アイテス Product Lineup

● Comprehensive technical services covering the entire product life cycle We provide support throughout the entire product life cycle, including raw material evaluation during development necessary for improving the quality of electronic components, reliability testing and result analysis, timely feedback of failure analysis and results to the development and manufacturing sites after shipment, and consulting for quality problem resolution. ● Prompt analysis and reporting of reliability test results For defects identified in reliability testing, we assist in accurate and timely cause identification and analysis through a rich and efficient analysis menu. ● Use only the services you need, as much as you need You can freely choose from a range of services, including conducting tests and inspections based on a predetermined evaluation plan, developing evaluation and analysis plans for problem resolution, result analysis, cause investigation, and consultation, according to your needs.

We would like to introduce Aites Inc.'s "Defect Analysis of ICs." Our company provides a comprehensive approach to ICs by combining methods suitable for various defect modes, from identifying defective nodes to physical analysis. We offer various analysis techniques, including "Light Emission Analysis/OBIRCH Analysis," which allows layout verification using a Layout Viewer, as well as "Layer Delamination/Sample Processing," "PVC Analysis," "Diffusion Layer Etching," and "sMIM Analysis." 【Methods】 ■ Light Emission Analysis/OBIRCH Analysis ■ Layer Delamination/Sample Processing ■ Microprobe ■ PVC Analysis ■ EBAC Analysis ■ Physical Analysis (FIB-SEM, TEM) *For more details, please refer to the PDF document or feel free to contact us.

At Aites Co., Ltd., we conduct analysis of semiconductor diffusion layers using sMIM. The Scanning Microwave Impedance Microscopy (sMIM) features a signal that has a linear correlation with dopant concentration. sMIM scans the sample by irradiating microwaves from the tip of a metal probe attached to an SPM and measures the reflected waves to obtain sMIM-C images that have a linear correlation with the concentration of the diffusion layer. The C component of Zs obtained from reflectivity consists of oxide film capacitance and depletion layer capacitance, and by utilizing the fact that the depletion layer width changes depending on impurity concentration, we detect changes in concentration as changes in C. [Application Examples] ■ sMIM-C: Visualization of diffusion layers and semi-quantitative evaluation of dopant concentration for various semiconductor devices such as Si, SiC, GaN, InP, GaAs, etc. ■ dC/dV: Evaluation of diffusion layer shape, determination of p/n polarity, visualization of depletion layers. *For more details, please refer to the PDF materials or feel free to contact us.

We perform optimal preprocessing for power devices such as diodes, MOS FETs, and IGBTs of all sizes and shapes, and identify and observe defective areas through backside IR-OBIRCH analysis and backside emission analysis. ■ Preprocessing for analysis - Backside polishing - We accommodate various sample forms. Si chip size: 200um to 15mm square ■ Defective area identification - Backside IR-OBIRCH analysis and backside emission analysis - IR-OBIRCH analysis: Supports up to 100mA/10V and 100uA/25V Emission analysis: Supports up to 2kV * We address a wide range of defect characteristics such as low-resistance shorts, micro leaks, and high voltage breakdown failures. ■ Pinpoint cross-sectional observation of leak areas - SEM/TEM - We select SEM or TEM observation based on the predicted defects and can conduct physical observation and elemental analysis of leak defect areas with precision.

TEM can perform not only high-magnification observation but also elemental analysis using EDS and EELS, as well as analysis of crystal structure, surface orientation, lattice constants, and more through electron diffraction.

A new method for structural analysis of electronics products manufactured with nanoscale precision, such as semiconductor devices, MEMS, and TFTs: We propose cross-beam FIB for cross-sectional observation.

■Problem-Solving Ability Consulting that leads to solutions with knowledge and technology Supporting customer schedules with quick responses ■Investigative Ability Skills to pinpoint and visualize malfunctioning areas Deep insight and advanced, delicate sample processing techniques ■Specialized Equipment Liquid tank thermal shock testing at up to 180°C Power cycle testing essential for power semiconductors

■Comprehensive Capability Consistent evaluation resistance from reliability testing to electrical characteristic measurement, optical characteristic measurement, and further analysis. ■Rich Analytical Methods - Forward bias analysis / Reverse bias analysis - Detection from visible to infrared - Emission analysis / OBIRCH analysis ■Special Technology By filtering the visible light range, we can detect weak emissions from abnormal areas without missing them.

