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CVD Equipment Product List and Ranking from 21 Manufacturers, Suppliers and Companies

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.

CVD Equipment Manufacturer, Suppliers and Company Rankings

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.

  1. サムコ Kyoto//Industrial Machinery
  2. 天谷製作所 Saitama//Industrial Machinery
  3. 伯東 本社 Tokyo//Electronic Components and Semiconductors
  4. 4 ジャパンクリエイト Saitama//Testing, Analysis and Measurement
  5. 5 和泉テック Miyagi//Industrial Machinery
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CVD Equipment Product ranking

Last Updated： Aggregation Period:Sep 24, 2025～Oct 21, 2025
This ranking is based on the number of page views on our site.

  1. Plasma CVD equipment for thick film formation of SiO2 サムコ
  2. Mass production continuous atmospheric pressure CVD equipment 'A6300S' 天谷製作所
  3. CVD・MOCVD customized equipment ハイテック・システムズ
  4. CVD Equipment for Synthesizing Single Crystal High Purity Diamonds DCVD-51A アリオス
  5. 4 Single-wafer atmospheric pressure CVD device 'A200V' 天谷製作所

CVD Equipment Product List

16～30 item / All 41 items

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Plasma CVD device for three-dimensional object experiments (DLC, amorphous SiC)

Plasma CVD device for three-dimensional object experiments (DLC, amorphous SiC)

The compatible film types are DLC, amorphous SiC, etc.! Equipped with a substrate heating mechanism (maximum set temperature: 500°C).

We would like to introduce our "Plasma CVD System for 3D Objects" that we handle. This system can deposit films on three-dimensional objects, and compatible film types include DLC and amorphous SiC, among others. It operates via PC control (sequencer control), allowing for fully automated operation and data logging. We design and manufacture equipment tailored to our customers' needs and budgets, from experimental devices to production systems. Please feel free to contact us for inquiries. 【Features】 ■ Experimental plasma CVD system capable of depositing films on three-dimensional objects ■ Compatible film types: DLC, amorphous SiC, etc. ■ Equipped with a substrate heating mechanism (maximum set temperature: 500°C) ■ Fully automated operation and data logging via PC control (sequencer control) *For more details, please refer to the PDF document or feel free to contact us.

  • Plasma Generator
  • CVD Equipment

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[Manufacturing Results] Plasma CVD Equipment for 3D Object Experimentation

[Manufacturing Results] Plasma CVD Equipment for 3D Object Experimentation

Introduced in the surface treatment process! The material of the vacuum chamber is made of stainless steel, with examples of products achieving a vacuum level of less than 1 Pa.

We would like to introduce our achievements in manufacturing a "Plasma CVD system for three-dimensional objects" for the automotive and motorcycle parts manufacturing industry. We have introduced a product equipped with a substrate heating mechanism that allows for the deposition of DLC, amorphous SiC, and other materials on three-dimensional objects (maximum set temperature: 500°C). Additionally, it features PC operation (sequencer control) for fully automated data logging. Please feel free to contact us when you need assistance. 【Overview of Achievements】 ■ Experimental plasma CVD system capable of film deposition on three-dimensional objects ■ Compatible film types: DLC, amorphous SiC, etc. ■ Equipped with a substrate heating mechanism (maximum set temperature: 500°C) ■ Fully automated and data logging via PC operation (sequencer control) *For more details, please refer to the related links or feel free to contact us.

  • Vacuum Equipment

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Plasma CVD equipment "SHUTTLELINE(R) Series"

Plasma CVD equipment "SHUTTLELINE(R) Series"

Compact and versatile! This is a high-performance device that can also be adapted for device evaluation processes.

The "SHUTTLELINE(R) series" is a flexible semiconductor manufacturing device that supports PECVD and dry etching for thin film deposition and failure analysis processes. It is compatible with RIE/ICP-RIE and PECVD/ICP-CVD, and is a compact device that can be used for various applications with a range of options. It is recommended for companies and academia that need a compact lab-scale device for R&D or laboratories, or for those looking for a device that can perform both film deposition and etching in one unit. 【Features】 ■ High-precision, damage-free etching process ■ Supports various wafer sizes and shapes, including dies, packaged dies, wafer pieces, and full wafers ■ The shuttle system eliminates the need for hardware changes for different sample sizes ■ Multi-functional support for film deposition/etching in one unit ■ Proven adoption worldwide, with local support through Plasma-Therm LLC's global network *For more details, please feel free to contact us.

