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Analytical Equipment Product List and Ranking from 261 Manufacturers, Suppliers and Companies | IPROS GMS

Last Updated: Aggregation Period:Jun 03, 2026~Jun 30, 2026
This ranking is based on the number of page views on our site.

Analytical Equipment Manufacturer, Suppliers and Company Rankings

Last Updated: Aggregation Period:Jun 03, 2026~Jun 30, 2026
This ranking is based on the number of page views on our site.

  1. FOSS JAPAN Co., Ltd. Tokyo//Testing, Analysis and Measurement
  2. 一般財団法人材料科学技術振興財団 MST Tokyo//Testing, Analysis and Measurement
  3. サーモフィッシャーサイエンティフィック株式会社/Thermo Fisher Scientific K.K. Tokyo//Testing, Analysis and Measurement
  4. 4 ビーエルテック Tokyo//Testing, Analysis and Measurement
  5. 5 アナリティクイエナジャパン Kanagawa//Testing, Analysis and Measurement

Analytical Equipment Product ranking

Last Updated: Aggregation Period:Jun 03, 2026~Jun 30, 2026
This ranking is based on the number of page views on our site.

  1. Sake FT-IR component analysis device "OenoFoss2" FOSS JAPAN Co., Ltd.
  2. iCAP PRO Series ICP Emission Spectrometer サーモフィッシャーサイエンティフィック株式会社/Thermo Fisher Scientific K.K.
  3. Alcohol analysis device for sake Alcolyzer3001 SAKE
  4. 4 Laser Ablation ICP-MS System サーモフィッシャーサイエンティフィック株式会社/Thermo Fisher Scientific K.K.
  5. 5 Total Organic Carbon Automatic Analyzer "TOC-200 Series" 東レエンジニアリングDソリューションズ

Analytical Equipment Product List

691~720 item / All 1145 items

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Desktop Space-Saving Automatic Dispensing Device 'EDR-384SX-6'

Supports 0.1μL dispensing! Even when connecting dedicated plate stackers on both sides, it takes up minimal space.

The "EDR-384SX-6" is a 6-stage workstation that has been introduced as a compact version of the popular 12-stage workstation "EDR-384SX." The dispensing unit can be easily replaced with a one-touch mechanism. It does not take up much space even when connecting dedicated plate stackers on both sides. Additionally, it is equipped with the control software "ICS," which has been thoroughly designed for ease of use with a simple start. 【Features】 ■ Compatible with 96/384/1536 well plates ■ Supports double-range heads ■ Compact version ■ Can accommodate up to 6 micro well plates and tip racks ■ Easily changeable channel numbers and dispensing ranges *For more details, please refer to the PDF document or feel free to contact us.

  • Other physicochemical equipment
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Automatic Dispensing Device - Compact 8-channel Variable Pitch Type 'EDR-8LZ'

Achieves space-saving with a compact design, and can also be installed in safety cabinets! It is a dual-function model that combines high-precision micro dispensing and large-volume dispensing!

The "EDR-8LZ" features 8 stages, allowing for a variety of stage layouts. It is compatible with a wide range of containers, from centrifuge tubes to 384-well plates. It can be used with any number of channels from 1ch to 8ch, enabling continuous operations such as dispensing rare reagents with 1ch and samples with 8ch. The newly adopted "double range mechanism" in the head section eliminates the need for head replacement. By using different syringes according to the volume, it allows for high-precision dispensing from small to large volumes. Being produced domestically ensures a stable supply of consumables. 【Features】 ■ Compact design ■ Abundant stages ■ Compatible with various containers ■ No need for head replacement & realization of high-precision micro-dispensing ■ Drip prevention shutter ■ Equipped with liquid level detection functions using various sensors *For more details, please refer to the PDF document or feel free to contact us.

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Automated Dispensing Device Workstation Type 'EDR-384GX'

Are you ready to break free from the tedious purification of antibodies and proteins and create new value?

We would like to introduce the 'EDR-384GX' that we handle. For high-throughput screening with a small number of samples, the combination of PhyTip and a 96-channel liquid handler is suitable. Purification can also be done with your preferred number of samples. Additionally, we offer the compact 8-channel type 'EDR-8LZ', which is suitable for automation of multiple samples. 【Features】 <EDR-384GX> ■ Automation of each process that requires processing time, such as low-speed pipetting ■ Achieves high throughput by improving chip exchange speed and increasing dispensing head speed ■ The device has a large opening, making it suitable for automation integration *For more details, please refer to the PDF document or feel free to contact us.