This document introduces the defects of solar cell modules and presents case studies where various cross-sectional processing was conducted for observation and analysis, along with the factors contributing to degradation. It includes an introduction to "the basic structure of solar cells" and discusses "non-destructive analysis and destructive analysis" using diagrams and photographs. We encourage you to read it. 【Contents】 ■ Introduction ■ Basic structure of solar cells ■ Non-destructive analysis and destructive analysis ■ Various defect modes ■ Conclusion *For more details, please refer to the PDF document or feel free to contact us.

At AITES, we provide total solution services for power devices, including reliability testing, analysis, and evaluation. This includes the "Power Cycle Testing Machine," which can simultaneously conduct transient thermal measurements, as well as "failure analysis of compound semiconductors," "concentration analysis of diffusion layers," and "cross-sectional analysis of modules." We will make proposals based on specific achievements. Keywords: ■General power semiconductors (chips, module TIM materials, etc.) ■Reliability testing/evaluation ■Structural analysis (quality, competitor product RE) ■Failure analysis (identification of failure points, cause investigation, improvement proposals) 【List of Tests】 ■Power Cycle Testing ■Liquid Tank Thermal Shock Testing ■Gate Bias Testing ■Non-destructive observation of semiconductor/package delamination ■Failure analysis of power chips, etc. *For more details, please refer to the PDF materials or feel free to contact us.

Our company conducts OBIRCH analysis of SiC devices using short-wavelength lasers. SiC is a power device with less energy loss compared to conventional Si semiconductors and is attracting attention. However, since its physical properties differ from those of Si semiconductors, new methods are required for failure analysis. In the backside OBIRCH analysis of SiC-SBD using short-wavelength lasers, localized melting damage was induced in the SiC Schottky barrier diode, resulting in the generation of pseudo-leaks. Locations of pseudo-leaks that could not be confirmed in the IR-OBIRCH analysis were clearly observed in the GL-OBIRCH analysis. *For more details, please refer to the PDF materials or feel free to contact us.

We conduct failure analysis of orange LEDs that have been damaged by electrostatic discharge (ESD). LEDs that have been destroyed in ESD testing and show a decrease in luminous intensity can be analyzed using emission luminescence and the IR-OBIRCH method, allowing us to clarify the failure phenomena. We have examples such as "Comparison of brightness and characteristics between good products and ESD-damaged products" and "Luminescence analysis using emission microscopy." [Analysis Examples] ■ Comparison of brightness and characteristics between good products and ESD-damaged products - By polishing the lens part of a bullet-type LED to flatten it, dark areas were observed during brightness comparison. ■ Luminescence analysis using emission microscopy - In ESD-damaged products, dark areas were observed under forward bias, while only the damaged areas emitted light under reverse bias. ■ IR-OBIRCH and SEI analysis - Detailed damage locations were identified through IR-OBIRCH analysis of ESD-damaged products. *For more details, please refer to the PDF document or feel free to contact us.

Our company conducts "Backside Emission Analysis of SiC Devices." SiC is a power device with less energy loss compared to conventional Si semiconductors and is attracting attention. However, due to its different physical properties from Si semiconductors, new methods are required for failure analysis. In a case study of backside emission analysis of SiC MOSFETs, an overseas SiC MOSFET was subjected to ESD, creating a G-(D,S) leakage, and numerous emissions indicating the leakage points were detected through emission analysis. When the emission points were observed using TEM, destruction of the SiO2 film and damage to the SiC crystal were noted. *For more details, please refer to the PDF document or feel free to contact us.