  • Other semiconductor manufacturing equipment

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Continuous Atmospheric Pressure CVD System for solar cell mass production (AMAX1000S)

Continuous Atmospheric Pressure CVD System for solar cell mass production (AMAX1000S)

For mass production of crystalline Si solar cells/For NSG(SiO2)/PSG/BSG deposition High productivity/Continuous atmospheric pressure CVD (APCVD) system

AMAX1000S is a continuous atmospheric pressure CVD system (APCVD system) developed for solar cell products based on the achievements of the "AMAX" series. 【Features】 　・Compatible with 156 mm square/125 mm square wafers 　・High productivity of 1500 wafers per hour 　・Compatible with thin wafers for solar cells 【Applications】 　・Hard mask for diffusion/ion implantation, Sacrificial deposition (NSG) 　・Passivation deposition (protective deposition, insulating deposition) (NSG) 　・Source deposition for solid phase diffusion (BSG, PSG)/Cap deposition (NSG) *For more details, please contact us or download the catalog to view.

  • CVD Equipment

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Plasma CVD equipment

Plasma CVD equipment

Plasma CVD equipment

● Adopts a tray cassette system. 1. Achieves high throughput by reducing transport time. 2. Supports wafers from φ2 inches to φ8 inches by changing trays. ● Adopts a vacuum cassette chamber. 1. Achieves high throughput with a single vacuum exhaust per cassette. 2. Avoids contamination effects and prevents oxidation of the wafer surface. ● Further improves the reliability of the PD-220L reaction chamber, which has a rich track record of deliveries.

  • CVD Equipment

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Plasma CVD equipment 'PD-270STLC / PD-2201LC'

Plasma CVD equipment 'PD-270STLC / PD-2201LC'

Tensile and compressive stress control is possible! It can be flexibly installed to fit the space.

At Samco, Inc., we handle the plasma CVD equipment 'PD-270STLC/PD-2201LC'. The 'PD-270STLC' allows for excellent coverage during film formation at the top, middle, and bottom. Additionally, the 'PD-2201LC' can accommodate a wide range of customer requests, from simultaneous film formation of multiple small-diameter wafers using tray transport to highly uniform film formation through single wafer processing. 【Features】 <PD-270STLC> ■ SiN film formation using liquid precursor SN2 ■ Excellent coverage during film formation at the top, middle, and bottom *For more details, please refer to the PDF document or feel free to contact us.

  • Other physicochemical equipment

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Custom-made production achievements: CVD equipment

Custom-made production achievements: CVD equipment

We have a track record of equipment such as 'plasma CVD systems for metal containers' and 'ICP-type MOCVD systems'!

We would like to introduce the custom manufacturing achievements of Japan Create Co., Ltd. regarding "CVD equipment." We have a track record that includes "Plasma CVD equipment for solar cells," "Plasma CVD equipment for three-dimensional objects," "Plasma CVD equipment for metal containers," and "ICP-type MOCVD equipment." Sample processing is being conducted using demo units. Please feel free to contact us if you have any inquiries. 【Manufacturing Achievements (Excerpt)】 ■ Plasma CVD equipment for solar cells ■ Plasma CVD equipment for three-dimensional objects ■ Research and development load-lock type plasma CVD equipment ■ Plasma CVD equipment for metal containers ■ Plasma CVD equipment for medical containers *For more details, please refer to the PDF materials or feel free to contact us.

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  • CVD Equipment

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Oxide/Nitride Plasma CVD Equipment

Oxide/Nitride Plasma CVD Equipment

Controllable extensive membrane properties! Significant particle reduction and improved productivity.

The "Oxide/Nitride Plasma CVD Equipment" achieves low stress, high hardness, and high insulation through a dual-frequency independent application method. Significant particle reduction and improved productivity are achieved through a radical plasma cleaning system. We can also manufacture multi-chamber specifications and various custom designs, so please feel free to contact us when needed. 【Features】 ■ Achieves low stress, high hardness, and high insulation through a dual-frequency independent application method ■ Excellent film thickness distribution and reproducibility ■ Reduction of metal contamination through special surface treatment ■ Control of a wide range of film properties ■ Abundant accumulated data *For more details, please refer to the PDF document or feel free to contact us.

  • CVD Equipment

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Plasma CVD device for three-dimensional objects

Plasma CVD device for three-dimensional objects

A simple structure with high versatility! It adopts a unique plasma control method.