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SIMS (Secondary Ion Mass Spectrometry)

This is a method for qualitative and quantitative analysis of components contained in a sample by detecting secondary ions and measuring the detection amount at each mass.

When ions are incident on the sample surface, various particles such as electrons, neutral particles, and ions are emitted from the sample surface. SIMS is a technique that detects these ions and measures the detection quantity at each mass to perform qualitative and quantitative analysis of the components contained in the sample. - High sensitivity (ppb to ppm) - Analysis of all elements from H to U is possible - Wide detection concentration range (from major component elements to trace impurities) - Quantitative analysis using standard samples is possible - Depth direction analysis is possible - Evaluation with depth direction resolution of a few to several tens of nm is possible - Measurement of micro-regions up to a few micrometers in size is possible - Isotope analysis is possible - Destructive analysis

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[TOF-SIMS] Time-of-Flight Secondary Ion Mass Spectrometry

This is a method for structural analysis of the sample surface. Due to its sensitivity to the surface compared to other analytical devices, it is suitable for identifying organic contaminants on the very surface.

This is a method for structural analysis of sample surfaces. It is suitable for identifying organic contamination on the very surface due to its sensitivity compared to other analytical devices. Using a sputter ion source, it is possible to analyze the distribution of inorganic and organic materials in the depth direction. - Structural analysis and identification of organic and inorganic compounds are possible. - Coordination data from foreign substance inspection devices can be linked. - Qualitative analysis is possible from micron-order microforeign substances to several centimeters. - It is possible to analyze the very surface with high sensitivity. - Image analysis is possible. - Qualitative analysis of depth direction analysis is possible.

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Inductively Coupled Plasma Mass Spectrometry (ICP-MS)

This is a method for inorganic element analysis using inductively coupled plasma (ICP) as the excitation source.

ICP-MS allows for relatively easy preparation of standard samples that are difficult to produce for solid analysis, as it analyzes solutions. Therefore, it is frequently used for accurately quantifying trace inorganic elements in solutions. - It can detect the lowest concentrations (ppt or sub-ppt levels) due to its high sensitivity and low background, making it the most effective instrument for inorganic element analysis. (*: ppt: 10^-12 g/g) - It allows for flexible preparation of standard samples (standard solutions) that serve as a reference for quantitative analysis, resulting in lower uncertainty in the results. - It enables qualitative analysis by measuring many elements of the periodic table simultaneously. Additionally, it has a wide dynamic range, allowing for simultaneous analysis of major and trace components.

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[Analysis Case] LC/MS Analysis of Ergothioneine

Evaluation of the yield and purification level of amino acids derived from natural sources.

Ergothioneine, an amino acid homologue found abundantly in edible mushrooms of the Pleurotaceae family, is gaining attention in the fields of food, medicine, and beauty as a natural substance with high antioxidant properties. Recently, chemical synthesis techniques have also been established, but there is still a need for the development of high-efficiency separation and purification techniques from natural food resources, and it is required to accurately measure the yield and evaluate the level of purification.

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[Analysis Case] Investigation of the Causes of Surface Stains and Water Repellency on Parts Using TOF-SIMS

Properly sampling and measuring surface contamination even on large parts that cannot be cut.

It was found that there are water-repellent stains on the surface of the aluminum material. The stained area was adhered to tape (transferred), and analysis was conducted using TOFSIMS. Fragments identical to those from the stained area on the aluminum surface were detected from the "tape surface where the stained area was transferred," suggesting that the substance causing the stain has been transferred to the tape. This method of transferring and collecting the causative substance onto tape is effective for parts that cannot be cut.

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[Analysis Case] Identification of Fluorine-based Lubricants and Polymers using TOF-SIMS

Identify the contaminating components and estimate the contamination occurrence process.

There are various types of fluorine-based compounds. During the investigation of contamination sources, performing qualitative analysis of the types of fluorine compounds allows us to examine the processes that caused the contamination. Therefore, we conducted an analysis using surface-sensitive TOF-SIMS to determine what is adhering to areas with good water repellency. By utilizing the fact that the fragment patterns of the fluorine-based oils used in each process differ by type, we performed a fingerprint matching and found that a substance corresponding to the oil from process B was adhering.

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[Analysis Case] Evaluation of Adhesive Tape Residue

We will identify the surface adsorbate components using TOF-SIMS.