Our company conducts observations of the diffusion layer of SiC MOSFETs using LV-SEM and EBIC methods. We can perform cross-section fabrication of specific areas using FIB, shape observation of the diffusion layer using LV-SEM/EBIC, and further through analyses of wiring structures and crystal structures using TEM, all applicable to SiC power devices. In "LV-SEM diffusion layer observation," secondary electrons (SE2) influenced by the built-in potential of the PN junction are detected with the Inlens detector. The shape of the diffusion layer can be visualized through SEM observation of the FIB cross-section. [Analysis methods using EBIC] ■ PEM/OBIRCH defect location identification ■ FIB cross-section processing ■ Low acceleration SEM ■ EBIC analysis ■ TEM *For more details, please refer to the PDF document or feel free to contact us.

At AITES, we conduct quality analysis of LCD components/products, confirming the quality status of products based on our expertise in LCDs. The target panels include SEG-LCD, AM-LCD (a-Si TFT / LTPS TFT), OLED for automotive, monitors, mobile devices, and more. We perform quality analysis using our analytical methods on the various structures of liquid crystal panels. 【Analysis Content (Excerpt)】 <Reliability/Lighting Tests> ■ Classification - Reliability Tests - Lighting Inspections ■ Analytical Methods - Oven Drive Tests - Visual Inspection *For more details, please refer to the PDF document or feel free to contact us.

Our company provides analysis and reliability evaluation services. EELS analysis and EDS analysis are analytical methods used for elemental identification by irradiating accelerated electrons onto TEM samples. In the case of "different carbon films," we conducted film quality evaluation in the nanoscale using the EELS analysis method, which is characterized by state analysis. In the EDS analysis, we detected trace amounts of N and O only in the Bottom film through spectral comparison. In the EELS analysis, the difference in the shoulder shapes of the two spectra allows for a comparison of the bonding states of N, O, and C present in the organic film. *For more details, please refer to the PDF document or feel free to contact us.

Our company provides analysis and reliability evaluation services. In the "Narrowing Down Defective Areas Using the EBAC (Absorbed Current) Method," we identify open defects and high-resistance areas in wiring using the EBAC method with a nano-probe and high-sensitivity amplifier. By sensing the absorbed current as voltage, we can obtain a contrast based on the resistance division within the wiring, allowing us to detect high-resistance defects in TEGs such as via chains. [Analysis Examples Using the EBAC Method] ■ SEM Images ■ Overlaid Images ■ Absorbed Current Images (Current Sensing) ■ Absorbed Current Images (Voltage Sensing) *For more details, please refer to the PDF materials or feel free to contact us.

We are conducting "Observation of the diffusion layer of semiconductors using FIB-SEM." By creating cross-sections using the FIB method and observing them with SEM, we visualized the diffusion layer of semiconductors and evaluated their shapes. In a case where the difference in built-in potential was visualized using the Inlens detector of the SEM, a difference in the energy of secondary electrons generated in the N-type and P-type regions occurred due to the built-in potential. This difference in trajectories is detected by the SEM detector. 【Features】 - Both shape observation and diffusion layer observation can be performed using FIB-SEM. - Shorter delivery times compared to other methods. - Concentrations can be detected up to 10E16. - While the PN interface can be visualized, the concentration differences of N+/N- and P+/P- cannot be detected. *For more details, please refer to the PDF document or feel free to contact us.

At Aites Co., Ltd., we offer analysis services for power semiconductors. Since our separation and independence from the Quality Assurance Department of IBM Japan's Yasu office in 1993, we have cultivated our own unique analysis and evaluation techniques. We can handle not only Si semiconductors but also the trending wide bandgap semiconductors. 【Features】 ■ OBIRCH analysis supports not only Si but also SiC and GaN devices ■ FIB processing is possible from either side ■ Visualization of the depletion layer formed at the PN junction ■ Elemental analysis such as EDS and EELS is also supported *For more details, please refer to the PDF document or feel free to contact us.

