We have compiled a list of manufacturers, distributors, product information, reference prices, and rankings for CVD Equipment.
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CVD Equipment Product List and Ranking from 21 Manufacturers, Suppliers and Companies

Last Updated: Aggregation Period:Sep 24, 2025~Oct 21, 2025
This ranking is based on the number of page views on our site.

CVD Equipment Manufacturer, Suppliers and Company Rankings

Last Updated: Aggregation Period:Sep 24, 2025~Oct 21, 2025
This ranking is based on the number of page views on our site.

  1. サムコ Kyoto//Industrial Machinery
  2. 天谷製作所 Saitama//Industrial Machinery
  3. 伯東 本社 Tokyo//Electronic Components and Semiconductors
  4. 4 ジャパンクリエイト Saitama//Testing, Analysis and Measurement
  5. 5 和泉テック Miyagi//Industrial Machinery

CVD Equipment Product ranking

Last Updated: Aggregation Period:Sep 24, 2025~Oct 21, 2025
This ranking is based on the number of page views on our site.

  1. Plasma CVD equipment for thick film formation of SiO2 サムコ
  2. Mass production continuous atmospheric pressure CVD equipment 'A6300S' 天谷製作所
  3. CVD・MOCVD customized equipment ハイテック・システムズ
  4. CVD Equipment for Synthesizing Single Crystal High Purity Diamonds DCVD-51A アリオス
  5. 4 Single-wafer atmospheric pressure CVD device 'A200V' 天谷製作所

CVD Equipment Product List

31~41 item / All 41 items

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Mass production continuous atmospheric pressure CVD equipment 'A6300S'

Adopting SiC trays! A system that enables mass production while keeping costs down.

The "A6300S" is a continuous atmospheric CVD system for mass production that supports small-diameter wafers with a throughput of 120 wafers per hour. Equipped with an automatic tray exchange system and a head lifting mechanism, it reduces maintenance time and extends production time, while also considering the mass production needs of customers and the safety of operators. 【Features】 ■ High productivity: Capable of processing 120 wafers per hour ■ Heavy metal contamination countermeasures: Prevents metal contamination from the backside of the wafer ■ High performance: Adopts the A63 type head to achieve good film thickness distribution ■ Improved maintainability: Allows for safe maintenance in a short time ■ Footprint: Successfully minimized the number of trays to reduce the equipment area ■ Safety: Ensures high safety through interlocks and optimization of equipment mechanisms *For more details, please refer to the PDF document or feel free to contact us.

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Plasma CVD equipment

It is a device with numerous achievements in mass production of power devices, LEDs, MEMS, etc.

The range of membrane quality control is very broad, allowing us to meet the various membrane quality requirements of our customers. Additionally, we have achieved stable automatic transport for compound wafers and special wafers, which had issues with conventional equipment, contributing to improved yield. In our company, we actively customize each device to reflect our customers' requests as much as possible. We have a demonstration machine permanently installed in-house, so please feel free to consult with us.

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Plasma CVD equipment

Includes a leakage microwave detection feature! The sample installation is exchanged using a motorized up-and-down mechanism from the bottom.

The "Plasma CVD Device" is a CVD device that has been extremely simplified for experimental use. The mass flow main unit uses manufacturer products. The display and setting devices are custom-made by our company, which helps reduce the price. Additionally, it is equipped with a mechanism that allows the distance between the plasma generation area and the sample to be adjusted by moving the microwave waveguide up and down. 【Features】 ■ Extremely simplified for experimental use ■ Equipped with a mechanism to move the microwave waveguide up and down ■ Sample attachment is interchangeable via a motorized up-and-down mechanism from the bottom ■ Includes a leakage microwave detection device ■ All internal mechanisms are compactly designed to save space *For more details, please refer to the external link page or feel free to contact us.

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レーザーCVD装置

サンプルMAXサイズ10mm口!耐熱、断熱セラミック研究用途でご利用いただけます

『レーザーCVD装置』は、CO2レーザーをあてながらCVD成膜する 装置です。 600℃までヒーター加熱。チャンバーサイズは、φ300 × 300Hです。 耐熱、断熱セラミック研究用途でご利用いただけます。 【仕様】 ■サンプルMAXサイズ10mm口 ■600℃までヒーター加熱 ■RPにて排気、MAX 5Pa ■O2 x 1 Ar x 4系統 MFC仕様 ■φ300 x 300H チャンバーサイズ ※詳しくは外部リンクページをご覧いただくか、お気軽にお問い合わせ下さい。

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High-frequency laser CVD device

Easily set up the sample! You can introduce the YAG laser from the external viewport to perform film deposition.