Residue from adhesive tape can cause poor adhesion and peeling during the manufacturing process. When residue is suspected to be the cause of defects, TOF-SIMS, which can analyze the composition and distribution of surface contaminants, is effective. We will present a case where the surface of a silicon wafer was adhered with adhesive tape and measured with TOF-SIMS after peeling it off.

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[Analysis Case] Depth Direction Analysis of TFT Wiring Intersection Using SSDP-SIMS

Analysis using SSDP is also possible for microdomains and glass substrates.

An example is shown where secondary ion mass spectrometry (SIMS) was used to analyze the intersection (4μm×10μm) of the data signal wiring and gate electrode wiring of a commercially available TFT LCD from the substrate side (SSDP-SIMS). By measuring from the substrate side (SSDP-SIMS), it becomes possible to provide data free from the influence of high-concentration layers or metal films on the surface side.

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[Analysis Case] Component Analysis of Hair Roots

Visualization of biological components such as cholesterol and fatty acids using TOF-SIMS.

The hair roots of human hair (both shed hair and pulled hair) were pressed against a Si wafer, and imaging measurements (surface analysis) were conducted on the transferred components. Shed hair shows a strong tendency for ■K and ●phospholipids to be present only at the tip of the hair root. Additionally, it is believed that the entire hair root contains ■CnHmCOOH (n=17–31) fatty acids (derived from human sebum), ●amide components derived from keratin plugs, ◆nitrogen-containing organic acids with a mass of 500–700, and ◆organic substances with a mass around 800 that are aggregated. However, the organic substances containing two COOH groups derived from human sebum, which are observed in pulled hair, show a weak tendency.

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[Analysis Case] Observation of Pigment and Dye Dispersion

Micron-order imaging measurement using TOF-SIMS.

We investigated the distribution of the blue pigment "Cu phthalocyanine" dispersed on the polyethylene surface. TOF-SIMS analysis allows us to capture the distribution of organic materials with a pigment size of 1μm.

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[Analysis Case] High-Sensitivity Analysis of Light Elements in Semiconductor Substrates Using SIMS

SIMS analysis allows for the evaluation of elements such as H, C, N, O, and F down to levels below 1 ppm.

It is possible to detect H, C, N, and O in semiconductor substrates at concentrations below 1 ppm (approximately 5E16 atoms/cm3) and F at concentrations below 1 ppb (approximately 5E13 atoms/cm3) using this method. Examples of measurements in actual FZ-Si (Figure 1) and the background levels of III-V semiconductors are presented (Table 2). In addition to III-V semiconductors, standard samples have been prepared for various materials such as metal films and insulating films, enabling highly sensitive quantitative analysis. This method is ideal for bulk analysis of various materials, including semiconductor substrates, and for evaluating the contamination of gas components during semiconductor processes.

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[Analysis Case] Discrimination between Anatase and Rutile Types of Titanium Dioxide

TEM-EELS enables elemental identification and chemical state analysis in micro-regions.

Titanium dioxide (TiO2), used in electronic materials, catalytic materials, ultraviolet absorbers, and photocatalysts, exists in two forms with the same composition but different crystal structures: anatase and rutile. We conducted measurements on a polycrystalline TiO2 sample with a thickness of 20 nm, deposited on a Si substrate (Photo 1), using an electron beam probe focused down to approximately 1 nmΦ (FWHM). The EELS spectra obtained from the sample match the standard spectra of anatase TiO2 for both Ti and O (Figures 1 and 2).

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[Analysis Case] Contamination Assessment of Si Wafer Bevel Area

It is possible to evaluate both metal components and organic components simultaneously.

In semiconductor device manufacturing, from the perspective of improving yield, it is necessary to enhance the cleanliness of the backside of the wafer and to remove substances that remain on the bevel area of the wafer. In this study, we conducted TOF-SIMS analysis of the bevel inclined surface to evaluate the distribution of contamination (Figure 2). Additionally, by comparing the mass spectra of the adhered substances with those of the normal area and the contamination source, we found that the adhered substances matched the metal (Cr) and organic components of the contamination source. TOF-SIMS can capture the contamination generation process in the bevel area (edge and inclined surface).

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[Analysis Case] Component Analysis of Organic EL Devices

TOF-SIMS component analysis of slope-polished organic multilayer structure samples.

