List of Semiconductor Manufacturing Equipment products

  • classification:Semiconductor Manufacturing Equipment

1216~1260 item / All 5107 items

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Achieves high collection efficiency through electrostatic methods. Offers a wide range of products from large to small sizes. Also compatible with water-soluble oil mist.

  • small-mistcollector.png
  • air conditioning

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A fiber-type device that radiates laser light over a wide area has appeared!

  • Oxidation/Diffusion Device

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Electronic Patent Technology Trend Survey Report on Thermal Management of SiC/GaN High-Temperature Semiconductors

  • Other semiconductor manufacturing equipment

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Supports liquids up to 100,000 CPS! We have a proven track record of spraying various products such as syringes and catheters.

  • Coater
  • Filling and bottling machines
  • Other pumps

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Easily replace with a cable swap for signals! Display the plasma display on an LCD display!

  • Other semiconductor manufacturing equipment

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A spin sheet device that can obtain high-quality substrates at a low cost.

  • Other semiconductor manufacturing equipment

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It is possible to select an optimal acceleration based on the viscosity of the resist coating agent! We also pay attention to maintainability.

  • Photomask

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Of course, the airflow control inside the chamber, along with the excellent maintainability of the resist spin coat unit.

  • Photomask

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Consistent processing of photolithography is possible.

  • Photomask

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Practical application of ultrasonic ultrasonic technology mounted on a spin sheet device!

  • Semiconductor inspection/test equipment

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Significant reduction in footprint and purchase costs, increased throughput, and substantial improvement in substrate quality.

  • Other semiconductor manufacturing equipment

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It is a long-selling model with cumulative sales of over 200 units in the series.

  • Other semiconductor manufacturing equipment

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During scanning, uniformity improvement through peripheral speed control is also possible! We have received numerous uses and have a wealth of experience compared to conventional methods.

  • Etching Equipment

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We will introduce the new model of the automatic scrub cleaning device for mass production, as well as the photo mask cleaning device with a cumulative total of over 200 units in the series.

  • Other semiconductor manufacturing equipment

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I want to shave, but I don't want to shave too much! If you have such concerns, our unique abrasive material, which combines moderate softness with strong resilience, will solve your problem!

  • Wafer processing/polishing equipment

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Explanation of various wheels! We also answer questions by application【Free Q&A collection】.

  • Hand polishing and filing
  • Other abrasives
  • Wafer processing/polishing equipment

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Easily achieve communication tests for 1553 signals! DBT300 Network Tester

  • Tester

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It is a high-performance vacuum deposition source that can be used as a high-temperature heating cell for vacuum applications, with an organic deposition source up to 800°C and a metal deposition sour...

  • Evaporation Equipment
  • Heating device
  • Electric furnace

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iPROS_MiniLab-026_220x220.jpg

★☆★☆【MiniLab-026】Small Thin Film Experimental Device for R&D Development★☆★☆

This is a flexible thin film experimental device for R&D that eliminates waste by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug & Play feel, achieving compact size, space-saving design, simple operation, and high cost performance. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. There is also a glove box storage type available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many more options available. *Please first contact us with your required specifications, and we will configure the system to meet your needs.

<30W Low power - Etching control precision 10mW Achieving damage-free and delicate etching processing.

  • Etching Equipment

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iPROS_MiniLab-026_220x220.jpg

★☆★☆【MiniLab-026】Small Thin Film Experimental Device for R&D Development★☆★☆

This is a flexible thin film experimental device for R&D that eliminates waste by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug & Play feel, achieving compact size, space-saving design, simple operation, and high cost performance. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. There is also a glove box storage type available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many more options available. *Please first contact us with your required specifications, and we will configure the system to meet your needs.

◉ Short time: Easily conduct graphene synthesis experiments in just 30 minutes per batch. ◉ High-precision temperature and pressure control. ◉ Sophisticated software.

  • CVD Equipment

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4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Introduction of various experimental devices for research and development in semiconductors, electronic devices, fuel cells, displays, and thin film experiments.

  • Sputtering Equipment
  • Evaporation Equipment
  • Annealing furnace

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1.jpg

4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Composite thin film experimental device nanoPVD-ST15A capable of mixed installation of vacuum deposition (metal and organic deposition sources) and sputtering cathodes.

  • Sputtering Equipment
  • Evaporation Equipment

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4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely supports various purposes from research and development to small-scale production.

  • Annealing furnace
  • Heating device
  • Electric furnace

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4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely accommodates various purposes from research and development to small-scale production.

  • Annealing furnace

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1.jpg

4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Low-cost minimum necessary configuration (manual control) applicable as tubular furnace, diffusion furnace, and thermal CVD.

  • Oxidation/Diffusion Device

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1.jpg

4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Compact, space-saving, energy-efficient! High-performance ultra-high temperature experimental furnace for R&D.

  • Annealing furnace

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1.jpg

4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

CVD, PVD (evaporation, sputtering, etc.) high vacuum, ultra-high temperature plate heater for wafer and small chip heating with excellent uniformity and reproducibility.

  • Other semiconductor manufacturing equipment
  • Annealing furnace
  • CVD Equipment

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1.jpg

4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

High-temperature crucible heating heater for vacuum use. A versatile heater unit that can be used as an organic deposition source at 800°C and a metal deposition source at 1500°C.