This product is a CVD device that allows film formation by introducing a YAG laser from an external viewport, with a sample stage (equipped with an automatic rotation mechanism) located at the center of a high-frequency heating coil. The sample inlet is located on the side of the chamber and can be opened and closed from both sides, making it easy to set the sample. It is also possible to install a gas supply system (up to 5 systems) at the top of the chamber as an option. 【Features】 ■ Film formation can be achieved by introducing a YAG laser from an external viewport ■ The sample inlet is located on the side of the chamber and can be opened and closed from both sides ■ Easy sample setup ■ Option to install a gas supply system (up to 5 systems) at the top *For more details, please refer to the external link page or feel free to contact us.

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Silicon oxide film deposition CVD equipment

Compatible with 3-inch wafers! It features a compact design that achieves space-saving.

This product is a CVD device for depositing silicon oxide. It features a compact design that achieves space-saving. The internal surface treatment is electropolishing, and the chamber material is SUS316. Additionally, it is compatible with 3-inch wafers. 【Features】 ■ Deposits silicon oxide ■ Compact design that achieves space-saving ■ Compatible with 3-inch wafers *For more details, please refer to the external link page or feel free to contact us.

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The ideal small plasma CVD device for research and prototyping: 'VC-R400G'

Adopting a unique LIA method plasma source, we achieve ultra-fast, high-quality vacuum deposition on flat substrates such as glass and metal!

The "VC-R400G" is a plasma CVD device that employs a unique LIA (Low Inductance Antenna) plasma source, achieving ultra-fast and high-quality vacuum deposition on flat substrates such as glass and metal. It is suitable for experiments, research, evaluation, and prototyping. By using the LIA-type inductively coupled plasma (LIA-ICP), it realizes fast, high-precision, and low-damage vacuum deposition. With multi-point control, it ensures finer uniformity. It offers a variety of manual and automatic options. 【Features】 ■ Suitable for experiments, research, evaluation, and prototyping ■ Achieves fast, high-precision, and low-damage vacuum deposition ■ Ensures finer uniformity through multi-point control of LIA ■ Realizes ultra-fast deposition more than five times compared to conventional methods ■ A wide range of options available *For more details, please refer to the related links or feel free to contact us.

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Agnitron Corporation Research and Development (R&D) - MOCVD Equipment for Mass Production

We provide MOCVD equipment for high-performance, high-throughput advanced compound semiconductors, uniquely developed by Agnitron.

Agnitron's Agilis series is a flexible platform equipped with configuration options that enable advanced compound semiconductor epitaxy growth. In the small chambers for research and development (R&D), single or dual chamber configurations can be selected, while the large chambers for mass production allow for a wide range of materials to be grown epitaxially in a single chamber configuration.

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Plasma CVD device "210D model"

Supports wafers up to φ200mm! This is a plasma CVD system capable of both film deposition and etching.

The "210D model" is a film deposition device using Inductively Coupled Plasma (ICP). By replacing hardware on-site, it can be used as an inductively coupled plasma etching device in just a few minutes of work. With a compact body and a variety of options, it supports various applications such as thin film deposition and trench patterning. 【Features】 ■ Can be used as plasma CVD and RIE with simple hardware replacement ■ Approximately 30% smaller footprint compared to industry standards ■ Easy to operate with an intuitive graphic interface ■ Custom specifications can be accommodated upon request *For more details, please feel free to contact us.

  • Etching Equipment

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The ideal small plasma CVD device for research and prototyping: 'VC-R400F'

Adopting a unique LIA method plasma source, we achieve ultra-fast, high-quality vacuum deposition on resin films and metal foils!

The "VC-R400F" is a plasma CVD device that employs a unique LIA (Low Inductance Antenna) method plasma source, enabling ultra-fast and high-quality vacuum film deposition on resin films and metal foils. It is well-suited for experiments, research, evaluation, and prototyping. By using the LIA method of inductively coupled plasma (LIA-ICP), it achieves fast, high-precision, and low-damage vacuum film deposition. With multi-point control, it ensures finer uniformity. It offers a variety of manual, automatic, and optional features. 【Features】 ■ Well-suited for experiments, research, evaluation, and prototyping ■ Achieves fast, high-precision, and low-damage vacuum film deposition ■ Ensures finer uniformity through multi-point control of LIA ■ Realizes ultra-fast film deposition more than five times compared to conventional methods ■ A wide range of options available *For more details, please refer to the related links or feel free to contact us.

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