We conducted TOF-SIMS analysis on an organic EL device (Figure 1) estimated to be formed from four layers of different organic compounds (or organometallic complexes) using XPS. For multilayer structural samples, depth profiling analysis using sputtering is also performed; however, in this case, we created a slope surface to expose each layer without breaking the bonds of the constituent components. Molecular weight-related ions and fragment ions presumed to be Alq3, NPD, and CuPc were obtained, confirming that TOF-SIMS analysis of the slope surface is an effective method for component analysis of organic multilayer films.

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[Analysis Case] Evaluation of Ultra-Shallow Implant Profiles by SIMS

Evaluation of dopant distribution and junctions is possible even in extremely shallow regions.

The miniaturization of devices has increased the need for evaluating the depth distribution of impurities in extremely shallow regions. To conduct an accurate assessment, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. Figure 1 shows examples of measurements of Si wafers implanted with BF2+ 1 keV, P+ 1 keV, and As+ 1 keV, using a primary ion beam energy of 250 eV to 300 eV.

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[Analysis Case] High-Precision Analysis of Ultra-Shallow Dopant Distribution Using SIMS

Can be evaluated with high reproducibility.

Due to the miniaturization of devices, it is necessary to evaluate the depth distribution of impurities in extremely shallow regions. To perform an accurate evaluation, SIMS analysis using a primary ion beam with lower energy (below 1 keV) is required. In this study, the relative standard deviation of the surface density of B calculated from six measurements conducted over multiple days using a 1 keV oxygen ion beam on Si wafers implanted with B+ at low energy was found to be less than 3%, demonstrating that high reproducibility can be achieved in the evaluation of extremely shallow impurity distributions, similar to conventional SIMS analysis.

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[Analysis Case] Evaluation of the Depth Direction State of Stainless Steel Passive Film

Waveform analysis and evaluation of the depth distribution of bonding states by Ar sputtering.

XPS allows for the evaluation of bonding states of oxidized components (components bonded with oxygen) and metallic components (components bonded with metals). Additionally, by using argon ion sputtering, it is also possible to evaluate bonding states in the depth direction. * Regarding the passive film on the surface of stainless steel (with a thickness of several tens of nm to several hundred nm), the results of the above measurements showed that (1) there are many Fe oxidized components on the surface side, (2) Cr oxidized components exist below the Fe oxide layer, and (3) Ni oxidized components are almost nonexistent. * Since it includes changes in bonding states due to sputtering, the evaluation is primarily based on relative comparisons.

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[TDS] Thermal Desorption Gas Analysis Method

A mass spectrometry method that allows monitoring of gases generated by vacuum heating/warming at different temperatures, with high sensitivity for detecting hydrogen and water.

TDS is a mass spectrometry method that allows monitoring of gases generated by vacuum heating/ramping at different temperatures. The TDS spectrum represents temperature on the horizontal axis and ion intensity on the vertical axis. This enables comparison of the amount of gas released and the desorption temperatures. Additionally, due to the vacuum environment, hydrogen and water can be analyzed with high sensitivity. - It is possible to understand the relationship between the gases desorbed from the sample, the pressure, and the temperature at which they are generated. - Since only the sample can be heated, the background is low, allowing for high-sensitivity analysis of low-mass molecules such as hydrogen, water, oxygen, and nitrogen. - It is possible to estimate the composition of the gases generated from the sample and perform quantitative analysis (counting the number of molecules).

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X-ray Absorption Fine Structure (XAFS)

XAFS is a method for analyzing the absorption spectrum obtained by irradiating a substance with X-rays.

- It is possible to evaluate the local structure (interatomic distances, coordination numbers) and chemical state (valence, coordination structure) around the target elements in the sample. - Measurements can be conducted regardless of the environment (high temperature, high pressure, atmosphere). - Measurements can be performed on various sample forms (solid, liquid, gas, thin films, amorphous materials, etc.). - A wide applicable concentration range (from major component elements to trace elements). - Non-destructive measurement. - Depending on the measurement method, it is possible to conduct measurements that are sensitive to the surface as well as bulk measurements.

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[XRF] X-ray fluorescence analysis method

This is a method for conducting elemental analysis and compositional analysis by detecting fluorescent X-rays generated by irradiating with X-rays and spectrally analyzing them using energy or a spectroscopic crystal.