We provide a defect diagnosis menu for LCD panels, from confirming defects to identifying causes and conducting detailed failure analysis. In the initial analysis, we perform a status check (lighting test), panel disassembly, and optical microscope observation, tailored to the defect symptoms. In the detailed analysis, based on the diagnostic results from the initial analysis, we propose suitable methods such as surface analysis, cross-sectional analysis, and component analysis. It is also possible to speculate on the mechanisms of defect occurrence, including narrowing down the production processes that caused the defects. 【Analysis Content】 ■ Initial Analysis - Status check (lighting test), panel disassembly, optical microscope observation, conducted according to defect symptoms - Narrowing down from general areas such as cell panels and peripheral circuits to finer details ■ Detailed Analysis (additional analysis fees apply) - Based on the diagnostic results from the initial analysis, we propose suitable methods such as surface analysis, cross-sectional analysis, and component analysis - It is also possible to speculate on the mechanisms of defect occurrence, including narrowing down the production processes that caused the defects *For more details, please refer to the PDF document or feel free to contact us.

In our "LED Failure Analysis," we conduct failure analysis of LEDs using advanced sample preparation techniques and semiconductor failure analysis equipment to investigate the causes of non-lighting and brightness degradation. In the "LED Defect Mode Discrimination," we performed lighting tests after lens polishing and observed the resin of the LED, polishing it to stages a, b, and c, conducting lighting observations for (a) and (b), and optical observations of the chip through the resin for (c). Additionally, we also have categories such as "Electrical Normal" and "Open, High Resistance." 【Initial Diagnostic Items for LED Packages】 ■ Electrical Characteristics Measurement ■ Visual Inspection ■ Lens Polishing / Internal Optical Observation of the Package ■ Lighting Test (Brightness Distribution Observation) *For more details, please refer to the PDF document or feel free to contact us.

Back Surface OBIRCH / As a preprocessing step for luminescence analysis and back surface luminescence analysis, we perform back surface polishing of samples with various shapes. This is an essential preprocessing step for conducting analysis from the back surface. By analyzing from the back surface, we can not only detect luminescence while retaining defects but also observe the presence or absence of shape abnormalities. Additionally, back surface polishing can be performed on various forms of semiconductors, including packages, opened chips, and wafers, and it is also possible to perform back surface polishing while maintaining the state of the lead terminals. 【Features】 ■ Back surface analysis requires polishing because it does not transmit light due to shading by electrodes or light attenuation by high-density substrates. ■ Luminescence can be detected while retaining defects. ■ The presence or absence of shape abnormalities can also be observed. ■ Back surface polishing while maintaining the state of the lead terminals is also possible. *For more details, please refer to the PDF document or feel free to contact us.

Our "Chemical Analysis Service" analyzes various industrial products and materials, such as panel products, semiconductor products, and resin molded products, at the molecular and atomic levels. We clarify their functions, characteristics, and conditions, contributing to solving our customers' challenges. We can propose analytical methods suitable for the material to be analyzed and the purpose of the analysis. Please feel free to consult us. 【Examples of Analysis Content】 ◎ Foreign substances in products ◎ Condition of materials used ◎ Material degradation ◎ Trace components and elements contained in materials ◎ Physical properties of products and materials due to heat

Thermal analysis is a method for identifying defective areas by detecting heat generated at leak points due to applied voltage using a high-sensitivity InSb camera. By detecting the weak heat generated from shorts and leaks with a high-sensitivity InSb camera, it is possible to non-destructively identify the failure points of electronic components such as semiconductors. Furthermore, non-destructive observation can also be performed using X-ray inspection equipment. 【Features】 ■ Identifying defective areas by detecting heat generated at leak points with a high-sensitivity InSb camera ■ Analyzing samples in a non-destructive state, and also capable of analyzing electronic components that are difficult to analyze with OBIRCH or emission methods ■ Using the lock-in function to acquire phase information allows for high-precision identification of heat generation points *For more details, please refer to the PDF document or feel free to contact us.

Regarding aluminum electrolytic capacitors that have malfunctioned due to aging degradation, we conducted an internal condition check using X-ray CT, and we would like to introduce the findings. In the degraded products, the internal pressure increased due to gas generated from the decomposition of the electrolyte, and as degradation progressed, there was a risk of the electrolyte being ejected due to the opening of the pressure relief valve. Additionally, it is believed that the gradual volatilization of the electrolyte due to deformation of the rubber cap, which leads to a decrease in airtightness, ultimately results in capacity loss and open failure. 【Overview】 ■Appearance Comparison - Conducted visual inspection of both normal and degraded products. ■Internal Comparison using X-ray CT - Conducted internal observation of both normal and degraded products using X-ray CT. *For more details, please refer to the PDF document or feel free to contact us.