  • Evaporation Equipment
  • Heating device
  • Electric furnace

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iPROS_MiniLab-026_220x220.jpg

★☆★☆【MiniLab-026】Small Thin Film Experimental Device for R&D Development★☆★☆

This is a flexible thin film experimental device for R&D that eliminates waste by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug & Play feel, achieving compact size, space-saving design, simple operation, and high cost performance. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. There is also a glove box storage type available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many more options available. *Please first contact us with your required specifications, and we will configure the system to meet your needs.

An ultra-high temperature substrate heating stage that allows for substrate elevation, rotation, and RF/DC substrate bias all in one device! 'All-In-One' component.

  • Sputtering Equipment

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1.jpg

4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Max 1000℃, maximum 3 systems for MFC, APC pressure control, compatible with 4" or 6" substrates, high vacuum annealing equipment (<5 × 10^-7 mbar)

  • Annealing furnace

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1.jpg

4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

We have incorporated all the latest vacuum deposition technology into a compact benchtop-sized device that can effectively utilize limited lab space.

  • Evaporation Equipment

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1.jpg

4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Plasma CVD equipment compatible with wafer sizes of Φ3 inch and Φ4 inch. Rapid synthesis of clean, high-quality graphene while suppressing impurities.

  • CVD Equipment

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iPROS_MiniLab-026_220x220.jpg

★☆★☆【MiniLab-026】Small Thin Film Experimental Device for R&D Development★☆★☆

This is a flexible thin film experimental device for R&D that eliminates waste by integrating the necessary minimum modules and controllers into a 19" compact rack with a Plug & Play feel, achieving compact size, space-saving design, simple operation, and high cost performance. It supports magnetron sputtering (up to 3 sources) or resistance heating evaporation (metal sources up to 2, organic materials x4), and can also be equipped with a substrate heating stage, allowing for the production of annealing devices and RF etching. There is also a glove box storage type available (specifications to be discussed). We offer a wide range of optional components that can be flexibly customized. ◉ Φ2 inch magnetron cathode (up to 3 sources) ◉ Resistance heating evaporation source filament, crucible, boat type (up to 4 poles with automatic switching via controller) ◉ Organic evaporation cell: 1cc or 5cc ◉ Glove box compatible (optional, specifications to be discussed) ◉ Other options: simultaneous film deposition, HiPIMS, automatic film deposition controller, custom substrate holders, load lock, substrate rotation/heating/cooling, and many more options available. *Please first contact us with your required specifications, and we will configure the system to meet your needs.

High-efficiency magnetron sputtering cathode compatible with RF, DC, and pulse DC for depositing metals and insulators without impurities. It also excels in maintainability.

  • Sputtering Equipment

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1.jpg

4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

We have incorporated all the latest vacuum deposition technology into a compact benchtop-sized device that can effectively utilize limited lab space.

  • Evaporation Equipment

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1.jpg

4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Hot Wall Type Thermal CVD Equipment: A compact, high-performance CVD device ideal for fundamental research.

  • CVD Equipment
  • Annealing furnace
  • Heating device

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4-Yen Multi-Sputtering Device 【MiniLab-S060】

4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.

Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device: Metal deposition, organic deposition, and sputter cathode installed in a compact frame.

  • Sputtering Equipment
  • Evaporation Equipment
  • Annealing furnace

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【MiniLab】 Evaporation/Sputtering Dual Chamber System

Two thin film experimental devices are connected by a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected via the load lock. With Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB evaporation: 7cc crucible x 6 - Resistance heating evaporation x 2 - Organic evaporation limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron cathode x 4 for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma etching stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique "soft etching" technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)

Consider the ion trajectories in electrostatic and magnetic fields, dielectrics, electrodes, conductors, coils, magnets, magnetic materials, and space charge!

  • Electron beam lithography equipment

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Consider the ion trajectories in electrostatic and magnetic fields, dielectrics, electrodes, conductors, coils, magnets, magnetic materials, and space charge!

  • Electron beam lithography equipment

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Consider the ion trajectories in electrostatic and magnetic fields, dielectrics, electrodes, conductors, coils, magnets, magnetic materials, and spatial electrification!

  • Electron beam lithography equipment

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Consider the ion trajectories in electrostatic and magnetic fields, dielectrics, electrodes, conductors, coils, magnets, magnetic materials, and space charge!

  • Electron beam lithography equipment

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CE marking compliant product for peace of mind! Quality and trust with ultra-low-speed dip coater.

  • Other semiconductor manufacturing equipment
  • Surface treatment contract service
  • Other surface treatment equipment

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Suitable for the film formation of nanomaterials (metal nanoparticles, nanowires, nanosheets, materials for nanoelectronics)!

  • Sputtering Equipment

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High-end sputtering process for optical films used in aerospace engineering and medical/bio applications is possible!

  • Sputtering Equipment

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Ion beam sputtering equipment for research and development as well as small-scale production!

  • Sputtering Equipment

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DC pulse sputtering is possible (reactive sputtering of insulating films using conductive targets)!

  • Sputtering Equipment

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