X-ray fluorescence analysis (XRF) is a method that detects fluorescent X-rays generated by irradiated X-rays and performs elemental and compositional analysis by spectrally analyzing the energy and using a spectroscopic crystal. - The entire energy measurement range (from Na to U) can be measured simultaneously in a short time. - Suitable for the analysis of unknown samples. - Non-destructive analysis. - No pre-treatment is required except for special samples, allowing for easy analysis in the atmosphere. - Elemental analysis of large samples that cannot be moved is possible with a handheld device.

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[Analysis Case] Investigation of Causes of Peeling in Plating and Coating

Identification of contamination sources on the cleavage surface using TOF-SIMS.

When delamination occurs, it is important to identify the components that have worsened the adhesion at the interface. By using a peeling process to physically delaminate at the interface of interest and measuring the components present on that surface with TOF-SIMS, it is possible to investigate the cause of delamination. TOF-SIMS detects secondary ions that are ionized while maintaining the structure of organic materials, allowing us to obtain information about the origin of the components present at the delamination surface, making it effective for investigating the causes of delamination and the process. Measurement methods: TOF-SIMS, peeling, disassembly Product fields: LSI, memory, manufacturing equipment, components Analysis purposes: Evaluation of chemical bonding states, failure analysis, defect analysis For more details, please download the materials or contact us.

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[Analysis Case] Component Identification of Foreign Substances Considering Thermal History

Proposal for the use of standard samples with aligned thermal history.

Polymeric materials such as polypropylene (PP) react with oxygen and moisture in the atmosphere when heated, causing changes in their molecular structure. Therefore, when foreign substances or contaminants may be present in polymeric materials, it is necessary to use standard materials processed in the same environment as the measurement sample for comparison data. To investigate how the PP standard material changes due to heat treatment (200°C for 30 minutes), FT-IR and TOF-SIMS measurements were conducted.

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[Analysis Case] Heating Degradation Test of Lithium-Ion Secondary Batteries

Samples after thermal degradation can be evaluated using LC/MS/MS, TOF-SIMS, TEM+EDX, etc.

The development of lithium-ion secondary batteries faces challenges such as improving performance, extending lifespan, and enhancing reliability. To address these challenges, it is important to understand the degradation mechanisms of the batteries. In this study, we conducted a heating degradation test to evaluate the degradation mechanisms caused by temperature. After the heating degradation test, we assessed samples that showed significant capacity reduction using LC/MS/MS for the electrolyte, TOF-SIMS for the anode surface, and FIB-TEM+EDX for the cross-section of the anode.

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[Analysis Case] Qualitative Analysis of Organic EL Layer

Suppression of component alteration through measurement surface finishing under atmosphere control.

We conducted qualitative analysis of the components by measuring the surface under controlled conditions, minimizing alterations due to processing, on a commercially available digital audio player equipped with an organic EL display.

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[Analysis Case] Distribution Evaluation of Chitosan by TOF-SIMS

Visualization of pharmaceutical components using TOF-SIMS.

Chitosan is used in a wide range of fields such as medicine, food, cosmetics, and clothing due to its antibacterial and moisturizing properties. Some cotton swabs, which are everyday items, contain chitosan to provide antibacterial effects. Therefore, we evaluated the chitosan contained in cotton swabs using TOF-SIMS, which allows for visualization through mapping and component assessment through spectral measurement.

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[Analysis Case] Investigation of the Causes of Wettability Changes Due to Plasma Treatment

Evaluation of the top surface of modified layers of polymers, resins, and films using TOF-SIMS is possible.

On the surface of cell culture dishes, treatments are performed to convert hydrophobic plastic surfaces to hydrophilic ones in order to enhance cell adhesion. In this study, the surfaces of dishes that underwent hydrophilic treatment were evaluated using XPS and TOF-SIMS, revealing an increase in OH and CHO groups. By conducting quantitative evaluations with XPS and qualitative evaluations with TOF-SIMS, it is possible to capture how the surface has changed.

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[Analysis Case] Evaluation of Film-Forming Component Encroachment on the Back Surface of the Wafer

Quantitative evaluation of metal components is possible near the bevel area.

In semiconductor device manufacturing, it is necessary to remove metals remaining on the backside of the wafer from the perspective of improving yield, and it is important to quantitatively understand the amount of metal components remaining. To investigate the concentration distribution of metals remaining on the backside within a range of 500 µm from the bevel area, we conducted evaluations using TOF-SIMS. TOF-SIMS has the spatial resolution to detect metal components only near the bevel area, and by using standard samples with known concentrations, it is possible to quantitatively calculate the concentrations.

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