The biggest advantage of angled CT is that it allows for non-destructive CT observation. It is suitable for obtaining planar information and can provide information for each layer in a multilayer substrate. Additionally, by using a length measurement tool, it is also possible to measure lengths. In our measurements, we observed a difference of about 7-14% compared to the results from optical microscope images, but it seems effective for those who want to understand internal structures non-destructively. Please feel free to contact us when needed. 【Features】 ■ Non-destructive CT observation ■ Suitable for obtaining planar information ■ Capable of obtaining information for each layer in multilayer substrates *For more details, please refer to the PDF document or feel free to contact us.

Our company can perform good product characteristic measurements, defective characteristic measurements, and reliability evaluations for specific TFTs in liquid crystal panels. In the "Electrical characteristic measurement of TFTs at various temperatures," we can disassemble the monitor in display mode and measure the electrical characteristics of the pixel TFTs within the panel. In the "DC bias stress test," we apply an arbitrary DC bias to the Gate and Drain and measure the Vth shift when stress is applied to the TFT, conducting reliability verification. 【Features】 - Electrical characteristic measurements can be performed on the pixel TFTs within the panel. - Measurements can be conducted before and after annealing, under light exposure, heating, or cooling conditions. - From the measurement results, indicators such as Ion, Ioff, Vth, and mobility can be calculated. - Verification of actual values in good product analysis and clarification of causes of defects can be performed. *For more details, please refer to the PDF document or feel free to contact us.

Are you struggling with LCD analysis? We, at ITES, are here to help you find a solution! Structural Analysis: We evaluate and report on potential issues related to characteristics and structure in FPD products and advanced technologies that are constantly evolving. Defect Analysis: We approach and investigate the causes of manufacturing defects in increasing overseas products through the shortest route. Reliability Testing: Based on your objectives and needs, we propose the optimal reliability testing methods and conditions using our extensive know-how. [Contents] ■ Did you know? What is a display? ■ Panel analysis case studies ■ Tell me more! ITES's LCD analysis ■ ITES can perform these types of analysis!

The introduction of the "FIB-SEM Helios 5 UC" is scheduled to start service in November! We will provide shorter delivery times and reliable feedback than ever before. We will achieve high-throughput cross-sectional observation and analysis of a wide range of materials, from semiconductor devices such as power devices, ICs, solar cells, and light-emitting elements, to electronic components like MLCCs and soft materials. With a high-quality beam of up to 100nA, we can process large areas quickly, and by finishing the FIB at low acceleration, it is possible to produce high-quality samples with minimal damage layers. 【Main Features of Helios 5 UC】 ■ High-speed, large-area FIB processing ■ Reduced damage layers through low-acceleration finishing ■ Cryo-FIB processing ■ 3D imaging ■ Complete automation of TEM sample preparation *For more details, please refer to the PDF document or feel free to contact us.

Our company conducts "defect analysis of overseas manufactured displays." We can perform detailed analysis from confirming the phenomenon, hypothesizing the defect occurrence mechanism, to narrowing down the production processes that caused the issue. We carry out lighting observations, panel disassembly, and optical microscope observations tailored to the defect symptoms. If it is necessary to narrow down the defective areas and conduct detailed analysis, we will propose appropriate methods. 【Examples of detailed analysis (partial)】 ■ Cross-sectional observation of wiring ■ Foreign object analysis ■ Liquid crystal component analysis ■ Electrical characteristic measurement *Additional costs will be incurred. *For more details, please refer to the PDF document or feel free to contact us.

