List of Annealing furnace products
- classification：Annealing furnace
1～60 item / All 80 items
Reduce the workload from handling heavy objects! Here are five case studies that solved customer challenges! We are also accepting free consultations and tests tailored to your work!
- Other conveying machines
Presentation of explanatory materials on JIS and ISO standards. We propose suitable safety barriers from a rich product series! Free rental of demo kits.
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Know-how in designing and manufacturing various devices! Powerful support with abundant knowledge and experience.
- Annealing furnace
- Heating device
- controller
Maximum operating temperature 2000℃ Semi-automatic control Ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace
- Heating device
- Annealing furnace
- Electric furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Compact and space-saving! Ideal for research and development, flexible configuration for purposes such as deposition, sputtering, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Storage-compatible glove box PVD flexible thin film experimental device, featuring a tall chamber with a height of 570mm, contributes to improved uniformity during deposition.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
A semi-custom-made thin film experimental device that can be assembled with the desired configuration for processes such as sputtering, EB (electron beam), and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Compact and space-saving! Ideal for research and development. Flexible configuration for purposes such as deposition, sputtering, and annealing.
- Evaporation Equipment
- Sputtering Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Due to its modular embedded design, it is possible to flexibly assemble dedicated machines according to the required film formation methods. A compact thin-film experimental device that can accommodat...
- Sputtering Equipment
- Evaporation Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
A Comprehensive Explanation of the Benefits and Applications of Formic Acid Reduction (Manufactured by Unitec Japan)
- Annealing furnace
Expansion to advanced packages: Processing is possible on a 510×515mm substrate.
- Sputtering Equipment
- Etching Equipment
- Annealing furnace
Tabletop small-sized experimental furnace - space-saving with a maximum operating temperature of 2000℃! We also manufacture metal furnaces for reducing atmospheres.
- Heating device
- Electric furnace
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Maximum operating temperature 2000℃ Semi-automatic control Ultra-high temperature experimental furnace (carbon furnace, tungsten metal furnace) Compact and space-saving experimental furnace
- Heating device
- Annealing furnace
- Electric furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Utilizing hydrogen gas, stainless steel bright treatment is possible!
- stainless
- Annealing furnace
- Electric furnace
Heat recovery type, low running cost, hot air dryer for painting.
- Other painting machines
- Drying Equipment
- Annealing furnace
Heat recovery type, low running cost, paint drying oven.
- Other painting machines
- Drying Equipment
- Annealing furnace
Dryer Dry Tech Price Information Public Site Now Available
We have launched a price information website for the painting-specific dryer, Drytech. The site features product information and sizes focused on standard models of Drytech, both front and single-door types, as well as custom products and options, including performance and price information. We have disclosed price information to facilitate a quicker process from consideration and decision-making to implementation. Please make use of it.
Max 1000℃, MFC maximum 3 systems, APC pressure control, compatible with 4" or 6" substrates, high vacuum annealing equipment (<5 × 10^-7 mbar)
- Annealing furnace
- Heating device
- Electric furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Supports tray transport! Achieves excellent substrate temperature distribution and gas flow method.
- Annealing furnace
- Heating device
Maximum substrate heating temperature of 1000℃! Reduces element loss specific to the substrate surface heating process!
- Heating device
- Annealing furnace
Usable from R&D to mass production! Vertical furnace with automatic transport compatible with 3 to 6-inch wafers.
- Annealing furnace
The furnace dimensions are 3.5m wide, 3.5m high, and 7.0m deep. It is capable of heat treatment for large workpieces!
- Heating device
- Industrial Furnace
- Annealing furnace
Introduction of various experimental devices for research and development in semiconductors, electronic devices, fuel cells, displays, and thin film experiments.
- Sputtering Equipment
- Evaporation Equipment
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely supports various purposes from research and development to small-scale production.
- Annealing furnace
- Heating device
- Electric furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
6 to 8 inch ultra-high temperature wafer annealing equipment, a high-performance machine that widely accommodates various purposes from research and development to small-scale production.
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Compact, space-saving, energy-efficient! High-performance ultra-high temperature experimental furnace for R&D.
