysis report clarifies the details of the GaN power transistor "GS61008T-E01-MR" from GaN Systems, while the process flow analysis report estimates the chip manufacturing process based on the results of the structural analysis. [Report Contents] ■ Structural Analysis Report - Package appearance, X-ray observation, chip plane analysis (wire connections, layout confirmation), chip cross-section analysis (GaN transistor, chip edge), GaN-Epi layer TEM-EDX analysis - Electrical characteristic measurements (Id-Vd, BVdss, capacitance characteristics) ■ Process Analysis Report - Extraction and estimation of manufacturing process flow, number of masks, process sequence cross-sectional diagram - Correlation analysis between electrical characteristics and device structure *For more details, please download the PDF or feel free to contact us.

  • Other services
  • Analysis

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Specification verification and failure analysis through reliability testing.

Specification verification and failure analysis through reliability testing.

Analysis can be performed on samples in various conditions thanks to our unique preprocessing technology!

Our company conducts consistent analysis from reliability testing to failure analysis. This allows us to confirm whether the samples meet the specifications, as well as to identify and observe the defective areas of failed samples. We propose and implement tests and analyses tailored to our customers' requests and objectives, assisting from cause investigation to problem resolution. Please feel free to contact us when you need our services. 【Analysis Flow】 ■ Specification confirmation of semiconductor devices through reliability testing ■ Identification of defective areas and observation of failure points using TEM ・ Identification of defective areas through EMS/OBIRCH analysis ・ Observation of failure points using TEM *For more details, please download the PDF or feel free to contact us.

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  • Other Testing Contract
  • Contract Analysis
  • Analysis

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Technical Information Magazine 202001-02 Crystal Structure Analysis of Gallium Oxide

Technical Information Magazine 202001-02 Crystal Structure Analysis of Gallium Oxide

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** Gallium oxide (Ga2O3) is attracting attention as a next-generation power semiconductor material, and research has been actively conducted in recent years. Optimizing process technology is essential for improving the reliability and characteristics of semiconductor devices, making the evaluation methods crucial. This paper presents examples of crystal structure analysis necessary for assessing the quality of epitaxial films, as well as the analysis of impurities, defects, and carrier concentration in the ion implantation process, which significantly impacts device characteristics. **Table of Contents** 1. Introduction 2. Crystal structure analysis using cross-sectional TEM and planar STEM 3. Evaluation of the ion implantation process 4. Conclusion

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[Case Study] Observation of Triadenovirus using Negative Staining Method

[Case Study] Observation of Triadenovirus using Negative Staining Method

Analyzed with TEM at ×100,000! It is said to be a major pathogenic virus of the common cold, a spherical particle with a diameter of about 80 nm!

We would like to introduce a case study of the analysis of "triadenovirus" conducted by our company. Adenovirus is said to be a major pathogenic virus for colds and is a spherical particle with a diameter of approximately 80 nm. Using negative staining methods, the surface spikes can be observed. 【Analysis Overview】 ■ Analysis Subject: Triadenovirus ■ Adenovirus is a major pathogenic virus for colds ■ Spherical particle with a diameter of approximately 80 nm ■ Surface spikes can be observed using negative staining methods *For more details, please refer to the PDF document or feel free to contact us.

  • Contract Analysis
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Backside light emission analysis of SiC devices

Backside light emission analysis of SiC devices

Pre-processing of SiC devices → Identification of leakage points → Physical analysis/component analysis handled seamlessly!

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device with less energy loss compared to conventional Si semiconductors and is attracting attention. However, due to its different physical properties from Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, destruction of the SiO2 film and damage to the SiC crystal were noted. *For more details, please refer to the PDF document or feel free to contact us.

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  • Analysis Services
  • Contract Analysis
  • Analysis

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[Case Analysis] Wide-field Observation of Renal Glomeruli

[Case Analysis] Wide-field Observation of Renal Glomeruli

Analyzed with ×1,000 TEM! There is a spherical glomerulus in the center that filters urine from blood.

We would like to introduce a case study of the analysis of the "renal glomerulus" conducted by our company. The kidneys are organs that produce urine from blood. In the center of this diagram is a spherical glomerulus that filters urine from blood, and surrounding it are the renal tubules that reabsorb necessary components from the filtrate. [Analysis Overview] ■ Analysis Subject: Renal Glomerulus ■ The kidneys are organs that produce urine from blood ■ There is a spherical glomerulus in the center that filters urine from blood ■ There are renal tubules that reabsorb necessary components from the filtrate *For more details, please refer to the PDF document or feel free to contact us.

  • Contract Analysis
  • Analysis

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IC failure analysis

IC failure analysis

By combining various methods suitable for failure modes, we can consistently address everything from the identification of defective nodes to physical analysis.