We will introduce the analysis of good products for liquid crystal displays by Aites Co., Ltd. First, we conduct optical microscope observations focusing on the FPC, FOG, COG, and sealing materials in the state of the cell panel as part of the appearance observation. Next, we dismantle the cell panel to check the sealing materials, PI film, and TFT shape. If any defects are found during the good product analysis, we will propose additional analyses such as cross-sectional observation of wiring and foreign matter analysis to investigate the cause. Please feel free to consult us when needed. [Contents of Appearance Observation] ■ Are there any corrosion or foreign matter on the FPC wiring? ■ Is there any issue with the FOG bonding? ■ Is there any issue with the COG bonding? ■ Are there any breaks or defects in the sealing material? *For more details, please refer to the PDF document or feel free to contact us.

We will introduce a case where a series of analyses, from identifying failure points to cross-sectional observation, was conducted on an oxide-based all-solid-state battery that was destroyed during reliability testing. Heat generation analysis revealed a strong tendency for heat generation on the side, and X-ray transmission observation showed a white linear contrast anomaly near the boundary where heat generation was observed in the X-ray transmission image. It is suspected that some abnormality is occurring in the white line area. When CP cross-sectional SEM observation was performed on the area where the anomaly was visible, layer delamination was observed. It is inferred that delamination occurred between the current collector and electrolyte layers due to the positive (negative) electrode layer expanding and contracting repeatedly during reliability testing. 【Case Overview】 ■ Sample Information: Oxide-based all-solid-state battery that experienced degradation due to charge and discharge testing ■ Heat Generation Analysis Result: A strong tendency for heat generation was observed on the side ■ Other Analysis Contents: - X-ray transmission observation - CP cross-sectional observation and elemental analysis using SEM *For more details, please refer to the PDF document or feel free to contact us.

Due to the suspected malfunction at the switch part of the appliance that has stopped powering on, we will introduce a case study along with the work flow. First, we check for any shape changes such as swelling, cracking, or discoloration through visual observation. In the electrical check, we verify whether the malfunction can be reproduced and whether it is an open or short circuit. An internal observation using X-rays revealed that the contact terminals inside the switch had melted, scattered, and disappeared, leading to an open circuit failure. Ultimately, we will submit a report that includes the consideration of the cause. We also welcome inquiries regarding analysis after non-destructive testing, so please feel free to consult us. 【Basics of Non-Destructive Observation】 ■1: Visual Confirmation ■2: Electrical Confirmation ■3: Internal Observation with X-rays *For more details, please refer to the PDF document or feel free to contact us.

Our company conducts thorough evaluations and verifications of FPD from various angles. In structural analysis, we assess FPD products and products incorporating advanced technologies for any potential issues in characteristics or structure, and provide reports. In defect analysis, we approach and investigate the causes of product defects in increasingly sourced overseas products via the shortest route. Additionally, in reliability testing, we propose suitable reliability testing methods and conditions based on our extensive know-how, tailored to the customer's objectives and needs. 【Our Strengths】 ■ Problem-Solving Ability - Proposals for analytical methods well-versed in the liquid crystal manufacturing process ■ Investigative Ability - Deep insights and advanced, sub-micron level fine sample processing techniques ■ Specialized Equipment - Considerations using a combination of diverse analytical instruments *For more details, please refer to the PDF document or feel free to contact us.

We will introduce the observation of the shape of conductive particles in COG implementation. ICs and liquid crystal panels are implemented using the COG method with ACF (anisotropic conductive film). A resin ball is used as the core, and a metal layer (such as nickel or gold) is deposited on its surface for conductivity. During connection, the particles deform appropriately to electrically connect the IC and the panel. To confirm the degree of particle deformation and the connection state, cross-sectional observations were conducted, revealing that the particle deformation amount was "medium," indicating an appropriate level of deformation. By examining the deformation of conductive particles from both the planar and cross-sectional directions, we can explore the correlation with display defects. Please feel free to contact us for any inquiries regarding panel-related defects. [Summary] - In implemented ICs, slight "warping" or "tilting" can cause differences in particle deformation between the edges and the center, potentially leading to display defects. - By examining the deformation of conductive particles from both the planar and cross-sectional directions, we can explore the correlation with display defects. *For more details, please refer to the PDF document or feel free to contact us.