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
CVD, PVD (evaporation, sputtering, etc.) high vacuum, ultra-high temperature plate heater for wafer and small chip heating with excellent uniformity and reproducibility.
- Other semiconductor manufacturing equipment
- Annealing furnace
- CVD Equipment
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Max 1000℃, maximum 3 systems for MFC, APC pressure control, compatible with 4" or 6" substrates, high vacuum annealing equipment (<5 × 10^-7 mbar)
- Annealing furnace
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
![[Nanofurnace] BWS-NANO Thermal CVD ...](https://image.mono.ipros.com/public/product/image/0d0/2000191194/IPROS99314670218218380543.jpeg?w=280&h=280){kind=small}
Hot Wall Type Thermal CVD Equipment: A compact, high-performance CVD device ideal for fundamental research.
- CVD Equipment
- Annealing furnace
- Heating device
4-Yen Multi-Sputtering Device 【MiniLab-S060】
4 cathodes with Φ2 inch configuration Simultaneous film deposition: 3-component simultaneous deposition (RF 500W or DC 850W) + HiPIMS (PulseDC 5KW) x 1 Power distribution and configuration settings for 4 cathodes can be freely changed via the HMI screen using the plasma relay switch 3 MFC systems (Ar, O2, N2) for reactive sputtering RIE etching stage RF 300W (main chamber) + <30W soft etching (LL chamber) Substrate heating: Max 500℃, 800℃, or 1000℃ (C/C or SiC coating) Substrate rotation and vertical movement (automatically controlled by stepping motor) APC automatic control: Upstream (MFC flow adjustment) or downstream (automatic valve opening adjustment on the exhaust side) Dimensions: 1,120(W) x 800(D) ● Mixed specifications for resistance heating deposition, organic material deposition, EB deposition, PECVD, etc. are also possible.
Sputter Cathode and Co-evaporation Source Mixed Thin Film Experimental Device: Metal deposition, organic deposition, and sputter cathode installed in a compact frame.
- Sputtering Equipment
- Evaporation Equipment
- Annealing furnace
【MiniLab】 Evaporation/Sputtering Dual Chamber System
Two thin film experimental devices are connected by a load lock mechanism. Different film deposition devices (sputtering - evaporation, etc.) are seamlessly connected via the load lock. With Moorfield's unique load lock system, connections to the process chamber on the left, right, and rear are also possible (see photo below). 1. MiniLab-E080A (Evaporation Device) - EB evaporation: 7cc crucible x 6 - Resistance heating evaporation x 2 - Organic evaporation limit x 2 2. MiniLab-S060A (Sputtering Device) - Φ2" Magnetron cathode x 4 for simultaneous sputtering - Compatible with both DC and RF power supplies 3. Load Lock Chamber - Plasma etching stage In the load lock chamber, plasma cleaning of the substrate surface is performed using the "RF/DC substrate bias stage," and the company's unique "soft etching" technology allows for a <30W low-power, damage-free plasma etching stage. This enables delicate etching processes that are prone to damage, such as 2D (removal of resists like PMMA), graphene delamination, and etching of Teflon substrates. (*This can also be installed in the main chamber stage.)
No warm-up/cool-down time. High-quality continuous annealing processing is possible.
- Annealing furnace
- Other processing machines
By achieving ultra-high temperature treatment and excellent temperature uniformity, batch processing of boule ingots and wafers is possible, minimizing defects and dislocations.
- Annealing furnace
- Other semiconductor manufacturing equipment
- Other metal materials
Due to lamp heating, RTP and RTCVD processing is possible! Quartz tube-type chamber.
- Annealing furnace
Turbo pump compatible! Low temperature (1100°C) / high temperature (1300°C) pyrometer.
- Annealing furnace
Supports a maximum substrate size of 156mm x 156mm! Compatible with vacuum or atmospheric transport systems and can be equipped with a load lock.
- Annealing furnace
Rapid cooling mechanism after annealing! Introducing the high-speed heat treatment equipment from Annealsys.
- Annealing furnace
We will introduce a case where "Eco Keeper" was applied to an annealing furnace that was experiencing severe heat release and environmental deterioration!
- Other safety and hygiene products
- others
- Annealing furnace
Kaneko Chemical Cleaning Agent Product Line
- Annealing furnace
A quartz tube type annealing device commonly used for alloying and reducing resistance of electrode films in compound semiconductors. It is a high-temperature processing type equipped with a rapid coo...