We would like to introduce Aites Inc.'s "Defect Analysis of ICs." Our company provides a comprehensive approach to ICs by combining methods suitable for various defect modes, from identifying defective nodes to physical analysis. We offer various analysis techniques, including "Light Emission Analysis/OBIRCH Analysis," which allows layout verification using a Layout Viewer, as well as "Layer Delamination/Sample Processing," "PVC Analysis," "Diffusion Layer Etching," and "sMIM Analysis." 【Methods】 ■ Light Emission Analysis/OBIRCH Analysis ■ Layer Delamination/Sample Processing ■ Microprobe ■ PVC Analysis ■ EBAC Analysis ■ Physical Analysis (FIB-SEM, TEM) *For more details, please refer to the PDF document or feel free to contact us.

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  • Other analyses
  • Contract Analysis
  • Analysis Services
  • Analysis

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[Analysis Case] Analysis of Organic EL (OLED) Emission Layer

[Analysis Case] Analysis of Organic EL (OLED) Emission Layer

Quantitative evaluation of the guest in the light-emitting layer and film thickness is possible.

Organic EL displays are advancing towards practical use by leveraging advantages such as high brightness, high-resolution color, and thinness due to their self-emission principle. In the emission layer, guest molecules are doped into host molecules to enhance the emission efficiency. In this study, we identified the emission layer materials for red pixels in organic EL display elements. Additionally, we conducted thickness evaluation of the emission layer using a newly developed step gauge and quantified the guest materials within the emission layer. This allows for qualitative and quantitative analysis of guest molecules in the emission layer, as well as evaluation of the thickness of the emission layer. Measurement methods: TOF-SIMS, TEM, XPS Product field: Displays Analysis purpose: Composition evaluation, identification, thickness evaluation For more details, please download the materials or contact us.

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  • LCD display
  • Analysis

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Power semiconductor analysis service

Power semiconductor analysis service

We will handle everything from the evaluation of the diffusion layer to physical analysis/chemical analysis regarding the malfunctioning part!

At Aites Co., Ltd., we offer analysis services for power semiconductors. Since our separation and independence from the Quality Assurance Department of IBM Japan's Yasu office in 1993, we have cultivated our own unique analysis and evaluation techniques. We can handle not only Si semiconductors but also the trending wide bandgap semiconductors. 【Features】 ■ OBIRCH analysis supports not only Si but also SiC and GaN devices ■ FIB processing is possible from either side ■ Visualization of the depletion layer formed at the PN junction ■ Elemental analysis such as EDS and EELS is also supported *For more details, please refer to the PDF document or feel free to contact us.

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  • Analysis Services
  • Contract Analysis
  • Semiconductor inspection/test equipment
  • Analysis

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Analysis of defective connector terminal contacts with Au plating【STEM/EDS】

Analysis of defective connector terminal contacts with Au plating【STEM/EDS】

It can be confirmed without loss by the "sampling method that protects the surface" of the adhered layer (approximately 20nm) on the surface of the connector terminal plated with STEM.

In STEM (Scanning Transmission Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy), information about the composition of the sample (contrast images reflecting atomic numbers) can be obtained by scanning a finely focused electron beam over the sample. The following features are also available: - Observation of changes in diffraction contrast by varying the angle of incidence of the electron beam - Determination of whether the observation target is crystalline - Acquisition of information about crystal defects (dislocations, twins, etc.) within the crystal In this case, we will introduce "Failure Analysis of Au-Plated Connector Terminal Contacts Using STEM." Please take a moment to read the PDF materials. Additionally, our company conducts various cross-sectional analyses using not only STEM but also TEM and SEM. We would be happy to assist you, so please feel free to reach out. Seiko Future Creation Official Website https://www.seiko-sfc.co.jp/ *Other materials are also available. If you request them through the inquiry button, we will send them to you.

  • Plating Equipment
  • Contract Analysis
  • Other metal materials
  • Analysis

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Phase analysis of duplex stainless steel using EBSD.

Phase analysis of duplex stainless steel using EBSD.

You can understand the performance comparison of metals and metal compounds in terms of hardness and brittleness, as well as why discoloration issues occur.

Electron Backscatter Diffraction Pattern (EBSD) allows for the following when combined with a Scanning Electron Microscope (SEM): - Separation of phases with different crystal systems - Distribution ratio and crystal orientation analysis for each separated phase In this case, we introduce phase analysis of a two-phase stainless steel using EBSD. With EBSD, the distribution ratio and crystal orientation of the α phase and γ phase in the two-phase stainless steel were confirmed. This measurement technique can be utilized to compare properties such as hardness and brittleness in the distribution of materials in metals and metal compounds, as well as to detect the degree of precipitation and understand its impact on color. We encourage you to give it a try. Additionally, our company conducts various cross-sectional analyses using TEM and surface analysis using XPS, allowing for multifaceted analytical assessments. Our engineers are available to assist directly, so please feel free to consult with us. Seiko Future Creation Official Website https://www.seiko-sfc.co.jp/

  • Contract Analysis
  • Other metal materials
  • stainless
  • Analysis

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Evaluation of semiconductor insulating films using STEM/EDS.