We will introduce the three-dimensional reconstruction of failure locations using the Slice & View function of FIB-SEM. Continuous SEM images of the structure are obtained, and the resulting images are corrected for positional misalignment between SEM images and visualized in three dimensions using three-dimensional construction software (Avizo). By combining the position identification technology for cross-sectioning the failure location with the Slice & View function, it is possible to obtain continuous SEM images that retain the defective state and include information before and after the abnormal area. [Contents] ■ About Slice & View and three-dimensional reconstruction ■ Continuous SEM observation and three-dimensional reconstruction of failure locations identified by OBIRCH *For more details, please download the PDF or feel free to contact us.

This product is a SiC defect inspection device that reveals defects that had not manifested without electrical current by using UV laser irradiation, thereby shortening the evaluation cycle of research and development. 【Features】 ■ UV Irradiation - Achieves uniform laser irradiation from small sizes like chips to the entire wafer. - Calculates hole concentration from epitaxial thickness and doping concentration, and proposes radiation intensity corresponding to current density. ■ PL Measurement Function - Observes defects from multiple angles at wavelengths of 380nm, 420nm, and over 700nm. - Enables identification and classification of layered defects (buffer layer, drift layer, substrate interface) using image processing technology. - Includes mapping function with coordinates of defect occurrence. * Please feel free to consider a trial measurement (free of charge) first. * For more details, please download the PDF or feel free to contact us.

Our company will introduce the FEI "Talos F200E" transmission electron microscope system. Compared to conventional models, the resolution for TEM and STEM has improved, and performance has been significantly enhanced, allowing for EDS analysis with four detectors. Additionally, it is equipped with Drift Corrected Frame Integration (DCFI), which accumulates multiple frames while correcting for drift. 【Specifications (excerpt)】 ■ Acceleration voltage: 200kV, 80kV ■ TEM information limit: ≦0.11nm ■ STEM resolution: ≦0.14nm ■ Drift Corrected Frame Integration (DCFI) ・ Accumulates multiple frames while correcting for drift * For more details, please download the PDF or feel free to contact us.

Our company conducts consistent analysis from reliability testing to failure analysis. This allows us to confirm whether the samples meet the specifications, as well as to identify and observe the defective areas of failed samples. We propose and implement tests and analyses tailored to our customers' requests and objectives, assisting from cause investigation to problem resolution. Please feel free to contact us when you need our services. 【Analysis Flow】 ■ Specification confirmation of semiconductor devices through reliability testing ■ Identification of defective areas and observation of failure points using TEM ・ Identification of defective areas through EMS/OBIRCH analysis ・ Observation of failure points using TEM *For more details, please download the PDF or feel free to contact us.

We would like to introduce an example of failure analysis of chip resistors where abnormalities were observed. Upon investigating the cause of the malfunction of the polishing table, abnormalities were confirmed in the chip resistors on the relevant circuit board. Surface observation revealed abnormalities in the chip resistors, and it appeared that the protective film was melting. Elemental analysis using EDX detected elements such as Al and Pb from the abnormal area, raising suspicions that the undercoat layer may be exposed. Next, a cross-sectional sample was prepared through mechanical polishing, and analysis was conducted using SEM/EDX, which showed that the protective film and resistive material appeared to be melting. At Aites, we consider and propose processing, pretreatment, observation methods, and combinations tailored to the observation objectives and the composition and structure of the samples based on our accumulated know-how. Please feel free to contact us for consultations. [Analysis Content] ■ Surface Observation ■ Cross-Sectional Observation *For more details, please download the PDF or feel free to contact us.

I would like to introduce "TEM observation of PL emission sites in SiC." The basal plane dislocations (BPD) present in SiC substrates are known to amplify defects during forward bias, degrading device characteristics. In this study, we identified small BPDs using photoluminescence (PL) and observed the emission sites with TEM. By identifying defect locations and obtaining an overall view through PL, detailed observation of the defect areas with TEM becomes possible. For more details, please refer to the materials provided. 【Device Overview (Partial)】 ■ PL (Photoluminescence) ■ Equipment used: In-house PL imaging device ■ Excitation light: Ultra-high pressure mercury lamp UV light source (285–350nm) ■ The observation wavelength can be selected based on the type of defects to be captured. *For more information, please download the PDF or feel free to contact us.