- Annealing furnace
- Heating device
Supports small-diameter wafers (4 inches) and niche processes for compound semiconductors. Compatible with both crystal processes and wafer processes (alloying and electrode annealing).
- Annealing furnace
- Electric furnace
- Other surface treatment equipment
A new model of Shinko Precision's vacuum soldering device has arrived, enhancing the quality of metal sintering joints with excellent thermal uniformity, temperature rise characteristics, and atmosphe...
- Annealing furnace
- Reflow Equipment
- Industrial Furnace
Use case; EV battery development (online measurement of generated hydrogen) hydrogen jet turbine, ships. FC evaluation equipment, insulating oil, forklifts, nuclear power.
- Other process controls
- Analytical Equipment and Devices
- Annealing furnace
Why introduce the insulation material "Silsaam"? Here are its benefits explained.
- CVD Equipment
- Industrial Furnace
- Annealing furnace
Annealing of various materials is possible with far infrared rays! It can accommodate complex shapes and different material compositions.
- Other machine elements
- Annealing furnace
To remove residual stress, heat it at a constant temperature for a certain period of time, and then gradually lower the temperature to room temperature!
- Other Auto Parts
- Annealing furnace
- Injection Molding Machine
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Introduction to anisotropic rare earth iron-based sintered magnets that achieve excellent magnetic properties while being free.
- Annealing furnace
Lathe machining / Aluminum processing / Precision parts machining
- CVD Equipment
- Sputtering Equipment
- Annealing furnace
Machining/Metalworking
- Sputtering Equipment
- Annealing furnace
- Resist Device
Celebrating 97 years of excellence, Made in Germany electric welding machines!! Loved by heavy users and with numerous achievements in Japan!!
- Welding Machine
- Annealing furnace
A Made in Germany electric welder boasting 97 years of establishment!! Loved by heavy users and has numerous achievements in Japan!!
- Welding Machine
- Annealing furnace
300mm wafer-compatible polyimide cure, baking, low-temperature annealing, compatible with multilayer substrates. Thermal processing equipment for mass production of advanced electronic devices.
- Annealing furnace
A bestselling type with a wealth of achievements, supporting high-temperature soldering, paste sintering, and metal particle sintering processes with reliable software and highly dependable hardware.
- Reflow Equipment
- Annealing furnace
- Electric furnace
Super insulation without gaps! Micro-porous insulation material shaped into a cylindrical form.
- Piping Materials
- Annealing furnace
- Heating device
Uniform heating and stable heating under high vacuum or atmospheric pressure; drying, degassing, baking, annealing; multipurpose mass-production vacuum oven.
- Annealing furnace
- Electric furnace
- Heating device
A compact heat treatment device characterized by rapid temperature rise and fall. It is an ideal compact vacuum heat treatment device for low-temperature heat treatment such as drying, degassing, and ...
- Heating device
- Soldering Equipment
- Annealing furnace
Standard device for voidless soldering. Proven and reliable hardware and software supporting automotive power device modules.
- Reflow Equipment
- Annealing furnace
Uniform heating in atmospheric pressure hydrogen atmosphere. Providing flexible hard support and sample testing with abundant experience and track record for thin films, wafers, compound, and ceramic ...
- Annealing furnace
- Oxidation/Diffusion Device
- Heating device
The heat source uses a SiC heater! A high-purity annealing furnace that achieves high clean performance.
- Annealing furnace
Wafer process-compatible full-scale production system for annealing, sintering, and polyimide curing, supporting high throughput with mini-batch and rapid cooling mechanism.
- Annealing furnace
A light curing device that can dry and bake only the surface area without damaging substrates with low heat resistance!
- Drying Equipment
- Other surface treatment equipment
- Annealing furnace
This is a tabletop electric furnace that can be used for research and experiments under vacuum or inert gas atmosphere. The sample stage is a lift-type with excellent operability, making sample exchan...
- Annealing furnace
A lineup tailored to your needs! Film deposition equipment and annealing equipment using lamp heating.
- Annealing furnace
- Other semiconductor manufacturing equipment