Evaluation of semiconductor insulating films using STEM/EDS.

STEM-EDS observation can confirm the shape and layer structure of the insulating film between semiconductor Poly-Si (polysilicon) and can be applied to investigate the causes of semiconductor defects.

In STEM (Scanning Transmission Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy), information regarding the composition of the sample (contrast images reflecting atomic numbers) can be obtained by scanning a finely focused electron beam over the sample. Additionally, the following features are available: - Observation of changes in diffraction contrast by varying the angle of incidence of the electron beam - Determination of whether the observation target is crystalline - Acquisition of information on crystal defects (dislocations, twins, etc.) within the crystal In this case, we introduce "Evaluation of Semiconductor Insulating Films using STEM-EDS." This case yielded no issues, but abnormal detection is also possible. Please take a moment to read the PDF materials. Furthermore, in addition to this STEM, our company excels in identifying defective areas by performing 3D reconstruction on specific regions of the sample in combination with FIB. We would be happy to provide a demonstration, so please feel free to reach out to us. Seiko Future Creation Official Website https://www.seiko-sfc.co.jp/ *Other materials are also available. If you request them through the inquiry button, we will send them to you.

  • Semiconductor inspection/test equipment
  • Contract Analysis
  • Other semiconductors
  • Analysis

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Panasonic ReRAM 8-bit microcontroller structural analysis

Panasonic ReRAM 8-bit microcontroller structural analysis

Panasonic ReRAM-equipped MN101LR05D 8-bit microcontroller

The MN101LR05D is a low-power 8-bit single-chip microcontroller developed for portable healthcare, security devices, and sensor processing. The MN101LR05D features a CPU core with a 10MHz 8-bit AM13L, 64KB of ReRAM capacity, and 4KB of SRAM capacity. The MR101LR05D is the world's first mass-produced practical example of ReRAM (Resistive RAM), and it is expected to be widely utilized as a successor technology to existing non-volatile memory. The MN101LR05D is manufactured using a 180nm CMOS process with four layers of AI metallization. The ReRAM cell of this metal oxide is formed between stack W vias connecting metal 3 to metal 4. The results of the report are based on data from scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray analysis (TEM-EDS), electron energy loss spectroscopy (TEM-EEKS), and spreading resistance measurement (SRP).

  • Other electronic parts
  • Analysis

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Genetic Analysis: Cell Line Authentication (STR Analysis) Contract Analysis Service

Genetic Analysis: Cell Line Authentication (STR Analysis) Contract Analysis Service

For the identification and authentication of human cell lines and the detection of cross-contamination within the same cell line!

Our company offers a cell line authentication (STR analysis) contract analysis service. We determine the STR (short tandem repeat) genotype from samples derived from human cultured cells. We use the GenePrint® System (10 loci) or the PowerPlex® 16 System (16 loci). Please use this service for the identification and authentication of human cell lines, as well as for detecting cross-contamination within the same type of cell lines. 【Features】 - Determine STR genotype from samples derived from human cultured cells. - Use the GenePrint® System, which is suitable for the identification and authentication of human cell lines and for detecting cross-contamination within the same type of cell lines. - Use the PowerPlex® 16 System, which is suitable for confirming the genotype of iPS/ES cells. - We can provide a free English report for customers who wish to submit it for publication. *For more details, please refer to the PDF materials or feel free to contact us.

  • Contract Analysis
  • Analysis

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EMI analysis using R&S RTO/RTE

EMI analysis using R&S RTO/RTE

Implemented important functions to capture and analyze unnecessary radiation.

The R&S RTO/RTE digital oscilloscope is a valuable tool for analyzing EMI issues in electronic design. High input sensitivity, high dynamic range, and powerful FFT implementation are essential features for capturing and analyzing unwanted emissions. 【Applications】 ■ Easy setup ■ Clear navigation across a wide capture bandwidth and frequency domain ■ Implementation of overlapping FFT with color-coded display of spectral components ■ Gate FFT for correlation time-frequency analysis ■ Capture of sporadic events using frequency masks *For more details, please refer to the PDF document or feel free to contact us.

  • Other measurement, recording and measuring instruments
  • oscilloscope
  • Analysis

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FEMFAT laminate: Fatigue strength analysis of continuous fiber reinforced resin

FEMFAT laminate: Fatigue strength analysis of continuous fiber reinforced resin

It is possible to analyze the fatigue strength of each layer of continuous fiber reinforced resin under multi-axial loading.