The "Plasma CVD Equipment for Three-Dimensional Objects" has a wealth of accumulated data and employs a unique plasma control method. The chamber volume is 1m3. It features a simple structure with high versatility, capable of multi-stage bulk processing. We can also manufacture multi-chamber specifications and various custom orders, so please feel free to contact us when needed. 【Features】 ■ Chamber volume: 1m3 ■ Unique plasma control method ■ Capable of multi-stage bulk processing ■ Simple structure with high versatility ■ Can deposit films on various product materials *For more details, please refer to the PDF document or feel free to contact us.

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  • CVD Equipment

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ICPECVD『SI 500 D』

ICPECVD『SI 500 D』

Control of ion density by ICP power! Achieving low-temperature film formation, low damage, and high conformality.

The "SI 500 D" is an ICPECVD that controls ion density using ICP power. With a high plasma density of 10^12 [ions/cm3] achieved by the unique PTSA200ICP source, it enables low-temperature film deposition, low damage, and high conformality. Please feel free to consult us when you need assistance. 【Features】 ■ Control of ion density using ICP power ■ Control of ion energy with optional bias power ■ Optimization of the process through reactor pressure, separated gas supply lines, and adjustment of the spacing between the ICP source and substrate electrode *For more details, please refer to the PDF materials or feel free to contact us.

  • CVD Equipment

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Tube furnace CVD device

Tube furnace CVD device

This single device can achieve the generation of long-length powder CNTs, the growth of vertically oriented CNTs on substrates, and the deposition of carbon films on powder sample surfaces.

Optionally, by adding introduction units for ammonia gas and other CVD gases, as well as introduction units for solid or liquid precursors for CVD reactions, it is also possible to perform nitriding treatment and film formation of chalcogenide layered materials.

  • Other processing machines

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Rotary kiln type continuous CVD apparatus

Rotary kiln type continuous CVD apparatus

Continuous thermal/CVD processing of powders, continuous CNT synthesis, etc.

This is a continuous CVD processing device with a continuous feed/recovery mechanism for powder samples, enabled by the inclination and rotation mechanism of the reaction tube. It allows for mass production of carbon coating on powder sample surfaces, heat treatment, CVD processing, doping treatment, and more. It is suitable for the large-scale production of large-area oriented CNT substrates and high-yield powder-type CNTs.

  • Other processing machines

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CVD equipment

CVD equipment

CVD equipment

●Features This device is a thin film fabrication apparatus using the CVD method, which supplies raw material gases (gases, liquids, solids) to the CVD reaction chamber, causing chemical reactions to occur in the gas phase or on the surface of the substrate material, and utilizing gas-phase reactions and surface reactions to deposit the desired thin film material onto the substrate. Methods for chemically activating the raw material gases (exciting them) include thermal, plasma, and optical (laser, ultraviolet, etc.), with corresponding devices such as thermal CVD, plasma CVD, and optical CVD.

  • Analytical Equipment and Devices
  • Other laboratory equipment and containers

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CVD device "Nano Carbon Deposition Device"

CVD device "Nano Carbon Deposition Device"

Three types of sedimentation devices are available! Please choose according to your needs.

We would like to introduce the "Nano Carbon Deposition Device" handled by Katagiri Engineering Co., Ltd. This product is a CVD device capable of synthesizing nano carbon materials. In addition to the "CND-050LP," we offer a large-area nano carbon deposition device, the "LCND-200," and a PN nano carbon deposition device, the "NCD-050W." You can choose according to your application. 【Features】 ■ Capable of synthesizing nano carbon materials ■ Three types in the lineup ■ Selectable based on application *For more details, please refer to the PDF document or feel free to contact us.

  • CVD Equipment

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Atmospheric Pressure CVD Equipment "AMAX800V"

Atmospheric Pressure CVD Equipment "AMAX800V"

Excellent uniformity of film thickness and impurity concentration. Atmospheric pressure CVD equipment that achieves high productivity and low cost.

The atmospheric pressure CVD device "AMAX800V" is a continuous atmospheric pressure CVD system compatible with φ200mm wafers, utilizing the reaction characteristics of monosilane gas to form insulating films such as USG, PSG, BPSG, and back surface protective films on silicon substrates. It achieves high throughput through improvements in the transport mechanism. The adoption of SiC trays minimizes heavy metal contamination, and stable process performance is achieved with less thermal aging. 【Features】 ○ High throughput ○ Excellent film formation characteristics ○ Maintenance-friendly ○ Reduced metal contamination (optional) For more details, please contact us or download the catalog.

  • CVD Equipment

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