FEMFAT laminate is a module for fatigue analysis of continuous fiber reinforced resins (available in ChannelMAX). Within the MAX module, fatigue strength evaluation can be conducted individually for each laminate. The front and back sides of each laminate in the composite material are subject to damage calculation. The analysis method is adapted to the laminate material using the stress types of "Critical Component in Critical Plane," evaluating fiber breakage and interlayer breakage within the fibers. Furthermore, when using a solid element model (typically 8-node hexahedral elements), delamination can also be assessed. For damage calculation, static strength characteristics (tensile strength and compressive strength) and fatigue strength characteristics (S-N curves) are required for loads in the parallel and perpendicular directions to the fibers, as well as for shear loads in the laminate plane. It supports shell and solid elements defined with COMPOSITE properties using Abaqus inp files and odb files. *For more details, please download the PDF or contact us.*

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  • Structural Analysis
  • Analysis

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Modal analysis and static analysis of turbine rotors【AIFEM】

Modal analysis and static analysis of turbine rotors【AIFEM】

Created a mesh model using the mesh creation tool within AIFEM! Results demonstrating the effectiveness of the software.

In this case, we will introduce the modal analysis and static analysis of the turbine rotor using the structural analysis software AIFEM. The analysis results obtained with AIFEM demonstrated the effectiveness of the software through comparison with reference data (a certain commercial software). The model subject to analysis consists of a hub, shroud, and seven blades, forming the turbine rotor. The shape data used is in .stp format, and a mesh model was created using the mesh creation tool within AIFEM. *For detailed content of the article, you can view it through the related links. For more information, please download the PDF or feel free to contact us.*

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  • Turbine
  • Structural Analysis
  • Analysis

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FEM (Finite Element Method) Contract Analysis Service

FEM (Finite Element Method) Contract Analysis Service

At Benkan Kiko, we offer services such as strength analysis using FEM (Finite Element Method).

The various special fittings for processes handled by Benkan Kiko require more diverse specifications than commonly used and sold pipe fittings. In particular, pressure resistance performance is a crucial characteristic for ensuring the behavior and safety of pipe fittings under high pressure. Pressure resistance is secured by optimizing the shape and dimensions of the pipe fittings, and one of the design methods used is FEM analysis. This service includes the following main contents: - Design support for piping materials such as pipe fittings using FEM analysis ▻ Design of special-shaped pipe fittings (replacement from cast piping materials in high-pressure environments, etc.) ▻ Evaluation of pressure resistance performance of existing pipe fittings ▻ Manufacturing of special fittings (support from material procurement to manufacturing, testing, inspection, and shipping) - Various responses are possible by combining with our proprietary technology. For inquiries, please first contact our sales representative or use the web inquiry form on our website. From the initial meeting, a dedicated representative from our technical headquarters will respond, allowing you to directly reflect your requests in the analysis results. We can accommodate various meeting formats, including on-site visits, visits to our company, and web conferences (Zoom, MS Teams, etc.). Please feel free to consult with us.

  • Pipe Fittings
  • Beverage Production Equipment
  • Wastewater/wastewater treatment equipment
  • Analysis

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[Case Study] Dental Instruments - Vibration Characteristics Simulation of Ultrasonic Scalers

[Case Study] Dental Instruments - Vibration Characteristics Simulation of Ultrasonic Scalers

I investigated the vibration characteristics of ultrasonic scalers based on various chip shapes.

We will introduce a case study of analysis using Simcenter Femap with Nastran, focusing on the vibration characteristics simulation of dental instruments - ultrasonic scalers.

  • Other analyses
  • Analysis

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[AIFEM] Strength Analysis of Automotive Floor

[AIFEM] Strength Analysis of Automotive Floor

By comparing the results of strength analysis and eigenvalue analysis with reference results, the verification of AIFEM's analysis accuracy is also conducted simultaneously!

The rear floor of the vehicle is influenced by both the static load of the tires and the dynamic load from the road surface. Verifying the deformation and stress distribution of the floor plays an important role not only in improving the safety performance of the vehicle but also in leading to proposals for new structural designs. In this analysis, we will conduct structural strength and eigenvalue analysis of the vehicle floor to investigate its structural performance. *For more detailed information, please refer to the related links. For further details, you can download the PDF or feel free to contact us.*

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  • Other analysis software
  • Analysis

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Strength analysis of the steel structure of the transfer device.

Strength analysis of the steel structure of the transfer device.

Conducted strength analysis using AIFEM! High strength performance is required for structures.

This article introduces the strength analysis of the steel structure of a transfer device used offshore, conducted using the general-purpose finite element analysis software AIFEM. The transfer device is used for transporting and moving large marine equipment, thus requiring high strength performance in its structure. Strength analysis was performed using AIFEM to identify the weak points of the structure under different working conditions. *For more detailed information, please refer to the related links. You can download the PDF for more details or feel free to contact us.*

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  • Structural Analysis
  • Analysis

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